GB9907727D0 - Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer - Google Patents

Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer

Info

Publication number
GB9907727D0
GB9907727D0 GBGB9907727.3A GB9907727A GB9907727D0 GB 9907727 D0 GB9907727 D0 GB 9907727D0 GB 9907727 A GB9907727 A GB 9907727A GB 9907727 D0 GB9907727 D0 GB 9907727D0
Authority
GB
United Kingdom
Prior art keywords
magnetic
thin film
barrier layer
film sensor
tunnel effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9907727.3A
Other versions
GB2333900A (en
GB2333900B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB9907727D0 publication Critical patent/GB9907727D0/en
Publication of GB2333900A publication Critical patent/GB2333900A/en
Application granted granted Critical
Publication of GB2333900B publication Critical patent/GB2333900B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
GB9907727A 1996-10-02 1997-09-29 Magnetic-field sensitive thin film sensor having a tunnel effect barrier layer Expired - Fee Related GB2333900B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19640632 1996-10-02
PCT/DE1997/002236 WO1998014793A1 (en) 1996-10-02 1997-09-29 Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer

Publications (3)

Publication Number Publication Date
GB9907727D0 true GB9907727D0 (en) 1999-05-26
GB2333900A GB2333900A (en) 1999-08-04
GB2333900B GB2333900B (en) 2001-07-11

Family

ID=7807665

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9907727A Expired - Fee Related GB2333900B (en) 1996-10-02 1997-09-29 Magnetic-field sensitive thin film sensor having a tunnel effect barrier layer

Country Status (4)

Country Link
JP (1) JP2001501309A (en)
DE (1) DE19781061D2 (en)
GB (1) GB2333900B (en)
WO (1) WO1998014793A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971424A3 (en) * 1998-07-10 2004-08-25 Interuniversitair Microelektronica Centrum Vzw Spin-valve structure and method for making spin-valve structures
EP0971423A1 (en) 1998-07-10 2000-01-12 Interuniversitair Micro-Elektronica Centrum Vzw Spin-valve structure and method for making same
DE10017374B4 (en) * 1999-05-25 2007-05-10 Siemens Ag Magnetic coupling device and its use
JP2001196661A (en) 1999-10-27 2001-07-19 Sony Corp Magnetization control method, information storage method, magnetic function element, and information storage element
DE10009944A1 (en) 2000-03-02 2001-09-13 Forschungszentrum Juelich Gmbh Arrangement for measuring magnetic field comprises first layer and second layer having electrically conducting antiferromagnetic layer bordering soft magnetic layer
JPWO2002050924A1 (en) 2000-12-21 2004-04-22 富士通株式会社 Magnetoresistive element, magnetic head, and magnetic reproducing apparatus using the same
JP2002305335A (en) * 2001-04-06 2002-10-18 Toshiba Corp Spin valve transistor
DE10128964B4 (en) * 2001-06-15 2012-02-09 Qimonda Ag Digital magnetic memory cell device
DE10217598C1 (en) * 2002-04-19 2003-10-16 Siemens Ag Circuit device with magnetoresistive circuit elements providing output signals of opposite sign in response to external magnetic field
DE10217593C1 (en) * 2002-04-19 2003-10-16 Siemens Ag Circuit device with magnetoresistive circuit elements providing output signals of opposite sign in response to external magnetic field
DE10222395B4 (en) * 2002-05-21 2010-08-05 Siemens Ag Circuit device with a plurality of TMR sensor elements
DE10309244A1 (en) * 2003-03-03 2004-09-23 Siemens Ag Thin film magnetic memory element has a tunnel barrier layer that is at least partially comprised of Yttrium oxide, arranged between ferromagnetic layers
US11500042B2 (en) 2020-02-28 2022-11-15 Brown University Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253696B2 (en) * 1992-09-11 2002-02-04 株式会社東芝 Magnetoresistance effect element
DE4243358A1 (en) * 1992-12-21 1994-06-23 Siemens Ag Magnetic resistance sensor with artificial antiferromagnet and method for its production
WO1996007208A1 (en) * 1994-08-31 1996-03-07 Douwe Johannes Monsma Current conducting structure with at least one potential barrier and method of manufcturing such

Also Published As

Publication number Publication date
GB2333900A (en) 1999-08-04
DE19781061D2 (en) 1999-07-01
GB2333900B (en) 2001-07-11
JP2001501309A (en) 2001-01-30
WO1998014793A1 (en) 1998-04-09

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Legal Events

Date Code Title Description
789A Request for publication of translation (sect. 89(a)/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20011011