GB9816999D0 - An electrode-to-semiconductor contact and a method of manufacture therefor - Google Patents
An electrode-to-semiconductor contact and a method of manufacture thereforInfo
- Publication number
- GB9816999D0 GB9816999D0 GBGB9816999.8A GB9816999A GB9816999D0 GB 9816999 D0 GB9816999 D0 GB 9816999D0 GB 9816999 A GB9816999 A GB 9816999A GB 9816999 D0 GB9816999 D0 GB 9816999D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- semiconductor contact
- manufacture therefor
- therefor
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9816999.8A GB9816999D0 (en) | 1998-08-06 | 1998-08-06 | An electrode-to-semiconductor contact and a method of manufacture therefor |
JP22037799A JP2000068528A (en) | 1998-08-06 | 1999-08-03 | Contact between electrode and semiconductor, and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9816999.8A GB9816999D0 (en) | 1998-08-06 | 1998-08-06 | An electrode-to-semiconductor contact and a method of manufacture therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9816999D0 true GB9816999D0 (en) | 1998-09-30 |
Family
ID=10836716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB9816999.8A Ceased GB9816999D0 (en) | 1998-08-06 | 1998-08-06 | An electrode-to-semiconductor contact and a method of manufacture therefor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2000068528A (en) |
GB (1) | GB9816999D0 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002094110A (en) * | 2000-09-12 | 2002-03-29 | ▲さん▼圓光電股▲ふん▼有限公司 | Structure of light emitting diode |
US6605832B2 (en) * | 2001-07-31 | 2003-08-12 | Xerox Corporation | Semiconductor structures having reduced contact resistance |
JP2003051644A (en) * | 2001-08-02 | 2003-02-21 | Furukawa Electric Co Ltd:The | Semiconductor device, semiconductor light-receiving device, semiconductor light-emitting device, semiconductor laser and surface-emitting semiconductor laser |
US7033949B2 (en) * | 2003-12-29 | 2006-04-25 | Formosa Epitaxy Incorporation | Structure and manufacturing method for nitride-based light-emitting diodes |
JP6245319B1 (en) * | 2016-06-30 | 2017-12-13 | 富士ゼロックス株式会社 | Light emitting component, print head, image forming apparatus, and semiconductor multilayer substrate |
-
1998
- 1998-08-06 GB GBGB9816999.8A patent/GB9816999D0/en not_active Ceased
-
1999
- 1999-08-03 JP JP22037799A patent/JP2000068528A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2000068528A (en) | 2000-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |