GB975960A - Improvements in or relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in or relating to methods of manufacturing semiconductor devices

Info

Publication number
GB975960A
GB975960A GB34450/61A GB3445061A GB975960A GB 975960 A GB975960 A GB 975960A GB 34450/61 A GB34450/61 A GB 34450/61A GB 3445061 A GB3445061 A GB 3445061A GB 975960 A GB975960 A GB 975960A
Authority
GB
United Kingdom
Prior art keywords
layer
type
semi
heating
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34450/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB975960A publication Critical patent/GB975960A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/00—
    • H10P14/46—
    • H10P32/00—
    • H10P52/00—
    • H10P95/00—

Landscapes

  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
GB34450/61A 1960-09-29 1961-09-26 Improvements in or relating to methods of manufacturing semiconductor devices Expired GB975960A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL256387 1960-09-29

Publications (1)

Publication Number Publication Date
GB975960A true GB975960A (en) 1964-11-25

Family

ID=19752598

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34450/61A Expired GB975960A (en) 1960-09-29 1961-09-26 Improvements in or relating to methods of manufacturing semiconductor devices

Country Status (5)

Country Link
CH (1) CH396219A (cg-RX-API-DMAC10.html)
DE (1) DE1275208B (cg-RX-API-DMAC10.html)
ES (2) ES270774A1 (cg-RX-API-DMAC10.html)
GB (1) GB975960A (cg-RX-API-DMAC10.html)
NL (1) NL256387A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783225A (en) * 1982-07-30 1988-11-08 Hitachi, Ltd. Wafer and method of working the same
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
EP1283551A3 (en) * 2001-08-08 2004-07-28 Shin-Etsu Chemical Co., Ltd. Angular substrates

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930107A (en) * 1953-07-16 1960-03-29 Sylvania Electric Prod Semiconductor mount and method
DE1018558B (de) * 1954-07-15 1957-10-31 Siemens Ag Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter
US2840770A (en) * 1955-03-14 1958-06-24 Texas Instruments Inc Semiconductor device and method of manufacture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783225A (en) * 1982-07-30 1988-11-08 Hitachi, Ltd. Wafer and method of working the same
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
USRE40139E1 (en) * 1982-07-30 2008-03-04 Renesas Technology Corp. Wafer having chamfered bend portions in the joint regions between the contour of the cut-away portion of the wafer
EP1283551A3 (en) * 2001-08-08 2004-07-28 Shin-Etsu Chemical Co., Ltd. Angular substrates
US7122280B2 (en) 2001-08-08 2006-10-17 Shin-Etsu Chemical Co., Ltd. Angular substrates

Also Published As

Publication number Publication date
CH396219A (de) 1965-07-31
ES270774A1 (es) 1962-03-01
DE1275208B (de) 1968-08-14
ES273899A1 (es) 1962-04-16
NL256387A (cg-RX-API-DMAC10.html)

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