GB973066A - A transistor amplifier - Google Patents

A transistor amplifier

Info

Publication number
GB973066A
GB973066A GB1322163A GB1322163A GB973066A GB 973066 A GB973066 A GB 973066A GB 1322163 A GB1322163 A GB 1322163A GB 1322163 A GB1322163 A GB 1322163A GB 973066 A GB973066 A GB 973066A
Authority
GB
United Kingdom
Prior art keywords
transistor
collector
emitter
base
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1322163A
Inventor
Richard Alfred Skinner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leeds and Northrup Co
Original Assignee
Leeds and Northrup Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leeds and Northrup Co filed Critical Leeds and Northrup Co
Priority to GB1322163A priority Critical patent/GB973066A/en
Priority to DEL44611A priority patent/DE1193998B/en
Publication of GB973066A publication Critical patent/GB973066A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means

Abstract

973,066. Transistors amplifying; switching circuits. LEEDS & NORTHRUP CO. April 3, 1963, No. 13221/63. Heading H3T. The collector load resistance of a common emitter input transistor is connected in a loop circuit including the emitter-collector path of a further transistor, and sources of collector potential and forward base-biasing potentials for the further transistor, a ground connection being made to the base-biasing potential such that the potential between ground and the base of the further transistor is effective through the conductive base-emitter junction of the further transistor to maintain the collector of the input transistor at a high potential and to maintain a low impedance between the collector and ground. The collector of input transistor 10 is connected as shown through common base transistor 11 to output terminal 13, transistor 11 being biased by sources 19, 21 to be conducting for all values of collector current of transistor 10 and maintained in a non-saturated condition by supply 24 and resistor 25. Since the emitter-base junction of transistor 11 is forward biased and hence has a low impedance, the collector of transitor 10 is kept at the constant negative potential of source 21. The effective capacitance between the collector and base of transistor 10 and hence the internal high-frequency feedback of this transistor is minimised due to the high constant potential difference between the collector and base. The feedback is further minimised by providing a low impedance path to ground for high frequencies since the point 31 is connected to ground through the low impedance path of transistor 11 and source 21. The emitter current of transistor 10 is limited to a maximum valve determined by the current from a constant current source 14, 15 which maximum valve is insufficient to saturate the transistor. If the input signal from 12b is such as to produce conductivity of transistor 10 below the maximum value the difference between the emitter current and the current from the constant current source flows through diode 16 and the amplifier acts as a common-emitter stage with high gain. As the input signal becomes more negative the emitter current increases until it has reached the value of the current from the source 14, 15 when diode 16 is reverse biased and the amplifier operates in a manner similar to an emitter follower. Limiting of the input signals is also achieved by including diode 30 in the circuit. Transistor 11 may be of PNP conductivity type or both transistors may be of NPN conductivity types.
GB1322163A 1963-04-03 1963-04-03 A transistor amplifier Expired GB973066A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1322163A GB973066A (en) 1963-04-03 1963-04-03 A transistor amplifier
DEL44611A DE1193998B (en) 1963-04-03 1963-04-11 Transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1322163A GB973066A (en) 1963-04-03 1963-04-03 A transistor amplifier

Publications (1)

Publication Number Publication Date
GB973066A true GB973066A (en) 1964-10-21

Family

ID=10019027

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1322163A Expired GB973066A (en) 1963-04-03 1963-04-03 A transistor amplifier

Country Status (1)

Country Link
GB (1) GB973066A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121634A (en) * 1982-06-07 1983-12-21 Western Electric Co Improvements in or relating to amplifier circuits
EP0282350A2 (en) * 1987-03-13 1988-09-14 Kabushiki Kaisha Toshiba High frequency power amplifier having heterojunction bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121634A (en) * 1982-06-07 1983-12-21 Western Electric Co Improvements in or relating to amplifier circuits
EP0282350A2 (en) * 1987-03-13 1988-09-14 Kabushiki Kaisha Toshiba High frequency power amplifier having heterojunction bipolar transistor
EP0282350A3 (en) * 1987-03-13 1989-05-31 Kabushiki Kaisha Toshiba High frequency power amplifier having heterojunction bipolar transistor

Similar Documents

Publication Publication Date Title
US2847519A (en) Stabilized transistor signal amplifier circuit
GB1349310A (en) Current amplifier
GB1101875A (en) Amplifier
GB1265157A (en)
US3701032A (en) Electronic signal amplifier
US4121169A (en) Amplifier device
GB770200A (en) Temperature controlled semi-conductor bias circuit
GB1283964A (en) Transistor biasing arrangement
GB739829A (en) Improvements in or relating to semi-conductor amplifiers
US3192405A (en) Diode bias circuit
US2852625A (en) High input impedance transistor amplifier
GB1075436A (en) Transistor amplifier
US3200343A (en) D.c. amplifier having fast recovery characteristics
GB1366271A (en) Signal control circuit
GB1446068A (en) Stabilization of quiescent collector potential of current-mode biased transistors-
GB736760A (en) Multi-stage semi-conductor signal translating circuits
GB1152347A (en) Cascode Transistor Amplifier
GB1207242A (en) Temperature compensated amplifier
GB1170524A (en) Transistor Bias and Temperature Compensation Circuit
GB752574A (en) Amplifier circuit for cascade-coupled transistor amplifiers
GB973066A (en) A transistor amplifier
US3199041A (en) D.c. transistor amplifier including a zener diode
GB1215582A (en) Improvements in or relating to transistor amplifiers
GB1215324A (en) A transistor a.c. amplifier circuit
GB1318709A (en) Current amplifier circuits