GB972820A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB972820A GB972820A GB7010/62A GB701062A GB972820A GB 972820 A GB972820 A GB 972820A GB 7010/62 A GB7010/62 A GB 7010/62A GB 701062 A GB701062 A GB 701062A GB 972820 A GB972820 A GB 972820A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- lead
- diode
- impurity layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 239000008188 pellet Substances 0.000 abstract 3
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- MOFMLVFVLDPJME-UHFFFAOYSA-N cobalt gold iron nickel Chemical compound [Ni][Fe][Co][Au] MOFMLVFVLDPJME-UHFFFAOYSA-N 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000700 radioactive tracer Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96422A US3208924A (en) | 1961-03-17 | 1961-03-17 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB972820A true GB972820A (en) | 1964-10-14 |
Family
ID=22257277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7010/62A Expired GB972820A (en) | 1961-03-17 | 1962-02-22 | Semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3208924A (enrdf_load_stackoverflow) |
| BE (1) | BE615177A (enrdf_load_stackoverflow) |
| GB (1) | GB972820A (enrdf_load_stackoverflow) |
| NL (1) | NL276059A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280849A (enrdf_load_stackoverflow) * | 1961-07-12 | 1900-01-01 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2783197A (en) * | 1952-01-25 | 1957-02-26 | Gen Electric | Method of making broad area semiconductor devices |
| US2757323A (en) * | 1952-02-07 | 1956-07-31 | Gen Electric | Full wave asymmetrical semi-conductor devices |
| US2802159A (en) * | 1953-10-20 | 1957-08-06 | Hughes Aircraft Co | Junction-type semiconductor devices |
| US2979444A (en) * | 1957-07-16 | 1961-04-11 | Philco Corp | Electrochemical method and apparatus therefor |
| US2975342A (en) * | 1957-08-16 | 1961-03-14 | Research Corp | Narrow base planar junction punch-thru diode |
| FR1228285A (fr) * | 1959-03-11 | 1960-08-29 | Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes | |
| US3088888A (en) * | 1959-03-31 | 1963-05-07 | Ibm | Methods of etching a semiconductor device |
| US3110849A (en) * | 1960-10-03 | 1963-11-12 | Gen Electric | Tunnel diode device |
-
0
- NL NL276059D patent/NL276059A/xx unknown
- BE BE615177D patent/BE615177A/xx unknown
-
1961
- 1961-03-17 US US96422A patent/US3208924A/en not_active Expired - Lifetime
-
1962
- 1962-02-22 GB GB7010/62A patent/GB972820A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE615177A (enrdf_load_stackoverflow) | |
| NL276059A (enrdf_load_stackoverflow) | |
| US3208924A (en) | 1965-09-28 |
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