GB9702547D0 - Optical devices - Google Patents

Optical devices

Info

Publication number
GB9702547D0
GB9702547D0 GBGB9702547.2A GB9702547A GB9702547D0 GB 9702547 D0 GB9702547 D0 GB 9702547D0 GB 9702547 A GB9702547 A GB 9702547A GB 9702547 D0 GB9702547 D0 GB 9702547D0
Authority
GB
United Kingdom
Prior art keywords
optical devices
optical
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9702547.2A
Other versions
GB2322002A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
Original Assignee
University of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield filed Critical University of Sheffield
Priority to GB9702547A priority Critical patent/GB2322002A/en
Publication of GB9702547D0 publication Critical patent/GB9702547D0/en
Publication of GB2322002A publication Critical patent/GB2322002A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB9702547A 1997-02-07 1997-02-07 Semiconductor light emitting device Withdrawn GB2322002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9702547A GB2322002A (en) 1997-02-07 1997-02-07 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9702547A GB2322002A (en) 1997-02-07 1997-02-07 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
GB9702547D0 true GB9702547D0 (en) 1997-03-26
GB2322002A GB2322002A (en) 1998-08-12

Family

ID=10807264

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9702547A Withdrawn GB2322002A (en) 1997-02-07 1997-02-07 Semiconductor light emitting device

Country Status (1)

Country Link
GB (1) GB2322002A (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107588A (en) * 1982-12-10 1984-06-21 Fujitsu Ltd Optical semiconductor device
FR2656955B1 (en) * 1990-01-10 1996-12-13 France Etat SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC COMPONENT.
JPH0834338B2 (en) * 1990-04-18 1996-03-29 三菱電機株式会社 Semiconductor laser
US5216684A (en) * 1990-09-07 1993-06-01 Massachusetts Institute Of Technology Reliable alingaas/algaas strained-layer diode lasers
US5197077A (en) * 1992-02-28 1993-03-23 Mcdonnell Douglas Corporation Low divergence laser
US5222090A (en) * 1992-03-05 1993-06-22 Mcdonnell Douglas Corporation 700-850 nanometer semiconductor diode laser
JPH08172241A (en) * 1994-12-16 1996-07-02 Furukawa Electric Co Ltd:The Semiconductor light emitting element with algainas multiple quantum well
US5541949A (en) * 1995-01-30 1996-07-30 Bell Communications Research, Inc. Strained algainas quantum-well diode lasers

Also Published As

Publication number Publication date
GB2322002A (en) 1998-08-12

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)