GB9610886D0 - Semiconductor laser and method for manufacturing semiconductor laser - Google Patents

Semiconductor laser and method for manufacturing semiconductor laser

Info

Publication number
GB9610886D0
GB9610886D0 GBGB9610886.5A GB9610886A GB9610886D0 GB 9610886 D0 GB9610886 D0 GB 9610886D0 GB 9610886 A GB9610886 A GB 9610886A GB 9610886 D0 GB9610886 D0 GB 9610886D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
manufacturing
manufacturing semiconductor
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9610886.5A
Other versions
GB2299710A (en
GB2299710B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5102083A external-priority patent/JP2823476B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9610886D0 publication Critical patent/GB9610886D0/en
Publication of GB2299710A publication Critical patent/GB2299710A/en
Application granted granted Critical
Publication of GB2299710B publication Critical patent/GB2299710B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB9610886A 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser Expired - Fee Related GB2299710B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP14867992 1992-05-14
JP17748392 1992-06-10
JP1718593 1993-02-04
JP5102083A JP2823476B2 (en) 1992-05-14 1993-04-28 Semiconductor laser and method of manufacturing the same
GB9310004A GB2267602B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser

Publications (3)

Publication Number Publication Date
GB9610886D0 true GB9610886D0 (en) 1996-07-31
GB2299710A GB2299710A (en) 1996-10-09
GB2299710B GB2299710B (en) 1997-01-08

Family

ID=27517188

Family Applications (3)

Application Number Title Priority Date Filing Date
GB9610861A Expired - Lifetime GB2299706B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser
GB9610875A Expired - Fee Related GB2299708B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser
GB9610886A Expired - Fee Related GB2299710B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB9610861A Expired - Lifetime GB2299706B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser
GB9610875A Expired - Fee Related GB2299708B (en) 1992-05-14 1993-05-14 Semiconductor laser and method for manufacturing semiconductor laser

Country Status (1)

Country Link
GB (3) GB2299706B (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716693B2 (en) * 1985-02-08 1998-02-18 ソニー株式会社 Semiconductor laser
WO1988008215A1 (en) * 1987-04-16 1988-10-20 Siemens Aktiengesellschaft Laser diode with buried active layer and lateral current limiting and process for its manufacture
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
US5111469A (en) * 1989-08-15 1992-05-05 Sony Corporation Semiconductor laser

Also Published As

Publication number Publication date
GB9610875D0 (en) 1996-07-31
GB2299710A (en) 1996-10-09
GB2299706A (en) 1996-10-09
GB2299708B (en) 1997-01-08
GB2299706B (en) 1997-01-08
GB2299710B (en) 1997-01-08
GB2299708A (en) 1996-10-09
GB9610861D0 (en) 1996-07-31

Similar Documents

Publication Publication Date Title
GB2267602B (en) Semiconductor laser and method for manufacturing semiconductor laser
GB9418741D0 (en) Semiconductor lasers and method for fabricating semi-conductor lasers
EP0588055A3 (en) Method for manufacturing wafer
GB2265755B (en) Semiconductor laser device and its fabrication method
EP0553856A3 (en) Semiconductor substrate and method for preparing same
GB2292831B (en) Semiconductor laser diode and manufacturing method therefor
EP0476689A3 (en) Semiconductor laser and manufacturing method of the same
GB2221094B (en) Semiconductor laser and method for production thereof
EP0406005A3 (en) Semiconductor laser and manufacture method therefor
GB2292005B (en) Semiconductor laser and method of fabricating semiconductor laser
EP0560358A3 (en) Semiconductor laser and process for fabricating the same
GB2287828B (en) Semiconductor laser device and fabricating method therefor
GB2287124B (en) Semiconductor laser and method for fabricating semiconductor laser
GB2280311B (en) Semiconductor laser and method of producing the semiconductor laser
GB9521891D0 (en) Fabrication method of semiconductor laser
EP0468814A3 (en) Ultraviolet semiconductor laser and method of manufacturing the same
EP0293185A3 (en) Semiconductor laser device and method for manufacturing the same
GB2309121B (en) Semiconductor diode and fabrication method for semiconductor diode
EP0612128A3 (en) Semiconductor laser and method of manufacturing the same.
EP0556461A3 (en) Semiconductor laser
EP0709879A4 (en) Method for manufacturing semiconductor
GB2270590B (en) Semiconductor device and method for its manufacture
HU9302556D0 (en) Palette and method for manufacturing it
EP0548368A4 (en) Compound semiconductor and manufacturing method therefor
GB2299708B (en) Semiconductor laser and method for manufacturing semiconductor laser

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060514