GB9519088D0 - Method of manufacturing flash eeprom cells - Google Patents
Method of manufacturing flash eeprom cellsInfo
- Publication number
- GB9519088D0 GB9519088D0 GBGB9519088.0A GB9519088A GB9519088D0 GB 9519088 D0 GB9519088 D0 GB 9519088D0 GB 9519088 A GB9519088 A GB 9519088A GB 9519088 D0 GB9519088 D0 GB 9519088D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- flash eeprom
- eeprom cells
- manufacturing flash
- manufacturing
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940024257A KR0150050B1 (en) | 1994-09-27 | 1994-09-27 | Fabricating method of flash eeprom cell |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9519088D0 true GB9519088D0 (en) | 1995-11-22 |
GB2293688A GB2293688A (en) | 1996-04-03 |
GB2293688B GB2293688B (en) | 1998-07-22 |
Family
ID=19393521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9519088A Expired - Fee Related GB2293688B (en) | 1994-09-27 | 1995-09-19 | Method of manufacturing flash eeprom cells |
Country Status (4)
Country | Link |
---|---|
US (1) | US5527727A (en) |
KR (1) | KR0150050B1 (en) |
DE (1) | DE19534921C2 (en) |
GB (1) | GB2293688B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69636738D1 (en) * | 1996-12-27 | 2007-01-11 | St Microelectronics Srl | Contact structure for electronic EPROM or flash EPROM semiconductor circuits and their manufacturing method |
US6004829A (en) * | 1997-09-12 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company | Method of increasing end point detection capability of reactive ion etching by adding pad area |
US6017795A (en) * | 1998-05-06 | 2000-01-25 | Taiwan Semiconductor Manufacturing Company | Method of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flash |
US6011289A (en) * | 1998-09-16 | 2000-01-04 | Advanced Micro Devices, Inc. | Metal oxide stack for flash memory application |
CN1324690C (en) * | 2001-06-28 | 2007-07-04 | 旺宏电子股份有限公司 | Process for preparing silicon nitride ROM |
US6624025B2 (en) | 2001-08-27 | 2003-09-23 | Taiwan Semiconductor Manufacturing Company | Method with trench source to increase the coupling of source to floating gate in split gate flash |
KR100577011B1 (en) * | 2002-07-10 | 2006-05-10 | 매그나칩 반도체 유한회사 | Method for forming the semiconductor device |
JP4481557B2 (en) * | 2002-07-17 | 2010-06-16 | Okiセミコンダクタ株式会社 | Method for manufacturing nonvolatile semiconductor memory device |
US20060243524A1 (en) * | 2005-04-29 | 2006-11-02 | Raymond Jarrell | Collapsible hanging scaffold bracket |
CN109461735B (en) * | 2018-10-18 | 2021-03-26 | 上海华力微电子有限公司 | Process integration method for improving multi-step polysilicon etching damage of split-gate structure flash memory |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4852062A (en) * | 1987-09-28 | 1989-07-25 | Motorola, Inc. | EPROM device using asymmetrical transistor characteristics |
US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
US5162247A (en) * | 1988-02-05 | 1992-11-10 | Emanuel Hazani | Process for trench-isolated self-aligned split-gate EEPROM transistor and memory array |
US5364806A (en) * | 1991-08-29 | 1994-11-15 | Hyundai Electronics Industries Co., Ltd. | Method of making a self-aligned dual-bit split gate (DSG) flash EEPROM cell |
US5278439A (en) * | 1991-08-29 | 1994-01-11 | Ma Yueh Y | Self-aligned dual-bit split gate (DSG) flash EEPROM cell |
US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5395779A (en) * | 1994-04-08 | 1995-03-07 | United Microelectronics Corporation | Process of manufacture of split gate EPROM device |
-
1994
- 1994-09-27 KR KR1019940024257A patent/KR0150050B1/en not_active IP Right Cessation
-
1995
- 1995-09-19 GB GB9519088A patent/GB2293688B/en not_active Expired - Fee Related
- 1995-09-21 DE DE19534921A patent/DE19534921C2/en not_active Expired - Fee Related
- 1995-09-26 US US08/534,170 patent/US5527727A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19534921C2 (en) | 2002-10-31 |
GB2293688B (en) | 1998-07-22 |
GB2293688A (en) | 1996-04-03 |
KR960012530A (en) | 1996-04-20 |
DE19534921A1 (en) | 1996-03-28 |
KR0150050B1 (en) | 1998-10-01 |
US5527727A (en) | 1996-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20130919 |