GB9516900D0 - Output voltage controlling circuit in a negative charge pump - Google Patents

Output voltage controlling circuit in a negative charge pump

Info

Publication number
GB9516900D0
GB9516900D0 GBGB9516900.9A GB9516900A GB9516900D0 GB 9516900 D0 GB9516900 D0 GB 9516900D0 GB 9516900 A GB9516900 A GB 9516900A GB 9516900 D0 GB9516900 D0 GB 9516900D0
Authority
GB
United Kingdom
Prior art keywords
output voltage
charge pump
negative charge
controlling circuit
voltage controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9516900.9A
Other versions
GB2292624B (en
GB2292624A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9516900D0 publication Critical patent/GB9516900D0/en
Publication of GB2292624A publication Critical patent/GB2292624A/en
Application granted granted Critical
Publication of GB2292624B publication Critical patent/GB2292624B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
GB9516900A 1994-08-24 1995-08-17 Output voltage controlling circuit in a negative charge pump Expired - Fee Related GB2292624B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940020909A KR0145758B1 (en) 1994-08-24 1994-08-24 Voltage control circuit of semiconductor device

Publications (3)

Publication Number Publication Date
GB9516900D0 true GB9516900D0 (en) 1995-10-18
GB2292624A GB2292624A (en) 1996-02-28
GB2292624B GB2292624B (en) 1998-08-19

Family

ID=19391021

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9516900A Expired - Fee Related GB2292624B (en) 1994-08-24 1995-08-17 Output voltage controlling circuit in a negative charge pump

Country Status (4)

Country Link
US (1) US5563548A (en)
KR (1) KR0145758B1 (en)
CN (1) CN1119852C (en)
GB (1) GB2292624B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0137437B1 (en) * 1994-12-29 1998-06-01 김주용 Output voltage control circuit of charge pump circuit
JP4397062B2 (en) * 1998-11-27 2010-01-13 株式会社ルネサステクノロジ Voltage generation circuit and semiconductor memory device
US7336121B2 (en) * 2001-05-04 2008-02-26 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
US7557642B2 (en) * 2007-08-27 2009-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Low supply voltage bandgap system
US7742266B2 (en) * 2007-09-18 2010-06-22 Ali Corporation ESD/EOS protection circuit and related integrated circuit
US8253477B2 (en) * 2008-05-27 2012-08-28 Analog Devices, Inc. Voltage boost circuit without device overstress
GB201113776D0 (en) 2011-08-10 2011-09-21 British American Tobacco Co Capsule formation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
KR0133933B1 (en) * 1988-11-09 1998-04-25 고스기 노부미쓰 Substrate bios recurrence circuitry
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
IT1251011B (en) * 1991-02-18 1995-04-28 Sgs Thomson Microelectronics CURRENT CONTROL DEVICE ESPECIALLY FOR POWER CIRCUITS IN MOS TECHNOLOGY
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5347171A (en) * 1992-10-15 1994-09-13 United Memories, Inc. Efficient negative charge pump
US5282170A (en) * 1992-10-22 1994-01-25 Advanced Micro Devices, Inc. Negative power supply
US5532915A (en) * 1994-03-23 1996-07-02 Intel Corporation Method and apparatus for providing an ultra low power regulated negative charge pump

Also Published As

Publication number Publication date
GB2292624B (en) 1998-08-19
GB2292624A (en) 1996-02-28
CN1119852C (en) 2003-08-27
KR0145758B1 (en) 1998-08-01
CN1118082A (en) 1996-03-06
KR960009155A (en) 1996-03-22
US5563548A (en) 1996-10-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130817