GB9516246D0 - Method of manufacturing a nonvolatile memory device - Google Patents

Method of manufacturing a nonvolatile memory device

Info

Publication number
GB9516246D0
GB9516246D0 GBGB9516246.7A GB9516246A GB9516246D0 GB 9516246 D0 GB9516246 D0 GB 9516246D0 GB 9516246 A GB9516246 A GB 9516246A GB 9516246 D0 GB9516246 D0 GB 9516246D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
memory device
nonvolatile memory
nonvolatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9516246.7A
Other versions
GB2292255A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9516246D0 publication Critical patent/GB9516246D0/en
Publication of GB2292255A publication Critical patent/GB2292255A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
GB9516246A 1994-08-09 1995-08-08 A method of forming a nonvolatile memory device Withdrawn GB2292255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940019606A KR0135234B1 (en) 1994-08-09 1994-08-09 Fabrication of nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
GB9516246D0 true GB9516246D0 (en) 1995-10-11
GB2292255A GB2292255A (en) 1996-02-14

Family

ID=19390049

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9516246A Withdrawn GB2292255A (en) 1994-08-09 1995-08-08 A method of forming a nonvolatile memory device

Country Status (2)

Country Link
KR (1) KR0135234B1 (en)
GB (1) GB2292255A (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4997781A (en) * 1987-11-24 1991-03-05 Texas Instruments Incorporated Method of making planarized EPROM array
US5166904A (en) * 1988-02-05 1992-11-24 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
FR2635410B1 (en) * 1988-08-11 1991-08-02 Sgs Thomson Microelectronics HIGH INTEGRATED EPROM-TYPE MEMORY WITH MESH ORGANIZATION AND IMPROVED COUPLING FACTOR AND MANUFACTURING METHOD
US5057886A (en) * 1988-12-21 1991-10-15 Texas Instruments Incorporated Non-volatile memory with improved coupling between gates

Also Published As

Publication number Publication date
GB2292255A (en) 1996-02-14
KR0135234B1 (en) 1998-04-22

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)