GB948058A - Improvements in or relating to solid state devices - Google Patents
Improvements in or relating to solid state devicesInfo
- Publication number
- GB948058A GB948058A GB18458/60A GB1845860A GB948058A GB 948058 A GB948058 A GB 948058A GB 18458/60 A GB18458/60 A GB 18458/60A GB 1845860 A GB1845860 A GB 1845860A GB 948058 A GB948058 A GB 948058A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- oxide
- silicon
- layers
- accumulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- 238000009825 accumulation Methods 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229960004643 cupric oxide Drugs 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F7/00—Parametric amplifiers
- H03F7/04—Parametric amplifiers using variable-capacitance element; using variable-permittivity element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F7/00—Parametric amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US819923A US3094671A (en) | 1959-06-12 | 1959-06-12 | Field effect parametric amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB948058A true GB948058A (en) | 1964-01-29 |
Family
ID=25229449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18458/60A Expired GB948058A (en) | 1959-06-12 | 1960-05-25 | Improvements in or relating to solid state devices |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2511948C1 (ru) * | 2013-02-27 | 2014-04-10 | Общество С Ограниченной Ответственностью "Твинн" | Тепловой диод |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3288656A (en) * | 1961-07-26 | 1966-11-29 | Nippon Electric Co | Semiconductor device |
| NL282849A (US06262066-20010717-C00315.png) * | 1961-09-11 | |||
| US3177435A (en) * | 1962-09-21 | 1965-04-06 | Bell Telephone Labor Inc | Amplification by the stimulated emission of bremsstrahlung |
| US3289054A (en) * | 1963-12-26 | 1966-11-29 | Ibm | Thin film transistor and method of fabrication |
| US3479571A (en) * | 1966-09-28 | 1969-11-18 | Nippon Electric Co | Field effect semiconductor device |
| US3863167A (en) * | 1972-07-08 | 1975-01-28 | Licentia Gmbh | Parametric moving field amplifier |
| DE10118541A1 (de) * | 2001-04-14 | 2002-10-17 | Alstom Switzerland Ltd | Verfahren zur Abschätzung der Lebensdauer von Wärmedämmschichten |
| US10158030B2 (en) * | 2017-02-13 | 2018-12-18 | Qualcomm Incorporated | CMOS and bipolar device integration including a tunable capacitor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL96818C (US06262066-20010717-C00315.png) * | 1952-03-14 | |||
| US2773250A (en) * | 1953-05-13 | 1956-12-04 | Int Standard Electric Corp | Device for storing information |
| US2791759A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Semiconductive device |
| US2864953A (en) * | 1956-10-31 | 1958-12-16 | Bell Telephone Labor Inc | Microwave pulse circuits |
| US2970275A (en) * | 1959-05-05 | 1961-01-31 | Rca Corp | Parametric amplifier device |
-
0
- NL NL252543D patent/NL252543A/xx unknown
-
1959
- 1959-06-12 US US819923A patent/US3094671A/en not_active Expired - Lifetime
-
1960
- 1960-03-14 BE BE588588A patent/BE588588A/fr unknown
- 1960-05-25 GB GB18458/60A patent/GB948058A/en not_active Expired
- 1960-06-11 FR FR829729A patent/FR1262795A/fr not_active Expired
- 1960-06-11 DE DE19601416458 patent/DE1416458A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2511948C1 (ru) * | 2013-02-27 | 2014-04-10 | Общество С Ограниченной Ответственностью "Твинн" | Тепловой диод |
Also Published As
| Publication number | Publication date |
|---|---|
| BE588588A (fr) | 1960-07-01 |
| NL252543A (US06262066-20010717-C00315.png) | |
| DE1416458A1 (de) | 1969-03-06 |
| US3094671A (en) | 1963-06-18 |
| FR1262795A (fr) | 1961-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Uhlir | The potential of semiconductor diodes in high-frequency communications | |
| US2954486A (en) | Semiconductor resistance element | |
| US4135168A (en) | Reverse channel GaAsFET oscillator | |
| US3008089A (en) | Semiconductive device comprising p-i-n conductivity layers | |
| US4233573A (en) | Carrier concentration controlled surface acoustic wave variable delay devices | |
| GB1202726A (en) | Solid-state vhf attenuator and tv receiver | |
| US4665374A (en) | Monolithic programmable signal processor using PI-FET taps | |
| US3173100A (en) | Ultrasonic wave amplifier | |
| GB948058A (en) | Improvements in or relating to solid state devices | |
| JPS6264113A (ja) | 弾性表面波装置 | |
| US3432778A (en) | Solid state microstripline attenuator | |
| US2918628A (en) | Semiconductor amplifier | |
| US3755752A (en) | Back-to-back semiconductor high frequency device | |
| US2911601A (en) | Devices for controlling the transmission of electromagnetic waves | |
| Eng | Low-noise properties of microwave backward diodes | |
| US3462700A (en) | Semiconductor amplifier using field effect modulation of tunneling | |
| Reed | The variable-capacitance parametric amplifier | |
| US3378738A (en) | Traveling wave transistor | |
| US3526844A (en) | Electromagnetic wave amplifier including a negative resistance semiconductor diode structure | |
| US5030930A (en) | Surface-acoustic-wave convolver | |
| US3560886A (en) | Variable coupling microstrip parallel-line directional coupler | |
| Sharpless | Gallium-arsenide point-contact diodes | |
| US2776381A (en) | Multielectrode semiconductor circuit element | |
| US3535601A (en) | Frequency-selective semiconductor oscillation device | |
| Highleyman et al. | An analog multiplier using two field effect transistors |