GB937865A - A process for the manufacture of elements in high purity - Google Patents

A process for the manufacture of elements in high purity

Info

Publication number
GB937865A
GB937865A GB3603959A GB3603959A GB937865A GB 937865 A GB937865 A GB 937865A GB 3603959 A GB3603959 A GB 3603959A GB 3603959 A GB3603959 A GB 3603959A GB 937865 A GB937865 A GB 937865A
Authority
GB
United Kingdom
Prior art keywords
silicon
cathode
chamber
heated
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3603959A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB937865A publication Critical patent/GB937865A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/12—Dry methods smelting of sulfides or formation of mattes by gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/02—Elemental selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0937865/III/1> <PICT:0937865/III/2> Pure silicon or tellurium is produced by the thermal decomposition of a halogenide such as, silicon tetrachloride, dichlorsilane, trichlorsilane, monochlorsilane or silicon tetraiodide, in the presence of a non-ionising electric field, the silicon or tellurium being deposited on a cathode. As shown in Fig. 1 a reaction chamber 1 contains a cathode 3 heated to above 1000 DEG C. by an A.C. supply and a cylindrical anode 4. A mixture of silicon tetrachloride and hydrogen is reacted in chamber 1 and silicon is deposited on the cathode 3. In a further embodiment (Fig. 2) a quartz reaction tube 5 is heated to above 1000 DEG C. by an induction coil 7 and the electrodes for producing the non-ionizing field comprise a coiled tomtalum cathode 6 and anode 8. Several electrodes may be arranged in the chamber and the cathodes may also be electrically heated.
GB3603959A 1959-05-25 1959-10-23 A process for the manufacture of elements in high purity Expired GB937865A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1674059 1959-05-25
JP1673959 1959-05-25

Publications (1)

Publication Number Publication Date
GB937865A true GB937865A (en) 1963-09-25

Family

ID=26353133

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3603959A Expired GB937865A (en) 1959-05-25 1959-10-23 A process for the manufacture of elements in high purity

Country Status (6)

Country Link
BE (1) BE583628A (en)
CH (1) CH378044A (en)
DE (1) DE1135667B (en)
FR (1) FR1238079A (en)
GB (1) GB937865A (en)
NL (1) NL244172A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2248635A (en) * 1990-09-14 1992-04-15 Nippon Kin Eki Co Ltd Noble metal-containing overglaze color composition for ceramics containing also thorium resinate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142176A1 (en) * 1983-10-24 1985-05-22 George Gergely Merkl Cubic carbon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863997C (en) * 1951-03-02 1953-01-22 Degussa Separation of elements with a metal-like character from their compounds

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2248635A (en) * 1990-09-14 1992-04-15 Nippon Kin Eki Co Ltd Noble metal-containing overglaze color composition for ceramics containing also thorium resinate
US5273947A (en) * 1990-09-14 1993-12-28 Nippon Kin-Eki Co., Ltd. Noble metal-containing overglaze color composition for ceramics
GB2248635B (en) * 1990-09-14 1994-06-22 Nippon Kin Eki Co Ltd Noble metal-containing overglaze color composition for ceramics

Also Published As

Publication number Publication date
FR1238079A (en) 1960-11-30
NL244172A (en)
DE1135667B (en) 1962-08-30
BE583628A (en) 1960-02-01
CH378044A (en) 1964-05-31

Similar Documents

Publication Publication Date Title
GB787043A (en) Method for production of silicon
DK0635045T3 (en) Manufacture of carbon black
GB908158A (en) A process for depositing semi-conductor material for a gaseous or vaporous compound
GB857086A (en) Process for the manufacture of carbon tetrachloride
GB956076A (en) Process for the production of submicron silicon carbide
GB937865A (en) A process for the manufacture of elements in high purity
GB1072193A (en) The production of metal oxides
GB989381A (en) Superconductors
GB740935A (en) Improvements in or relating to fluorocarbon bromides
US2941012A (en) Preparation of tetrafluoroethylene
Dibeler et al. Multiple ionization of sodium vapor by electron impact
GB1100629A (en) Improvements in or relating to electric gas-discharge torches
GB867227A (en) Improvements in or relating to the manufacture of hydrocyanic acid
GB896113A (en) Improvements in or relating to the manufacture of hydrazine
GB1212848A (en) Process for heating oxygen to high temperatures
US3133871A (en) Preparation of tetrafluoroethylene
GB985174A (en) Preparation of cermets
GB838378A (en) An improved process for the production of metals and other chemical elements of metallic character in a state of high purity
GB863406A (en) Improvements relating to the production of thiocarbonyl fluoride
US2924625A (en) Process for preparing carbon tetrafluoride of high degree of purity from reactants heated in carbon electric arc
US3008798A (en) Preparation of cyanogen fluoride
SU113474A1 (en) The method of obtaining metallic titanium
US3498895A (en) Method of preparing cycloalkanoneoxime hydrochlorides
US2864754A (en) Preparation of tetraborane
Anderson Purification of Sodium Taurocholate