GB9217349D0 - Method of etching a surface of a semiconductor - Google Patents

Method of etching a surface of a semiconductor

Info

Publication number
GB9217349D0
GB9217349D0 GB929217349A GB9217349A GB9217349D0 GB 9217349 D0 GB9217349 D0 GB 9217349D0 GB 929217349 A GB929217349 A GB 929217349A GB 9217349 A GB9217349 A GB 9217349A GB 9217349 D0 GB9217349 D0 GB 9217349D0
Authority
GB
United Kingdom
Prior art keywords
etching
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB929217349A
Other versions
GB2269785A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB9217349A priority Critical patent/GB2269785A/en
Publication of GB9217349D0 publication Critical patent/GB9217349D0/en
Publication of GB2269785A publication Critical patent/GB2269785A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
GB9217349A 1992-08-14 1992-08-14 Etching a surface of a semiconductor Withdrawn GB2269785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9217349A GB2269785A (en) 1992-08-14 1992-08-14 Etching a surface of a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9217349A GB2269785A (en) 1992-08-14 1992-08-14 Etching a surface of a semiconductor

Publications (2)

Publication Number Publication Date
GB9217349D0 true GB9217349D0 (en) 1992-09-30
GB2269785A GB2269785A (en) 1994-02-23

Family

ID=10720398

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9217349A Withdrawn GB2269785A (en) 1992-08-14 1992-08-14 Etching a surface of a semiconductor

Country Status (1)

Country Link
GB (1) GB2269785A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110114863A (en) * 2016-12-20 2019-08-09 朗姆研究公司 Use the system and method for metastable state the free radical selective detachment activated and etching of double gas chamber spray heads

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
WO2020161879A1 (en) * 2019-02-08 2020-08-13 株式会社 日立ハイテクノロジーズ Dry etching method and dry etching apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920004171B1 (en) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 Dry etching apparatus
JPS627130A (en) * 1985-07-03 1987-01-14 Hitachi Ltd Dry etching
US5002632A (en) * 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110114863A (en) * 2016-12-20 2019-08-09 朗姆研究公司 Use the system and method for metastable state the free radical selective detachment activated and etching of double gas chamber spray heads
CN110114863B (en) * 2016-12-20 2024-04-16 朗姆研究公司 System and method for metastable activated radical selective stripping and etching using dual chamber showerhead

Also Published As

Publication number Publication date
GB2269785A (en) 1994-02-23

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)