GB9125048D0 - Electroluminescent device of compound semiconductor and process for fabricating the same - Google Patents

Electroluminescent device of compound semiconductor and process for fabricating the same

Info

Publication number
GB9125048D0
GB9125048D0 GB919125048A GB9125048A GB9125048D0 GB 9125048 D0 GB9125048 D0 GB 9125048D0 GB 919125048 A GB919125048 A GB 919125048A GB 9125048 A GB9125048 A GB 9125048A GB 9125048 D0 GB9125048 D0 GB 9125048D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
same
compound semiconductor
electroluminescent device
electroluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB919125048A
Other versions
GB2250635A (en
GB2250635B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33470990A external-priority patent/JP2593960B2/en
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB9125048D0 publication Critical patent/GB9125048D0/en
Publication of GB2250635A publication Critical patent/GB2250635A/en
Application granted granted Critical
Publication of GB2250635B publication Critical patent/GB2250635B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB9125048A 1990-11-26 1991-11-26 Electroluminescent device of compound semiconductor and process for fabricating the same Expired - Fee Related GB2250635B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32434690 1990-11-26
JP33190990 1990-11-27
JP33470990A JP2593960B2 (en) 1990-11-29 1990-11-29 Compound semiconductor light emitting device and method of manufacturing the same

Publications (3)

Publication Number Publication Date
GB9125048D0 true GB9125048D0 (en) 1992-01-22
GB2250635A GB2250635A (en) 1992-06-10
GB2250635B GB2250635B (en) 1994-09-28

Family

ID=27340046

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9125049A Expired - Fee Related GB2250862B (en) 1990-11-26 1991-11-26 Electroluminescent device of compound semiconductor
GB9125048A Expired - Fee Related GB2250635B (en) 1990-11-26 1991-11-26 Electroluminescent device of compound semiconductor and process for fabricating the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9125049A Expired - Fee Related GB2250862B (en) 1990-11-26 1991-11-26 Electroluminescent device of compound semiconductor

Country Status (1)

Country Link
GB (2) GB2250862B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JP2795226B2 (en) * 1995-07-27 1998-09-10 日本電気株式会社 Semiconductor light emitting device and method of manufacturing the same
DE19613265C1 (en) * 1996-04-02 1997-04-17 Siemens Ag Circuit element, e.g. laser diode
GB2312783B (en) * 1996-05-01 2000-12-13 Epitaxial Products Internat Lt Opto-electronic device with transparent high lateral conductivity current spreading layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3267317A (en) * 1963-02-25 1966-08-16 Rca Corp Device for producing recombination radiation
JPH0268968A (en) * 1988-09-02 1990-03-08 Sharp Corp Compound semiconductor light-emitting device
JPH0391270A (en) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor luminous element

Also Published As

Publication number Publication date
GB9125049D0 (en) 1992-01-22
GB2250635A (en) 1992-06-10
GB2250862A (en) 1992-06-17
GB2250862B (en) 1994-10-19
GB2250635B (en) 1994-09-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee