GB9100618D0 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- GB9100618D0 GB9100618D0 GB919100618A GB9100618A GB9100618D0 GB 9100618 D0 GB9100618 D0 GB 9100618D0 GB 919100618 A GB919100618 A GB 919100618A GB 9100618 A GB9100618 A GB 9100618A GB 9100618 D0 GB9100618 D0 GB 9100618D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900015802A KR920008951A (en) | 1990-10-05 | 1990-10-05 | Semiconductor device having double doped channel stop layer and method of manufacturing same |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9100618D0 true GB9100618D0 (en) | 1991-02-27 |
GB2248516A GB2248516A (en) | 1992-04-08 |
Family
ID=19304337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9100618A Withdrawn GB2248516A (en) | 1990-10-05 | 1991-01-11 | Channel stop arrangement for semiconductor device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH04234161A (en) |
KR (1) | KR920008951A (en) |
DE (1) | DE4101313A1 (en) |
FR (1) | FR2667726A1 (en) |
GB (1) | GB2248516A (en) |
IT (1) | IT1246231B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0170285B1 (en) * | 1995-05-12 | 1999-03-30 | 김광호 | Element separating method of semiconductor device |
EP1538673A4 (en) * | 2002-09-09 | 2009-07-15 | Sanyo Electric Co | Protective device |
KR101106988B1 (en) * | 2010-07-22 | 2012-01-25 | 윤지윤 | A mop |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268847A (en) * | 1977-09-16 | 1981-05-19 | Nippon Electric Co., Ltd. | Semiconductor device having an insulated gate type field effect transistor and method for producing the same |
US4458262A (en) * | 1980-05-27 | 1984-07-03 | Supertex, Inc. | CMOS Device with ion-implanted channel-stop region and fabrication method therefor |
US4411058A (en) * | 1981-08-31 | 1983-10-25 | Hughes Aircraft Company | Process for fabricating CMOS devices with self-aligned channel stops |
JPS5837946A (en) * | 1981-08-31 | 1983-03-05 | Fujitsu Ltd | Mis type semiconductor integrated circuit device |
WO1985004525A1 (en) * | 1984-03-29 | 1985-10-10 | Hughes Aircraft Company | A latch-up resistant cmos structure for vlsi |
JPS61111576A (en) * | 1984-10-13 | 1986-05-29 | Fujitsu Ltd | Semiconductor device |
JPS61207052A (en) * | 1985-03-12 | 1986-09-13 | Sanyo Electric Co Ltd | High withstand voltage cmos semiconductor device |
US4829019A (en) * | 1987-05-12 | 1989-05-09 | Texas Instruments Incorporated | Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment |
JP2772020B2 (en) * | 1989-02-22 | 1998-07-02 | 株式会社東芝 | MOS type semiconductor device |
JPH0766946B2 (en) * | 1989-03-31 | 1995-07-19 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
-
1990
- 1990-10-05 KR KR1019900015802A patent/KR920008951A/en not_active Application Discontinuation
-
1991
- 1991-01-11 GB GB9100618A patent/GB2248516A/en not_active Withdrawn
- 1991-01-17 JP JP3004040A patent/JPH04234161A/en active Pending
- 1991-01-18 IT ITMI910106A patent/IT1246231B/en active IP Right Grant
- 1991-01-18 DE DE4101313A patent/DE4101313A1/en not_active Withdrawn
- 1991-01-21 FR FR9100621A patent/FR2667726A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
ITMI910106A0 (en) | 1991-01-18 |
FR2667726A1 (en) | 1992-04-10 |
KR920008951A (en) | 1992-05-28 |
IT1246231B (en) | 1994-11-16 |
DE4101313A1 (en) | 1992-04-09 |
JPH04234161A (en) | 1992-08-21 |
ITMI910106A1 (en) | 1992-07-18 |
GB2248516A (en) | 1992-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |