GB907490A - Improvements in or relating to ceramic barrier layer capacitors - Google Patents
Improvements in or relating to ceramic barrier layer capacitorsInfo
- Publication number
- GB907490A GB907490A GB2878360A GB2878360A GB907490A GB 907490 A GB907490 A GB 907490A GB 2878360 A GB2878360 A GB 2878360A GB 2878360 A GB2878360 A GB 2878360A GB 907490 A GB907490 A GB 907490A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- zone
- barrier layer
- thickness
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 230000004888 barrier function Effects 0.000 title abstract 3
- 239000000919 ceramic Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
907,490. Semi-conductor devices; capacitors. SIEMENS & HALSKE A.G. Aug. 19, 1960 [Aug. 20, 1959], No. 28783/60. Class 37. A ceramic barrier layer capacitor comprises a semiconductor body having at least two zones of different resistivity, the thickness of the transition region between these zones being so small compared with the thickness of the higher resistivity zone, that under normal bias conditions the space-charge zone extends across the whole of the higher resistivity zone so that capacity does not vary with voltage. Fig. 2 shows a PIN diode in which the thickness of the transition regions between P and I and I and N is thin compared with the width of the intrinsic region. The centre region may be weak N or weak P type instead of intrinsic. Under operating conditions the working range of the applied voltage is such that with reverse bias the space-charge layer just fills the centre zone. An alternative embodiment describes an N-, N, N- or P-, P, P-construction with rectifying electrodes at each end contacting the lowconductivity zones. This may be produced by oxidizing the end surfaces of a reduced, sintered, ferro-electric, ceramic body to form weak conductivity zones. The rectifying electrodes may consist of silver layers. The arrangement provides a barrier layer capacitor in which the capacity is not variable with voltage (since the width of the space-charge layer remains substantially constant) so that for example two A.C. signals may be applied in series to the device without having a modulating effect.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES64531A DE1176757B (en) | 1959-08-20 | 1959-08-20 | Junction capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB907490A true GB907490A (en) | 1962-10-03 |
Family
ID=7497268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2878360A Expired GB907490A (en) | 1959-08-20 | 1960-08-19 | Improvements in or relating to ceramic barrier layer capacitors |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1176757B (en) |
| GB (1) | GB907490A (en) |
| NL (1) | NL254929A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1048346B (en) * | 1959-01-08 | |||
| DE1025994B (en) * | 1954-08-09 | 1958-03-13 | Deutsche Bundespost | Semiconductor arrangement for rectifying, controlling or amplifying electrical or photoelectric currents |
| CA567939A (en) * | 1955-05-27 | 1958-12-23 | R. Roup Rolland | Electrical circuit elements |
-
0
- NL NL254929D patent/NL254929A/xx unknown
-
1959
- 1959-08-20 DE DES64531A patent/DE1176757B/en active Pending
-
1960
- 1960-08-19 GB GB2878360A patent/GB907490A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1176757B (en) | 1964-08-27 |
| NL254929A (en) |
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