GB907164A - Improvements in or relating to the doping of semi-conductor crystals - Google Patents
Improvements in or relating to the doping of semi-conductor crystalsInfo
- Publication number
- GB907164A GB907164A GB2738760A GB2738760A GB907164A GB 907164 A GB907164 A GB 907164A GB 2738760 A GB2738760 A GB 2738760A GB 2738760 A GB2738760 A GB 2738760A GB 907164 A GB907164 A GB 907164A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tube
- tantalum
- vessel
- doping
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052715 tantalum Inorganic materials 0.000 abstract 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 8
- 239000000126 substance Substances 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000007789 sealing Methods 0.000 abstract 2
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES64342A DE1100820B (de) | 1959-08-07 | 1959-08-07 | Vorrichtung zur Herstellung von Halbleiter-anordnungen durch Dotieren von Halbleiterkoerpern aus der Gasphase und Verfahren mittels einer solchen Vorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
GB907164A true GB907164A (en) | 1962-10-03 |
Family
ID=7497114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2738760A Expired GB907164A (en) | 1959-08-07 | 1960-08-08 | Improvements in or relating to the doping of semi-conductor crystals |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH387803A (US07709020-20100504-C00041.png) |
DE (1) | DE1100820B (US07709020-20100504-C00041.png) |
GB (1) | GB907164A (US07709020-20100504-C00041.png) |
NL (1) | NL254549A (US07709020-20100504-C00041.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258658A (en) * | 1978-11-13 | 1981-03-31 | Siemens Aktiengesellschaft | CVD Coating device for small parts |
FR2542432A1 (fr) * | 1983-03-08 | 1984-09-14 | Centre Nat Etd Spatiales | Dispositif chauffant transparent comprenant au moins deux zones a temperatures differentes |
CN101942697A (zh) * | 2010-08-23 | 2011-01-12 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
NL104094C (US07709020-20100504-C00041.png) * | 1956-05-18 | |||
DE1040799B (de) * | 1957-03-15 | 1958-10-09 | Telefunken Gmbh | Anordnung zum Hochreinigen und/oder Dopen eines Halbleiterkoerpers |
-
0
- NL NL254549D patent/NL254549A/xx unknown
-
1959
- 1959-08-07 DE DES64342A patent/DE1100820B/de active Pending
-
1960
- 1960-08-02 CH CH875960A patent/CH387803A/de unknown
- 1960-08-08 GB GB2738760A patent/GB907164A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258658A (en) * | 1978-11-13 | 1981-03-31 | Siemens Aktiengesellschaft | CVD Coating device for small parts |
FR2542432A1 (fr) * | 1983-03-08 | 1984-09-14 | Centre Nat Etd Spatiales | Dispositif chauffant transparent comprenant au moins deux zones a temperatures differentes |
EP0119130A1 (fr) * | 1983-03-08 | 1984-09-19 | Centre National D'etudes Spatiales | Dispositif chauffant transparent comprenant au moins deux zones à températures différentes |
CN101942697A (zh) * | 2010-08-23 | 2011-01-12 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
CN101942697B (zh) * | 2010-08-23 | 2012-11-14 | 清华大学 | 光伏多晶硅铸锭炉测温热电偶套管抽真空装置 |
Also Published As
Publication number | Publication date |
---|---|
NL254549A (US07709020-20100504-C00041.png) | |
CH387803A (de) | 1965-02-15 |
DE1100820B (de) | 1961-03-02 |
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