GB907103A - Improvements relating to the production of transistors - Google Patents
Improvements relating to the production of transistorsInfo
- Publication number
- GB907103A GB907103A GB2424258A GB2424258A GB907103A GB 907103 A GB907103 A GB 907103A GB 2424258 A GB2424258 A GB 2424258A GB 2424258 A GB2424258 A GB 2424258A GB 907103 A GB907103 A GB 907103A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pellet
- wafer
- alloying
- antimony
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000008188 pellet Substances 0.000 abstract 7
- 239000000370 acceptor Substances 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
- H01F1/0311—Compounds
- H01F1/0313—Oxidic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
907,103. Transistors. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. July 3, 1959 [July 28, 1958], No. 24242/58. Class 37. A method of making a graded base junction transistor comprises alloying to opposite faces of a wafer of N(P) type conductivity a first pellet comprising an acceptor (donor) impurity and a second pellet comprising an acceptor and a donor of lower segregation coefficient but higher diffusion constant than the acceptors. During alloying and subsequent cooling a PN junction is formed under the first pellet and a P(N) region overlying a graded restivity N(P) region beneath the second pellet. In the embodiment a low-resistivity surface layer is formed by diffusion of arsenic or antimony vapour into a 20 ohm cm. N type germanium body. Pellets 3 and 5 (Fig. 3) of indium and indium, gallium and antimony respectively and a base contact ring of gold antimony eutectic are then alloyed to the wafer by heating to 800‹ C. for 30 minutes and cooling at a rate of 20 ‹ C. per minute. The depth of alloying is such that PN junction J is with the high resistivity core of the wafer. The device is completed by electrolytically etching troughs 9 and 10 respectively about pellets 3 and 5. Trough 9 is made deeper than the low resistivity layer 2 to isolate pellet 3, which forms the collector electrode, therefrom whereas trough 10 is shallower than the layer to allow a continuous low resistance path from the effective part of the base zone to base contact 8.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2424258A GB907103A (en) | 1958-07-28 | 1958-07-28 | Improvements relating to the production of transistors |
| FR801235A FR1231411A (en) | 1958-07-28 | 1959-07-27 | Improvements in the manufacture of transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2424258A GB907103A (en) | 1958-07-28 | 1958-07-28 | Improvements relating to the production of transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB907103A true GB907103A (en) | 1962-10-03 |
Family
ID=10208666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2424258A Expired GB907103A (en) | 1958-07-28 | 1958-07-28 | Improvements relating to the production of transistors |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1231411A (en) |
| GB (1) | GB907103A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3275482A (en) * | 1963-09-25 | 1966-09-27 | Siemens Ag | Semiconductor p-n junction device and method of its manufacture |
-
1958
- 1958-07-28 GB GB2424258A patent/GB907103A/en not_active Expired
-
1959
- 1959-07-27 FR FR801235A patent/FR1231411A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3275482A (en) * | 1963-09-25 | 1966-09-27 | Siemens Ag | Semiconductor p-n junction device and method of its manufacture |
| DE1236661B (en) * | 1963-09-25 | 1967-03-16 | Siemens Ag | Semiconductor arrangement with a pn junction produced by alloying a metal pill |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1231411A (en) | 1960-09-29 |
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