GB9013726D0 - A semiconductor device and a method of manufacturing such a device - Google Patents

A semiconductor device and a method of manufacturing such a device

Info

Publication number
GB9013726D0
GB9013726D0 GB909013726A GB9013726A GB9013726D0 GB 9013726 D0 GB9013726 D0 GB 9013726D0 GB 909013726 A GB909013726 A GB 909013726A GB 9013726 A GB9013726 A GB 9013726A GB 9013726 D0 GB9013726 D0 GB 9013726D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB909013726A
Other versions
GB2245418A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to GB9013726A priority Critical patent/GB2245418A/en
Publication of GB9013726D0 publication Critical patent/GB9013726D0/en
Priority to EP91201471A priority patent/EP0462656A1/en
Priority to JP16872791A priority patent/JP3309995B2/en
Priority to KR1019910009947A priority patent/KR100223725B1/en
Priority to US07/717,304 priority patent/US5258633A/en
Publication of GB2245418A publication Critical patent/GB2245418A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53271Conductive materials containing semiconductor material, e.g. polysilicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB9013726A 1990-06-20 1990-06-20 A semiconductor device and a method of manufacturing such a device Withdrawn GB2245418A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9013726A GB2245418A (en) 1990-06-20 1990-06-20 A semiconductor device and a method of manufacturing such a device
EP91201471A EP0462656A1 (en) 1990-06-20 1991-06-13 A semiconductor device having a conductive track
JP16872791A JP3309995B2 (en) 1990-06-20 1991-06-13 Semiconductor device
KR1019910009947A KR100223725B1 (en) 1990-06-20 1991-06-17 Semiconductor device
US07/717,304 US5258633A (en) 1990-06-20 1991-06-18 Semiconductor device having an IGFET with diffused gate connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9013726A GB2245418A (en) 1990-06-20 1990-06-20 A semiconductor device and a method of manufacturing such a device

Publications (2)

Publication Number Publication Date
GB9013726D0 true GB9013726D0 (en) 1990-08-08
GB2245418A GB2245418A (en) 1992-01-02

Family

ID=10677900

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9013726A Withdrawn GB2245418A (en) 1990-06-20 1990-06-20 A semiconductor device and a method of manufacturing such a device

Country Status (5)

Country Link
US (1) US5258633A (en)
EP (1) EP0462656A1 (en)
JP (1) JP3309995B2 (en)
KR (1) KR100223725B1 (en)
GB (1) GB2245418A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19523536A1 (en) * 1994-07-12 1996-01-18 Siemens Ag CMOS FET and complementary bipolar transistor mfr.

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1762436C3 (en) * 1968-06-15 1975-12-18 Philips Patentverwaltung Gmbh, 2000 Hamburg Link circuit in TTL technology
DE1812790A1 (en) * 1968-12-05 1970-06-11 Itt Ind Gmbh Deutsche Method for producing a low-ohmic resistance or an electrical connection in a monolithic solid-state circuit
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US4400865A (en) * 1980-07-08 1983-08-30 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
DE3037744A1 (en) * 1980-10-06 1982-05-19 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED TWO-TRANSISTOR MEMORY CELL IN MOS TECHNOLOGY
US4424621A (en) * 1981-12-30 1984-01-10 International Business Machines Corporation Method to fabricate stud structure for self-aligned metallization
US4521799A (en) * 1982-12-27 1985-06-04 Motorola, Inc. Crossunder within an active device
US4673965A (en) * 1983-02-22 1987-06-16 General Motors Corporation Uses for buried contacts in integrated circuits
JPS59112648A (en) 1983-11-28 1984-06-29 Toshiba Corp Manufacture of semiconductor device
US4641170A (en) * 1983-12-12 1987-02-03 International Business Machines Corporation Self-aligned lateral bipolar transistors
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JP2537936B2 (en) * 1986-04-23 1996-09-25 エイ・ティ・アンド・ティ・コーポレーション Semiconductor device manufacturing process
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
US5065209A (en) * 1987-01-30 1991-11-12 Texas Instruments Incorporated Bipolar transistor fabrication utilizing CMOS techniques
JPS63239856A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US4902640A (en) * 1987-04-17 1990-02-20 Tektronix, Inc. High speed double polycide bipolar/CMOS integrated circuit process
KR900001062B1 (en) * 1987-09-15 1990-02-26 강진구 Manufacture of bicmos

Also Published As

Publication number Publication date
EP0462656A1 (en) 1991-12-27
JPH04230038A (en) 1992-08-19
JP3309995B2 (en) 2002-07-29
US5258633A (en) 1993-11-02
KR100223725B1 (en) 1999-10-15
GB2245418A (en) 1992-01-02

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)