GB9013726D0 - A semiconductor device and a method of manufacturing such a device - Google Patents
A semiconductor device and a method of manufacturing such a deviceInfo
- Publication number
- GB9013726D0 GB9013726D0 GB909013726A GB9013726A GB9013726D0 GB 9013726 D0 GB9013726 D0 GB 9013726D0 GB 909013726 A GB909013726 A GB 909013726A GB 9013726 A GB9013726 A GB 9013726A GB 9013726 D0 GB9013726 D0 GB 9013726D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9013726A GB2245418A (en) | 1990-06-20 | 1990-06-20 | A semiconductor device and a method of manufacturing such a device |
EP91201471A EP0462656A1 (en) | 1990-06-20 | 1991-06-13 | A semiconductor device having a conductive track |
JP16872791A JP3309995B2 (en) | 1990-06-20 | 1991-06-13 | Semiconductor device |
KR1019910009947A KR100223725B1 (en) | 1990-06-20 | 1991-06-17 | Semiconductor device |
US07/717,304 US5258633A (en) | 1990-06-20 | 1991-06-18 | Semiconductor device having an IGFET with diffused gate connection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9013726A GB2245418A (en) | 1990-06-20 | 1990-06-20 | A semiconductor device and a method of manufacturing such a device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9013726D0 true GB9013726D0 (en) | 1990-08-08 |
GB2245418A GB2245418A (en) | 1992-01-02 |
Family
ID=10677900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9013726A Withdrawn GB2245418A (en) | 1990-06-20 | 1990-06-20 | A semiconductor device and a method of manufacturing such a device |
Country Status (5)
Country | Link |
---|---|
US (1) | US5258633A (en) |
EP (1) | EP0462656A1 (en) |
JP (1) | JP3309995B2 (en) |
KR (1) | KR100223725B1 (en) |
GB (1) | GB2245418A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19523536A1 (en) * | 1994-07-12 | 1996-01-18 | Siemens Ag | CMOS FET and complementary bipolar transistor mfr. |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1762436C3 (en) * | 1968-06-15 | 1975-12-18 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Link circuit in TTL technology |
DE1812790A1 (en) * | 1968-12-05 | 1970-06-11 | Itt Ind Gmbh Deutsche | Method for producing a low-ohmic resistance or an electrical connection in a monolithic solid-state circuit |
GB1447675A (en) * | 1973-11-23 | 1976-08-25 | Mullard Ltd | Semiconductor devices |
JPS55132055A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Mos integrated circuit |
US4400865A (en) * | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
DE3037744A1 (en) * | 1980-10-06 | 1982-05-19 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED TWO-TRANSISTOR MEMORY CELL IN MOS TECHNOLOGY |
US4424621A (en) * | 1981-12-30 | 1984-01-10 | International Business Machines Corporation | Method to fabricate stud structure for self-aligned metallization |
US4521799A (en) * | 1982-12-27 | 1985-06-04 | Motorola, Inc. | Crossunder within an active device |
US4673965A (en) * | 1983-02-22 | 1987-06-16 | General Motors Corporation | Uses for buried contacts in integrated circuits |
JPS59112648A (en) | 1983-11-28 | 1984-06-29 | Toshiba Corp | Manufacture of semiconductor device |
US4641170A (en) * | 1983-12-12 | 1987-02-03 | International Business Machines Corporation | Self-aligned lateral bipolar transistors |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JP2537936B2 (en) * | 1986-04-23 | 1996-09-25 | エイ・ティ・アンド・ティ・コーポレーション | Semiconductor device manufacturing process |
US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
US5065209A (en) * | 1987-01-30 | 1991-11-12 | Texas Instruments Incorporated | Bipolar transistor fabrication utilizing CMOS techniques |
JPS63239856A (en) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
US4902640A (en) * | 1987-04-17 | 1990-02-20 | Tektronix, Inc. | High speed double polycide bipolar/CMOS integrated circuit process |
KR900001062B1 (en) * | 1987-09-15 | 1990-02-26 | 강진구 | Manufacture of bicmos |
-
1990
- 1990-06-20 GB GB9013726A patent/GB2245418A/en not_active Withdrawn
-
1991
- 1991-06-13 JP JP16872791A patent/JP3309995B2/en not_active Expired - Fee Related
- 1991-06-13 EP EP91201471A patent/EP0462656A1/en not_active Ceased
- 1991-06-17 KR KR1019910009947A patent/KR100223725B1/en not_active IP Right Cessation
- 1991-06-18 US US07/717,304 patent/US5258633A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0462656A1 (en) | 1991-12-27 |
JPH04230038A (en) | 1992-08-19 |
JP3309995B2 (en) | 2002-07-29 |
US5258633A (en) | 1993-11-02 |
KR100223725B1 (en) | 1999-10-15 |
GB2245418A (en) | 1992-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |