GB8911718D0 - Fabricating transistor and pixel structures for use in liquid crystal displays - Google Patents

Fabricating transistor and pixel structures for use in liquid crystal displays

Info

Publication number
GB8911718D0
GB8911718D0 GB898911718A GB8911718A GB8911718D0 GB 8911718 D0 GB8911718 D0 GB 8911718D0 GB 898911718 A GB898911718 A GB 898911718A GB 8911718 A GB8911718 A GB 8911718A GB 8911718 D0 GB8911718 D0 GB 8911718D0
Authority
GB
United Kingdom
Prior art keywords
liquid crystal
crystal displays
pixel structures
fabricating transistor
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB898911718A
Other versions
GB2219136A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB8911718D0 publication Critical patent/GB8911718D0/en
Publication of GB2219136A publication Critical patent/GB2219136A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/103Materials and properties semiconductor a-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
GB8911718A 1988-05-23 1989-05-22 Transistor and pixel structures for use in liquid crystal displays Withdrawn GB2219136A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19772288A 1988-05-23 1988-05-23

Publications (2)

Publication Number Publication Date
GB8911718D0 true GB8911718D0 (en) 1989-07-05
GB2219136A GB2219136A (en) 1989-11-29

Family

ID=22730493

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8911718A Withdrawn GB2219136A (en) 1988-05-23 1989-05-22 Transistor and pixel structures for use in liquid crystal displays

Country Status (5)

Country Link
JP (1) JPH0235420A (en)
KR (1) KR890017782A (en)
DE (1) DE3916534A1 (en)
FR (1) FR2631743A1 (en)
GB (1) GB2219136A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523866A (en) * 1992-06-04 1996-06-04 Nec Corporation Liquid-crystal display device having slits formed between terminals or along conductors to remove short circuits
US5471330A (en) * 1993-07-29 1995-11-28 Honeywell Inc. Polysilicon pixel electrode
TW381187B (en) * 1997-09-25 2000-02-01 Toshiba Corp Substrate with conductive films and manufacturing method thereof
US6140162A (en) * 1998-06-19 2000-10-31 Lg Electronics Inc. Reduction of masking and doping steps in a method of fabricating a liquid crystal display
JP2010245480A (en) * 2009-04-10 2010-10-28 Hitachi Displays Ltd Display device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160173A (en) * 1984-01-30 1985-08-21 Sharp Corp Thin film transistor
JPS60224277A (en) * 1984-04-20 1985-11-08 Sanyo Electric Co Ltd Thin film transistor
JPS61168262A (en) * 1985-01-21 1986-07-29 Toshiba Corp Manufacture of thin film field effect transistor
US4678282A (en) * 1985-02-19 1987-07-07 Ovonic Imaging Systems, Inc. Active display matrix addressable without crossed lines on any one substrate and method of using the same
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
EP0211402B1 (en) * 1985-08-02 1991-05-08 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
US4704783A (en) * 1986-05-05 1987-11-10 General Electric Company Method for passivating the back channel of amorphous silicon field effect transistors
JPS62285464A (en) * 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd Thin-film transistor array substrate and manufacture thereof
FR2605442B1 (en) * 1986-10-17 1988-12-09 Thomson Csf ELECTROOPTIC VISUALIZATION SCREEN WITH CONTROL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
JPH0691252B2 (en) * 1986-11-27 1994-11-14 日本電気株式会社 Thin film transistor array
JPS63166236A (en) * 1986-12-26 1988-07-09 Toshiba Corp Electronic device

Also Published As

Publication number Publication date
KR890017782A (en) 1989-12-18
FR2631743A1 (en) 1989-11-24
JPH0235420A (en) 1990-02-06
GB2219136A (en) 1989-11-29
DE3916534A1 (en) 1989-12-07

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)