GB8911718D0 - Fabricating transistor and pixel structures for use in liquid crystal displays - Google Patents
Fabricating transistor and pixel structures for use in liquid crystal displaysInfo
- Publication number
- GB8911718D0 GB8911718D0 GB898911718A GB8911718A GB8911718D0 GB 8911718 D0 GB8911718 D0 GB 8911718D0 GB 898911718 A GB898911718 A GB 898911718A GB 8911718 A GB8911718 A GB 8911718A GB 8911718 D0 GB8911718 D0 GB 8911718D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- liquid crystal
- crystal displays
- pixel structures
- fabricating transistor
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19772288A | 1988-05-23 | 1988-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8911718D0 true GB8911718D0 (en) | 1989-07-05 |
GB2219136A GB2219136A (en) | 1989-11-29 |
Family
ID=22730493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8911718A Withdrawn GB2219136A (en) | 1988-05-23 | 1989-05-22 | Transistor and pixel structures for use in liquid crystal displays |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH0235420A (en) |
KR (1) | KR890017782A (en) |
DE (1) | DE3916534A1 (en) |
FR (1) | FR2631743A1 (en) |
GB (1) | GB2219136A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523866A (en) * | 1992-06-04 | 1996-06-04 | Nec Corporation | Liquid-crystal display device having slits formed between terminals or along conductors to remove short circuits |
US5471330A (en) * | 1993-07-29 | 1995-11-28 | Honeywell Inc. | Polysilicon pixel electrode |
TW381187B (en) * | 1997-09-25 | 2000-02-01 | Toshiba Corp | Substrate with conductive films and manufacturing method thereof |
US6140162A (en) * | 1998-06-19 | 2000-10-31 | Lg Electronics Inc. | Reduction of masking and doping steps in a method of fabricating a liquid crystal display |
JP2010245480A (en) * | 2009-04-10 | 2010-10-28 | Hitachi Displays Ltd | Display device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160173A (en) * | 1984-01-30 | 1985-08-21 | Sharp Corp | Thin film transistor |
JPS60224277A (en) * | 1984-04-20 | 1985-11-08 | Sanyo Electric Co Ltd | Thin film transistor |
JPS61168262A (en) * | 1985-01-21 | 1986-07-29 | Toshiba Corp | Manufacture of thin film field effect transistor |
US4678282A (en) * | 1985-02-19 | 1987-07-07 | Ovonic Imaging Systems, Inc. | Active display matrix addressable without crossed lines on any one substrate and method of using the same |
US4646424A (en) * | 1985-08-02 | 1987-03-03 | General Electric Company | Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
EP0211402B1 (en) * | 1985-08-02 | 1991-05-08 | General Electric Company | Process and structure for thin film transistor matrix addressed liquid crystal displays |
US4704783A (en) * | 1986-05-05 | 1987-11-10 | General Electric Company | Method for passivating the back channel of amorphous silicon field effect transistors |
JPS62285464A (en) * | 1986-06-03 | 1987-12-11 | Matsushita Electric Ind Co Ltd | Thin-film transistor array substrate and manufacture thereof |
FR2605442B1 (en) * | 1986-10-17 | 1988-12-09 | Thomson Csf | ELECTROOPTIC VISUALIZATION SCREEN WITH CONTROL TRANSISTORS AND METHOD FOR PRODUCING THE SAME |
JPH0691252B2 (en) * | 1986-11-27 | 1994-11-14 | 日本電気株式会社 | Thin film transistor array |
JPS63166236A (en) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | Electronic device |
-
1989
- 1989-05-10 FR FR8906122A patent/FR2631743A1/en not_active Withdrawn
- 1989-05-15 JP JP1118870A patent/JPH0235420A/en active Pending
- 1989-05-20 DE DE3916534A patent/DE3916534A1/en not_active Withdrawn
- 1989-05-22 GB GB8911718A patent/GB2219136A/en not_active Withdrawn
- 1989-05-23 KR KR1019890006880A patent/KR890017782A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR890017782A (en) | 1989-12-18 |
FR2631743A1 (en) | 1989-11-24 |
JPH0235420A (en) | 1990-02-06 |
GB2219136A (en) | 1989-11-29 |
DE3916534A1 (en) | 1989-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |