GB8901993D0 - Distributed fet amplier and bias voltage supply circuit therefor - Google Patents

Distributed fet amplier and bias voltage supply circuit therefor

Info

Publication number
GB8901993D0
GB8901993D0 GB898901993A GB8901993A GB8901993D0 GB 8901993 D0 GB8901993 D0 GB 8901993D0 GB 898901993 A GB898901993 A GB 898901993A GB 8901993 A GB8901993 A GB 8901993A GB 8901993 D0 GB8901993 D0 GB 8901993D0
Authority
GB
United Kingdom
Prior art keywords
amplier
supply circuit
bias voltage
voltage supply
circuit therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB898901993A
Other versions
GB2211688B (en
GB2211688A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8901993D0 publication Critical patent/GB8901993D0/en
Publication of GB2211688A publication Critical patent/GB2211688A/en
Application granted granted Critical
Publication of GB2211688B publication Critical patent/GB2211688B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Microwave Amplifiers (AREA)
  • Waveguide Connection Structure (AREA)
  • Amplifiers (AREA)
GB8901993A 1987-02-12 1989-01-30 Bias voltage supply circuit Expired - Fee Related GB2211688B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62030553A JPH06101652B2 (en) 1987-02-12 1987-02-12 Bias circuit

Publications (3)

Publication Number Publication Date
GB8901993D0 true GB8901993D0 (en) 1989-03-22
GB2211688A GB2211688A (en) 1989-07-05
GB2211688B GB2211688B (en) 1991-10-02

Family

ID=12306985

Family Applications (4)

Application Number Title Priority Date Filing Date
GB8802792A Expired - Fee Related GB2202401B (en) 1987-02-12 1988-02-08 Distributed fet amplifier and bias voltage supply circuit therefor
GB8901993A Expired - Fee Related GB2211688B (en) 1987-02-12 1989-01-30 Bias voltage supply circuit
GB8901992A Expired - Fee Related GB2213989B (en) 1987-02-12 1989-01-30 Integrated semiconductor structure for a distributed fet amplifier
GB9027392A Expired - Fee Related GB2239364B (en) 1987-02-12 1990-12-18 Distributed fet amplifier

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB8802792A Expired - Fee Related GB2202401B (en) 1987-02-12 1988-02-08 Distributed fet amplifier and bias voltage supply circuit therefor

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB8901992A Expired - Fee Related GB2213989B (en) 1987-02-12 1989-01-30 Integrated semiconductor structure for a distributed fet amplifier
GB9027392A Expired - Fee Related GB2239364B (en) 1987-02-12 1990-12-18 Distributed fet amplifier

Country Status (3)

Country Link
US (1) US4853649A (en)
JP (1) JPH06101652B2 (en)
GB (4) GB2202401B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2625052A1 (en) * 1987-12-18 1989-06-23 Labo Electronique Physique HYPERFREQUENCY CIRCUIT COMPRISING AT LEAST ONE FIELD-LOADED FIELD TRANSISTOR
JPH02260705A (en) * 1989-03-30 1990-10-23 Matsushita Electric Ind Co Ltd Wideband amplifier
FR2697698A1 (en) * 1992-11-04 1994-05-06 Philips Electronique Lab Semiconductor device comprising a broadband, high gain monolithically integrated amplifier circuit.
DE69321921T2 (en) * 1992-12-03 1999-05-27 Koninkl Philips Electronics Nv Compact microwave amplifier circuit that can be used in cascade connection
US5485118A (en) * 1994-06-03 1996-01-16 Massachusetts Institute Of Technology Non-uniformly distributed power amplifier
US5627389A (en) * 1994-07-15 1997-05-06 Schary; Alison High-frequency traveling wave field-effect transistor
JP3594775B2 (en) * 1997-09-19 2004-12-02 三菱電機株式会社 Power amplifier
US6268777B1 (en) 1997-11-20 2001-07-31 Applied Micro Circuits Corporation Single inductor fully integrated differential voltage controlled oscillator with automatic amplitude adjustment and on-chip varactor
US6198352B1 (en) * 1997-11-20 2001-03-06 Applied Micro Circuits Corporation Radio frequency low noise amplifier fabricated in complementary metal oxide semiconductor technology
US6201443B1 (en) 1997-11-20 2001-03-13 Applied Micro Circuits Corporation Radio frequency variable gain amplifier fabricated in complementary metal oxide semiconductor technology
US5959357A (en) * 1998-02-17 1999-09-28 General Electric Company Fet array for operation at different power levels
US6008694A (en) * 1998-07-10 1999-12-28 National Scientific Corp. Distributed amplifier and method therefor
US6081006A (en) * 1998-08-13 2000-06-27 Cisco Systems, Inc. Reduced size field effect transistor
US6275111B1 (en) 2000-06-06 2001-08-14 Motorola, Inc. Power amplifier having two-dimensional FET array
US6563150B1 (en) 2000-07-25 2003-05-13 Alison Schary High frequency field effect transistor
US6788148B2 (en) * 2002-03-11 2004-09-07 Centellax, Inc. Voltage-limited distributed current source for ultra-broadband impedance termination
US7400200B2 (en) * 2006-03-17 2008-07-15 Avago Technologies Wireless Ip Pte Ltd Linear variable gain traveling wave amplifier
US7397308B2 (en) * 2006-09-21 2008-07-08 William Mordarski Traveling wave amplifier with distributed regenerative feedback between drain-to-drain transmission lines and gate-to-gate transmission lines for enhanced high frequency bandwidth
JP6700417B2 (en) * 2016-04-11 2020-05-27 テレフオンアクチーボラゲット エルエム エリクソン（パブル） Modular and scalable power amplifier system
JP6776709B2 (en) * 2016-08-04 2020-10-28 富士通株式会社 Control method for power amplifiers, semiconductor integrated circuits and power amplifiers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291286A (en) * 1979-12-17 1981-09-22 Ford Aerospace & Communications Corporation High bandwidth transversal filter
US4327342A (en) * 1980-07-10 1982-04-27 U.S. Philips Corporation Bandstop filter for very high frequency transmission lines and biassing circuit for a very high frequency transistor comprising this filter

Also Published As

Publication number Publication date
GB8802792D0 (en) 1988-03-09
GB2239364B (en) 1991-10-02
GB2211688B (en) 1991-10-02
GB8901992D0 (en) 1989-03-22
GB2202401B (en) 1991-10-02
JPH06101652B2 (en) 1994-12-12
GB2213989B (en) 1991-10-02
GB2239364A (en) 1991-06-26
GB2211688A (en) 1989-07-05
GB2202401A (en) 1988-09-21
GB2213989A (en) 1989-08-23
JPS63198408A (en) 1988-08-17
GB9027392D0 (en) 1991-02-06
US4853649A (en) 1989-08-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970208