GB889977A - Improvements in or relating to matrix memory storage devices - Google Patents

Improvements in or relating to matrix memory storage devices

Info

Publication number
GB889977A
GB889977A GB2975758A GB2975758A GB889977A GB 889977 A GB889977 A GB 889977A GB 2975758 A GB2975758 A GB 2975758A GB 2975758 A GB2975758 A GB 2975758A GB 889977 A GB889977 A GB 889977A
Authority
GB
United Kingdom
Prior art keywords
pulse
pulses
conductor
read
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2975758A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB889977A publication Critical patent/GB889977A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • G11C11/06014Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit using one such element per bit
    • G11C11/06021Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit using one such element per bit with destructive read-out
    • G11C11/06028Matrixes
    • G11C11/06042"word"-organised, e.g. 2D organisation or linear selection, i.e. full current selection through all the bit-cores of a word during reading

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Digital Magnetic Recording (AREA)
  • Read Only Memory (AREA)

Abstract

889,977. Circuits employing bi-stable magnetic elements. PHILIPS ELECTRICAL INDUSTRIES Ltd. Sept. 17, 1958 [Sept. 20, 1957], No. 29757/58. Class 40 (9). [Also in Group XIX] In a matrix store comprising magnetic elements each coupled with a conductor of a first group and a conductor of a second group, in which binary information is written by applying coincident current pulses of approximately the same strength to a conductor in each group, and the information stored in elements coupled with the same first group conductor is read out by applying a current pulse of opposite polarity to this conductor, the strength of the read-out pulses is at least a factor 1-2 higher than the combined strength of the writing pulses fed to the two conductors. In the matrix shown in Fig. 1, a " 1 " is written in one of the cores K 11 -K 44 by applying pulses of amplitude PS2, Fig. 2, simultaneously to the appropriate row conductors H1-H4 and column conductors V1-V4. The selected core thus receives a pulse strength 2PS2 which drives it to positive remanence state P2; when a negative read-out pulse NS (larger than 2PS2) is applied to the associated row conductor, the core is returned to negative remanence state N1 and an output pulse proportional to the distance between P2 and N1 is applied to the associated read-out amplifiers UV1 . . . UV4. Those cores which have received only a half-write pulse PS2 will have been driven to state N3 which is very close to N1 so that they will provide a negligible output pulse in response to pulse NS. Where the core hysteresis loop is not perfectly rectangular, as indicated, this provides an improvement on the known system in which the strength of two half-write pulses (PS1) equals the strength of the read-out pulse NS. The pulses for the row conductors are obtained from switching cores SK1-SK4 in one direction or the other, the larger read-out pulses being obtained owing to the shunting of resistors R2 by rectifiers G.
GB2975758A 1957-09-20 1958-09-17 Improvements in or relating to matrix memory storage devices Expired GB889977A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL220969 1957-09-20

Publications (1)

Publication Number Publication Date
GB889977A true GB889977A (en) 1962-02-21

Family

ID=19750980

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2975758A Expired GB889977A (en) 1957-09-20 1958-09-17 Improvements in or relating to matrix memory storage devices

Country Status (5)

Country Link
CH (1) CH368525A (en)
DE (1) DE1100346B (en)
FR (1) FR1203350A (en)
GB (1) GB889977A (en)
NL (1) NL220969A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274570A (en) * 1961-09-22 1966-09-20 Sperry Rand Corp Time-limited switching for wordorganized memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274570A (en) * 1961-09-22 1966-09-20 Sperry Rand Corp Time-limited switching for wordorganized memory

Also Published As

Publication number Publication date
FR1203350A (en) 1960-01-18
NL220969A (en)
DE1100346B (en) 1961-02-23
CH368525A (en) 1963-04-15

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