GB8716739D0 - Overvoltage protector - Google Patents

Overvoltage protector

Info

Publication number
GB8716739D0
GB8716739D0 GB878716739A GB8716739A GB8716739D0 GB 8716739 D0 GB8716739 D0 GB 8716739D0 GB 878716739 A GB878716739 A GB 878716739A GB 8716739 A GB8716739 A GB 8716739A GB 8716739 D0 GB8716739 D0 GB 8716739D0
Authority
GB
United Kingdom
Prior art keywords
overvoltage protector
overvoltage
protector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878716739A
Other versions
GB2208257B (en
GB2208257A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB8716739A priority Critical patent/GB2208257B/en
Publication of GB8716739D0 publication Critical patent/GB8716739D0/en
Publication of GB2208257A publication Critical patent/GB2208257A/en
Application granted granted Critical
Publication of GB2208257B publication Critical patent/GB2208257B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
GB8716739A 1987-07-16 1987-07-16 Overvoltage protector Expired - Lifetime GB2208257B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8716739A GB2208257B (en) 1987-07-16 1987-07-16 Overvoltage protector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8716739A GB2208257B (en) 1987-07-16 1987-07-16 Overvoltage protector

Publications (3)

Publication Number Publication Date
GB8716739D0 true GB8716739D0 (en) 1987-08-19
GB2208257A GB2208257A (en) 1989-03-15
GB2208257B GB2208257B (en) 1990-11-21

Family

ID=10620739

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8716739A Expired - Lifetime GB2208257B (en) 1987-07-16 1987-07-16 Overvoltage protector

Country Status (1)

Country Link
GB (1) GB2208257B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664760B1 (en) * 1990-07-13 1996-09-27 Sgs Thomson Microelectronics DEVICE FOR PROTECTION AGAINST OVERVOLTAGES AND ITS MONOLITHIC IMPLEMENTATION.
GB9106205D0 (en) * 1991-03-22 1991-05-08 Lucas Ind Plc Breakover diode
GB2256743A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A semiconductor component for transient voltage limiting
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
FR2683946B1 (en) * 1991-11-15 1997-05-09 Sgs Thomson Microelectronics SEMICONDUCTOR COMPONENT FOR PROTECTION AGAINST OVERVOLTAGES.
GB9215017D0 (en) * 1992-07-15 1992-08-26 Texas Instruments Ltd Solid state suppressor
GB9417393D0 (en) * 1994-08-30 1994-10-19 Texas Instruments Ltd A four-region (pnpn) semiconductor device
US7755102B2 (en) * 2006-10-03 2010-07-13 Vishay General Semiconductor Llc High breakdown voltage diode and method of forming same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2113907B (en) * 1981-12-22 1986-03-19 Texas Instruments Ltd Reverse-breakdown pn junction devices

Also Published As

Publication number Publication date
GB2208257B (en) 1990-11-21
GB2208257A (en) 1989-03-15

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20070715