GB871614A - A method for the preparation of silicon - Google Patents
A method for the preparation of siliconInfo
- Publication number
- GB871614A GB871614A GB1353756A GB1353756A GB871614A GB 871614 A GB871614 A GB 871614A GB 1353756 A GB1353756 A GB 1353756A GB 1353756 A GB1353756 A GB 1353756A GB 871614 A GB871614 A GB 871614A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- maintained
- passed
- ammonia
- hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/046—Purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
<PICT:0871614/III/1> Silicon having an impurity content less than one part in a million is prepared by decomposing a silicon hydride which has first been purified by a process of gas chromatography. Silane is prepared by reacting a solution of ammonium bromide in ammonia in vessel 10 with magnesium silicide supplied from side chambers 12. The vessel is maintained at about -50 DEG C. and ammonia is supplied through tube 14. The resulting silicon and other hydrides and excess ammonia are passed through a dephlegmator 16 in a cooling jacket 17, and via refrigerating column 21 to chromatographic separating tubes 24 filled with absorbent material such as Kieselguhr wetted, if desired, with silicone oil and maintained between -60 DEG and -112 DEG C. The constituents emerge in order of their volatilities and may be varified by measuring their thermal conductivities by means of a cell comprising a wire 31 in central tube 30 surrounded by mercury 32 and maintained at a constant temperature by acetone vapour in jacket 33. Current is passed through the wire, the resistivity of which varies with its rate of cooling which depends on the thermal conductivity of the gas. The gases are then passed through a cooled quartz wool trap 35 and filter 37, and the pure monosilane component directed to a thermal decomposition chamber 42 maintained at an appropriate temperature by heater 44 and at low pressure by pump 43. Silicon of an impurity level of one in a million or less is deposited, and appropriate impurities such as boron or phosphorus to give desired electrical conductivity may then be added and the silicon crystallised into a monocrystalline body. The unwanted hydrides may be modified by chemical reaction to produce compounds of differing volatilities more distinguishable from the monosilane. For example for boron hydride the reagent may be water, acetaldehyde, acetone or methyl alcohol, and for phosphorus hydride it may be ammonium sulphate in concentrated sulphuric acid and mercuric chloride in alcohols.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1353756A GB871614A (en) | 1956-05-02 | 1956-05-02 | A method for the preparation of silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1353756A GB871614A (en) | 1956-05-02 | 1956-05-02 | A method for the preparation of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
GB871614A true GB871614A (en) | 1961-06-28 |
Family
ID=10024775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1353756A Expired GB871614A (en) | 1956-05-02 | 1956-05-02 | A method for the preparation of silicon |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB871614A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3322503A (en) * | 1964-05-20 | 1967-05-30 | Bloom Harry | Silicon production process |
EP0073637A1 (en) * | 1981-08-24 | 1983-03-09 | Eagle-Picher Industries, Inc. | Production of elemental silicon from impure silane feed |
US4537759A (en) * | 1981-08-24 | 1985-08-27 | Eagle-Picher Industries, Inc. | Production of elemental silicon from impure silane feed |
DE102009043946A1 (en) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Plant and method for controlling the plant for the production of polycrystalline silicon |
-
1956
- 1956-05-02 GB GB1353756A patent/GB871614A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3322503A (en) * | 1964-05-20 | 1967-05-30 | Bloom Harry | Silicon production process |
EP0073637A1 (en) * | 1981-08-24 | 1983-03-09 | Eagle-Picher Industries, Inc. | Production of elemental silicon from impure silane feed |
US4537759A (en) * | 1981-08-24 | 1985-08-27 | Eagle-Picher Industries, Inc. | Production of elemental silicon from impure silane feed |
DE102009043946A1 (en) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Plant and method for controlling the plant for the production of polycrystalline silicon |
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