GB8420738D0 - Reduced-noise ccd camera - Google Patents

Reduced-noise ccd camera

Info

Publication number
GB8420738D0
GB8420738D0 GB848420738A GB8420738A GB8420738D0 GB 8420738 D0 GB8420738 D0 GB 8420738D0 GB 848420738 A GB848420738 A GB 848420738A GB 8420738 A GB8420738 A GB 8420738A GB 8420738 D0 GB8420738 D0 GB 8420738D0
Authority
GB
United Kingdom
Prior art keywords
reduced
ccd camera
noise ccd
noise
camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB848420738A
Other versions
GB2145600B (en
GB2145600A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8420738D0 publication Critical patent/GB8420738D0/en
Publication of GB2145600A publication Critical patent/GB2145600A/en
Application granted granted Critical
Publication of GB2145600B publication Critical patent/GB2145600B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/40—Circuit details for pick-up tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB08420738A 1983-08-22 1984-08-15 Reduced-noise ccd camera Expired GB2145600B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52549183A 1983-08-22 1983-08-22
US59004484A 1984-03-15 1984-03-15

Publications (3)

Publication Number Publication Date
GB8420738D0 true GB8420738D0 (en) 1984-09-19
GB2145600A GB2145600A (en) 1985-03-27
GB2145600B GB2145600B (en) 1987-06-24

Family

ID=27061806

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08420738A Expired GB2145600B (en) 1983-08-22 1984-08-15 Reduced-noise ccd camera

Country Status (5)

Country Link
KR (1) KR900002385B1 (en)
CA (1) CA1219337A (en)
DE (1) DE3430744A1 (en)
FR (1) FR2551285B1 (en)
GB (1) GB2145600B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661788A (en) * 1985-05-10 1987-04-28 Rca Corporation Tapped CCD delay line with non-destructive charge sensing using floating diffusions
US4677490A (en) * 1985-09-13 1987-06-30 Rca Corporation CCD imager output signal processing using drain output signal and wide-band sampled detected floating-element output signal
JPH11150685A (en) * 1997-11-14 1999-06-02 Sony Corp Solid-state image pickup device, its driving method and camera
JP4419275B2 (en) 1999-06-09 2010-02-24 ソニー株式会社 Solid-state imaging device, driving method thereof, and image input device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30087E (en) * 1972-10-20 1979-08-28 Westinghouse Electric Corp. Coherent sampled readout circuit and signal processor for a charge coupled device array
DE2527577B1 (en) * 1975-06-20 1976-09-09 Siemens Ag Charge injection photoelectric sensor matrix - for large number of picture elements has current amplifier and integrator giving output independent of chip size
JPS5822900B2 (en) * 1978-09-25 1983-05-12 株式会社日立製作所 solid-state imaging device
US4330753A (en) * 1980-06-04 1982-05-18 Eastman Kodak Company Method and apparatus for recovering a signal from a charge transfer device
US4389674A (en) * 1981-03-05 1983-06-21 Leeds & Northrup Company Preamplifier for low voltage signals in the presence of high voltage noise

Also Published As

Publication number Publication date
GB2145600B (en) 1987-06-24
GB2145600A (en) 1985-03-27
FR2551285B1 (en) 1989-04-28
FR2551285A1 (en) 1985-03-01
DE3430744C2 (en) 1988-01-07
CA1219337A (en) 1987-03-17
KR850002001A (en) 1985-04-10
KR900002385B1 (en) 1990-04-13
DE3430744A1 (en) 1985-03-14

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20040814