GB840729A - Improvements in or relating to processes for purifying silicon and/or germanium or alloys or compounds of silicon and/or germanium - Google Patents
Improvements in or relating to processes for purifying silicon and/or germanium or alloys or compounds of silicon and/or germaniumInfo
- Publication number
- GB840729A GB840729A GB2527856A GB2527856A GB840729A GB 840729 A GB840729 A GB 840729A GB 2527856 A GB2527856 A GB 2527856A GB 2527856 A GB2527856 A GB 2527856A GB 840729 A GB840729 A GB 840729A
- Authority
- GB
- United Kingdom
- Prior art keywords
- nitride
- germanium
- silicon
- halide
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Abstract
Silicon and/or germanium, or an alloy or compound of silicon and/or germanium, is purified by mixing it with gaseous or liquid phase with silica nitride, and/or germanium nitride, and then separating it from said nitride. The nitride may be formed in situ, for example by introducing nitrogen. In one embodiment, silicon or germanium is prepared by thermal decomposition and/or reduction of a halide in the presence of nitrogen, and the nitride containing crystals of silicon or germanium obtained are treated with a halogen and/or a halogen acid, especially chlorine or hydrochloric acid, to form a volatile halide, thereby separating it from the nitride, which is not attacked. In another embodiment the halide is mixed with nitrogen and maintained at a temperature above the vaporization point of the halide but below the decomposition temperature of the nitride formed. The substance to be purified may be melted and mixed with the nitride in a crucible, any auxiliary apparatus, e.g. stirrers, being made of, or coated with, the nitride. In an example silicon is freed from copper by melting it, mixing it with silicon nitride and/or nitrogen, and then separating the molten silicon from the solid nitride residue, which retains the impurities.ALSO:Germanium, or an alloy thereof is purified by mixing it in the gaseous or liquid phase with silicon nitride and/or germanium nitride, and then separating the said germanium or alloy from the said nitride. The nitride may be formed in situ, for example by introducing nitrogen. In one embodiment germanium is prepared by thermal decomposition and/or reduction of a halide in the presence of nitrogen, and the nitride-containing crystals of germanium are treated with halogen and/or a halogen acid, especially hydrochloric acid or chlorine, to form the volatile halide, thereby separating it from the nitride, which is not attacked. In another embodiment the halide is mixed with nitrogen and maintained at a temperature above the vaporization point of the halide but below the decomposition temperature of the nitride formed. The substance to be purified may be melted and mixed with the nitride in a crucible, any auxiliary apparatus, e.g. stirrers, being made of, or coated with, the nitride.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE840729X | 1955-08-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB840729A true GB840729A (en) | 1960-07-06 |
Family
ID=6764546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2527856A Expired GB840729A (en) | 1955-08-18 | 1956-08-17 | Improvements in or relating to processes for purifying silicon and/or germanium or alloys or compounds of silicon and/or germanium |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB840729A (en) |
-
1956
- 1956-08-17 GB GB2527856A patent/GB840729A/en not_active Expired
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