GB804405A - Improvements in or relating to titanium oxide rectifiers and the manufacture thereof - Google Patents
Improvements in or relating to titanium oxide rectifiers and the manufacture thereofInfo
- Publication number
- GB804405A GB804405A GB30752/56A GB3075256A GB804405A GB 804405 A GB804405 A GB 804405A GB 30752/56 A GB30752/56 A GB 30752/56A GB 3075256 A GB3075256 A GB 3075256A GB 804405 A GB804405 A GB 804405A
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- manufacture
- plate
- titanium oxide
- steam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electrolytic Production Of Metals (AREA)
Abstract
A titanium plate is heated in steam to provide it with an oxide surface prior to subjecting the plate to anodic oxidation in a fused electrolyte (see Group XXXVI). In one example, the plate is heated in steam at 800 DEG C. for two hours and then for twenty minutes at 900 DEG C. In another example, the plate is heated in steam for two hours at 800 DEG C., then for one hour at 900 DEG C., and lastly, at 1000 DEG C. for ten minutes.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP804405X | 1955-10-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB804405A true GB804405A (en) | 1958-11-12 |
Family
ID=13718306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB30752/56A Expired GB804405A (en) | 1955-10-09 | 1956-10-09 | Improvements in or relating to titanium oxide rectifiers and the manufacture thereof |
Country Status (3)
Country | Link |
---|---|
US (1) | US2822606A (en) |
DE (1) | DE1042133B (en) |
GB (1) | GB804405A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2118978A (en) * | 1982-04-23 | 1983-11-09 | Maschf Augsburg Nuernberg Ag | Forming oxide layer on titanium |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB829170A (en) * | 1957-06-03 | 1960-02-24 | Sperry Rand Corp | Method of bonding an element of semiconducting material to an electrode |
US2978618A (en) * | 1959-04-13 | 1961-04-04 | Thomas E Myers | Semiconductor devices and method of making the same |
US3121830A (en) * | 1960-10-04 | 1964-02-18 | Lockheed Aircraft Corp | Single-crystal rutile capacitor and method of fabrication |
US3293085A (en) * | 1962-09-20 | 1966-12-20 | Little Inc A | Electrically resistive barrier films and elements embodying the same |
US3369133A (en) * | 1962-11-23 | 1968-02-13 | Ibm | Fast responding semiconductor device using light as the transporting medium |
US3359191A (en) * | 1963-02-23 | 1967-12-19 | Matsushita Electric Ind Co Ltd | Method for the manufacture of solid type electrolytic condensers of titanium |
US3310685A (en) * | 1963-05-03 | 1967-03-21 | Gtc Kk | Narrow band emitter devices |
GB1054613A (en) * | 1963-05-31 | 1900-01-01 | ||
US3391309A (en) * | 1963-07-15 | 1968-07-02 | Melpar Inc | Solid state cathode |
US3331998A (en) * | 1965-04-12 | 1967-07-18 | Hughes Aircraft Co | Thin film heterojunction device |
US3373093A (en) * | 1966-03-02 | 1968-03-12 | Continental Oil Co | Method of forming an oxide coating on metals |
US3500145A (en) * | 1967-03-01 | 1970-03-10 | Us Navy | Thin vapor-deposited metal film voltage regulator |
US3512052A (en) * | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
DE3512355A1 (en) * | 1984-04-06 | 1985-10-24 | Teledyne Industries, Inc., Albany, Oreg. | Process for preparing an abrasion-resistant zirconium oxide coating on a zirconium alloy |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL34153C (en) * | 1930-03-08 | 1934-10-23 | Philips Nv | |
BE497748A (en) * | 1949-08-26 | |||
US2749596A (en) * | 1952-01-04 | 1956-06-12 | Robert G Breckenridge | Method of making titanium dioxide rectifiers |
-
1956
- 1956-10-01 US US613073A patent/US2822606A/en not_active Expired - Lifetime
- 1956-10-06 DE DEY203A patent/DE1042133B/en active Pending
- 1956-10-09 GB GB30752/56A patent/GB804405A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2118978A (en) * | 1982-04-23 | 1983-11-09 | Maschf Augsburg Nuernberg Ag | Forming oxide layer on titanium |
Also Published As
Publication number | Publication date |
---|---|
US2822606A (en) | 1958-02-11 |
DE1042133B (en) | 1958-10-30 |
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