GB804405A - Improvements in or relating to titanium oxide rectifiers and the manufacture thereof - Google Patents

Improvements in or relating to titanium oxide rectifiers and the manufacture thereof

Info

Publication number
GB804405A
GB804405A GB30752/56A GB3075256A GB804405A GB 804405 A GB804405 A GB 804405A GB 30752/56 A GB30752/56 A GB 30752/56A GB 3075256 A GB3075256 A GB 3075256A GB 804405 A GB804405 A GB 804405A
Authority
GB
United Kingdom
Prior art keywords
relating
manufacture
plate
titanium oxide
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30752/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB804405A publication Critical patent/GB804405A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

A titanium plate is heated in steam to provide it with an oxide surface prior to subjecting the plate to anodic oxidation in a fused electrolyte (see Group XXXVI). In one example, the plate is heated in steam at 800 DEG C. for two hours and then for twenty minutes at 900 DEG C. In another example, the plate is heated in steam for two hours at 800 DEG C., then for one hour at 900 DEG C., and lastly, at 1000 DEG C. for ten minutes.
GB30752/56A 1955-10-09 1956-10-09 Improvements in or relating to titanium oxide rectifiers and the manufacture thereof Expired GB804405A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP804405X 1955-10-09

Publications (1)

Publication Number Publication Date
GB804405A true GB804405A (en) 1958-11-12

Family

ID=13718306

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30752/56A Expired GB804405A (en) 1955-10-09 1956-10-09 Improvements in or relating to titanium oxide rectifiers and the manufacture thereof

Country Status (3)

Country Link
US (1) US2822606A (en)
DE (1) DE1042133B (en)
GB (1) GB804405A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2118978A (en) * 1982-04-23 1983-11-09 Maschf Augsburg Nuernberg Ag Forming oxide layer on titanium

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode
US2978618A (en) * 1959-04-13 1961-04-04 Thomas E Myers Semiconductor devices and method of making the same
US3121830A (en) * 1960-10-04 1964-02-18 Lockheed Aircraft Corp Single-crystal rutile capacitor and method of fabrication
US3293085A (en) * 1962-09-20 1966-12-20 Little Inc A Electrically resistive barrier films and elements embodying the same
US3369133A (en) * 1962-11-23 1968-02-13 Ibm Fast responding semiconductor device using light as the transporting medium
US3359191A (en) * 1963-02-23 1967-12-19 Matsushita Electric Ind Co Ltd Method for the manufacture of solid type electrolytic condensers of titanium
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
GB1054613A (en) * 1963-05-31 1900-01-01
US3391309A (en) * 1963-07-15 1968-07-02 Melpar Inc Solid state cathode
US3331998A (en) * 1965-04-12 1967-07-18 Hughes Aircraft Co Thin film heterojunction device
US3373093A (en) * 1966-03-02 1968-03-12 Continental Oil Co Method of forming an oxide coating on metals
US3500145A (en) * 1967-03-01 1970-03-10 Us Navy Thin vapor-deposited metal film voltage regulator
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
DE3512355A1 (en) * 1984-04-06 1985-10-24 Teledyne Industries, Inc., Albany, Oreg. Process for preparing an abrasion-resistant zirconium oxide coating on a zirconium alloy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL34153C (en) * 1930-03-08 1934-10-23 Philips Nv
BE497748A (en) * 1949-08-26
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2118978A (en) * 1982-04-23 1983-11-09 Maschf Augsburg Nuernberg Ag Forming oxide layer on titanium

Also Published As

Publication number Publication date
US2822606A (en) 1958-02-11
DE1042133B (en) 1958-10-30

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