GB798691A - Improvements in or relating to processes and apparatus for electrolytic shaping - Google Patents
Improvements in or relating to processes and apparatus for electrolytic shapingInfo
- Publication number
- GB798691A GB798691A GB1251855A GB1251855A GB798691A GB 798691 A GB798691 A GB 798691A GB 1251855 A GB1251855 A GB 1251855A GB 1251855 A GB1251855 A GB 1251855A GB 798691 A GB798691 A GB 798691A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- germanium
- drop
- electrolyte
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000007493 shaping process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000011324 bead Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Weting (AREA)
Abstract
798,691. Electrolysis. SIEMENS & HALSKE AKT.-GES. April 29, 1955 [May 6, 1954], No. 12518/55. Classes 37 and 41. A process for shaping an element of semiconductive material comprises placing a drop of electrolyte between an electrode and the surface of the element, the spacing of the electrode and the element being such that the drop is held therebetween, and passing an electric current through the electrode, drop and element. As shown, an electrode 2 consisting of, or containing, acceptor impurity material is disposed opposite a crystal 1 of n-germanium, being held in a holding device and moved slowly and constantly in the direction of the arrow 3, while a current flows between parts 1 and 2 through a bead of electrolyte 4. Germanium is electrolytically removed until the chain-line profile is produced, and the direction of current is then reversed, to deposit acceptor impurity material from the electrode 2 on the germanium, the electrode meanwhile being moved in the direction of the arrow 5. The acceptor impurity material may be brought into more intimate contact with the germanium by subsequent heat-treatment. The process of the invention may be used to remove material from the surface of the central conductivity zone of an n-p-n or p-n-p transistor to reduce its capacity; electrodes are then disposed on either side of the central zone to produce recesses. The movement of the electrode may be such as to maintain constant the distance between it and the element. The drop of electrolyte may be replenished by forming the electrode as a jet, from which the liquid slowly trickles. A number of electrodes in juxtaposition may be used, and the electrodes may be shaped to produce cavities of predetermined shapes, e.g. round, polygonal, star-shaped or annular, and they may be rotated or moved laterally, or both.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES39040A DE1082786B (en) | 1954-05-06 | 1954-05-06 | Method and device for the shaping electrolytic processing of bodies made of semiconducting or conductive material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB798691A true GB798691A (en) | 1958-07-23 |
Family
ID=7483145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1251855A Expired GB798691A (en) | 1954-05-06 | 1955-04-29 | Improvements in or relating to processes and apparatus for electrolytic shaping |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1082786B (en) |
FR (1) | FR1123551A (en) |
GB (1) | GB798691A (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE565765C (en) * | 1929-07-24 | 1932-12-08 | Vladimir Gusseff | Method and device for the electrolytic processing of metals |
NL144803C (en) * | 1948-02-26 | |||
US2497770A (en) * | 1948-12-29 | 1950-02-14 | Bell Telephone Labor Inc | Transistor-microphone |
-
1954
- 1954-05-06 DE DES39040A patent/DE1082786B/en active Pending
-
1955
- 1955-04-29 GB GB1251855A patent/GB798691A/en not_active Expired
- 1955-05-06 FR FR1123551D patent/FR1123551A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1082786B (en) | 1960-06-02 |
FR1123551A (en) | 1956-09-24 |
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