GB790422A - Improvements in memory systems and switching arrangements therefor - Google Patents

Improvements in memory systems and switching arrangements therefor

Info

Publication number
GB790422A
GB790422A GB32810/54A GB3281054A GB790422A GB 790422 A GB790422 A GB 790422A GB 32810/54 A GB32810/54 A GB 32810/54A GB 3281054 A GB3281054 A GB 3281054A GB 790422 A GB790422 A GB 790422A
Authority
GB
United Kingdom
Prior art keywords
beams
capacitor
binary
targets
ferro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32810/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB790422A publication Critical patent/GB790422A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Video Image Reproduction Devices For Color Tv Systems (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

790,422. Electrical digital data storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 12, 1954 [Nov. 17, 1953], No. 32810/54. Class 106 (1). [Also in Groups XXXIX and XL (a)] A memory system comprises a matrix of binary storage elements X<SP>1</SP>, Y<SP>1</SP>, X<SP>2</SP>, Y<SP>2</SP> . . . and a pair of cathode-ray tubes Sx, Sy having secondary emissive targets 10 and secondary emission collectors 17, the targets of the two tubes being respectively connected to the rows and columns of the matrix, the beams being deflected to select a desired X n Y m co-ordinate and for applying different potentials to the collectors of the two tubes (since V10 is tied to V17 and 17 are connected to flip-flop 26) so as to produce a potential difference of one sign for writing and of the opposite sign for reading at the position X n Y m . The beams are turned on only when the scanning regimes reach the desired X n Y m co-ordinates and are turned off at other times. The memory storage system comprises a plurality of ferro-electric capacitors having four stable states of polarization, two of which are utilized to represent the stored information in terms of binary numbers " one " and " zero; " a barium titanate crystal as dielectric will give the capacitor ferro-electric properties. The two binary states can be distinguished by (a) comparison with a fixed value standard capacitor or preferably (b) by the magnitude of the output current produced by the read-out pulse. In one form, Fig. 2, a single dielectric crystal F is used having two sets of parallel lines X, Y, formed by etching or deposition, on opposite sides thereof respectively, the elementary ferro-electric capacitors being formed where the X, Y lines cross. In writing, the beams of the two cathode-ray switch tubes are turned on by a positive pulse applied to 35 and the beams are deflected to the desired coordinates X<SP>1</SP>, Y<SP>1</SP> of the elementary capacitor to be stored. Two pulses, one of voltage E E amplitude + - and the other of - - are thus 2 2 applied simultaneously to capacitor X<SP>1</SP>, Y<SP>1</SP> by the electron beams and a binary " one" is stored in this capacitor, E being the coercive force. The beams are now cut off and the targets return to ground potential. To ensure that the tube targets 10 are at the correct potentials they are made secondary emissive, grids 17 collecting the secondaries; it is shown that the potentials of 10 follow those of 17, and the potentials of 17 which are equal and opposite are determined by flip-flop 26. The deflecting plates 15, 16 are energized by sawtooth or staircase scanning waveforms and the scanning frequency of Sy is made to be n times the scanning frequency of Sx, where n is the number of columns of the storage matrix, so that all the targets of tube Sy are scanned while the beam in tube Sx is positioned at one target. For reading a pulse is applied to 28 to alter the condition of the flip-flop, and the beams are then turned E on by a pulse to 35. A voltage of - - is now 2 E applied to X<SP>1</SP> and + - to Y<SP>1</SP>, by the respective 2 beams and an output representing the binary " one " is obtained across capacitor 20, or no output results for a binary " zero." Alternatively the reading may be achieved by sensing the current flow in the circuits of collectors 17. In a modification, Fig. 3, there are a plurality of separate ferro-electric capacitors F connected as shown to rows of double leads X and columns of single leads Y. The double leads X are wound oppositely at one end on magnetic core 40 and a secondary winding 45 deriving the output. Reading and writing are effected as in Fig. 2. A number of cathode-ray tubes of the form shown can be used to control and drive the co-ordinate channels of a plurality of matrices of the form of Figs. 2 or 3, as described with reference to Fig. 4 (not shown) for a serial type system, e.g. one using a cubical array of matrices. Paralleltype operation is also possible, a separate flipflop being provided for each matrix.
GB32810/54A 1953-11-17 1954-11-12 Improvements in memory systems and switching arrangements therefor Expired GB790422A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US392615A US2869111A (en) 1953-11-17 1953-11-17 Electron beam switch tube operation of a ferroelectric matrix

Publications (1)

Publication Number Publication Date
GB790422A true GB790422A (en) 1958-02-12

Family

ID=23551323

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32810/54A Expired GB790422A (en) 1953-11-17 1954-11-12 Improvements in memory systems and switching arrangements therefor

Country Status (7)

Country Link
US (1) US2869111A (en)
BE (1) BE533371A (en)
CH (1) CH337235A (en)
DE (1) DE1026995B (en)
FR (1) FR1119684A (en)
GB (1) GB790422A (en)
NL (2) NL192332A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3205483A (en) * 1948-10-01 1965-09-07 Dirks Gerhard Matrix device
US2960613A (en) * 1955-05-12 1960-11-15 Gen Electric Non-linear resonance devices
US2967972A (en) * 1957-04-02 1961-01-10 Philips Corp Electron display device
NL239887A (en) * 1958-03-01
US3159820A (en) * 1958-11-24 1964-12-01 Int Standard Electric Corp Information storage device
US3089091A (en) * 1959-04-07 1963-05-07 Martin Marietta Corp Sequential sampling system using commutating devices providing control signals for biasing and switching of transistors
NL249237A (en) * 1959-05-28
US3132326A (en) * 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US4312684A (en) * 1980-04-07 1982-01-26 General Motors Corporation Selective magnetization of manganese-aluminum alloys
JPS577171A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of znsepn junction
CN104934072B (en) * 2015-05-12 2017-12-05 工业和信息化部电子第五研究所 Single particle effect detection method and system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US843746A (en) * 1901-12-09 1907-02-12 Gen Electric Selective transmitting system.
US1595735A (en) * 1913-03-05 1926-08-10 Schmierer Michel Fluorescent tube
US2355212A (en) * 1942-06-20 1944-08-08 Farnsworth Television & Radio Image reproducing device
US2577283A (en) * 1946-08-14 1951-12-04 Bendix Aviat Corp Code identification system
US2565486A (en) * 1947-11-10 1951-08-28 Int Standard Electric Corp Pulse duration separation system
BE494101A (en) * 1949-03-31
US2658670A (en) * 1949-08-31 1953-11-10 Rca Corp Rate determining device
BE515191A (en) * 1951-12-14

Also Published As

Publication number Publication date
DE1026995B (en) 1958-03-27
US2869111A (en) 1959-01-13
NL192332A (en)
CH337235A (en) 1959-03-31
NL94498C (en)
BE533371A (en)
FR1119684A (en) 1956-06-22

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