GB762868A - Improvements in or relating to circuits using point type transistors - Google Patents

Improvements in or relating to circuits using point type transistors

Info

Publication number
GB762868A
GB762868A GB2256053A GB2256053A GB762868A GB 762868 A GB762868 A GB 762868A GB 2256053 A GB2256053 A GB 2256053A GB 2256053 A GB2256053 A GB 2256053A GB 762868 A GB762868 A GB 762868A
Authority
GB
United Kingdom
Prior art keywords
transistor
resistor
emitter
diode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2256053A
Inventor
Edmund Harry Cooke-Yarborough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Priority to GB2256053A priority Critical patent/GB762868A/en
Publication of GB762868A publication Critical patent/GB762868A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Electronic Switches (AREA)

Abstract

762,868. Transistor pulse delaying; generating single-stable and bi-stable state circuits. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. Nov. 15, 1954 [Aug. 15, 1953], No. 22560/53. Class 40(6) A point contact transistor 20 is arranged to operate with nearly equal emitter and collector currents to feed a load 26, the circuit being triggered by a potential applied to the emitter, the latter being derived from a capacitor 34 charged through a, resistor 35 and discharged through the transistor, A time delay circuit may be formed by triggering to the off state by a pulse applied to the base, the resistorcapacitor combination determining the delay before the circuit is restored to the stable on condition. In the steady state transistor 20 conducts current passing through diode 32 and the emitter-collector path of transistor 20 to the load 26, current also passing through resistor 28 from battery 29. A positive triggering pulse applied at terminal 24 to diode 25 causes the transistor to pass to the non-conducting state, the collector potential and hence that of point X falling to a negative value. The capacitor 34 is charged over resistor 35 until the point X is carried positive with respect to the base, whereupon the transistor conducts, the capacitor 34 discharging rapidly through diode 37 and the emitter-collector path of the transistor. During the off period the base is maintained at the potential of battery 31 due to diode 30 conducting. The resistor 38 ensures adequate current through the transistor when in the on condition. A small resistance may be included in the base lead to improve the resetting sensitivity. A discha,rging transistor may be arranged across the load in the manner described in Specification 762,867. The load may be capacitive and the resistor 38 may be large so that the circuit is unstable in the on condition and then oscillates continuously. A bi-stable state circuit is described, Fig. 2 (not shown) which dispenses with the elements 34...38 and is triggered on by a negative pulse over a diode connected to the base or by a positive pulse applied to the emitter, and reset by a positive pulse applied to terminal 24.
GB2256053A 1953-08-15 1953-08-15 Improvements in or relating to circuits using point type transistors Expired GB762868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2256053A GB762868A (en) 1953-08-15 1953-08-15 Improvements in or relating to circuits using point type transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2256053A GB762868A (en) 1953-08-15 1953-08-15 Improvements in or relating to circuits using point type transistors

Publications (1)

Publication Number Publication Date
GB762868A true GB762868A (en) 1956-12-05

Family

ID=10181405

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2256053A Expired GB762868A (en) 1953-08-15 1953-08-15 Improvements in or relating to circuits using point type transistors

Country Status (1)

Country Link
GB (1) GB762868A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2952784A (en) * 1957-09-27 1960-09-13 Itt Monostable multivibrator
US3144563A (en) * 1960-04-14 1964-08-11 Sylvania Electric Prod Switching circuit employing transistor utilizing minority-carrier storage effect to mintain transistor conducting between input pulses

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2952784A (en) * 1957-09-27 1960-09-13 Itt Monostable multivibrator
US3144563A (en) * 1960-04-14 1964-08-11 Sylvania Electric Prod Switching circuit employing transistor utilizing minority-carrier storage effect to mintain transistor conducting between input pulses

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