GB700232A - Electric circuit elements, devices and systems utilizing semiconductive bodies - Google Patents

Electric circuit elements, devices and systems utilizing semiconductive bodies

Info

Publication number
GB700232A
GB700232A GB21020/49A GB2102049A GB700232A GB 700232 A GB700232 A GB 700232A GB 21020/49 A GB21020/49 A GB 21020/49A GB 2102049 A GB2102049 A GB 2102049A GB 700232 A GB700232 A GB 700232A
Authority
GB
United Kingdom
Prior art keywords
semi
emitter
collector
conductor
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21020/49A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB700232A publication Critical patent/GB700232A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

700,232. Semi-conductor amplifiers. WESTERN ELECTRIC CO., Inc. Aug. 12, 1949 [Aug. 14, 1948 ; Aug. 19, 1948], Nos. 21020/49 and 21021/49. Class 40 (4) [Also in Groups XXXVI and XL (c)] An electric circuit element for translating electrical signals comprises a semi-conductor body having an ohmic connection and two opposed faces each engaging a rectifying contact, the thickness of the material between the rectifying contacts being very small so that current emitted from one contact is collected by the other. The device may be used for amplifying or generating oscillations. In Fig. 1, a wedge-shaped piece 11 of semi-conductive material is mounted on a rod 14, and wire contacts 12, 13 are mounted on rods 15, 16 for engagement with the faces of the semiconductor. The rods 14, 15 and 16 are slidable in bores in a block of insulating material 10 and are maintained in their adjusted position by set screws 17. Electrodes 12 and 13 may act as the emitter and collector electrodes and the rod 14 as the base electrode, whereby with suitable biassing conditions signals applied between the emitter and base electrode appear in amplified form in the collector electrode circuit. In a modification, the semiconductor wedge is mounted in and connected to a tubular metal housing, the rods supporting the rectifying electrodes being supported by insulator blocks fixed in the housing. Fig. 5 shows an alternative arrangement in which a semi-conductive disc 40 with two concave surfaces is mounted in a metal cylinder 43 and maintained in position by spring washer 44. Insulating members 45, 46 secure cylinder 43 in position with respect to the terminal members 47, 48 which support the rods bearing contacts 41 and 42. The semi-conductor disc may alternatively be of plano-concave formation or a thin slab. The device may be connected as an amplifier in some intermediate position in a coaxial line, the bias sources being located at the distant ends of the line. The device may also act as an oscillator, and if the resistance between the base electrode and the rectifying contact region of the semi-conductor is of proper value, positive feedback occurs without the need for any other intercoupling means. The semi-conducting material may consist of N or P-types of either germanium or silicon. A suitable etching and washing process and an electrical forming treatment are described. The collector is biased in the direction of difficult current flow and the emitter in the direction of easy current flow, but owing to potential variation in the body of the block this may mean that the emitter is biassed in the same direction as the collector with respect to the base electrode. The rectifying contact for the collector and the emitter may be provided by means of metallic point contacts, or by having ohmic contacts which engage a region of material of conductivity type opposite to that of the main block of semi-conductor, and this region may be produced by the exchange of material between the contact point and the body during current flow. The element of ;the device may be adjusted during assembly with the aid of an oscilloscope, and visual orifices in the housing or insulator blocks may also be provided for this purpose. Specfications 694,021 and 700,231, [Group XXXVI], are referred to.
GB21020/49A 1948-08-14 1949-08-12 Electric circuit elements, devices and systems utilizing semiconductive bodies Expired GB700232A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US700232XA 1948-08-14 1948-08-14

Publications (1)

Publication Number Publication Date
GB700232A true GB700232A (en) 1953-11-25

Family

ID=22092638

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21020/49A Expired GB700232A (en) 1948-08-14 1949-08-12 Electric circuit elements, devices and systems utilizing semiconductive bodies

Country Status (3)

Country Link
BE (1) BE490647A (en)
DE (1) DE814486C (en)
GB (1) GB700232A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL101253C (en) * 1955-09-12
LU35086A1 (en) * 1956-04-11
GB928110A (en) * 1960-01-06 1963-06-06 Pacific Semiconductors Inc Semiconductor devices and methods for assembling them

Also Published As

Publication number Publication date
BE490647A (en)
DE814486C (en) 1951-09-24

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