GB640982A - Improvements in or relating to methods of and means for growing crystals - Google Patents

Improvements in or relating to methods of and means for growing crystals

Info

Publication number
GB640982A
GB640982A GB11452/44A GB1145244A GB640982A GB 640982 A GB640982 A GB 640982A GB 11452/44 A GB11452/44 A GB 11452/44A GB 1145244 A GB1145244 A GB 1145244A GB 640982 A GB640982 A GB 640982A
Authority
GB
United Kingdom
Prior art keywords
crystal
seed
natural
crystalline material
end faces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11452/44A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brush Development Co
Original Assignee
Brush Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brush Development Co filed Critical Brush Development Co
Publication of GB640982A publication Critical patent/GB640982A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0640982/III/1> Crystals of materials, such as the primary phosphates of potassium and ammonium, which crystallize naturally in elongated prisms with end faces, are grown so as to have large transverse dimensions and moderate lengths by using a seed body of the crystalline material having at least one face disposed at an angle to a longitudinal crystallographic axis of symmetry equal to the angle between one of the end faces and the same axis in the natural crystal and parallel to the end face, and also having a thickness to length ratio that is large in comparison with the ratio of the natural rate of lateral crystal growth to the natural rate of longitudinal growth. The seed bodies may be fabricated from an elongated crystal in a number of ways as indicated in Fig. 1 which shows a crystal of primary ammonium phosphate. For example, the pyramidal ends 21 of the crystal may be cemented together to form a composite seed body (Fig. 2), care being taken that the bases of the two pyramids are perpendicular to the optic axis and equal in area, and that the positive and negative edges bear the same relation to each other that they do in a natural crystal. The polarity of the edges is found experimentally by the application of pressure or by the action of a solvent, such as water, for a short period of time. A single end pyramid may also be used as a seed body, but in this case the base of the pyramid should be protected against the deposition of crystalline material thereon. Inclined sections 24, the major faces of which are parallel to one of the end faces, and prisms 28, 29, may also be used. In order to grow crystals, the seed bodies are mounted in a tank containing a saturated solution of the crystalline material, and the temperature of the solution is then gradually lowered while the tank is rocked slowly from side to side to cause the solution to flow gently back and forth in the direction of the optic axis of the seed bodies. Specification 640,999 is referred to.
GB11452/44A 1943-06-17 1944-06-15 Improvements in or relating to methods of and means for growing crystals Expired GB640982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US640982XA 1943-06-17 1943-06-17

Publications (1)

Publication Number Publication Date
GB640982A true GB640982A (en) 1950-08-02

Family

ID=22053534

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11452/44A Expired GB640982A (en) 1943-06-17 1944-06-15 Improvements in or relating to methods of and means for growing crystals

Country Status (1)

Country Link
GB (1) GB640982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485571A1 (en) * 1980-06-26 1981-12-31 Gen Electric Co Ltd PROCESS FOR FORMING MONOCRYSTALS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485571A1 (en) * 1980-06-26 1981-12-31 Gen Electric Co Ltd PROCESS FOR FORMING MONOCRYSTALS

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