GB301728A - Process for the production of plates for cuprous-oxide rectifiers - Google Patents

Process for the production of plates for cuprous-oxide rectifiers

Info

Publication number
GB301728A
GB301728A GB3280528A GB3280528A GB301728A GB 301728 A GB301728 A GB 301728A GB 3280528 A GB3280528 A GB 3280528A GB 3280528 A GB3280528 A GB 3280528A GB 301728 A GB301728 A GB 301728A
Authority
GB
United Kingdom
Prior art keywords
plates
production
cuprous
oxide
oxide rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3280528A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB301728A publication Critical patent/GB301728A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

301,728. Siemens - Schuckertwerke Akt.-Ges. Dec. 3, 1927, [Convention date]. Void [Published under Sect. 91 of the Acts]. Coating. - In the production of plates forcuprous-oxide rectifiers the plates are heated to a temperature above the dissociation temperature of the copper oxide, e.g. at ordinary atmospheric pressure the temperature used is about 1025‹ C.
GB3280528A 1927-12-03 1928-11-09 Process for the production of plates for cuprous-oxide rectifiers Expired GB301728A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83011D DE570036C (en) 1927-12-03 1927-12-03 Process for the production of plates for copper oxide rectifiers

Publications (1)

Publication Number Publication Date
GB301728A true GB301728A (en) 1930-02-06

Family

ID=25997089

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3280528A Expired GB301728A (en) 1927-12-03 1928-11-09 Process for the production of plates for cuprous-oxide rectifiers

Country Status (3)

Country Link
DE (1) DE570036C (en)
FR (1) FR663830A (en)
GB (1) GB301728A (en)

Also Published As

Publication number Publication date
FR663830A (en) 1929-08-26
DE570036C (en) 1933-02-10

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