GB288499A - Process for the manufacture of plates for copper oxide rectifiers - Google Patents

Process for the manufacture of plates for copper oxide rectifiers

Info

Publication number
GB288499A
GB288499A GB28751/27A GB2875127A GB288499A GB 288499 A GB288499 A GB 288499A GB 28751/27 A GB28751/27 A GB 28751/27A GB 2875127 A GB2875127 A GB 2875127A GB 288499 A GB288499 A GB 288499A
Authority
GB
United Kingdom
Prior art keywords
plates
water
copper oxide
manufacture
oxide rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28751/27A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to GB28751/27A priority Critical patent/GB288499A/en
Publication of GB288499A publication Critical patent/GB288499A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164Oxidation and subsequent heat treatment of the foundation plate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02614Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)

Abstract

288,499. Siemens - Schuckertwerke Akt.-Ges., and Duhme, E. Oct. 28, 1927. Coating.-The oxide coating on copper plates for use in copper oxide rectifiers is produced by heating the plates to temperatures above 1040‹ C. (e.g. 1053‹ C. to 1060‹ C.) and plunging them into warm water (e.g. water at a temperature of 40‹ C. to 60‹ C. in the case of plates of 3 to 5 cm. in diameter). The plates are kept in motion in the water, or the water is stirred during cooling.
GB28751/27A 1927-10-28 1927-10-28 Process for the manufacture of plates for copper oxide rectifiers Expired GB288499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB28751/27A GB288499A (en) 1927-10-28 1927-10-28 Process for the manufacture of plates for copper oxide rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28751/27A GB288499A (en) 1927-10-28 1927-10-28 Process for the manufacture of plates for copper oxide rectifiers

Publications (1)

Publication Number Publication Date
GB288499A true GB288499A (en) 1928-04-12

Family

ID=10280533

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28751/27A Expired GB288499A (en) 1927-10-28 1927-10-28 Process for the manufacture of plates for copper oxide rectifiers

Country Status (1)

Country Link
GB (1) GB288499A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985001521A1 (en) * 1983-10-05 1985-04-11 Ab Thermacore A process for producing a patina, and an arrangement for carrying out the process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985001521A1 (en) * 1983-10-05 1985-04-11 Ab Thermacore A process for producing a patina, and an arrangement for carrying out the process

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