GB2606716B - A method of manufacturing a light emitting device and a light emitting device - Google Patents

A method of manufacturing a light emitting device and a light emitting device Download PDF

Info

Publication number
GB2606716B
GB2606716B GB2106952.1A GB202106952A GB2606716B GB 2606716 B GB2606716 B GB 2606716B GB 202106952 A GB202106952 A GB 202106952A GB 2606716 B GB2606716 B GB 2606716B
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting device
manufacturing
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2106952.1A
Other versions
GB2606716A (en
GB202106952D0 (en
Inventor
Guiney Ivor
Griffiths James
Dixon Sebastian
Thomas Simon
Wallis Robert
Paul Gillin William
Fenwick Oliver
John Humphreys Colin
Weng Zhichao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to GB2106952.1A priority Critical patent/GB2606716B/en
Publication of GB202106952D0 publication Critical patent/GB202106952D0/en
Priority to PCT/EP2022/062675 priority patent/WO2022238425A1/en
Publication of GB2606716A publication Critical patent/GB2606716A/en
Application granted granted Critical
Publication of GB2606716B publication Critical patent/GB2606716B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
GB2106952.1A 2021-05-14 2021-05-14 A method of manufacturing a light emitting device and a light emitting device Active GB2606716B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2106952.1A GB2606716B (en) 2021-05-14 2021-05-14 A method of manufacturing a light emitting device and a light emitting device
PCT/EP2022/062675 WO2022238425A1 (en) 2021-05-14 2022-05-10 A method of manufacturing a light-emitting device and a light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2106952.1A GB2606716B (en) 2021-05-14 2021-05-14 A method of manufacturing a light emitting device and a light emitting device

Publications (3)

Publication Number Publication Date
GB202106952D0 GB202106952D0 (en) 2021-06-30
GB2606716A GB2606716A (en) 2022-11-23
GB2606716B true GB2606716B (en) 2024-02-28

Family

ID=76550611

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2106952.1A Active GB2606716B (en) 2021-05-14 2021-05-14 A method of manufacturing a light emitting device and a light emitting device

Country Status (2)

Country Link
GB (1) GB2606716B (en)
WO (1) WO2022238425A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120256168A1 (en) * 2011-04-08 2012-10-11 Samsung Electronics Co., Ltd. Semiconductor Devices And Methods Of Manufacturing The Same
US20140231752A1 (en) * 2013-02-15 2014-08-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
US20160020280A1 (en) * 2014-07-18 2016-01-21 Samsung Electronics Co., Ltd. Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
US20200343392A1 (en) * 2017-10-13 2020-10-29 Konkuk University Industrial Cooperation Corp Varistor-based photodetector and image sensor comprising same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101271249B1 (en) * 2010-12-22 2013-06-10 한국과학기술원 N-doped Transparent Graphene Film and Method for Preparing the Same
CN102184858A (en) 2011-04-07 2011-09-14 复旦大学 Preparation method of graphene field effect transistor
KR101952363B1 (en) * 2012-04-03 2019-05-22 삼성전자주식회사 Graphene semiconductor device and manufacturing method thereof, and organic light emitting display and memory including graphene semiconductor device
CN103682152A (en) 2012-09-25 2014-03-26 国际商业机器公司 Transparent conductive electrode and forming method therefor, organic light emitting diode (OLED) device and forming method therefor
KR101919426B1 (en) * 2013-01-08 2018-11-19 삼성전자주식회사 Graphene electronic device and Manufacturing method of the same
GB201514542D0 (en) 2015-08-14 2015-09-30 Thomas Simon C S A method of producing graphene
US10734585B2 (en) * 2016-02-23 2020-08-04 Samsung Electronics Co., Ltd. Organic light-emitting apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120256168A1 (en) * 2011-04-08 2012-10-11 Samsung Electronics Co., Ltd. Semiconductor Devices And Methods Of Manufacturing The Same
US20140231752A1 (en) * 2013-02-15 2014-08-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
US20160020280A1 (en) * 2014-07-18 2016-01-21 Samsung Electronics Co., Ltd. Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
US20200343392A1 (en) * 2017-10-13 2020-10-29 Konkuk University Industrial Cooperation Corp Varistor-based photodetector and image sensor comprising same

Also Published As

Publication number Publication date
WO2022238425A1 (en) 2022-11-17
GB2606716A (en) 2022-11-23
GB202106952D0 (en) 2021-06-30

Similar Documents

Publication Publication Date Title
EP3642879A4 (en) Light emitting diode (led) test apparatus and method of manufacture
EP3646384A4 (en) Light emitting diode (led) mass-transfer apparatus and method of manufacture
EP3571494A4 (en) Light emitting diode (led) test apparatus and method of manufacture
EP4095572A4 (en) Light emitting device and manufacturing method therefor
EP4084067A4 (en) Apparatus and method of manufacturing display using light emitting element
EP3818572A4 (en) Light emitting diode and manufacturing method of light emitting diode
EP3850675A4 (en) Micro light emitting diode and manufacturing method of micro light emitting diode
PL3190617T3 (en) Light emitting device and method of fabricating a light emitting device
GB2606716B (en) A method of manufacturing a light emitting device and a light emitting device
GB202216382D0 (en) Light emitting display device and manufacturing method thereof
GB202103040D0 (en) A method of manufacturing a light emitting device and a light emitting device
EP4113606A4 (en) Multi-wavelength light emitting element and method for manufacturing same
EP3979344A4 (en) Light emitting device and manufacturing method therefor
EP3861253C0 (en) Linear led light source and manufacturing method
EP4119497A4 (en) Light emitting material and method for manufacturing same
GB2586861B (en) Light Emitting Diode and method of forming a Light Emitting Diode
GB2588609B (en) Fabricating a loom of light emitting devices
GB202213280D0 (en) A light emitting device of ge
GB202110976D0 (en) Light emitting diode and method
GB202110884D0 (en) Light emitting diode and method
EP3923350A4 (en) Light emitting diode and manufacturing method therefor
EP3925013A4 (en) Light emitting diode device and manufacturing method thereof
KR20220036231A (en) Light source with Narrow Emitting Angle and Manufacturing Method thereof
TWI839293B (en) Light-emitting device and manufacturing method thereof
KR102364729B9 (en) Method of transferring micro light emitting device