GB2595880B - Optoelectronic device and method of manufacture thereof - Google Patents

Optoelectronic device and method of manufacture thereof Download PDF

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Publication number
GB2595880B
GB2595880B GB2008731.8A GB202008731A GB2595880B GB 2595880 B GB2595880 B GB 2595880B GB 202008731 A GB202008731 A GB 202008731A GB 2595880 B GB2595880 B GB 2595880B
Authority
GB
United Kingdom
Prior art keywords
manufacture
optoelectronic device
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2008731.8A
Other versions
GB2595880A (en
GB202008731D0 (en
Inventor
John Zilkie Aaron
Nykänen Henri
Peters Frank
Su-Chang Tsai Charles
Yu Guomin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rockley Photonics Ltd
Original Assignee
Rockley Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockley Photonics Ltd filed Critical Rockley Photonics Ltd
Priority to GB2008731.8A priority Critical patent/GB2595880B/en
Publication of GB202008731D0 publication Critical patent/GB202008731D0/en
Priority to GB2101257.0A priority patent/GB2601842B/en
Priority to PCT/EP2021/065463 priority patent/WO2021250098A1/en
Priority to CN202180056459.1A priority patent/CN116075756A/en
Priority to GB2108233.4A priority patent/GB2596917B/en
Priority to US18/009,084 priority patent/US20230251419A1/en
Publication of GB2595880A publication Critical patent/GB2595880A/en
Application granted granted Critical
Publication of GB2595880B publication Critical patent/GB2595880B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
GB2008731.8A 2020-06-09 2020-06-09 Optoelectronic device and method of manufacture thereof Active GB2595880B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB2008731.8A GB2595880B (en) 2020-06-09 2020-06-09 Optoelectronic device and method of manufacture thereof
GB2101257.0A GB2601842B (en) 2020-06-09 2021-01-29 Optoelectronic device and method of manufacture thereof
GB2108233.4A GB2596917B (en) 2020-06-09 2021-06-09 Optoelectronic device
CN202180056459.1A CN116075756A (en) 2020-06-09 2021-06-09 Optoelectronic component and method for producing the same
PCT/EP2021/065463 WO2021250098A1 (en) 2020-06-09 2021-06-09 Optoelectronic device and method of manufacture thereof
US18/009,084 US20230251419A1 (en) 2020-06-09 2021-06-09 Optoelectronic device and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2008731.8A GB2595880B (en) 2020-06-09 2020-06-09 Optoelectronic device and method of manufacture thereof

Publications (3)

Publication Number Publication Date
GB202008731D0 GB202008731D0 (en) 2020-07-22
GB2595880A GB2595880A (en) 2021-12-15
GB2595880B true GB2595880B (en) 2023-05-10

Family

ID=71615864

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2008731.8A Active GB2595880B (en) 2020-06-09 2020-06-09 Optoelectronic device and method of manufacture thereof

Country Status (1)

Country Link
GB (1) GB2595880B (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245936A1 (en) * 2003-06-03 2004-12-09 Flower Graham Mcrae Integrated circuit device for driving a laser diode with reduced heat transfer and method for fabricating the device
US20120057079A1 (en) * 2009-10-13 2012-03-08 Skorpios Technolgies, Inc. Method and system for hybrid integration of a tunable laser for a cable tv transmitter
US20140321488A1 (en) * 2013-04-30 2014-10-30 Futurewei Technologies, Inc. Tunable Laser With High Thermal Wavelength Tuning Efficiency
US20160211645A1 (en) * 2015-01-20 2016-07-21 Sae Magnetics (H.K.) Ltd. Semiconductor laser apparatus and manufactruing method thereof
US20180026426A1 (en) * 2015-03-20 2018-01-25 Furukawa Electric Co., Ltd. Wavelength tunable laser device and laser module
GB2556995A (en) * 2016-09-29 2018-06-13 Oclaro Tech Ltd Waveguide Structure
US10197730B1 (en) * 2017-11-08 2019-02-05 Globalfoundries Inc. Optical through silicon via
US20190140425A1 (en) * 2017-11-08 2019-05-09 International Business Machines Corporation Electro-optical device with lateral electron blocking layer
GB2571269A (en) * 2018-02-21 2019-08-28 Rockley Photonics Ltd Optoelectronic device
US10509244B1 (en) * 2018-12-11 2019-12-17 Globalfoundries Inc. Optical switches and routers operated by phase-changing materials controlled by heaters
US20200076155A1 (en) * 2017-05-09 2020-03-05 Huawei Technologies Co., Ltd. Reflector structure for tunable laser and tunable laser
GB2589335A (en) * 2019-11-26 2021-06-02 Rockley Photonics Ltd Integrated III-V/silicon optoelectronic device and method of manufacture thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245936A1 (en) * 2003-06-03 2004-12-09 Flower Graham Mcrae Integrated circuit device for driving a laser diode with reduced heat transfer and method for fabricating the device
US20120057079A1 (en) * 2009-10-13 2012-03-08 Skorpios Technolgies, Inc. Method and system for hybrid integration of a tunable laser for a cable tv transmitter
US20140321488A1 (en) * 2013-04-30 2014-10-30 Futurewei Technologies, Inc. Tunable Laser With High Thermal Wavelength Tuning Efficiency
US20160211645A1 (en) * 2015-01-20 2016-07-21 Sae Magnetics (H.K.) Ltd. Semiconductor laser apparatus and manufactruing method thereof
US20180026426A1 (en) * 2015-03-20 2018-01-25 Furukawa Electric Co., Ltd. Wavelength tunable laser device and laser module
GB2556995A (en) * 2016-09-29 2018-06-13 Oclaro Tech Ltd Waveguide Structure
US20200076155A1 (en) * 2017-05-09 2020-03-05 Huawei Technologies Co., Ltd. Reflector structure for tunable laser and tunable laser
US10197730B1 (en) * 2017-11-08 2019-02-05 Globalfoundries Inc. Optical through silicon via
US20190140425A1 (en) * 2017-11-08 2019-05-09 International Business Machines Corporation Electro-optical device with lateral electron blocking layer
GB2571269A (en) * 2018-02-21 2019-08-28 Rockley Photonics Ltd Optoelectronic device
US10509244B1 (en) * 2018-12-11 2019-12-17 Globalfoundries Inc. Optical switches and routers operated by phase-changing materials controlled by heaters
GB2589335A (en) * 2019-11-26 2021-06-02 Rockley Photonics Ltd Integrated III-V/silicon optoelectronic device and method of manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Edge coupling of O-band etched facet lasers to polymer waveguides on SOI" R Loi et al, IEEE Journal of Quantum Electronics, Vol 5, No 1, Feb 2020, page 6400108 *

Also Published As

Publication number Publication date
GB2595880A (en) 2021-12-15
GB202008731D0 (en) 2020-07-22

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