GB2540537A - Crystal defects - Google Patents

Crystal defects Download PDF

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Publication number
GB2540537A
GB2540537A GB1511677.5A GB201511677A GB2540537A GB 2540537 A GB2540537 A GB 2540537A GB 201511677 A GB201511677 A GB 201511677A GB 2540537 A GB2540537 A GB 2540537A
Authority
GB
United Kingdom
Prior art keywords
target
vacancy
crystal lattice
laser
lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1511677.5A
Other languages
English (en)
Other versions
GB201511677D0 (en
Inventor
James Booth Martin
Salter Patrick
Smith Jason
Chen Yu-Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Priority to GB1511677.5A priority Critical patent/GB2540537A/en
Publication of GB201511677D0 publication Critical patent/GB201511677D0/en
Priority to JP2018500316A priority patent/JP6909776B2/ja
Priority to US15/740,340 priority patent/US10934635B2/en
Priority to EP16736600.4A priority patent/EP3317439A1/en
Priority to PCT/GB2016/052004 priority patent/WO2017006092A1/en
Priority to KR1020187003547A priority patent/KR102231517B1/ko
Publication of GB2540537A publication Critical patent/GB2540537A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1511677.5A 2015-07-03 2015-07-03 Crystal defects Withdrawn GB2540537A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB1511677.5A GB2540537A (en) 2015-07-03 2015-07-03 Crystal defects
JP2018500316A JP6909776B2 (ja) 2015-07-03 2016-07-01 結晶格子内の空孔を捕捉する方法
US15/740,340 US10934635B2 (en) 2015-07-03 2016-07-01 Method for trapping vacancies in a crystal lattice
EP16736600.4A EP3317439A1 (en) 2015-07-03 2016-07-01 Method for trapping vacancies in a crystal lattice
PCT/GB2016/052004 WO2017006092A1 (en) 2015-07-03 2016-07-01 Method for trapping vacancies in a crystal lattice
KR1020187003547A KR102231517B1 (ko) 2015-07-03 2016-07-01 결정 격자 내의 공격자점을 트랩하는 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1511677.5A GB2540537A (en) 2015-07-03 2015-07-03 Crystal defects

Publications (2)

Publication Number Publication Date
GB201511677D0 GB201511677D0 (en) 2015-08-19
GB2540537A true GB2540537A (en) 2017-01-25

Family

ID=54013442

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1511677.5A Withdrawn GB2540537A (en) 2015-07-03 2015-07-03 Crystal defects

Country Status (6)

Country Link
US (1) US10934635B2 (https=)
EP (1) EP3317439A1 (https=)
JP (1) JP6909776B2 (https=)
KR (1) KR102231517B1 (https=)
GB (1) GB2540537A (https=)
WO (1) WO2017006092A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019038754A1 (en) 2017-08-22 2019-02-28 Diamtech Ltd. SYSTEM AND METHOD FOR CREATING A PREDEFINED STRUCTURE FROM A DIAMOND MASS
US11685003B2 (en) 2017-08-07 2023-06-27 Oxford University Innovation Limited Method for laser machining inside materials

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12391553B2 (en) 2017-09-18 2025-08-19 The Trustees Of Princeton University Synthetic engineered diamond materials with spin impurities and methods of making the same
GB201808367D0 (en) * 2018-05-22 2018-07-11 Univ Oxford Innovation Ltd Laser writing of colour centres in crystals
US12370622B2 (en) 2018-06-02 2025-07-29 Bruno Scarselli Asset identification, registration, tracking and commercialization apparatuses and methods
CN109384222B (zh) * 2018-09-29 2020-08-07 河南省力量钻石股份有限公司 一种金刚石的提取方法
GB2577928A (en) 2018-10-11 2020-04-15 Univ Oxford Innovation Ltd Laser method and apparatus for analysing crystals
RU2720100C1 (ru) * 2019-03-26 2020-04-24 Акционерная Компания "АЛРОСА" (публичное акционерное общество) (АК "АЛРОСА" (ПАО)) Способ создания и детектирования оптически проницаемого изображения внутри алмаза и системы для детектирования (варианты)
DE102019205217A1 (de) * 2019-04-11 2020-10-15 Robert Bosch Gmbh Verfahren zum Aufbringen einer Filterschicht auf einen Kristallkörper
IL307512B2 (en) 2021-04-06 2025-01-01 Bruno Scarselli Property Verification System and Methods of Using It
FR3121926B1 (fr) * 2021-04-19 2024-02-09 Thales Sa Procede de fabrication d'un dispositif comprenant un cristal de diamant
GB2620414A (en) * 2022-07-06 2024-01-10 Univ Warwick A device
CN120395114A (zh) * 2025-07-03 2025-08-01 浙江大学杭州国际科创中心 一种基于飞秒激光直写的碳化硅自旋缺陷制备方法
CN121541392A (zh) * 2026-01-16 2026-02-17 陕西理工大学 一种基于氧空位工程的太赫兹信号调制方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648892A (ja) * 1992-07-30 1994-02-22 Matsushita Electric Ind Co Ltd ダイヤモンドの格子欠陥制御方法
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
US20100271016A1 (en) * 2009-04-24 2010-10-28 Hewlett-Packard Development Company, L.P. Microfiber Magnetometer
GB2497660A (en) * 2011-12-16 2013-06-19 Element Six Ltd Single crystal CVD synthetic diamond material

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7284396B2 (en) * 2005-03-01 2007-10-23 International Gemstone Registry Inc. Method and system for laser marking in the volume of gemstones such as diamonds
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
JP5874932B2 (ja) * 2009-06-26 2016-03-02 エレメント シックス リミテッド ダイヤモンド材料の処理方法及び得られた製品
WO2012100167A2 (en) * 2011-01-21 2012-07-26 President & Fellows Of Harvard College Micro-and nano-fabrication of connected and disconnected metallic structures in three-dimensions using ultrafast laser pulses

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648892A (ja) * 1992-07-30 1994-02-22 Matsushita Electric Ind Co Ltd ダイヤモンドの格子欠陥制御方法
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
US20100271016A1 (en) * 2009-04-24 2010-10-28 Hewlett-Packard Development Company, L.P. Microfiber Magnetometer
GB2497660A (en) * 2011-12-16 2013-06-19 Element Six Ltd Single crystal CVD synthetic diamond material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11685003B2 (en) 2017-08-07 2023-06-27 Oxford University Innovation Limited Method for laser machining inside materials
WO2019038754A1 (en) 2017-08-22 2019-02-28 Diamtech Ltd. SYSTEM AND METHOD FOR CREATING A PREDEFINED STRUCTURE FROM A DIAMOND MASS
EP3672756A4 (en) * 2017-08-22 2021-06-09 Diamtech Ltd. SYSTEM AND PROCESS FOR GENERATING A PRE-DETERMINED STRUCTURE FROM A DIAMOND MASS
US11559858B2 (en) 2017-08-22 2023-01-24 Diamtech Ltd. System and method for creation of a predetermined structure from a diamond bulk

Also Published As

Publication number Publication date
KR20180026530A (ko) 2018-03-12
US20180187333A1 (en) 2018-07-05
GB201511677D0 (en) 2015-08-19
JP6909776B2 (ja) 2021-07-28
KR102231517B1 (ko) 2021-03-24
US10934635B2 (en) 2021-03-02
WO2017006092A1 (en) 2017-01-12
EP3317439A1 (en) 2018-05-09
JP2018520085A (ja) 2018-07-26

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)