GB2539153A - Liquid crystal medium - Google Patents

Abstract

The invention relates to a liquid crystal medium which contains at least one compound of the formula (I), in which R1 and R1* independently of each other represent an alkyl or alkyl group with 1 to 15 C atoms, wherein in said groups, one or more CH2 groups independently of one another can be replaced with -C=C-, -CF2O-, -OCF2-, -CH=CH-, formula (II), formula (III), -O-, -CO-O-, or -O-CO- such that O atoms are not directly linked to one another, and one or more H atoms can also be replaced with halogen, and L1 and L2 independently of one another represent F, Cl, CF3, or CHF2. The invention also relates to the use of said liquid crystal medium for an active matrix display, in particular an active matrix display based on the VA-, PSA-, PA-VA-, PS-VA-, PALC-, IPS-, PS-IPS-, FFS-, or PS-FFS effect.

Description

P 14/055 -1 -Liquid-crystalline medium The invention relates to a liquid-crystalline medium which comprises at least one compound of the formula I, in which R1 and R1' each, independently of one another, denote an alkyl or alkoxy radical having 1 to 15 C atoms, where, in addition, one or more CH2 groups in these radicals may each be replaced, independently of one another, by -CE-C-, -CF20-, -0CF2-, -CH=CH-, , -00-0- -0-00-in such a way that 0 atoms are not linked directly to one another, and in which, in addition, one or more H atoms may be replaced by halogen, LI and L2 each, independently of one another, denote F, C!, CF3 or CHF2.

Media of this type can be used, in particular, for electro-optical displays having active-matrix addressing based on the ECB effect and for IPS (in-plane switching) displays or FFS (fringe field switching) displays.

The principle of electrically controlled birefringence, the ECB effect or also DAP (deformation of aligned phases) effect, was described for the first time in 1971 (M.F. Schieckel and K. Fahrenschon, "Deformation of nematic liquid crystals with vertical orientation in electrical fields", Appl. Phys. Left 19 (1971), 3912). This was followed by papers by J.F. Kahn (Appl. Phys. Lett. 20 (1972), 1193) and G. Labrunie and' Robert (J. Appl. Phys. 44 (1973), 4869).

P 14/055 The papers by J. Robert and F. Clerc (SID 80 Digest Techn, Papers (1980), 30), J. Duchene (Displays 7 (1986), 3) and H. Schad (SID 82 Digest Techn. Papers (1982), 244) showed that liquid-crystalline phases must have high values for the ratio of the elastic constants KAKI, high values for the optical anisotropy An and values for the dielectric anisotropy of AE -0,5 in order to be suitable for use in high-information display elements based on the ECB effect. Electro-optical display elements based on the ECB effect have a homeotropic edge alignment (VA technology = verti-cally aligned). Dielectrically negative liquid-crystal media can also be used in displays which use the so-called IPS or I=FS effect.

Displays which use the ECB effect, as so-called VAN (verticaliy aligned nematic) displays, for example in the MVA (multi-domain vertical align-ment, for example; Yoshide, H. et al., paper 3.1: "MVA LCD for Notebook or Mobile PCs...°', SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book I, pp. 6 to 9, and Liu, C,T. et al., paper 15.1: "A 46-inch TFT-LCD HDTV Technology...", SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 750 to 753), PVA (patterned vertical alignment, for example: Kim, Sang Soo, paper 15.4: "Super PVA Sets New State-of-the-Art for LCD-TV", SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 760 to 763), ASV (advanced super view, for example: Shigeta, Mitzuhiro and Fukuoka, Hirofumi, paper 15.2: "Development of High Quality LCDTV", SID 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp. 754 to 757) modes, have established themselves as one of the three more recent types of liquid-crystal display that are currently the most important, in particular for television applications, besides IPS (in-plane switching) displays (for example: Yeo, S.D., paper 15.3: "An LC Display for the TV Application", SIC) 2004 International Symposium, Digest of Technical Papers, XXXV, Book II, pp, 758 & 759) and the long-known TN (twisted nematic) displays. The technologies are compared in general form, for example, in Souk, Jun, SID Seminar 2004, seminar M-6: "Recent Advances in LCD Technology", Seminar Lecture Notes, M-6/1 to M-6/26, and Miller, lan, SID Seminar 2004, seminar M-7: "LCD-Television", Semi-nar Lecture Notes, M-7/1 to M-7/32. Although the response times of modern ECB displays have already been significantly improved by addressing P 14/055 -3 -methods sith overdrive, for example: Kim, Hyeon Kyeong et al., paper 9.1: "A 57-in. Wide UXGA TFT-LCD for HDTV Application", SIE) 2004 International Symposium, Digest of Technical Papers, XXXV, Book I, pp. 106 to 109, the achievement of video-compatible response times, in particular on switching of grey shades, is still a problem which has not yet been satisfactorily solved.

Industrial application of this effect in electro-optical display elements requires LC phases, which have to satisfy a multiplicity of requirements.

Particularly important here are chemical resistance to moisture, air and physical influences, such as heat, infrared, visible and ultraviolet radiation and direct and alternating electric fields.

Furthermore, industrially usable LC phases are required to have a liquid-crystalline mesophase in a suitable temperature range and low viscosity.

None of the hitherto-disclosed series of compounds having a liquid-crystalline mesophase includes a single compound which meets all these require- ments. Mixtures of two to 25, preferably three to 18, compounds are there-fore generally prepared in order to obtain substances which can be used as LC phases. However, it has not been possible to prepare optimum phases easily in this way since no liquid-crystal materials having significantly negative dielectric anisotropy and adequate long-term stability were hitherto available, Matrix liquid-crystal displays (MLC displays) are known. Non-linear elements which can be used for individual switching of the individual pixels are, for example, active elements (i.e. transistors). The term "active matrix" is then used, where a distinction can be made between two types: MOS (metal oxide semiconductor) transistors on a silicon wafer as substrate 2. thin-film transistors (TFTs) on a glass plate as substrate, P 14/055 -4 -In the case of type 1, the electro-optical effect used is usually dynamic scattering or the guest-host effect. The use of single-crystal silicon as substrate material restricts the display size; since even modular assembly of various part-displays results in problems at the joints.

In the case of the more promising type 2, which is preferred, the electrooptical effect used is usually the TN effect.

A distinction is made between two technologies: TFTs comprising com-pound semiconductors, such as, for example, CdSe, or TFTs based on polycrystalline or amorphous silicon. The latter technology is being worked on intensively worldwide.

The TFT matrix is applied to the inside of one glass plate of the display, while the other glass plate carries the transparent counterelectrode on its inside. Compared with the size of the pixel electrode, the TFT is very small and has virtually no adverse effect on the image. This technology can also be extended to fully colour-capable displays, in which a mosaic of red, green and blue filters is arranged in such a way that a filter element is opposite each switchable pixel.

The term MLC displays here covers any matrix display with integrated nonlinear elements, i.e. besides the active matrix, also displays with passive elements, such as varistors or diodes (MIM = metal-insulator-metal).

MLC displays of this type are particularly suitable for TV applications (for example pocket TVs) or for high-information displays in automobile or aircraft construction. Besides problems regarding the angle dependence of the contrast and the response times, difficulties also arise in MLC displays due to insufficiently high specific resistance of the liquid-crystal mixtures [TOGASHI, S., SEKIGUCHI, K., TANABE, H., YAMAMOTO, E., SORIMACHI, K., TAJIMA, E., WATANABE; H., SHIMIZU, H., Proc. Eurodisplay 84, Sept. 1984: A 210-288 Matrix LCD Controlled by Double Stage Diode Rings, pp. 141 ft, Paris; STROMER; M., Proc. Eurodisplay 84, Sept. 1984: Design of Thin Film Transistors for Matrix Addressing of Television Liquid P 14;055 Crystal Displays, pp. 145 ff., Paris]. With decreasing resistance, the contrast of an MLC display deteriorates. Since the specific resistance of the liquid-crystal mixture generally drops over the life of an MLC display owing to interaction with the inside surfaces of the display, a high (initial) resis-tance is very important for displays that have to have acceptable resistance values over a long operating period.

There is thus still a great demand for MLC displays having very high spe-attic resistance at the same time as a large working-temperature range, short response times and a low threshold voltage, with the aid of which various grey shades can be generated.

The disadvantage of the MLC-TN displays frequently used is due to their comparatively low contrast, the relatively high viewing-angle dependence and the difficulty of generating grey shades in these displays.

VA displays have significantly better viewing-angle dependencies and are therefore principally used for televisions and monitors. However, there continues to be a need to improve the response times here, in particular in view of use for televisions having frame rates (image change frequency/ repetition rates) of greater than 60 Hz. However, the properties, such as, for example, the low-temperature stability, must not be impaired at the same time.

The invention is based on the object of providing liquid-crystal mixtures, in particular for monitor and TV applications, based on the ECB effect or on the IPS or FFS effect, which do not have the disadvantages indicated above, or only do so to a reduced extent. In particular, it must be ensured for monitors arid televisions that they also work at extremely high and extremely low temperatures and at the same time have very short response times and at the same time have an improved reliability behaviour, in particular exhibit no or significantly reduced image sticking after long operating times.

Surprisingly, it is possible to improve the rotational viscosity values and thus the response times if polar compounds of the general formula I are P 141055 used in liquid-crystal mixtures, in particular in LC mixtures having negative dielectric anisotropy, preferably for VA and FFS displays.

The invention thus relates to a liquid-crystalline medium which comprises at least one compound of the formulaThe present invention likewise relates to compounds of formula I. The compounds of the formula I are covered by the generic formula in WO 02/055463 Al.

The mixtures according to the invention preferably exhibit very broad nematic phase ranges with clearing points za 70°C, preferably ?_ 75°C, in particular la 80C, very favourable values of the capacitive threshold, rela- tively high values of the holding ratio and at the same time very good low- temperature stabilities at -20°C and -30°C, as well as very low rotational viscosity values and short response times. The mixtures according to the invention are furthermore distinguished by the fact that, in addition to the improvement in the rotational viscosity 71, relatively high values of the elas-tic constants K33 for improving the response times can be observed. The use of the compounds of the formula I in LC mixtures, preferably having negative dielectric anisotropy, the ratio of rotational viscosity 71 and elastic constants K is reduced.

Some preferred embodiments of the mixtures according to the invention are indicated below.

In the compounds of the formula I, R1 and RI" preferably each, independently of one another, denote straight-chain alkoxy, in particular 00113, n-C2H50, n-OC3H7, n-OC4HG, n-0051-111, n-006H13, furthermore alkenyl, in particular CH2=CH2, CH2CH=CH2, CH2CH=CHCH3, CH2CFI=CHC2H3, branched aikoxy, in particular 0C3H6CH(CH3)2, and alkenyloxy, in particular OCH=CI-12, OCH2CH=C1-12, OCH2CH=CHCHS, OCH2CH=CHC2H5.

R1 and Rif particularly preferably each, independently of one another, denote straight-chain alkoxy having 1-6 C atoms, in particular methoxy, ethoxy, propoxy, butoxy, pentoxy, hexoxy.

P 14/055 -7 -L1 and L2 preferably both denote F Preferred compounds of the formula I are the compounds of the formulae 1-1 to I-10, alkyl L2 \") alkyl K 0 alkoxy 1-2 L2 alkyl-< \ 0) alkenyl

ON )

alkenyl \ 0 ( 0.>--alkenyl* \ / 1-3 1-4 1-5 alkenyl L2 >-alkoxy

O

alkoxy- alkoxy 1-6 P 14/055 -8 -alkyl 0-alkenyl 1-7 alkoxy O/ --0-alkenyl 1-8 in which alkyl and alkyl* each, independently of one another, denote a straight-chain alkyl radical having 1-6 C atoms, alkenyl and alkenyl* each, independently of one another, denote a straight-chain alkenyl radical having 2-6 C atoms, alkoxy and alkoxy* each, independently of one another, denote a straight-chain alkoxy radical having 1-6 C atoms, and L1 and L2 each, independently of one another, denote F or Cl.

In the compounds of the formulae 1-1 to 1-10, L1 and L2 preferably each, independently of one another, denote F or CI, in particular!: = L2 = F. Particular preference is given to the compounds of the formulae 1-2 and 1-6. In the compounds of the formulae 1-2 and 1-6, preferably L1 = L2 = F. -0-enyl* 1-9 alkenyl-----\ 0) C C3

_

alkenyl-0 ---0-alkenyl* The mixture according to the invention very particularly preferably com-prises at least one compound of the formulae VIA, E-2A, I-4A, I-6A and/or I-6B,

F I-1A \ / I-2A

alkoxy alkerlyr 1-4A 1-2A P 14/055 alkoxy

F

)--alkoxy* 1-6A I-6E3. O\ o) Q

alkoxy----Very particularly preferred mixtures comprise at least one compound of the formulae l-2A to 1-2.49 and 1-6.1 to l-628, 1-2.9 OC,H._

L

H 0 >------2.....

P 14/055 -10 -H3C 0C2H5 H0 0 3 \ Lk L2 L2 H3C H3C OC,H15 H3 Lk H3C ----003H7 L2 /--4 )---0C4H5 L2 H,C, (0 \ OCH3 1-2.2 I-2.3 1-2.4 1-2.5 1-2.6 1-2.7 1-2.8 L2 1-2.11 ( 0 0) OC 4H, 1-2.12 P 14/055 \-- N / \ Kt, 1-2 10 H5C2 \, 0 0 S L\ ,0 H7C3 \ / \ Lk\ 0(7,21-15 1-2.16 1-2.15 OCH3 1-2.14 0071-1.15 (O> OC,H7 H C, 7..... , 1-2.17 LI\ H5C2 0 0 \ 006H13 1-213 ------\ 4Z Z_1 6F-It700 K, 0 \ 0 9E

I

OE

EZZ-1 si-az00 9Z ZZ' Z-I ("H'30 03 6Z Z-1 91. " 1.[

OZZ-I /1930 0 >----0)=0-1-1

-I

6 VZ-I 8VZ-I 61-1 0 Hre c501P1 d 1-2,26 1-2.27 1-2,28 --0071-11, H9Ca \07 \ID/ H3 P 14/055 -13 -1-2.30 1-2.31 1-2.32 1-2.33 L2 o 1-2.36 Hi3C6---0 2H5 1-2.37 1-2,38 1-2.39 Li Zo / 6 0 4H9 1-2,40 -0 H,.

1-2.41 Hi3C6 0 006H13 P 14/055 1-111Cr, )----006H13 1-2.34

LS

HiiC5 H 1-2.35 1-2.42 1-2.43 OCH3

L

1-2.44 0 12-< \0 0C2115 1-2.45 1-2.49 P141055 -15 -1-2.46 Lk /L2 H15C 0 ( 0 005H." \ J Li' 0 L2 H15 C, 0 7. 0 1-2.47 1-2.48 1-6.1 OCH3 1-6 2 1-6.3 H3C0 1-6.4 1-6.5 1-6.6 1-6/ H3CO 0 0) 007H45 \ ..... 1-6.8

P 14/055 -16 -P 14/055 -17 -L2 H5C20 0

H 3 7

---0C,H, H5C20 CC H5C20 1-6,9 1-6.10 1-6.11 1-6A2 1-6.13 1-6.14 L' \ 7.

H5020---C OC7 Hi.5 L2 0C3H7 LC\ 117030----( 0, < 0)-0C4HE, \ ..... __/ 1-6 15 LI\ /0 \ H7C30 L" 5H11 1-6.16 1-6.17 H7C30 0C6H.,i3 1-6.18 1-6.19 1-6.23 {1/ H41050 _..... Hu C5

1-6.24 0061-113 P14/055 -18 -----0C5Hti H,C40 K 0 Lk 0 H,C40 0 007H15 1-6,20 1-621 1-6.22 P 14/055 -19 -Lk 0 L2 HnC50 \ 0 1-6.25 1-6.26 (Y \) / Hi3C60-0 \ / / \ 0 7-_, -..... ../ \___../0C iFi 1', 1-6.27 0071-115 1-6.28.

In the compounds 1-2.1 to 1-2.49 and 1-6,1 to 1-6.28, and L2 preferably both denote fluorine.

Preference is furthermore given to liquid-crystalline mixtures which corn-prise at least one compound selected from the group of the compounds of the formulae 1-1.1 to 1-1.28 and 1-6B.1 to 1-6B.3: Li L2 \ < / 1-13C (, ) 0,>--01-13 c2H5 1-1.2 1-1.3 1-1,4 H3C C61-11.3.

P141055 -20 -C51111 H3C 1-1.5 1-1.6 1-1.7 1-1.8 1-1,9 I-1.10 H5Ci 1-1.12 1-1,15 1-1.16 F 14/055 -21 -[LC -4 o 2 {,\_ jr-C71-115 /t..2 7) C3F17 1-1.13 1-1.14 ( 0 >--1-1.17 1-1.18 1-1.19 1-1.20 1-1.21 -C61113 1-1.22 C51-11.1 C611,3 1-1.23 1-1.24 1-1.25 1-1.26 P 14/055 -22 -o. /L2 Ll

P141055 -23 - 5,oN (L2 1-1.27 --------c H1aC6 C711,15 1-1.28 Lc0 1-6B.1 / H3CO-( 0 in which L1 and L2 each, independently of one another, have the meanings given in Claim 1. In the compounds of the formulae 1-1.1 to 1-1.28 and 1-6B.1 to 1-6B.3, preferably L1 = L2 = F. H5C2 I-6B.2

C 0 0 ----o -\\

1-6B,3, The compounds of the formula I can be prepared, for example, as described in WO 02/055463 Al. The compounds of the formula 1 are preferably prepared as follows: P 14/055 -24 -Very particularly preferred mixtures comprise at least one of the compounds mentioned below: F, H3C0 <> O -----( H3C0 0 H1 I-6A-1 0C2H5 I-6A-2 -0C3H7 I-6A-3 F0 I-6A-4 ( H3C0----0/ 0)----0C4H9 H300 0 2- (0_ I-6A-5

F H3CO

006H,3 I-6A-6

------

H5C20 0 0C2H5 I-6A-7 1-6A-10 C61113 1-6A-11 H. I-6A-13 I-6A-14 1-6A-15 / \ / \ H7C30-0 0 006H1 \ P 14/055 -25 -F,0,F ) ( H5C20 (0) 0)-0C3H7

F

I-6A-8 115C2 -----0C4H9 1-6A-9

F

_1' 3 7 1-6A-12 117C30-P 14;055 -26 -I-6A-16 H,C40 I-6A-17

F

) 0;1113 H9C40 Hi iC50--\\ 005H1.1

F

iC50-----0 006H13 I-6A-18 I-6A-19 I-6A-20 Hi 306 0 \i"- 006H13 I-6A-21 F I-6B-1 H3C0----( 0 P 14/055 -27 -I-6B-2 I-6B-3 H50,0 --F170,0 0) I-11,050

F

H

I-613-4 I-6B-5 I-613-6 The compounds of the formula I can be prepared, for example, as described in US 2005/0258399 or WO 02/055463 Al.

The compounds of the formula I are preferably prepared as follows: Scheme 1: R and R' each, independently of one another, denote straight-chain or branched alkyl or alkenyl P 14/055

OH A r

EtaSiCI base F OS:Etz,, for).. base

Pd cat.

N / i=uvr"

F \'' OSEt, F / F

1. CsF OMR.) 1. Fi1l.l, THF, -60°C 2. B(OCH3)", H+/H20. 2 3. FrOH, Mitsunobu

OR

-29 -Scheme 2: R1 and R2 each, independently of one another, denote raight-chain or branched alkyl or alkenyl 1/4j(\ID)---1 1) n-BuLi / THE, -78°C -> RT (3 h, RT) 2) -78GC NSF!, THF, 16 h -> RT 1) n-BuLi I THF, -78°C (2h) 2) Trimethw borate -78°C -> RT (1h, RT) 3) AcOH/H20 (1:1) + H202 RT P 141055

OH

jTIPSCI, midazol DMAP, RT (16 h) 1 1) n-E3uLi (3 eq.) (Til; -78°C -> -40°C (5 h, -40°C) 2) NSFI (3 eq.), THF -65 -> -50"C / 16 h -> RT r----")__C----z--\ 0; i F TBAE, THF, 5°C to RE (30 min)

OH

R1-Br, K2CO2, Et((;0)11,1e, 511 reflux \ /R1 / P14/055 -30 - 1) n-BuLi / THF, -78°C (2h stirring) 2) Trirnethoxy borate -78°C to RT (lb stirring at RT) 3) MOH/l-120 (1:1) + H202 at RT (stirring overnight)

H

R2-Br K2CO3 ethyl methyl ketone 51-1 refiux R1 Scheme 3: R1 and R2 each, independently of one another, denote straight-chain or branched alkyl or alkenyl (B) 1) n-Buti!THF, -78°C (2 h) 2) R-CHO, -78°C -> RT (1 h, RT) HO,R1 NaBH3CN, SF3 * EV: P 14%055 Scheme 4: R1 and R2 each, independently of one another; denote straight-chain or branched alkyl, alkoxy or alkenyl H0°- 1) (CF3502)20, base, CH.,C12 2) R1-ZnBr, Pd-DPPF-C12 THE 1) n-BuLi / THF, --78°C (2 h) 2) R-CHO, -78'C to RT (1 h, RT) 3) Na131-1,CN, BF, Et,C) R2 The present invention likewise relates to the compounds of the formula I-6B.

The media according to the invention preferably comprise one, two, three, four or more, preferably one, two or three, compounds of the formula I. The compounds of the formula I are preferably employed in the liquid-crystalline medium in amounts of 1, preferably 3% by weight, based on the mixture as a whole. Particular preference is given to liquid-crystalline media which comprise 1 40% by weight, very particularly preferably 2 -30% by weight, of one or more compounds of the formula I. Preferred embodiments of the liquid-crystalline medium according to the invention are indicated below: P 14/055 a) Liquid-crystalline medium which additionally comprises one or more compounds selected from the group of the compounds of the formulae IIA, IIB and IIC,

IIA P \

(0)C,H2,"1 IIB (0)C,,,H20,1 IIC in which R2A, 8213 and R25 each, independently of one another, denote H, an alkyl or alkenyl radical having up to 15 C atoms which is unsubstituted, monosubstituted by CN or CF3 or at least monosubstituted by halogen, where, in addition, one or more CH2 groups in these radicals may be replaced by -0-, -S-, 35, -CF2O-, -OCF2-, -0C-0-or -0-CO-in such a way that 0 atoms are not linked directly to one another, LI-4 each, independently of one another, denote F, CI, CF3 or CHF2, Z2 and - each, independently of one another, denote a single F' 14/055 -33 bond, -CH2C1-12-, -C1-1=CH-, -CF2O-, -0CF2-, -CH2 -OCH.-, -COO-, -CF4-, -CF=CF-, -CH=CHCH20-, p denotes 0, 1 or 2, denotes 0 or 1, and denotes 1 to 6.

In the compounds of the formulae NA and 1113, 72 may have identical or different meanings. In the compounds of the formula 116, Z2 and Z2' may have identical or different meanings.

In the compounds of the formulae NA, 11B and NC, R2A, R2B and R2c each preferably denote alkyl having 1-6 C atoms, in particular CH3, C21-15, n-C3H7, n-C41-19, n-051-1h.

In the compounds of the formulae IIA and IIB, L1, L.2, [3 and L4 preferably denote L1 = L2 = F and L3= L4 = F, furthermore L1 = F and L2 = CI, LI = Cl and L2 = F, L3 = F and L4 = Cl, L3 = Cl and L.4= F. 72 and Z2' in the formulae HA and IIB preferably each, independently of one another, denote a single bond, furthermore a -C2H4-bridge. 25 If, in the formula 112, Z2 = -C2H4-or -CH2O-, 72 is preferably a single bond or, if 72' = -C2H4-or -CH2O-, 72 is preferably a single bond. In the compounds of the formulae HA and 112, (0)CvH2\o preferably denotes OCvH2v+1, furthermore CvH2v+1. In the compounds of the for-mule 11C, (0)CvH2v41 preferably denotes CvH20-1. In the compounds of the formula 11C, L3 and L4 preferably each denote F. Preferred compounds of the formulae IIA, IIB and IIC are indicated below: P 14;055 -34 -alkyl IIA-1

F F

alkyl ( H Y 0 -0-alkyl* IIA-2 * IIA-3 alkyl 0 0-alkyl* Cl alkyl alkyl*

C IIA-4 HA-5

alkyl- IA-S

F

alkyl-<( H alkyl* alkyl Y-Ki 0-alkyi* IIA-7 IIA-8 alkyl CI \ F IIA-9 Kif " a 1 F 14/055 -35 CI, 1" 0)e- 0-alkyl* aky K H H 11A-10 /

F CI

\ IIA-11 alkyl-- I-1 H K\._ 0 alkyl* 0-alkyl* IIA-12 alkyl H c2114- F 11A-13 0 / alkyl* aikyl 11A-14 Cl. F 11A-15 \ \ H ialkyl* CI \ alkyl 11A-16 re2114-- alkyl* 11A-17 P 14/055 -36 -11A-19 11A-18 0-alkyl" 0-alkyl'

F \ 0

F C

alkyl H >-C2H4 \ / alkyl H \ alkyl-- -0CF2 0-alkyl 11A-20 alkyl-- 0 kyr 11A-21 F\ OCF2---/ 0 (0)alkyl' alkyl 11A-22 11A-23 pCH=CHCH20-7 0 (0)alkyl* alkyl ( H \ alkyl -If --7 H CF,0 -(0)a ky

CI F

0 c 01alkyr 11A-25 P14/055 -37 -alkyl- K H \CH2- 0) (0)alkyl* IIA-26 / aIkyCF ----alkyl* HA-27 alkyl H}-CH20 0) 0-alkyl* I IA-28

F

H

-

IIA-29 CH,O

F

H 0} (0)alkyl* HA-30 alkyl H OCH2 HA-31

F

alkenyl- 0 I IA-32 alkenyl- </F IIA-33 0-alkyl* P 14/055 -38 -I IA-34 CI F I IA -35 alkenyl H 0) 0-alkyl* F pi 0)----alkyl* I IA-36 IA-41 alkenyF-alkenyl ( H CL F alkyl* r---H 0 CI, alkenyl---(1-\-1 H 0 -alkyl* N.

CI

alkenyl K H 0 ----0-alkyl* 11A-37 alkenyl \-(721 0 alkyl* I IA-38 I IA-39 11A-40

F CI

a lken yl H\ H 0 11A-42 P 141055 -39 -

H /

IIA-46 (0)-alkyl* ) alkenyl IIA-44 IIA-45

F

r 0 --alkyl*

F

alkenyl (F l> C2H4 0-alkyl* -0-alkyr

F

CI

Hifi---e\tH HA-43 --(0)alkyl IIA-47 alkenyl

H /

F F HA-48 / alkenyl- H >--OCH2 \

F (

0C1-12 ailkenyi-(\ H HA-49

F

alkyl(0)-) HA-50 P 14/055 -40 -F 11A-51 Is alkyl(0) --0) (0)alkenyl* 11A-52

F

alken 0)---(0)alkenyl" alkyl HR-1 alkyl 0 0-alkyl* IIB-2 alkyl 11B-3 alkyl-- IIB-4 alkyl IIB-5 alkyl-\ \ 0-alkyl* 11B-6

F F \

alkylCH=CH--/ 0) \ IIB-7 (0)alkyi* P 14/055 alkyl-- H ji-C2H4 < 0 (O)alkyl.

alkyl-- / 0) OCF2 -(0)alkyl* 11B-f3 11B-9 alkyl ( -CF20 ( 0 (0)alkyl* 11B-0

N

F NF \ /

alkyl A\ -0[O-alkyl" 11B-11 F 118-12 -K1 alkyl ------c 0 \\)--<\ -alkyl* alkyl 0-alkyl* 11B-13 alkyl \ O -S\ 0 1 0-alkyl* Cl 11B-14 F F 11B-15 \ / / /----\ / \ alkenyl------\ H, 0 >-------\ 0 \-alkyl* / P 141055 alkenyl -0-alkyl* 11B-16 --alkyl* IIC-1, in which alkyl and alkyl* each, independently of one another, denote a straight-chain alkyl radical having 1-6 C atoms.

Particularly preferred mixtures according to the invention comprise one or more compounds of the formulae IIA-2, HA-8, IIA-14, 11A-26, 11-28,11A-33,11A-39, IIA-45, IIA-46,11A-47, IIA-50, IIB-2, 11B-11,11B-16 and IIC-1.

The proportion of compounds of the formulae HA and/or 11B in the mixture as a whole is preferably at least 20% by weight.

Particularly preferred media according to the invention comprise at least one compound of the formula 11C-1,

F F

alkyl 0-"\ \\_S in which alkyl and alkyl* have the meanings indicated above, prefera-bly in amounts of > 3% by weight, in particular > 5% by weight and particularly preferably 5-25%© by weight.

b) Liquid-crystalline medium which additionally comprises one or more compounds of the formula III, 10 15 20

III

F 14;055 -43 -in which R31 and R32 each, independently of one another, denote a straight -chain alkyl, alkoxy, alkenyl, alkoxyalkyl or alkoxy radical having up to 12 C atoms, and denotes (0 -(3-or ---c Z3 denotes a single bond, -CH2CH2-, -CH=CH-, -CF20-, -OCF2-, -CH2O-, -0 CH2-, -COO-, -000-, -CF4-, -CF=CF-.

Preferred compounds of the formula III are indicated below: CHL/ Ills H 0 > alkyl* alkyl -c H \ 0 -0-alkyl* / \_ IIlb H alkyl* Ilic alkyl -- lild in which alkyl and alkyl" each, independently of one another, denote a straight-chain alkyl radical having 1-6 C atoms.

The medium according to the invention preferably comprises at least one compound of the formula Illa and/or formula!lib.

P 141055 -44 -The proportion of compounds of the formula Ill in the mixture as a whole is preferably at least 5% by weight Liquid-crystalline medium additionally comprising a compound of the formula and / or and / or H H " / preferably in total amounts of 5% by weight, in particular > 109 by weight.

Preference is furthermore given to mixtures according to the invention comprising the compound (acronym: CC-3-V1) preferably in amounts of 2-15% by weight.

Preferred mixtures comprise 5-60% by weight, preferably 10-55% by weight, in particular 20-50% by weight, of the compound of the for-mula (acronym: CC-3-V) Preference is furthermore given to mixtures which comprise a com-pound of the formula (acronym: CC-3-V) P 14;055 -45 -/

H \

and a compound of the formula (acronym: CC-3-V1)

H

preferably in amounts of 10 -60% by weight.

d) Liquid-crystalline medium which additionally comprises one or more tetracyclic compounds of the formulae F K / --\ V-1 )---- /---H (0)Cw1-12,,+1

FF F F RI°

/ -----Cx 2x+1 V-2 V-3

F FF F

0/ \ H (0)CxH201 V-4

F F R1{ / °1 H \/

0 1 0 0 (0)C,H2,1 V-5 / \ P141055 -46 -

F F

0 / (0 ---(0);H2x,i V-6 (0)Cx1-12", V-7 (0)CH,". V-8 V-9 R10 in which R7-10 each, independently of one another, have one of the meanings indicated for R2A in Claim 3, and w and x each, independently of one another, denote 1 to 6.

Particular preference is given to mixtures comprising at least one compound of the formula V--9.

e) Liquid-crystalline medium which additionally comprises one or more compounds of the formulae Y-1 to Y-6, R14 Y-1 P 14/055 -47 -

F

R'5H OCH=CH2 Y-2 0,H2CH=CH2 Y-3

F F ( CH3

/ 0-C=CH2 Y-4

EF

-----

0 ---OCH=CH2 Y-5 R18 -

F <1

R19 --- 1 0) OCH2CH=CI- Y-6 ---/ in which R14-R19 each, independently of one another, denote an alkyl or alkoxy radical having 1-6 C atoms; z and rn each, independently of one another, denote 1-6; x denotes 0, 1, 2 or 3.

The medium according to the invention particularly preferably comprises one or more compounds of the formulae Y-1 to Y-6, preferably in amounts of 5% by weight.

Liquid-crystalline medium additionally comprising one or more fluori-nated terphenyls of the formulae T-1 to 1-21, R 0 T-1 T-2 (0)Cm1-12,,"/ P 14/055 -48 -

F F

}-----ka \ (0)CmF12",,,1 T-3

F F F

)- )-(0)Cmh2 T-7

F F F F F R 0

)Crni12,41

R F,F

(0)Cm1-12"÷/

F F /

I. (0)C,1-12",

R T-8 T-9 T-10

R ( 0 \ \ )CmH2n1+1 (0)CmH2rwri (0)-CmHanti T-4 T-5 1-6 (0)Cm1-12".1 T-16 P 14/055 -49 -F CF3 0 (/ 0 (0)CmH2n)+1 F CF, > 0(0)C111" H2,+,

R T-11 T-12

F CHF_

R) (0)0,1H2rni 1-13

F F

R --- 0 > -(0 (0)0H21 T-14 (0)C"H2m.i 1-15

F F

F F F F r (I R ^\

\ 0 /- 0, (0)Cini-t2m.0 T-17

F

F F

0 (0)C,H2",i T-18

F F

R (#:\ (0)C,H2,, 1-19 P 141055 in which R denotes a straight-chain alkyl or alkoxy radical having 1-7 C atoms, and m = 0, 1, 2, 3, 4, 5 or 6 and n denotes 0, 1, 2, 3 or 4.

R preferably denotes methyl, ethyl, propyl, butyl, pentyl, hexyl, methoxy, ethoxy, propoxy, butoxy, pentoxy.

The medium according to the invention preferably comprises the ter-phenyls of the formulae T-1 to T-21 in amounts of 2-30% by weight, in particular 5-20% by weight.

Particular preference is given to compounds of the formulae T-1 T-2, 1-4, T-20 and T--21. In these compounds, R preferably denotes alkyl, furthermore alkoxy, each having 1-5 C atoms. In the compounds of the formula T-20, R preferably denotes alkyl or alkenyl, in particular alkyl. In the compound of the formula T-21, R preferably denotes alkyl, The terphenyls are preferably employed in the mixtures according to the invention if the An value of the mixture is to be L-0.1. Preferred mixtures comprise 2-20% by weight of one or more terphenyl compounds selected from the group of the compounds T-1 to 1-21.

Liquid-crystalline medium additionally comprising one or more bi-phenyls of the formulae B-1 to B-3, T-20 CmH2m+1 R----( 0)-----<( 0 R--K\O /I> H2m4 T-21 rn -50 -

F

P 14/055 alkyl 4 0)-<, 0 alkyl* B-1 --alkenyl' B-2 ^ alkenyl ( 0 ^ \O alkenyl* B-3 in which alkyl and alkyl* each, independently of one another, denote a straight-chain alkyl radical having 1-6 C atoms, and alkenyl and alkenyl* each, independently of one another, denote a straight-chain alkenyl radical having 2-6 C atoms.

The proportion of the biphenyls of the formulae B- B-3 in the mix-ture as a whole is preferably at least 3% by weight, in particular 5% by weight.

Of the compounds of the formulae B-1 to B-3, the compounds of the formula B-2 are particularly preferred.

Particularly preferred biphenyls are B-la 0 Ca % B-2a ( 0) (1/ 0> B-21) P 14/055 -'132 -RIC --- 0 --- - B-2c, in which alkyl* denotes an alkyl radical having 1-6 C atoms. The medium according to the invention particularly preferably comprises one or more compounds of the formulae B-la and/or B-2c.

h) Liquid-crystalline medium comprising at east one compound of he formulae Z-1 to Z-7, R < , F2 kyl 0)alkyl

R 1-1 Z-2 Z-3

F F

P

OCI: / 0 r---(0)alkyl \\J / \)----CF2 0-- y (0)alkyl :30 )----CF20 0) (0)alkyl / Z-6

F F

R H/ -CH20 / \ OCH (0)alkyl Th \ Z7 Z-4 1-5 P 14/055 -53 -in which R and alkyl have the meanings indicated above.

i) Liquid-crystalline medium additionally comprising at least one com-pound of the formulae 0-1 to 0-18, Th 0-1 H 1-17----CF-120 H 0 H 2 0-2 R =CI H H 1±)--000 10 / 0-3 0-4 \-

H 0-5

H >--R2 0-6 0-7 0-8 R2 0-9 F 141055 -54 - 0-10 H 0 *

H 0-11 0-12

Ft \ R2 (--H>-(1-0----\) (C: 0-13 0-14 H --R2

H

F H 0 \ / H) Rd

-t 0-15 0-16 0-17 0-18

in which R1 and R2 have the meanings indicated for R2A. R1 and R2 preferably each, independently of one another, denote straight-chain alkyl or alkenyl.

P 10055 -55 -Preferred media comprise one or more compounds of the formulae 0-1, 0-3, 0-4, 0-6, 0-7, 0-10, 0-11, 0-12, 0-14, 0-15, 0-16 and/or 0-17.

Mixtures according to the invention very particularly preferably comprise the compounds of the formula 0-10, 0-12, 0-16 and/or 0-17, in particular in amounts of 5-30%.

Preferred compounds of the formulae 0-10 and 0-17 are below: ncUca led H7C3 H, 0). CE-1,3 0-10a H 0-10b H 0-- H H 0-17a 2 \ \ 3 7 H5C2-----H H 0-17b H7Ci- 0-17c H 20-\ H 0-17d /C4HC The medium according to the invention particularly preferably comprises the tricyclic compounds of the formula 0-10a and/or of the formula 0-10b in combination with one or more bicyclic compounds of the formulae 0-17a to 0-17d, The total proportion of the compounds P 14/055 -56 -of the formulae 0-10a and/or 0-10b in combination with one or more compounds selected from the bicyclic compounds of the formulae 0-17a to 0-17d is 5-40%, very particularly preferably 15-35%.

Very particularly preferred mixtures comprise compounds 0-10a and 0-17a: H7 3 z -CI H 0 CH3 0-10a \ H 0-17a.

Compounds 0-10a and 0-17a are preferably present in the mixture in a concentration of 15-35%, particularly preferably 15-25% and especially preferably 18-22%, based on the mixture as a whole.

Very particularly preferred mixtures comprise the compounds 0-10b and 0-17a: /--c3H7 0-10t H5C, H H 0-17a.

The compounds 0-10b and 0-17a are preferably present in the mixture in a concentration of 15-35%, particularly preferably 15-25% and especially preferably 18-22%, based on the mixture as a whole.

Very particularly preferred mixtures comprise the following three compounds: H \fr, -0 "-CH, 0-10a F 14/055 0-10b 0-17a.

H, C------( The compounds 0-10a, 0-10b and 0-17a are preferably present in the mixture in a concentration of 15-35%, particularly preferably 15- 25% and especially preferably 18-22%, based on the mixture as a whole.

Preferred mixtures comprise at least one compound selected frorn the group of the compounds RI H r-7 H - 0-6 H 0-7 H -</\/ H)P-R2 0-17, in which R1 and R2 have the meanings indicated above. Preferably in the compounds 0-6, 0-7 and 0-17, R1 denotes alkyl or alkenyl hay-ing 1-6 or 2-6 C atoms respectively and R2 denotes alkenyl having 2-6 C atoms.

Preferred mixtures comprise at least one compound of the formulae 0-6a, O-6b, 0-7a, 0-7b, 0-17e, 0-171, 0-17g and 0-17h: P 14/055 -58 -0-6a 0-6b 0-7a 0-7b 0-17e 0-17f 0-17g H * H

H

alkyl--\ H c)- alkyl---1-1 --/7 \

H H

r". Th' alkyV H > H Ym alky 0-17h in which alkyl denotes an alkyl radical having 1-6 C atoms.

P 14/055 -59 - The compounds of the formulae 0-6, 0-7 and O-17e-h are preferably present in the mixtures according to the invention in amounts of 1 - 40% by weight, preferably 2 -35% by weight and very particularly preferably 2 -30% by weight.

Preferred liquid-crystalline media according to the invention comprise one or more substances which contain a tetrahydronaphthyl or naph-thyl unit, such as, for example, the compounds of the formulae N-1 to N-5, N -1 R2" N-2 / < H Z

F / 7-R2N \ H N-5

P 14/055 in which R114 and R2N each, independently of one another, have the meanings indicated for R2A, preferably denote straight-chain alkyl, straight-chain aikoxy or straight-chain alkenyl, and Z1 and Z2 each, independently of one another, denote -C2H4-, -CF1=C1-1-, -(CH2)4-, -(CH2)30-, -0(CH2) CH=CHCH2CH2-, -CH2CH2CH=CH-, -CH2O-, -OCH2-, -00 0-, -000-, -C2F4-, -CF=CF-, -CF=CH-, -CH=CF-, -CF2O-, -OCF2-, -CF12-or a single bond.

k) Preferred mixtures comprise one or more compounds selected from the group of the difluorodibenzochroman compounds of the formula BC, chromans of the formula CR, fluorinated phenanthrenes of the formulae PH-1 and PH-2, fluorinated dibenzofurans of the formula BF-1 and BF-2, RC R2 BC PH-1 P H-2 P 14/055 -61 -BF-1 2 B F-2 in which p'Br REi2, R0R.1, RcR2, R1, R2 each, independently of one another, have the meaning of R2A. c is 1 or 2. R1 and R2 preferably, independently of one another, denote alkyl or alkoxy having 1 to 6 C atoms.

The mixtures according to the invention preferably comprise the corn-pounds of the formulae BC, CR, PH-1, PH-2 and/or BF in amounts of 3 to 20% by weight, in particular in amounts of 3 to 15% by weight.

Particularly preferred compounds of the formulae BC and CR are the compounds BC-1 to BC-7 and CR-1 to CR-5, BC-1 alkyl 7----0 F alkyl alkyl-0 \,0 0

J J

aky1-0.---\ 0 - 17, / ,-0 F ) BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 CR-1 CR-2 P 14/055 alkyl-0-alkyl* alkenyl

F

alkenyl* alkyl --alkenyl alkyl alkenyl -62 -alkyl ( FT> alkyl* alkyl*

F

alkyF -

H CR-3

P 141055

F

_10 --<\ 0 alkyl' alkenyl II* 10 -63

F

0 -e 0

H

alkyl* CR-4 CR-5 in which alkyl and alkyl* each, independently of one another, denote a straight-chain alkyl radical having 1-6 C atoms, and alkenyl and alkenyl* each, independently of one another, denote a straight-chain alkenyi radical having 2-6 C atoms.

Very particular preference is given to mixtures comprising one, two or three compounds of the formula BC-2, BF-1 and/or BF-2.

I) Preferred mixtures comprise one or more indane compounds of the formula In, H In in which R11, R12, P 14/055 -64 R13 each, independently of one another, denote a straight-chain alkyl, alkoxy, alkoxyalkyl or alkenyl radical having 1-6 C atoms, R12 and R'3 additionally denote halogen, preferably F,

-CD

denotes _fr-\ denotes 0, 1 or 2, Preferred compounds of the formula In are the compounds of the formulae In-1 to In-16 indicated below:

HI Rh H

A

F F In-1 I n-2 In-3

P 14/055 -65 -H 0 F F F,CH3 In-4 In-5 Rit in-6 In-7 I n-8 "c1-13

F F C2 H5 \Cy)

F ILL C2 H5

F F I n-9 In-10 CHs

Rit/ H 0

F F in-11

P 14/055 -66 -o I C3H7-n CH3 0 F

- I

C2H. 0 F

H H In-13 In-14 In-15

In-16.

Particular preference is given to the compounds of the formulae In-1, In-2, In-3 and In-4.

The compounds of the formula In and the sub-formulae In-1 to In-16 are preferably employed in the mixtures according to the invention in concentrations a 5% by weight, in particular 5 -30% by weight and very particularly preferably 5 -25% by weight.

Preferred mixtures additionally comprise one or more compounds of the formulae L-1 to L-11, L-1 R- \_0 L-6 P 14/055 -67 -

R---

(0)-alkyl

R

CI

0 -(0)-alkyl F

R / \

0)-alkyl / L-7 L-8 L-9 L-11, L-3

LA L-5

P 14/055 -68 -in which R, R1 and R2 each, independently of one another, have the meanings indicated for R2A in Claim 5, and alkyl denotes an alkyl radical having 1-6 C atoms. s denotes 1 or 2.

Particular preference is given to the compounds of the formulae L-1 and L-4, in particular L4.

The compounds of the formulae 1,1 to L-11 are preferably employed in concentrations of 5 -50% by weight, in particular 5 40% by weight and very particularly preferably 10 -40% by weight.

Particularly preferred mixture concepts are indicated below: (the acronyms used are explained in Table A. n and m here each, independently of one another, denote 1-15, preferably 1-6).

The mixtures according to the invention preferably comprise -one or more compounds of the formula I in which _I F and RI = R1' = alkoxy; -CPY-n-Om, in particular CPY-2-02, CPY-3-02 and/or CPY-5-02, pref-erably in concentrations > 5%, in particular 10-30%, based on the mixture as a whole, and/or CY-n-Om, preferably CY-3-02, CY-3-04, CY-5-02 and/or CY-5-04, pref-erably in concentrations > 5%, in particular 15-50%, based on the mixture as a whole, and/or P 14/055 -CCY-n-Om, preferably CCY-4-02, CCY-3-02, CCY-3-03, CCY-3-01 and/or CCY-5-02, preferably in concentrations > 5%, in particular 10-30%, based on the mixture as a whole, and/or -CLY-n-Om, preferably CLY-2-04, CLY-3-02 and/or CLY-3-03, preferably in concentrations > 5%, in particular 10-30%, based on the mixture as a whole, and/or -CK-n-F, preferably CK-3-F, CK-4-F and/or CK-5-F, preferably > 5%, in particular 5-25%, based on the mixture as a whole.

Preference is furthermore given to mixtures according to the invention which comprise the following mixture concepts: (n and m each, independently of one another, denote 1-6.) - CPY-n-Om and CY-n-Om, preferably in concentrations of 10-80%, based on the mixture as a whole.

and/or - CPY-n-Om and CK-n-F, preferably in concentrations of 10-70%, based on the mixture as a whole, and/or - CPY-n-Om and PY-n-Om, preferably CPY-2-02 and/or CPY-3-02 and PY-3-02, preferably in concentrations of 10 -45%, based on the mixture as a whole, and/or P 14/055 CPY-n-Om and CLY-n-Om, preferably in concentrations of 10-80%, based on the mixture as a whole, and/or CCVC-n-V, preferably CCVC-3-V, preferably in concentrations of 2 10%, based on the mixture as a whole, and/or -CCC-n-V, preferably CCC-2-V and/or CCC-3-V, preferably in concentrations of 2 10%, based on the mixture as a whole, and/or CC-V-V, preferably in concentrations of 5 - based on the mixture as a whole.

The invention furthermore relates to an electro-optical display having active-matrix addressing based on the dem ECS, VA, PS-VA, PA-VA, IPS, PS-IPS, FFS or PS-FFS effect, characterised in that it contains, as dielectric, a liquid-crystalline medium according to one or more of Claims 1 to 15.

The liquid-crystalline medium according to the invention preferably has a nematic phase from -20°C to:ta. 70°C, particularly preferably from r_c -30°C to 80°C, very particularly preferably from s: -40°C to L 90°C The expression "have a nematic phase here means on the one hand that no smectic phase and no crystallisation are observed at low temperatures at the corresponding temperature and on the other hand that clearing still does not occur on heating from the nematic phase. The investigation at low temperatures is carried out in a flow viscometer at the corresponding temperature and checked by storage in test cells having a layer thickness cor-responding to the electro-optical use for at least 100 hours. If the storage stability at a temperature of -20°C in a corresponding test cell is 1000 h or P 14/055 -71 - more, the medium is referred to as stable at this temperature. At temperatures of -30°C and -40°C, the corresponding times are 500 h and 250 h respectively. At high temperatures, the clearing point is measured by con-ventional methods in capillaries.

The liquid-crystal mixture preferably has a nernatic phase range of at least 60 K and a flow viscosity V20 of at most 30 mm" * al at 20°C.

The values of the birefringence An in the liquid-crystal mixture are gener-ally between 0,07 and 0:16, preferably between 0.08 and 0.13.

The liquid-crystal mixture according to the invention has a As of -0.5 to -8.0, in particular -2.5 to -6.0, where As denotes the dielectric anisotropy.

The rotational viscosity yi at 20°C is preferably s: 150 mPa*s, in particu-lar a: 120 mPa*s.

The liquid-crystal media according to the invention have relatively low values for the threshold voltage (V0). They are preferably in the range from 1.7 V to 3.0 V, particularly preferably 5:12,5 V and very particularly prefera-bly s 2.3 V. For the present invention, the term "threshold voltage" relates to the capacitive threshold (Vo), also known as the Freedericks threshold, unless ex-plicitly indicated °then:vise.

In addition, the liquid-crystal media according to the invention have high values for the voltage holding ratio in liquid-crystal cells.

In general, liquid-crystal media having a low addressing voltage or thresh-old voltage exhibit a lower voltage holding ratio than those having a higher addressing voltage or threshold voltage and vice versa.

For the present invention, the term 'dielectrically positive compounds" denotes compounds having a As > 1.5, the term "dielectrically neutral corn-pounds" denotes those having -1.5 a As S' 1.5 and the term "dielectrically P ^*4!055 -72 -negative compounds" denotes those having Ac < -1.5, The dielectric anisotropy of the compounds is determined here by dissolving 10% of the compounds in a liquid-crystalline host and determining the capacitance of the resultant mixture in at least one test cell in each case having a layer thickness of 20 pm with horneotropic and with homogeneous surface alignment at 1 kit The measurement voltage is typically 0,5 V to 1.0 V, but is always lower than the capacitive threshold of the respective liquid-crystal mixture investigated.

All temperature values indicated for the present invention are in C. The mixtures according to the invention are suitable for all VA-TFT applications, such as, for example, VAN, WA; (S)-PVA, ASV, PSA (polymer sustained VA) and PS-VA (polymer stabilized VA). They are furthermore suitable for IPS (in-plane switching) and FFS (fringe field switching) applications having negative Ac.

The nematic liquid-crystal mixtures in the displays according to the inven- Lion generally comprise two components A and B, which themselves con-sist of one or more individual compounds.

Component A has significantly negative dielectric anisotropy and gives the nematic phase a dielectric anisotropy of -0.5. Besides one or more corn- pounds of the formula 1, it preferably comprises the compounds of the for-mulae HA, 11B and/or 11C, furthermore one or more compounds of the formula 0-17, The proportion of component A is preferably between 45 and 100%, in par-ticular between 60 and 100%.

For component A, one (or more) individual compound(s) which has (have) a value of As cs: -0.8 is (ate) preferably selected. This value must be more negative, the smaller the proportion A in the mixture as a whole.

Component B has pronounced nernatogeneity and a flow viscosity of not greater than 30 mm2. s-1, preferably not greater than 25 rnm2-s-1, at 20°C.

P 14:055 73 -A multiplicity of suitable materials is known to the person skilled in the art from the literature. Particular preference is given to compounds of the formula 0-17.

Particularly preferred individual compounds in component B are extremely low-viscosity nematic liquid crystals having a flow viscosity of not greater than 18 mm2 s preferably not greater than 12 mm2 -s-1, at 20'C, Component B is monotropically or enantiotropically nematic, has no smectic phases and is able to prevent the occurrence of smectic phases down to very low temperatures in liquid-crystal mixtures. For example, if various materials of high nematogeneity are added to a smectic liquid-crystal mix--ture, the nematogeneity of these materials can be compared through the degree of suppression of smectic phases that is achieved.

The mixture may optionally also comprise a component C, comprising compounds having a dielectric anisotropy of AE ?,1.5. These so-called posi-tive compounds are generally present in a mixture of negative dielectric anisotropy in amounts of < 20% by weight, based on the mixture as a whole.

If the mixture according to the invention comprises one or more corn--pounds having a dielectric anisotropy of A2 = 1.5, these are preferably one or more compounds selected from the group of the compounds of the formulae P-1 to P-4, R 0 P-1 P-2 P 14/055 in which R denotes straight-chain alkyl, alkoxy or alkenyl, each having 1 or 2 to 6 C atoms respectively, and X denotes F, Cl, CFa, OCF3, OCHFCF3 or CCF2CHFCE3, preferably F or OCF3.

The compounds of the formulae P-1 to P-4 are preferably employed in the mixtures according to the invention in concentrations of 2 -15%, in particular 2 -10%.

Particular preference is given to the compound of the formula

F Kr 0 /Th

-74 -

F P-3

F

/ \ R H C1/4 / P-4 which is preferably employed in the mixtures according to the invention in amounts of 2 -15%.

In addition, these liquid-crystal phases may also comprise more than 18 components, preferably 18 to 25 components.

P 1-1/055 Besides one or more compounds of the formula I, the phases preferably comprise 4 to 15, in particular 5 to 12, and particularly preferably < 10, compounds of the formulae HA, IIB and/or IIC and optionally one or more compounds of the formula 0-17..

Besides compounds of the formula 1 and the compounds of the formulae IIA, 118 and/or IIC and optionally 0-17, other constituents may also be present, for example in an amount of up to 45% of the mixture as a whole, but preferably up to 35%, in particular up to 10%.

The other constituents are preferably selected from nematic or nematogenic substances, in particular known substances, from the classes of the azoxybenzenes, benzylideneanilines, biphenyls, terphenyls, phenyl or a cyclohexyl benzoates, phenyl or cyclohexyl cyclohexanecarboxylates, phenylcyclohexanes, cyclohexylbiphenyls, cyclohexylcyclohexanes, cyclohexylnaphthalenes, 1,4-biscyclohexylbiphenyls or cyclohexylpyrimidines, phenyl-or cyclohexyldioxanes, optionally halogenated stilbenes, benzyl phenyl ethers, tolans and substituted cinnamic acid esters.

The most important compounds which are suitable as constituents of liquid-crystal phases of this type can be characterised by the formula IV R20-L-G-E-R21 IV in which L and E each denote a carbo-or heterocyclic ring system from the group formed by 1,4-disubstituted benzene and cyclohexane rings, 4,4'-disubstituted biphenyl, phenylcyclohexane and cyclohexylcyclohexane systems, 2,5-disubstituted pyrimidine and 1,3-dioxane rings, 2,0-disubsti- tuted naphthalene, di-and tetrahydronaphthalene, quinazoline and tetra-hydroquinazoline, G denotes -CH=CH--N(0)=N-CH=CQ--CH=N(0)- -CH2-CH2- -CO-0--CH2-0--00-,S-P 14:055 -76 - -CH=N- -COO-Phe-000- -CF20- -CF=CF-- -0CF2--0CH2--(CH2)4--(CH2)30-or a C-C single bond, Q denotes halogen, preferably chlorine, or -CN, and R21' and R21 each denote alkyl, alkenyl, alkoxy, alkoxyalkyl or alkoxycarbonyloxy having up to 18, preferably up to 8, carbon atoms, or one of these radicals alternatively denotes CN, NC, NO2, NCS, CF3, SF5, OCE-73, F, CI or Br.

In most of these compounds, R2° and R21 are different from one another, one of these radicals usually being an alkyl or alkoxy group. Other variants of the proposed substituents are also common. Many such substances or also mixtures thereof are commercially available. All these substances can he prepared by methods known from the literature.

It goes without saying for the person skilled in the art that the VA, IPS or FFS mixture according to the invention may also comprise compounds in which, for example, H, N, 0, Cl and F have been replaced by the corresponding isotopes.

Polymerisable compounds, so-called reactive mesogens (RMs), for exam- as disclosed in U.S. 6,861,107, may furthermore be added to the mix-tures according to the invention in concentrations of preferably 0.01 -5% by weight, particularly preferably 0.2 -2% by weight, based on the mixture. These mixtures may optionally also comprise an initiator, as described, for example, in U.S. 6,781,665. The initiator, for example Irganox-1076 from BASF, is preferably added to the mixture comprising polymerisable com- pounds in amounts of 0-1%. Mixtures of this type can be used for so-called polymer-stabilised VA modes (PS-VA) or PSA (polymer sustained VA), in which polymerisation of the reactive mesogens is intended to take place in the liquid-crystalline mixture. The prerequisite for this is that the liquid-crystal mixture itself does not comprise any polymerisable components.

P 14/055 -77 -In a preferred embodiment of the invention, the polymer.sable compounds are selected from the compounds of the formula M R"^'-Am1-(ZYLAm2 _RN% M in which the individual radicals have the following meaning: RMa and Rrdit) each, independently of one another, denote P, P-Sp-, H, halogen, SFs, NO2, an alkyl, alkenyl or alkynyl group, where at least one of the radicals RMa and Rwlb preferably denotes or contains a group P or P-Sp-, P denotes a polymerisable group, Sp denotes a spacer group or a single bond, gill and AM2 each, independently of one another, denote an aromatic, heteroaromatic, alicyclic or heterocyclic group, preferably having 4 to 25 ring atoms, preferably C atoms, which also includes or may contain annellated rings, and which may optionally be mono-or polysubstituted by L, L denotes P, P-Sp-, OH, CH2OH, F, CI, Br, I, -ON, -NO2, -NCO, -NCS, -OCN, -SCN, -C(=0)N(Rx)2, -C(=0)Y1, -C(=0)Rx, -N(R12, optionally substituted silyl, optionally substituted aryl having 6 to 20 C atoms, or straight-chain or branched alkyl, aikoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 25 C atoms, in which, in addi-tion, one or more H atoms may be replaced by F, CI, P or P-Sp-, preferably P, P-Sp-, I-1, OH, CH2OH, halogen, SF5, NO2, an alkyl, alkenyl or alkynyl group, denotes halogen, denotes -0-, -S-, -CO-, -00-0-, -000-, -0-00-0-, -OCH2-, -CH20-, -SCH2-, -CH2S-, -CF20-, -CF2S-, -SCF2-, P 141055 -78 - -(CH2)111-, -CF2CH2-, -CH2CF2-, -(CF2)n1-, -CF=CF-, -CH=C1-4-, -COO-, -000-CH=CH-, CR°R°° or a single bond, R° and Rc° each, independently of one another, denote H or alkyl having 1 to 12 C atoms, denotes P, P-Sp-, H, halogen, straight-chain, branched or cyclic alkyl having 1 to 25 C atoms, in which, in addition, one or more non-adjacent CH2 groups may be replaced by -0-, -8-, -CO-, -00-0-, -0-CO-, -0-CO-O-in such a way that 0 and/or S atoms are not linked directly to one another, and in which, in addition, one or more H atoms may be replaced by F, CI, P or P-Sp-, an optionally substituted aryl or aryloxy group having 6 to 40 C atoms, or an optionally substituted heteroaryl or heteroaryloxy group having 2 to 40 C atoms, ml denotes 0, 1, 2, 3 or 4 and n1 denotes 1, 2, 3 or 4, where at least one, preferably one, two or three, particularly preferably one or two, from the group RMa, Rmb and the sub-stituents L present denotes a group P or P-Sp-or contains at least one group P or P-Sp-.

Particularly preferred compounds of the formula M are those in which RMa and Rmil each, independently of one another, denote P, P-Sp-, H, F. CI, Br, I, -CN, -NO2, -NCO, -NCS, -OCN, -SCN, SF5 or straight-chain or branched alkyl having 1 to 25 C atoms, in which, in addition, one or more non-adjacent CI-12 groups may each be replaced, independently of one another, by -C(Fici)=C(Rin-, -N(R°°)-, -0-, -5-, -CO-, -C0-O-, -0-CO--0-00-0-in such a way that 0 and/or S atoms are not linked directly to one another, and in which, in addition, one P 14/055 -79 -or more H atoms may be replaced by F, CI, Br, I, CN, P or P-Sp-, where at least one of the radicals Rrwm and RMb preferably denotes or contains a group P or P-Sp-, AM1 and AM2 each, independently of one another, denote 1,4-phenylene, naphthalene-1,4-diyl, naphthalene-2,6-diyl, phenanthrene2,7-diyl, anthracene-2,7-diyl, fluorene-2,7-diyl, coumarine, flavone, where, in addition, one or more CH groups in these groups may be replaced by N, cyclohexane-1,4-diyl, in which, in addition, one or more non-adjacent CH2 groups may be replaced by 0 and/or 8, 1,4-cyclohexenyiene, bicyclo[1,1.1]pentane-1,3-diyi, bicyclo[2.2.2]octane-1,4-diyl, spiro13,31heptane-2,6-diyi, piperidine-1,4-diyl, decahydronaphthalene-2,6-diyl, 1,2,3,4-tetrahydronaphthalene-2,6-diyl, indane-2,5-diyl or octahydro-4,7-methanoindane-2,5-diyl, where all these groups may be unsubstituted or mono-or polysubstituted by L, L denotes P, P-Sp-, OH, CH2OH, F, CI, Br, I, -CN, -NO2, -NCO, -NCS, -OCN, -SCN, -C(in-O)N(R/2, -C(=0)Y1, -C(=O)RK, -N(Rx)2, optionally substituted silyl, optionally substituted aryl having 6 to 20 C atoms, or straight-chain or branched alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 25 C atoms, in which, in addi-tion, one or more H atoms may be replaced by F, CI, P or P-Sp-, P denotes a polymerisable group, denotes halogen, Rx denotes P, FL8p-, H, halogen, straight-chain, branched or cyclic alkyl having 1 to 25 C atoms, in which, in addition, one or more non-adjacent CH2 groups may be replaced by -0-, -S-, -CO-, -C0-O-, -0-00-, -0-00-0-in such a way that 0 and/or S atoms are not linked directly to one another, and in P 14%055 which, in addition, one or more atoms may be replaced by F, CI, P or P--Sp-, an optionally substituted aryl or aryloxy group having 6 to 40 C atoms, or an optionally substituted heteroaryl or heteroaryloxy group having 2 to 40 C atoms.

Very particular preference is given to compounds of the formula M in which one of Rma and RMb or both denote P or P-Sp-.

Suitable and preferred RMs or monomers or comonomers for use in liquid-crystalline media and PS-VA displays or PSA displays according to the invention are selected, for example from the following formulae: Sp-P2 M1 ILL)r sp2.4,2 M2 P1-Spi-----/? )-{L), Sp-P2 -Sp2-P2 sp2_p2 1(14 ), M4 M5 M6 VI-V4 S-d

L Hi

SZ

zd-zds _ zd-zds J1s--1.d OZ 0£ d-ds z \k", j(13.j(1 ds-j.d 1( zd-zd S-id -1,8 -cl-ds__ z d t d S-1 d

OL

E I-L. 6V\1

cUiPF d P 141055 -82 -PLSpL

S

p2-F,2 0 0 2 2 Sp -P Sp1-P1 -Sp 1 1 424)2 i I I 2 2

-P

I n,

P1 -o p H i i :- -,-.... "..--::z.,... M15 M16 M18 M19 M17 M20

P 14/055 M21 M22 -83 p2_p2 ih (L),, "XaSp3-P3 X2--Sp2-Pa PSpiXl X3 Sp3-P3 M23 (L), _(7 1 I S\, ( czny (L), I - p2 P3 (L), L), \;. \

P M24 M25 M26 p2 -...

P 14/055 -84 -sp2-102 P-Sp Sp2-P2 P1 p 2 P3 M27 M28 M29 M30 M32 M 34 P 141055 -85 -Pi- Sp2-P2 M35 -Sp2-P2 P -Sp-----X \ M39 P1-Spi....

-0 NO-Sp1.-P1 M40 PI-Sp1-0' 'O-8p1-P1 p1.sp1-0 P1-p1 < _sp2, p2 Sp1-P1 sp-4 p2 Sp'-P Spi-P2 M36 M37 M38 P"-Sp -0 Pi-Spl-d aspi P1 M41 -Sp1-P1 M42 P1.-Sp1-0 "5" CD-Sp1-P1 a.spl-P1 M43 FA-Sp'O'' Pl-Sptd P 14/055 -86 -O-Sp P1 P1-41-0' P.-Sp -0 M44 in which the individual radicals have the following meanings: P1,P2 and P3 each, identically or differently, denote a polymerisable group, preferably having one of the meanings indicated above and below for P, particularly preferably an acrylate, methacrylate, fluoroacrylate, oxetane, vinyloxy or epoxy group, Sp1, Sp2 and Spa each, independently of one another, denote a single bond or a spacer group, preferably having one of the meanings indicated above and below for Spa, and particularly preferably -(CH2)Fe, -(CH2)ra-0-, -(CH2)0-00-0--or -(CH2)0-O CO-O-, in which p1 is an integer from 1 to 12, and where in the last-mentioned groups the linking to the adjacent ring takes place via the 0 atom, where one or more of the radicals P1-Sp1-, P2-Sp2-and P3-Sp3-may also denote Raa, with the proviso that at least one of the radicals P'-Spla P2-Sp2-and P3-Sp3-present does not denote Raa, Raa denotes H, F, CI, CN or straight-chain or branched alkyl hav-ing 1 to 25 C atoms, in which, in addition, one or more nonadjacent CH2 groups may each be replaced, independently of one another, by C(R1)=C(R9-, -N(R°)-, -0-, -5-, -CO-, -00-0-, -0-00-, -0-00-0-in such a way that 0 and/or S atoms are not linked directly to one another, and in which, in addition, one or more H atoms may be replaced by F, CI, CN or P1-Sp1-, particularly preferably straight-chain or branched, optionally mono-or polyfluorinated, alkyl, alkoxy, alkenyl, alkynyl, alkylcarbonyl, alkoxycarbonyl or alkylcarbonyloxy 20 25 30 35 P 141055 R°. Rao -87-having 1 to 12 C atoms (where the alkenyl and alkynyl radicals have at least two and the branched radicals at least three C atoms), each, independently of one another and on each occurrence identically or differently, denote H or alkyl having 1 to 12 C atoms, RY and R2 each, independently of one another,denote -I, F, CH3 or CFa, X1, X2 and X3 each, independently of one another, denote -CO-O-, 0-00-or a single bond, Z1 denotes-O-, -CO-, -C(RYR4)-or -CF2CF2-, Z2 and each, independently of one another, denote -00-0-, -0-00-, -CH20-, -OCH2-, -CF20-, -0CF2-or -(CH2)n-, where n is 2, 3 or 4, L on each occurrence, identically identicaliy or differently, denotes F, CI, CN, SCN, SF5 or straight-chain or branched, optionally mono-or polyfluorinated" alkyl, alkoxy, alkenyl, alkynyl, alkyl-carbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 12 C atoms, preferably F, L.' and L" each, independently of one another, denote H, F or CI, r denotes 0, 1, 2, 3 or 4, s denotes 0, 1, 2 or 3, denotes 0, 1 or 2, x denotes 0 or 1.

In the compounds of the formulae M1 to M44, P 14/055 -88 -preferably denotes L L or t<, in which L, identically or differently on each occurrence, has one of the above meanings and preferably denotes F, CI, CN, NO2, CHs, C2H5, C(C113)3, CH(CH3)2, CH2CH(CF13)C2H5, OCHa, 0C2H5, COCHa, COC2H5, COOCH3, COOC2H5, CFa, OCF3, OCHF2, 0C2F5 or P-Sp-, particularly preferably F, CI, CN, CH3, C2H5, OCHa, COCHs, OCFs or P-Sp-, very par-ticularly preferably F, CI, CHs, OCHa, COCH3 or OCFa, in particular F or CHa.

Suitable polymerisable compounds are listed, for example, in Table D. The liquid-crystalline media in accordance with the present application preferably comprise in total 0.1 to 10%, preferably 0.2 to 4.0%, particula preferably 0.2 to 2.0%, of polyrnerisable compounds.

Particular preference is given to the poiymerisable compounds of the for-mula M and the formulae RM-1 to RM-94.

The mixtures according to the invention may furthermore comprise conventional additives, such as, for example, stabilisers, antioxidants, UV absorbers, nanoparticles, microparticles, etc. The structure of the liquid-crystal displays according to the invention corresponds to the usual geometry, as described, for example, in EP;A 0 240 379.

F 14/055 -89 -The following examples are intended to explain the invention without limiting it. Above and below, per cent data denote per cent by weight; all temperatures are indicated in degrees Celsius.

Throughout the patent application, 1,4-cyclohexylene rings and 1,4-phenylene rings are depicted as follows: 1 H or \ r o or The cyclohexylene rings are trans-1,4-cyclohexylene rings.

Throughout the patent application and in the working examples, the structures of the liquid-crystalline compounds are indicated by means of acronyms. Unless indicated otherwise, the transformation into chemical formu-lac is carried out in accordance with Tables 1-3. All radicals Cril-120t1, Cm1-12mt, and Cm,117,4.1 or C,H2nand CmH2m are straight-chain alkyl radicals or alkylene radicals in each case having n, m, m or z C atoms respectively. n, m, in', z each denote, independently of one another, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12, preferably 1, 2, 3, 4, 5 or 6. In Table 1 the ring elements of the respective compound are coded, in Table 2 the bridging members are listed and in Table 3 the meanings of the symbols for the left-hand or right-hand side chains of the compounds are indicated.

Table 1. Ring elements c 0 A Al F s r ) / B(S) P 14/055 -90 -0 0 Di

F Fl

GI

K

L LI rN )

M

MI

N-\ o NI 0

P

P 1,1/055 -91 -

F

U

F

Y

F CI ( 0 0

F

UI

Table 2: Bridging members E -CH2CH2- V -CH=CH-

-GEC-

W -CF2CF2-

-COO-

01 -OCH2- 01 -0C.F2-

Table 3: Side chains

Left-hand side chain Right-hand side chain n- Cn/i2n+i- -n -CriFi2n1-1 n0- CrIFI2n+1-0- -On -0-Cn1-12n+i V- CH2=CH- -V -CH=CI-12 nV- OnFi2n+1-CH=CF-1- -nV -CnH2n-CH=CH2 Vn- CH2=CH-CnFi2n- -Vn -CH=CH-CnH2n4i P 14/055 -92 -nVm- CnH2n+1-CHz--CH-CirH2m- -nVm -CnH211-CH=CH-CruH201,1

N- NEC- -N

F- F- -F -F

Cl- Cl- -CI -Cl NI- -M -CFH2 D- CF2H- -D -CF2H T- CF3- -T -CF3 MO- CFH20- -OM -OCFH2 DO- CF2H0- -OD -OCF2H TO- CF30- -OT -OCF3 T- CF3- -CF3 A- H-C7C- -A -CC-H Besides the compounds of the formula I, the mixtures according to the in-vention preferably comprise one or more of the compounds of the compounds mentioned below from Table A indicated below.

Table A

The following abbreviations are used: (n, m, mi, z: each, independently of one another, 1, 2, 3, 4, 5 or 6; (0)Cm1-12,Tiv1 means OCrnH2nirl Or Cmil2m4-1) Cn-H 2n+1 "n 2r.±1 AIK-n-F F \ 0 OC,F12,.+1 AIY-n-Om

N

n2n410 0 \ 0)--0CmH2n" B-nO-Om P 14(055 -93 -

F CO,--

C,F12",,, AY-n-Om C,H2,4 10 B-n0-05i CB-n-m F, (') 0 0 rrt an+1 CB-n-Om ( 0) 0 \ ) PB-n-m Cr: 2n+ CmH2tn+1 P 14/055 -94 -/ \ PB-n-Om 0011H2mti

C H

111 4r11+1 BCH-nm CnEl2n+1 C1/4 ^ / 21-Cmital+1 BCH-nmF

ON

C H m 2p1+: _z BCN-nm C-111-111

F

ernH2rn+1 CY-n-Om 0,1-12n+1 CnH29-1-1 P 141/05c -95 -

CI

CI-191--\ H 0 -0Cm1-12ffio CY(CI,F)-n-Om CnEl2n+ 1 < H CCY-n-Om 0CmH2rial

CI F (

H C 0

CI --/

OCrIFI 2m-1 CCY(F,CI)n-Om Cr 2[1+1

F F

>-----0CmH2m+1 CCY(CI,F)-n-Om

F

r'r\jo, r-rr CniF12m +1 CCY-n-m f_' 3-I

F F (

H

CCY-V-m n H2r7 \\\ F1 CCY-Vn-m P 141055 -96-F H inH.2",-CH=CH2 CCY-n-OmV C n 1-121). 1 2

F

CBC-nmF CDH2n11fi 0 \ \ \ H \--r) CBC-nm i//"f CCP-V-m (CH2 H CCP-Vn-m Cn H, H 2m+ 1 CCP-nV-m Cn 2n+1 OmH2m+1 CCP-n-m

F F \ 0 /

CPYP-n-(0)m CnH2",/ ----\ H (0)C,,H2nni P 14/055 -97 -

H

CYYC-n-m

F F F ) \ L

CCYY-n-(0)m (0)Cm1-12""i

F F

( H t- 0) 0-C2E-14-CH=CH, CCY-n-02V C"F12",1 \ C,m,H+1 K' I-I i-1 \ H 7-OCniltrn+i CCH-110M 7- \ i CM2r1+1 \ H itir -s, El Cm H2rii+1 CCC-n-m /----\ ---\ / CiP2n-11 -1\ H H 7----c H /1 CCC-n-V

F F

Cni-12"i 1-1-\,-K 0/ --.0rn a FI, n+1 CY-n-m 2n+1 CmH2m+1 CCH-nm P 14/055 -98 -CC-n-V CnH2n+1 fi H CC-n-V1 CnH2n+1 CmH, CC-n-Vm

CC-V-V

/7 \ H CC-V-V1

H

CC-2V-V2 CnH2n4---\\ H enH2m+1

H

CVC-n-m Cn H2n+ C,H2,-CH=CH2 CC-n-mV P 14/055 -99 -CH20 - H CCOC-n-m CI-I-nm

H /% C,H2,

CnH2n+1 Hf H1 COO CP-nOmFF

F

°C01112104-1 CEY-11-OM

F

CEY-V-n

F F

\--Th)---''n"20+1 CVY-V-n

F / \

O 1112"1 CY-V-On / C,F12, H F F OCH2CH=CH2 CY-n-01V P 14/055 -100 -F F CH3 0 OC=CH2 CY-n-OC(CH3)=CH2 7- CN C,H(\ H -CmH2rn+1 CCN-nm CnH2n+1 OCH=CH2 CY-n-OV \ H >----000-----0 / H CCPC-nm F CH2),-0C,"H2," \ft H CCY-n-zOm

F ) (

( 0 0 1 OC"H2,,i C111 I2nrt CPY-n-Om

F

o >---C,,,H2",1 CPY-n-m P 14/055 -101 -H 0 > CPY-V-Om

F

CFOOO

CQY-n-(0)m 00,F12,+1 0,112"41 (H m 12m+1

F F

)------/ Cr:11211+i OCF2--CQIY-n-(0)m

F

) (0)C,,,H7,,,i

H H

CCQY-n-(0)m

F

CoH2ntl H OCF2 CCQIY-n-(0)m H /).-( 0 (0)0m112"".1

-

CPQY-n-(0)m

F F o

H)-0C[2 cnti.,"+1 \ * CPQIY-n-(0)m P 14/055 -102 -H ---( 0 CPYG-n-(0)m

F FT).-

CCY-V-Om H H (0)C,H2", CCY-V2-(0)m

H---\

CCY-1V2-(0)m (0)C"H2",., C \ 4H H -(0)0n H2m CCY-3V-(0)m C,112"; CCVC-n-V 11>-(>--\\

H

CCVC-V-V

P 111055 -103 -CnH2ni 1 CPYG-n-(0)m CPGP-n-m \ 0 -(0)CmH2,"+1 CY-nV-(0)rn CnH2n+1 CnH2n+1 CENaph-n-Om

F F

/ 0 7----0 C,F12,.1 \\ ) OCrnFi2rn+1 ___ _/ .---- J COChrom-n-Om

F

\ 0 -O.

HC

CnH2n+.1 / rnH 2tn+1 COChrorn-n-m P 1410.55 -104 -

F F

CCOChrom-n-Om F F MH,1T.

0 0 4ti \ ( H / \ CCOChrom-n-m

F

-0C H ym 2rn+1 /F Hp--- 0 >-----0CmH2n," CONaph-n-Om

F

--OCmH2m4i CCONaph-n-Om

F F ) F

< I-1 0 K, ( CnH2n+1 CCNaph-n-Om F F 0 C mH2n.,+.1 \\F ------{ 0 \ CNaph-n-Om P 14/055

F

CETNaph-n-Om Cnil2ntl

F F C H, 1 \

CTNaph-n-Om ---0Cnifri2m+1 CK-n-F F if ei. \ ,

OnF12"1-H t. \--- ," 00,,H241 CLY-n-Om

F F \-(

H / ClY1 2rn+1 CLY-n-m \k' //) \ ."--"1_4rril 12p-n-fri LYLI-n-m

F F \

/7----\ H /<0 2 Cmitin+1 CYLI-n-m CnH2/14-1---P 14/055 -106 -C1H2n+1 0 1 (0)GmAniti \ LY-n-(0)m

H

CnH2n+i \

H /

COYOICC-n-m

F \ / )

o_< o s\> COYOIC-n-V 0"H2wo CCOY-V-02V

H

CCOY-V-03V

F

0 ---0C,"1-12".0 COY-n-Om CnH2nql / CriH2", H)*--( H CH20 0 / ..

CCOY-n-Om P 14/055 -107-

F

c00------D-nOmFF 0 OCrnH2"1-1 CrH2ri 1-1 0 Cm F1,2m+1 PCH-nm OC,H2,,,i PCH-nOm

F F

\0 \ 0 _2--F P0101-n-F

F

0 > CrnF12"0 1 PGP-n-m \ ' PP-n-rn C,H2n+i \\ PP-n -2V1

F

CflH2E+1 \\L 0 S c\ 0 PYP-n-mV kitjHuj30 0)-( O\)JtuHu Auk' u-AdA 7 L:17 -----14-U7 Li \ tu-u-AdA tti-u-d,kd 0 \--JO 1*"u0 i.+LUe 1.1J

H

Htuao---117 Li tm0-u-Aled L +LIZ u

OZ g

CI-

I +11.17" lt/e;+uz H H 0 yyD!pI. d P 14/055 -109 -Cnitr, rnH2m+1 PY-n-m CinH2m+1 PY-V2-Om cr.H2r, I(P) 0 CmH2,+1 DFDBC-n(0)-(0)m n.10 -OCmH2m+1 Y-n0-0m OC,,F12" Y-nO-OmV Cn11211.

Cm I-I211+10, 2rn +1 Y-n0-0mVm' 12m+1 YG-n-Om P 14/055 -110 -OCrnH2rn+1 YG-n0-0m CE1H21i-1 0 ii-c\t.1H2nz+1 YGI-n-Om

F F F

C,1-12" (Jj -\_07 YGI-nO-Om

F F

0 /OCrnH2r0+1 YY-n-Om CF1H2n4-1

F F F F

CnH2ao ©) OC,1-12m+1 YY-nO-Om The liquid-crystal mixtures which can be used in accordance with the invention are prepared in a manner which is conventional per se. In general, the desired amount of the components used in lesser amount is dissolved in the components making up the principal constituent, advantageously at elevated temperature. It is also possible to mix solutions of the components in an organic solvent, for example in acetone, chloroform or methanol, and to remove the solvent again, for example by distillation, after thorough mixing.

By means of suitable additives, the liquid-crystal phases according to the invention can be modified in such a way that they can be employed in any P 14/055 type of, for example, ECB, VAN, IPS GH or ASM-VA LCD display that has been disclosed to date.

The dielectrics may also comprise further additives known to the person skilled in the art and described in the literature, such as, for example, UV absorbers, antioxidants, nanoparticles and free-radical scavengers. For example, 0-15% of pleochroic dyes, stabilisers or chiral dopants may be added. Suitable stabilisers for the mixtures according to the invention are, in particular, those listed in Table B. For example, 0-15% of pleochroic dyes may be added, furthermore conductive salts, preferably ethyldimethyldodecylammonium 4-hexoxybenzo ate, tetrabutylammonium tetraphenylboranate or complex salts of crown ethers (cf., for example, Haller et al., Mol. Cryst. Lid. Cryst., Volume 24, pages 249-258 (1973)), may be added in order to improve the conductivity or substances may be added in order to modify the dielectric anisotropy, the viscosity and/or the alignment of the nematic phases. Substances of this type are described, for example, in DE-A 22 09 127, 22 40 864, 23 21 632, 23 38 281, 24 50 088, 26 37 430 and 28 53 728.

Table B shows possible dopants which can be added to the mixtures according to the invention. if the mixtures comprise a dopant, it is employed in amounts of 0.01-4% by weight, preferably 0.1-1.0% by weight.

Table B

Table B indicates possible dopants which are generally added to the mixtures according to the invention. The mixture is preferably comprise 0-10% by weight, in particular 0,01-5% by weight and particularly preferably 0.01- 3% by weight of dopants.

0 RCN 0 0 CN CH, / CH.

CIS CB 15 CH, (:),1-1"0 0--CH-C,H CH, C,H"-CM 44 CH2:CH-C,H, CH, R/S-8 1 f-c;\) 0 -- 0-CH 0) CM 45 CM 21 C3H7 I P 14/055 / C8H17O \ 0 * 0-CH HC C2Fis 0 1 5 C9F1 1.--CM 47 Chi CH, R/S-2011 R/S-3011 C Fla --------..,--'----, / \ 0 \ 0 0 1 --OCH-C,H" ,..,..",-,0 y C51111 0 1 0 --...".----,,,"--R/S-4011 R/S-5011 [ o 1 ic-\\ C5HiC CH -COO-\-1-00C- / R/S-1011 2.5 OH. F eft "

OCH-C,H"

H

P 14/055 113 -

Table C

Stabilisers which can be added, for example, to the mixtures according to the invention in amounts of 0-10% by weight are shown below.

H

OH

4, 5, 6 or 7 C1)-H2r" -(

-OH CnH,"

0 >------OH _r\ n 1, 2, 3, 4, 5, 6 or 7 n = 1 4,5,6or7 CH2nFl 0 OH \-OH HO-, 0, O\ OH /

O

SOH

I

HO -j-s 0, P 14/055 -114 -off /1

OH

O

0/ c) 0).c) C. pH)/ /Th J.N---P 14/055 "OH

N N °

P 14/055 -116 -

M N OH

_14 J"

CI N

0.-A"0

HO N

N

I I

R"."----'*N-N.

HO

HO

P 4/055 117 - " PH Y-44, 7' \ ____/ 0 i \_0 ____; 0-\ / -7( ) ° o 'No ANN^\ P 14/055 0 1

Table D

Table D shows example compounds which can preferably be used as reactive mesogenic compounds in the LC media in accordance with the present invention. If the mixtures according to the invention comprise one or more reactive compounds, they are preferably employed in amounts of 0.01-5% by weight. It may also be necessary to add an initiator or a mix-ture of two or more initiators for the polymerisation. The initiator or initiator mixture is preferably added in amounts of 0.001-2% by weight, based on the mixture. A suitable initiator is, for example, Irgacure (BASF) or Irganox (BASF). RM-1 RM-2

P 14/055 -119 -RIO-3 == 0--(r-\\\> 0 0 -6 RM-4 RM-5 RM-6 RM-7 RM-8 RM-9 RM-10 RM-11 RM-17

F () RM-18 RM-19 RM 20

P141055 -120 -0-k'

F

F

P

0 -(/ -/M--0 C) RM-12 RM-13 RM-14 RM-15 Rrv1-16 RM-27 F F F 0 0_1-Q1S_ \:=J P 14/055 -121 -

F F

F F 0 p

\^}._ 0 =1 rCo RM-21 RM-22 RM-23 RM-24 RM-25 RM-23 RM-28 RM-29 RM-0 P 14/055 o--e "7, .40 v=-; RM-37 RM-38 RM-33 RM-31 RM-32 11-At^-* RM-34 RM-35 RM-36 -122 -P 14/055 -123 RM-39

U RM-40

F RM-41 o

-

r-t=Ki -o /0-4 \ 0 2-\0 i=0 ==\>-** oo RM-42 RM-43 RM-44 RM-45 RM-46 RM-47 RM-48 -o RM-49 RM-50 0 yy \>-4-M-\ -0 \ s\r/

F F ==< RM-51 RM-52

-----0 o RM-53 P 141055 -124 -RM-54 P 14/055 -125 -I 0 RM-55 0"--1--1-C RM-56 0 0 RM-57 11 RM-58 11 0 0 RM-59 RM-6U RM-61 ±-4"," RM--62 -r 0 -oi /_ o RM-63 ri-(.

1. 1,i 0---.'N-Ni-:-----N-7----->,.------s-..--' 0 t, 1 "...i P 14/055 -126 -o /;/ 0. RM-65 RM-66 RM-67 RM-68 RM-69 RM-70

P 14/055 f=== C.3 1-1---( \ /CM7 RM-71 RM-72 RM-73 RM-74 RM-75 RM-76 P 14/055 0 RM-77 I I 0 0' ri RM-78 RM-79 R M -80 P 14/055 RM-81 RM-82 0 /*)--ii\

O

0 i>" ' ,\ © 4 RM-83 RM-84 RM-85 P 14/055 -130

I

F RM-86 RM-87 RM-88 RM-89 RM-90

P 141055 -131 RM-91 ii z F RM-92 k\ c <:' / 0 0 c 0 0 / -4(

-RM-93

F

20,1/4), so 0-4 RIV1-9 o ( 0 In a preferred embodiment, the mixtures according to the invention com-prise one or more polymerisable compounds, preferably selected from the polymerisable compounds of the formulae RM-1 to RM-94. Media of this type are suitable, in particular, for PS-FFS and PS-IPS applications. Of the reactive mesogens shown in Table D, compounds RM-1, RM-2, RM-3, RM-4, RM-5, RM-11, RM-17, IRM-35, RM-41, RM-44, RM-62 and RM-81 are particularly preferred.

Working examples:

The following examples are intended to explain the invention without limiting it. In the examples, m.p. denotes the melting point and C denotes the clearing point of a liquid-crystalline substance in degrees Celsius; boiling temperatures are denoted by m.p. Furthermore: C denotes crystalline solid P 141055 -132 -state, S denotes smectic phase (the index denotes the phase type), N denotes ['emetic state, Ch denotes cholesteric phase, I denotes isotropic phase, Tg denotes glass-transition temperature. The number between two symbols indicates the conversion temperature in degrees Celsius an.

The host mixture used for determination of the optical anisotropy An of the compounds of the formula I is the commercial mixture ZLI-4792 (Merck KGaA), The dielectric anisotropy As is determined using commercial mix-Lure ZLI-2857. The physical data of the compound to be investigated are obtained from the change in the dielectric constants of the host mixture after addition of the compound to be investigated and extrapolation to 100% of the compound employed. In general, 10% of the compound to be investigated are dissolved in the host mixture, depending on the solubility.

Unless indicated otherwise, parts or per cent data denote parts by weight or per cent by weight.

Above and below: Vo denotes threshold voltage, capacitive [V] at 20°C, ne denotes extraordinary refractive index at 20°C and 589 nm, no denotes ordinary refractive index at 20C and 589 nm, An denotes optical anisotropy at 20°C and 589 nrn, r, denotes dielectric permittivity perpendicular to the director at 20°C and 1 kHz, denotes dielectric permittivity parallel to the director at 20°C and 1 kHz, As denotes dielectric anisotropy at 20°C and 1 kHz, cl.p T(N,I) denotes clearing point [°C], denotes rotational viscosity measured at 20°C [mPais], determined by the rotation method in a magnetic field, Ki denotes elastic constant, "splay" deformation at 20°C [pN], K2 denotes elastic constant, "twist" deformation at 20°C [pN], K3 denotes elastic constant, "bend" deformation at 20°C [pN], LTS denotes low-temperature stability (nematic phase), deter-mined in test cells.

P 141055 133 -Unless explicitly noted otherwise, all values indicated in the present application for temperatures, such as, for example, the melting point T(C,N), the transition from the smectic (S) to the nematic (N) phase T(S,N) and the clearing point T(N,I), are indicated in degrees Celsius (°C). Up, denotes melting point, ci.p. -e clearing point. Furthermore, Tg -glass state, C -.-crystalline state, N = nematic phase, S = smectic phase and I = isotropic phase. The numbers between these symbols represent the transition tern-peratures.

All physical properties are and have been determined in accordance with "Merck Liquid Crystals, Physical Properties of Liquid Crystals", Status Nov. 1997, Merck KGaA, Germany, and apply for a temperature of 20°C1 and An is determined at 589 nm and As at 1 kHz, unless explicitly indicated otherwise in each case.

The term "threshold voltage" for the present invention relates to the capacitive threshold (Vo), also called the Freedericksz threshold, unless explicitly indicated otherwise. In the examples, as is generally usual, the optical threshold can also be indicated for 10% relative contrast (V10).

The display used for measurement of the capacitive threshold voltage con-sists of two plane-parallel glass outer plates at a separation of 20 pm, which each have on the insides an electrode layer and an unrubbed poly-imide alignment layer on top, which cause a horneotropic edge alignment of the liquid-crystal molecules.

The display or test cell used for measurement of the tilt angle consists of two plane-parallel glass outer plates at a separation of 4 pm, which each have on the insides an electrode layer and a poiyimide alignment layer on top, where the two polyimide layers are rubbed antiparallei to one another and cause a homeotropic edge alignment of the liquid-crystal molecuies.

The polymerisable compounds are polymerised in the display or test cell by irradiation with UVA light (usually 365 nm) of a defined intensity for a pre-specified time, with a voltage simultaneously being applied to the display P 141055 -134 - (usually 10 V to 30 V alternating current, 1 kHz). In the examples, unless indicated otherwise, a 50 mW/cm2 mercury vapour lamp is used, and the intensity is measured using a standard UV meter (make Ushio UNI meter) fitted with a 365 nm band-pass filter.

The tilt angle is determined by a rotational crystal experiment (Autron cMelchers TBA-105). A low value (i.e. a large deviation from the 90' angle) corresponds to a large tilt here.

The VHR value is measured as follows: 0.3% of a poiymerisable monomeric compound are added to the LC host mixture, and the resultant mixture is introduced into TN-VHR test cells (rubbed at 90°, alignment layer TN polyimide, layer thickness d ct 6 pm). The HR value is determined after 5 min at 100°C before and after UV exposure for 2 h (sun test) at 1 V, Hz, 64 ps pulse (measuring instrument: Autronic-Melchers VHRM-105).

In order to investigate the low-temperature stability, also known as "LTS", i.e. the stability of the LC mixture to spontaneous crystallisation-out of indi-vidual components at low temperatures, bottles containing 1 g of LC/RM mixture are stored at -10°C, and it is regularly checked whether the mixtures have crystallised out.

The so-called "HTP" denotes the helical twisting power of an optically active or chiral substance in an LC medium (in pm). Unless indicated otherwise, the HTP is measured in the commercially available nematic LC host mixture NILO-6260 (Merck KGaA) at a temperature of 20°C.

Unless explicitly noted otherwise, all concentrations in the present applica-tion are indicated in per cent by weight and relate to the corresponding mixture as a whole, comprising all solid or liquid-crystalline components, without solvents. All physical properties are determined in accordance with "Merck Liquid Crystals, Physical Properties of Liquid Crystals", Status November 1997, Merck KGaA, Germany, and apply for a temperature of 20°C, unless explicitly indicated otherwise.

P 14/055

Mixture examples 3

Example M1

CC-3-V 41.00% Clearing point ['C]: 74.n CCY-3-02 11.00% An [589 nm, 20C]: 0.1005 CCY-3-01 2.50% Ac [1 kHz, 20°C]: -3.7 CLY-3-02 4.00% [1 kHz, 2000]: 3.7 CLY-3-03 4.00% [pN, 20°C]: 13.3 CPY-2-02 4.00% Ka [pN, 20'C]: 15.0 CPY-3-02 11.00% yi [rnPa.s, 20°C]: 87 CY-3-02 7.50% Vo [20°C, V]: 2.14 PY-3-02 12.00% B-30-05 3.00%

Example M2

CC-3-V 42.00% Clearing point NI: 73.5 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1009 CCY-3-02 10.00% As [1 kHz, 20°C]: -3.5 CCY-4-02 2.50% r.1 [1 kHz, 20°C]: 3.6 CPY-2-02 10.00% Ki [pN, 20°C]: 12.9 CPY-3-02 10.00% Ka [pN, 20°C]: 14,5 CY-3-02 6.50% yi [rriPa.s, 20°C]: 88 PY-3-02 11.00% Vo [20°C, V]: 2.14 B-30-05 3.00%

ExampleExamole MS

CC -3-V 43.00% Clearing point [°C]: 73.5 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1011 CCY-3-02 10.00% As [1 kHz, 20°C]: -3.6 CCY-4-02 2.00% c [1 kHz, 20°C]: 3.7 CPY-2-02 10.00% K1 [pN, 20°C]: 13.3 P14/055 CPY-3-02 CY-3-02 PY-3-02 B-30-05 10.00% Ka [pN, 20°C]: 14.7 5.00% yi [mPa,s, 20°C]: VG [20°C, V]: 83 11.00% 2.14 4.00%

Example M4

CC-3N 40.50% Clearing point [C]: 74.0 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1005 CCY-3-02 10.00% At; [1 kHz, 20°C]: -3.6 CCY-4-02 3.50% oil [1 kHz, 20°C]: 3.6 CPY-2-02 10.00% K1 [pN, 20°C]: 12.9 CPY-3-02 10.00% K3 [pN, 20°C]: 14.6 CY-3-02 8.00% yi [mPa-s, 20°C]: 88 PY-3-02 11.00% Vo [20°C, V]: 2.14 13-30-04 2.00%

Example M5

CC-3-V 42.00% Clearing point ['Cr 73.5 CCY-3-01 5.00% An [589 nm, 20C]: 0.1011 CCY-3-02 10,00% As [1 kHz, 20°C]: -3.6 CCY-4-02 2.50% oil [1 kHz; 20°C]: 3.7 CPY-2-02 10.00% Ki [pN, 20°C]: 12.9 CPY-3-02 10.00% K3 [pN, 20°C]: 14.6 CY-3-02 6.50% yi [rnPa.s, 20°C]: 85 PY-3-02 11.00% Va [20°C, V]: 2.14 B-20-04 3.00%

Example M6

CC-3-V 42.00% Clearing point VC]: 73.5 CCY-3-01 5.00% An [589 nm, 20°C]: 0,1001 P14/055 CCY-3-02 10.00% -137 -3.5 CCY-4-02 2,50% Ac [1 kHz, 20C]: 3.6 F,11[1 kHz, 20°C]: CPY-2-02 10.00% Ki [pN, 20°C]: 13.0 CPY-3-02 10.00% Ka [pN, 20°C]: 14.5 CY-3-02 6.50% yi [mPa's, 20°C]: 84 PY-3-02 11.00% Vo [20°C, Vil: 2.15 8-30-06 3.00%

Example M7

CC-3-V 42.00% Clearing point [°C]: 73.5 CCY-3-01 5.00% An [589 nm, 20°C]: 0,1007 CCY-3-02 10.00% Al:: [1 kHz, 20°C]: -3.5 CCY-4-02 2.50% ali [1 kHz, 20'C]: 3.7 CPY-2-02 10.00% Ki [pN, 20°C]: 12.9 CPY-3-02 10.00% Ka [pN, 20°C]: 14.6 CY-3-02 6.50% yi [mPa,s, 20°C]: 84 PY-3-02 11.00% Vo [20°C, V]: 2.15 6-20-05 3.00%

Example M8

CC-3-V 45.50% Clearing point [°C]: 73.0 CCY-3-01 3.00% An [589 nm. 20'C]: 0.1011 COY-3-02 11.00% Ac [1 kHz, 20'C]: -3.5 CCY-4-02 3.50')/0 ell [1 kHz, 20°C]: 3.6 CRY-2-02 7.50% Ki [pN, 20°C]: 13.1 CPY-3-02 10.00% Ka [pN, 20°C]: 14.3 CY-3-02 2.00% yi [mPa.s, 20°C]: 79 FY-3-02 11.50% Vo [20°C, V]: 2.15 3-20-05 6.00% P 14/055 -138 -Example M9 CC-3-V 42.00% Clearing point ["C]: 73.5 CCY-3-01 5.00% An [589 nm, 20°C]; 0.0993 CCY-3-02 10.00% Ag [1 kHz, 20°C]: -3.5 CCY-4-02 2.50% El [1 kHz, 20°C]: 3.6 CPY-2-02 10.00% Ki [pN, 20"C]: 12.9 CPY-3-02 10.00% K3 [pN, 20"C]: 14.5 CY-3-02 6.50% 71 [mPas, 20°C]: 84 PY-3-02 11.00% Vo [20°C, V]: 2.14 B-30-03 3,00%

Example M10

CC-3-V 45,50% Clearing point [°C]: 73.5 CCY-3-01 3.00% An [589 nm, 20°C]: 0.1009 CCY-3-02 11.00% Ac [1 kHz, 20°C]: -3.5 CCY-4-02 3.00% al [1 kHz, 20°C]: 3.6 CPY-2-02 8.50% Ki [pN, 20°C]: 13.2 CPY-3-02 10.00% K3 [pN, 20°C]: 14.3 CY-3-02 2.00% yl [rnPa.s, 20°C]: 80 PY-3-02 11.00% Vo [20°C, V]: 2.15 B-20-05 3.00% B-30-05 3.00%

Example M11

CC-3-V 35.50% Clearing point [°C]: 73.0 CCY-3-01 6.00% An [589 nm, 20°C]: 0,1006 CCY-3-02 11.00% Se [1 kHz, 20°C]: -4.4 CCY-4-02 6.50% sli [1 kHz, 20"C]: 3,9 CPY-2-02 4.00% Ki [pN, 20°C]: 12.9 CPY-3-02 10.00% Ka 1pN, 20°C]: 14.6 CY-3-02 12.00% yi [mPa.s, 20°C]: 99 P 14/055 PY-3-02 10.00% -139 - 1.93 B-30-05 2.50% Vo [20°C, V]: B-30-04 2.50%

Example M12

CC-3-V 34.50% Clearing point [°C]: 75.0 CC-3-V1 8.00% An [589 nrn, 20°C]: 0.1084 CCY-3-01 6.00% Ac [1 kHz, 20°C]: -3.1 CCY-3-02 11.50% c:i [1 kHz, 20°C]: 3.5 CCY-4-02 3.50% Ki [pN, 20°C]: 14.3 CPY-3-02 11.50% K3 [pN, 20°C]: 15.9 FY-3-02 16.00% yi [mPa.s, 20°C]: 87 PYP-2-3 3.00% Vo [20°C, Vj: 2.40 PP-1-2V1 3.00% B-30-05 3.00% ExqmpleJ1.111;3.

CC-3-V 34.50% Clearing point [°C1: 75.0 CC-3-V1 8.00% An [589 nm, 20°C]: 0.1075 CCY-3-01 7.00% AE [1 kHz, 20°C]: -3.1 CCY-3-02 11.50% c [1 kHz, 20°C]: 3.5 CCY-4-02 3.50% Ki [pN, 20°C]: 14.7 CPY-3-02 11.50% K3 [pN, 20°C]: 16.4 PY-3-02 13.00% 71 [mPa.s, 20°4 84 PP-1-2V1 6.00% Vo [20°C, V]: 2.41 8-20-05 5.00%

Example M14

CC-V-V 37.00% Clearing point [°C]: 73.5 CC-V-V1 10.00% An [589 nm, 20°C]: 0,1026 P 141055 CCVC-V-V 7,00% -140 - -3M As [1 kHz, 20°C]: CCVC-3-V 7,00% EH [1 kHz, 20°C]: 3.7 CCC-2-V 3.00% Ki [pN, 20°C]: 11.8 CCC-3-V 4.00% K3 [pN. 20°C1: 11.9 B-40-04 3.00% yi[mPa-s, 20°C]: 57 B-30-04 8.50% Vs [20°C, V]: 2,10 B-30-05 8.50% PB-3-04 7.00% CB-3-04 5.00%

Example MTh

CC-VV 18.00% Clearing point [°C]: 77.8 CC-3-V 21.00% An [589 nm, 20°C1: 0.1040 CC-V-V1 10.00% As [1 kHz, 20°C]: -3.2 CCVC-V-V 7.00% am [1 kHz, 20°C]: 3,7 CCVC-3-V 7.00% Ki [pN, 20°C]: 13.3 CCC-2-V 2.00% Ka [pN, 20°C]: 12.2 CCC-3-V 3.00% r! [mPa.s, 20°C]: 64 B-40-04 3.00% Vo [20°C, V]: 2.07 13-30-04 8.50% B-30-05 8.50% PB-3-04 7.00% CB-3-04 5.00%

Example M16

CC-V-V 38.00% Clearing point [°C]: 74.0 CCVC-V-V 5.00% An [589 nm, 20°C]: 0.1119 CCVC-3-V 10.00% AE [1 kHz, 20°C]: -4.8 CCC-2-V 3.00% EliLi kHz, 20°C]: 4,3 CCC-3-V 4.00% Ki [pN, 20°C]: 12.3 B-40-04 2M0% K3 [pN, 20°C]: 11.0 B-30-04 5.00% [mPa-s, 20°C]: 76 F 14/055 B-30-05 7.00% -141 - 1.60 PE3-3-04 6,00% Vci [20'C, V]: CB-3-04 7.00% B-20-05 8.00% B-20-06 5.00%

Example M17

CC-V-V 25.00% Clearing point [°C]: 81.0 CCVC-V-V 4.00% An [589 nm, 20°C]: 0.1068 CCVC-3-V 9.00% AE [1 kHz, 20°C]: -4.2 CCC-2-V 3.00% au [1 kHz, 20°C]: 4.1 CCC-3-V 3.00% Kt [pN, 20°C]: 14.6 B-30-04 4.00% Ka [pN, 20°C]: 11.8 8-30-05 5.00% yt ImPa,s; 20°C]: 90 PI3-3-04 4.00% Vo[20t, V]: 1.70 CB-3-04 7.00% 8-20-05 6.00% 13-20-06 5.00% 8-20-04 3.00% B-10-04 3.00% CCOC-3-3 3.00% CCH-23 3,00% CCH-34 10.00% CCOC-4-3 3.00% Exam* M18 CC-V-V 28.00% Clearing point [CI 55.5 CCVC-V-V 5.00% Ar, [1 kHz, 20'C]: -7.6 CCVC-3-V 10.00% q [1 kHz, 20°CI: 5.8 CCC-2-V 3.00% Kt [pN, 20°C]: 11,1 CCC-3-V 3.00% K3 [pN, 20'C]: 8.6 B-40-04 3.00% yi [mPa.s, 20°C]: 90 P14/055 B-30-04 4.00% -142 - 1.12 13-30-05 3.00% Vo [20°C, V]: 3-40-05 3,00% B-20-04 3.00% B-20-05 5.00% B-20-06 3.00% B-10-05 3.00% B-30-03 4.00% B-30-06 3.00% B-10-04 5.00% B-20-05i 5,00% CCP-V-1 T00%

Example M19

CC-V-V 35.00% Clearing point [C]: 67.5 CCVC-V-V 5.00% Ac [1 kHz, 20°C]: -6.2 CCVC-3-V 8.00% as [1 kHz, 20"C]: 4.8 CCC-2-V 3.00% Ki [pN, 20°C]: 11.9 CCC-3-V 4.00% Ko [pN, 20°C]: 9.6 B-40-04 2.00% yi [mPas, 20"C]: 86 B-30-04 5.00% Vo [20°C, V]: 1.32 B-30-05 7.00% PB-3-04 6.00% CB-3-04 7.00% 3-20-05 8.00% B-20-06 5.00% B-30-03 5.00%

Example M20

CC-3-V 10.00% Clearing point [°C]: 74,5 CC-3-V1 8.00% An [589 nm, 20°C]: 0.1078 CCH-23 10.00% As [1 kHz, 20°C]: -3.3 P 14/055 CCH-34 CCP-3-1 CCY-3-01 5.00% -143 - 3.5 7.00% cp [1 kHz, 20°C]: 14.6 5.00% K [pN, 20°C]: 15.7 K3 [pN, 20°C]: CCY-3-02 11.00% -y1 [mPas, 20°C]: 101 CCY-4-02 4.50% Va [20°C, VI: 2.32 CPY-3-02 3.00% CY-3-02 12,00% PY-3-02 8.50% PYP-2-3 8.00% B-20-05 4.00% PP-1-2V1 4.00%

Example M21

CC-3-V 15.00% Clearing point [°C]: 74.0 CC-3-V1 8.00% An [589 nrn, 20°C]: 0,1078 CCH-23 10.00% AG [1 kHz, 20°C]: -3.1 CCH-34 7.00% cli [1 kHz, 20°C]: 3.5 CCY-3-01 8.00% Ki [pN, 20°C]: 14.6 CCY-3-02 11.00% K3 [pN, 20C]: 15.1 CCY-4-02 3.50% yi [mPas, 20°C]: 94 CPY-3-02 6.00% 'Jo [20°C, V]: 2.32 CY-3-02 5,50% PY-3-02 10.00% PYP-2-3 8.00% B-20-O5 4.00% PP-1-2V1 4.00%

Example M22

CC-3-V 42.50% Clearing point Ft]: 75.0 CCP-3-1 4.50% An [589 nm, 20°C]: 0.0984 CCY-3-01 9.00% Ac [1 kHz, 20°C]: -3.2 CCY-3-02 11.00% Eli [1 kHz, 20°C]: 3.6 P 14/055 CPY-3-02 CPY-2-02 CY-3-02 8.00% -144 13.5 4.50% K [pN, 20°C]: 15.1 3.00% K3 [pN, 20°C]: 81 71 [mPa,s, 20°C]: PY-3-02 13,50% Vo [20°C, V]: 2.29 B-20-05 4.00%

Example M23

CC-3-V 45.00% Clearing point [°C]: 75.0 CCP-3-1 3.00% An [589 nm, 20C]: 0,0991 CCY-3-01 8.50% As [1 kHz, 20°C]: -3.3 CCY-3-02 11.00% co [1 kHz, 20°C]: 3.6 CCY-4-02 1.50% Ki [pN, 20°C]: 13.8 CPY-3-02 11.50% K3 [pN, 20°C]: 15.3 PY-3-02 12.50% yi [mPa.s, 20°C]: 80 13-20-05 4.00% Vo [20°C, V]: 2.28 13-3-02 3.00%

Example M24

CC-3-V1 8.00% Clearing point [°C]: 74.0 CCH-23 18.00% An [589 nm, 20°C]: 0.0978 CCH-34 3.00% As [1 kHz, 20C]: -3.4 CCH-35 4.00% rd [1 kHz, 20°C]: 3.6 CCP-3-1 14.00% Ki [pN, 20°C]: 14.9 CCY-3-02 11.00% K3 [pN, 20°C]: 16.1 CCY-3-01 2.00% 71 ImPas., 20°C]: 102 CPY-3-02 11.00% Vo [20°C, V]: 2,28 CY-3-02 10.50% PY-3-02 12.50% B-20-05 3.00% Y-40-04 3.00% P 141055

Example M25 -145 -

CC-3-V1 7.00% Clearing point [°C]: 73.0 CCH-23 18.00% An [589 nm, 20°C]: 0.0969 CCH-34 3.00% As [1 kHz, 20°C]: -3.4 CCH-35 4.00% sit [1 kHz, 20°C]: 3.6 CCP-3-1 14,00% Kl [pN, 20°C]: 14.6 CCY-3-02 11.00% Ka [pN, 20C]: 15.8 CCY-3-01 3.00% yi imPa.s, 20°C]: 102 CPY-3-02 11.00% Vo [20°C, V]: 2.29 CY-3-02 12.00% PY--3-02 11.00% Y-40-04 3.00% 6-2-02 3.00%

Example M26

CC-V-V 31.50% Clearing point [°C]: 75.0 CCP-3-1 5.00% An [589 nm, 20°C]: 0,0949 CCY-2-1 12.00% Ac [1 kHz, 20°C]: -3.8 CCY-3-01 7.50% Eli [1 kHz, 20'C]: 3.7 CCY-3-02 8.00% K1 [pN, 20°C]: 11.4 CLY-3-02 5,50% Ka [pN, 20°C]: 14,2 CLY-3-03 4.00% yi [mPa.s, 20°C]: 88 CPY-2-02 4.50% Vo [20°C, V]: 2.04 CPY-3-02 3.00% CY-3-02 11.00% PY-1-04 4.00% 6-20-05 4.00%

Example M27

CC-3-V 36.50% Clearing point [°C]: 80.0 CCY-3-01 6.00% An [589 nm, 20°C]: 0.1028 P 94/055 -146 -CCY-3-02 6.00% At: [1 kHz, 20°C]: -4.4 CCY-4-02 2,50% Ell [1 kHz, 20°C]: 3,8 CLY-3-02 7.00% Ki [pN, 20°C]: 14.2 i..; CLY-3-03 3.00% Ks [pN, 20°C]: 15.9 CPY-2-02 7.00% yi [mPa.s, 20°C]: 108 CPY-3-02 10.00% Vo [20°C, V]: 2.01 CY-3-02 11.50% PY-3-02 5.50% B-20-05 5.00%

Example M28

CY-3-02 9.00% Clearing point [°C]: 87.0 CY-3-04 7.00% An [589 nm, 20°C]: 0.1026 PY-3-02 3.00% Ac [1 kHz, 20°C]: -4.9 CCY-3-01 8,00% ell [1 kHz, 20°C]: 3,9 CCY-3-02 11.00% K1 [pN, 20°C]: 14.5 CCY-4-02 10.00% Ks [pN, 20°C]: 16.7 CPY-2-02 6.50% yi [rnPa,s, 20°C]: 142 CPY-3-02 12.00% Vo [20°C, V]: 1.95 CC-3-V 29.50% B-20-05 4.00%

Example M29

CY-3-02 12.50% Clearing point [°C]: 87.0 CCY-3-01 9.00% An [589 nm, 20°C]: 0.1025 CCY-3-02 11.00% At: [1 kHz, 20°C]: -4.8 CCY-4-02 7.00% c] [1 kHz, 20°C]: 3.8 CPY-3-02 3.00% Ki [pN, 20°C]: 14.1 CC-3-V 31.00% Ks [pN, 20°C]: 16,8 B-20-05 4.00% yi [mPa.s, 20°C]: 127 PY-V2-02 5.50% Vo [20°C, V]: 1.97 CPY-V-02 6.00% P 14/055 CPY-V-04 5.00% -147 CCY-V-02 6.00%

Example M30

CC-3-V 34.50% Clearing point [°C]: 74.0 CC-3-V1 8,00% An [589 nm, 20°C]: 0.1072 CCY-3-01 5.50% Ac [1 kHz, 20°C]: -3.0 CCY-3-02 11.50% ell [1 kHz, 20°C]: 3.5 PY-3-02 7.50% Ki [pN, 20°C]: 14.0 PP-1-2V1 7.00% K3 [pN, 20C]: 15,8 B-20-05 4.00% yi [mPa*s, 20°C]: 78 PY-V2-02 5.00% V0 [20°C, V]: 2.43 CPY-V-02 6.00% CPY-V-04 5.00% CCY-V-02 6.00% Exam_plelv13,1 CC-3-V 42.00% Clearing point [°C]: 74.5 CCP-3-1 5.00% An [589 nm, 20°C]: 0.0997 CCY-3-01 3.00% AE [1 kHz, 20°C]: -3.3 CCY-3-02 11.00% ell [1 kHz, 20°C]: 3.6 CCY-V-02 6.00% Ki [pN, 20°C]: 13.0 CPY-V-02 6.50% Ka [pN, 20°C]: 14.9 CPY-V-04 5.00% yi [mPa.s, 20°C]: 75 CY-3-02 3.50% Va [20°C, V]: 2.26 PY-3-02 5.00% B-20-05 4.00% PY-V2-02 9.00% P 14/055 -148 -

Example M32

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M1 are mixed with 0.3% of the polymerisable compound of the formula

Example M33

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M1 are mixed with 0.25% of the polymerisable compound of the formula 20,P 0-4( \\-n (/r I \\) \ /)_

Example M34

For the preparation of a PS-VA mixture, 99,8% of the mixture according to Example M1 are mixed with 0,2% of the polymerisable compound of the formula P 14/055 0 o

Example M35

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M1 are mixed with 0.25% of the polymerisable compound of the formula Exampie For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M1 are mixed with 0,25% of the polymerisable compound of the formula Exampie M37 For the preparation of a PS-VA mixture, 99/5% of the mixture according to Example M1 are mixed with 0,3% of the polymerisable compound of the ula P14/055 -150 -

Example M38

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M1 are mixed with 0.2% of the polymerisable compound of the formula

F

Example M39

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M1 are mixed with 0.2% of the polymerisable compound of the formula P 14/055 -151 -

Example M40

For the preparation of a PS-VA mixture, 99,75% of the mixture according to Example M2 are mixed with 0.25% of the polymerisable compound of the formula 0-1

Example M41

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M2 are mixed with 0.3% of the polymerisable compound of the formula

Example k142

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M2 are mixed with 0.3% of the polymerisable compound of the formula P 14/055

Example M4

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M2 are mixed with 0.25% of the polymerisable compound of the formula o

Example M44

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M2 are mixed with 0.3% of the polymerisable compound of the formula

Example M45

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M2 are mixed with 0.25% of the polymerisable compound of the formula P14/055 -153 - 0.--, e;./ __,x / Exanwie tib4g3 For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M2 are mixed with 025% of the polymerisable compound of the formula

FO

I 15,/

Example M47

For the preparation of a PS-VA mxture, 99.75% of the mixture according to Example M2 are mixed with 0.25% of the polymerisable compound of the formula P 14/055 -154 -

Example M48

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M3 are mixed with 0.25% of the polymerisable compound of the formula

Example M49

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M3 are mixed with 0.3% of the polymerisable compound of the formula 0

Example M50

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M3 are mixed with 0.3% of the polymerisable compound of the formula

F

P 14/055 -155

Example M51

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M3 are mixed with 0.3% of the polymerisable compound of the formula

Example M52

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M3 are mixed with 0.3% of the polymerisable compound of the formula 1-= 0--e<

Example M53

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M3 are mixed with 0.3% of the polymerisable compound of the formula P 14/055 -156 \ / o) 0 \ 0 -,

Example M54

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M4 are mixed with 0.3% of the polymerisable compound of the formula

F o o

Example 5

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M4 are mixed with 0.25% of the polymerisable compound of the formula 0 -R 0.4 P 14/055 -157 -

Example M56

For the preparation of a PS-VA mixture, 99/5% of the mixture according to Example M17 are mixed with 0,25% of the polymerisable compound of the formula / 0 4 ''\ 0 0 K 0

Example M57

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M21 are mixed with 0.3% of the polymerisable compound of the formula

Example M58

For the preparation of a PS-VA mixture, 99,75% of the mixture according to Example M25 are mixed with 015% of the polymerisable compound of the formula P 14/055 -158 -

Example M59

For the preparation of a PS-VA mixture, 99,75% of the mixture according to Example M28 are mixed with 0.25% of the polymerisable compound of the formula

Example 14Q0

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M29 are mixed with 0.3% of the polymerisable compound of the formula

F o \ /

Example M61

For the preparation of a PS-VA mixture, 99,75% of the mixture according to Example M30 are mixed with 0.25% of the polymerisable compound of the formula P 141055 \_\/Jç )--- \

Example M62

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M31 are mixed with 0.2% of the polymerisable compound of the formula /Th 0

Example M63

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M19 are mixed with 0.25% of the polymerisable compound of the formula vrtr P 14/055

Example M64

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M20 are mixed with 0.25% of the polymerisable compound of the formula

Example M65

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M27 are mixed with 0.25% of the polymerisable compound of the formula

Example M66

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M27 are mixed with 0.25% of the polymerisable compound of the formula 0 2 'k) c.) e 0 P 14/055

Example M67 -161 -

CC-3-V 17.00% Clearing point 1°C]: 75.5 CC-V-V 20,00% An [589 rim, 20°C]: 0.1079 CC-3-V1 8.00% sii [1 kHz, 20°C]: 3.4 CCY-3-01 6.00°A EJ_ [1 kHz, 20°C]: 6.1 CCY-3-02 10.00% As [1 kHz, 20°C]: -27 CCY-4-02 2.50% Ki [pN, 20°C]: 12.5 CRY-2-02 5.50%© Ka [pN, 20°C]: 14.8 CPY-3-02 11.50% Vo [pN, 20°C]: 2.45 PY-3-02 8.50% 71 [mPas, 20°C): 75 PYP-2-3 5.00% PP-1-2V1 3.00% B-30-05 3.00%

Example M68

CC-3-V 20.50% Clearing point [°C]: 74.5 CC-V-V 15.00% An [589 nm, 20°C]: 0.1095 CC-3-V1 8,00% cli [1 kHz, 20°C]: 3.5 CLY-3-02 6.00% Et [1 kHz, 20°C]: 6.3 CCY-3-02 11,50% As [1 kHz, 20°C]: -2.9 CCY-4-02 4.00% [pN, 20°C]: 13.5 CPY-3-02 7.50% Ka [pN, 20°C]: 15.2 BCH-32 3.50% Vo [pN, 20°C]: 2.43 PY-3-02 11.50% [mPas, 20°C]: 77 PGIY-2-04 4.50% PP-1-2V1 4.00% B-20-05 4.00%

Example M69

CC-V-V 36.00% Clearing point [°C]: 75 CC-3-V1 8.00% An [589 nm, 20C]: 0.1076 P 14/055 -162 -CLY-3-02 6.00% Ell [1 kHz, 20°C]: 3.4 CCY-3-02 11.50% el [1 kHz, 20°C]: 6.0 CCY-4-02 5.00% As [1 kHz, 20°C]: -2.7 CPY-3-02 7.50% Ki [pN, 20"C]: 12.0 BCH-32 7.00% Ks [pN, 20°C]: 14.3 PY-3-02 8.00% Vo,pN, 20°C]: 2.46 PGIY-2-04 4.50% yi [rnPas, 20°C]: 70 PP-1-2V1 2.50% B-20-05 4.00%

Example M70

CC-V-V 34.00% Clearing point [°C]: 75.5 CC-3-V1 8.00% An [589 nm, 20°C]: 0.1085 CCY-3-01 7.00% cli [1 kHz, 20°C]: 3.4 CCY-3-02 11.50% ra [1 kHz, 20°C]: 6.1 CCY-4-02 5.00% As [1 kHz, 20°C]: -2.7 CPY-3-02 7.50% Kt [pN, 20°C]: 12.0 BCH-32 7.00% Ks [pN, 20°C]: 14.4 PY-3-02 8.00% V0 [pN, 20°C]: 2,44 PGIY-2-04 4.50% 71 imPa*s, 20°C): 74 PP-1-2V1 3.50% B-20-05 4.00%

Example M71

CC-3-V 9.50% Clearing point [°C]: 74.0 CC-V-V 29.00% An [589 nm, 20°C]: 0.0989 CCP-3-1 10.00% 11[1 kHz, 20°C]: 3.6 CCY-3-01 8.50% ca [1 kHz, 20°C]: 6.7 CCY-3-02 11.00% As [1 kHz, 20°C]: -3.2 CPY-2-02 2,00% Ki [pN, 20°C]: 11.8 CPY-3-02 11.00% Ks [pN, 20°C]: 14.8 CY-3-02 5.00% Vo [pN, 20°C]: 2.28 P 14/055 -163 PY-3-02 10.00% yi [mPa-s, 20°C]: 76 8-20-05 4.00%

Example M72

CC-3-V 15.50% CC-V-V 20.00% CC-3-V1 8.00% CCY-3-01 8,00% CCY-3-02 1 1.50% CCY-4-02 4.50% CPY-3-02 8.50% PY-2-02 6.50% PGIY-2-04 5.00% PP-1-2V1 6.50% B(S)-20-05 3.00% 13-20-05 3.00°.4) Clearing point [°C]: 74.5 An [589 nm, 20°Cj: 0.1075 Eli [1 kHz, 20'C]: 3.5 Et [1 kHz, 20C]: 6.5 Ac [1 kHz, 20°C]: -3.0 Ki [pN, 20°C]: 12.9 KS [pN, 20°C]: 15.0 Vo [pN, 20°C]: 2.35 7-1 [mPa-s, 20°C]: 76 LTS bulk [-20°C]: > 1000 h

Example M73

CC-3-V 17.50% CC-V-V 20.00% CC-3-V1 8.00% CCY-3-01 8.00% CCY-3-02 12.00% CPY-3-02 12.00% PY-2-02 6.00% PGIY-2-04 4.50% PP-i-2V1 6.00% B(S)-20-05 3.00% B-20-05 3.00% Clearing point [°C]: 74 An [589 nm, 20°C1: 0.1074 [1 kHz, 20°C]: 3.5 si [1 kHz, 20°C]: 6.4 Az-; [1 kHz, 20°C]: -2.9 K-1 [pN, 20°CF 12,7 K3 [pN, 20°C]: 15.1 Vo [pN, 20°C]: 2.41 7.1 [mPas, 20°C]: 72 P 14/055 -164 -Example M74 CC-3-V 22.00% Clearing point [°C]: 76 CC-V-V 20.00% An [589 nm, 20°C]: 0.0946 CCY-3-01 8,00% [1 kHz, 20°C]: 3.7 CCY-3-02 12.00% [1 kHz, 20°C]: 7.5 CCY-4-02 2.50% Ac [1 kHz, 20°C]: -3.9 CLY-3-02 6.00% Ki [pN, 20C]: 12.4 CLY-3-03 9.50% Ks [pN, 20°C]: 14.3 CPY-3-02 1.50% Vo [pN, 20°C]: 2.04 CY-3-02 2.50% yi [mPa.s, 20°C]: 78 B-20-05 3.00% B(S)-20-05 3.00% PY-2-02 10.00%

Example M75

CC-3-V 20.50% Clearing point [°C]: 76 CC-V-V 20.00% An [589 nm, 20°C]: 0.0945 CCY-3-01 8.00% .1 [1 kHz, 20°C]: 3.7 CCY-3-02 11.50% i-,:i [1 kHz, 20°C]: 7.6 CCY-4-02 4.00% Ac [1 kFiz, 20°C]: -3.9 CPY-2-02 6.00% Ki [pN, 20°C]: 11.9 CPY-3-02 11.00% Ks [pN, 20°C]: 14.7 CY-3-02 13.50% VG [pN, 20"C]: 2.05 B-20-05 3.00% yi [mPa.s, 20°C]: 84 B(S)-20-05 2.50%

Example M76

CC-3-V 19.50% Clearing point [°C]: 75.5 CC-V-V 23.00% An [589 nm, 20°C]: 0.0989 CCP-3-1 5.50% r;11[1 kHz, 20°C]: 3.5 CCY-3-01 8.00% E_L [1 kHz, 20°C]: 6.6 P 14/055 CCY-3-02 11.00% -165 - -3.1 CCY-4-02 4.00% AS [1 kHz, 20°C]: 122 CPY-3-02 12.00% Ki [pN, 20°C]: 14.8 Ka [pN, 20°C]: PY-3-02 13.00% Vo [pN, 20°C]: 2.30 B-20-05 4.00% yi [mPa.s, 20°C]: 75

Example M77

CC-V-V 15.00% Clearing point [°C]: 74.5 CC-3-V1 7.00% An [589 nm, 20°C]: 0.1071 CCH-23 6.50% Eli [1 kHz, 20'C]: 3.6 CCH-34 4.00% E I [1 kHz, 20'Cli 6.7 CCP-3-1 16.00% As [1 kHz, 20°C]: -3.2 CCY-3-01 4.50% Ki [pN, 20°C]: 13.4 CCY-3-02 12,00% Ka [pN, 20°C]: 15.0 CY-3-02 8.50% Vo [pN, 20°C]: 2.29 P1-3-02 11.50% yi [mPa.s, 20°C]: 88 PYP-2-3 8.00% B-20-05 4,00% B(S)-20-05 3.00%

Example M78

CC-3-V 23.00% Clearing point [°C]: 74.5 CC-V-V 20,00% An [589 Nil, 20°C]: 0.0974 CCP-3-1 5.00% ['I kHz, 20°C]: 3.5 CCY-3-01 7.50% si [1 kHz, 20°C]: 6.6 CCY-3-02 11.00% As [1 kHz, 20°C]: -3.1 CCY-4-02 5.00% K1 [pN, 20°C]: 12.3 CPY-3-02 11.00% [pN, 20°C]: 14.7 PY-3-02 13.50% Vo [pN, 20"C]: 2.30 B-20-05 4,00% 71 [mPa,s, 20°C1: 74 P 14/055 -166 -Example M79 8.50% Clearing point ["CI 73.0 BCH-32 CC-3-V 15.00% An [589 nm, 20°C]: 0.1052 CC-V-V 14.00% E,1[1 kHz, 20°C]: 3.4 CCP-3-1 11,00% ci. [1 kHz, 20°C]: 6.0 CCY-3-01 7.00% As [1 kHz, 20°C]: -2.6 CCY-3-02 8.50% Kr [pN, 20°C]: 12.5 CPY-3-02 7,00% Ka [pN, 20°C]: 14,7 CY-3-02 17.00% Vo [pN, 20°C]: 2.53 PP-1-3 7.00% 71 [mPa.s, 20°C]: 79 8-20-05 4.00% PYP-2-3 1.00%

Example M80

CC-V-V 31.50% Clearing point [°C]: 75.0 CCP-3-1 5.00% An 1589 nm, 20°C]: 0,0949 CCY-2-1 12,00% sil [1 kHz, 20°C]: 3.7 COY-3-01 7.50% sill kHz, 20°C]: 7.5 CCY-3-02 8.00% As [1 kHz, 20°C]: -3.8 CLY-3-02 5,50% Ki [pN, 20°C]: 11.4 CLY-3-03 4.00% Ka [pN, 20°C]: 14.2 CPY-2-02 4.50% Vo [pN, 20°C]: 2.04 CPY-3-02 3.00% 71 [mPa.s, 20°C]: 88 CY-3-02 11.00% PY-1-04 4.00% B-20-05 4.00%

Example_ M81

CC-V-V 31.50% Clearing point [°C]: 74.5 CCP-3-1 4.00% An [589 nm, 20°C]: 0.0945 CCY-2-1 12.00% Ell [1 kHz, 20°C]: 3.7 P 14(055 CCY-3-01 7.50% -167 7.6 COY-3-02 1 1.50% al [1 kHz, 20°C]: AF.: [1 kHz, 20°C]: [pN, 20°C]: -3.8 CLY-3-02 5.00% 11.2 CPY-3-02 4.50% K3 [pN, 20°C]: 14.4 CY-3-02 14.00% Vo [pN, 20°C]: 2.05 PY-4-02 2.00% [mPas, 20°C]: 90 PGIY-2-04 3.00% B-20-05 4.00% CCPC-33 1.00% ExarnpLeN82 CC-3-V 14.50% Clearing point [°C]: 74 CC-V-V 20.00% An [589 rim, 20°C]: 0.1074 CC-3-V1 8.00% Ac [1 kHz, 20°C]: -3.0 CCY-3-01 5.50% K.1 [pN, 20°C]: 12.7 CCY-3-02 11.50%© K3 [pN, 20°C]: 15.4 CPY-3-02 4.00% Vo [pN, 20°C]: 2.42 PY-3-02 3.50% yi [mPas, 20°C]: 73 PP-1-2V1 7.00% B-20-05 4.00% PY-V2-02 5.00% CPY-V-02 6.00% CPY-V-04 5.00% CCY-V-02 6.00%

Example M83

CCP-V-1 4.00% Clearing point [°C]: 92.5 CCY-3-02 7.50% An [589 nrn, 20°C1: 0.1074 CLY-3-02 8.00% Ac [1 kHz, 20°C]: -2,5 UV-3-03 5.00% c [1 kHz, 20"Ci: 3.2 CPY-3-02 10.00% al [1 kHz, 20°C]: 5.7 PGIY-2-04 5,00% [pN, 20°C]: 16.4 P 14/065 -168 -PYP-2-3 B-20-05 CC-3-V CC-3 V1 6.00% 5.00% 41.50% 8.00% Ks [pN, 20t): 18.0 Vo [pN, 20°C]: 2.82 [mPa-s, 20°C]: 96

Example 84

CLY-3-02 10.00% Clearing point [C]: 80 CLY-3-03 1.50% An [589 rim, 20°C]: 0.1080 CPY-2-02 4.00% AE [1 kHz, 20°C]: -2.4 CPY-3-02 10.00% ell [1 kHz, 20°C]: 3.3 PGIY-2-04 5.00% ci. [1 kHz, 20')C]: 5.7 PYP-2-3 8.00% Ki [pN, 20°C]: 14.0 B-20-05 4.50% Ks [pN, 20°C]: 15.8 CC-3-V 44.50% Vo [pN, 20°C]: 2.68 CC-3-V1 8.00% yi [mPa.s, 20°C]: 80 CY-3-02 2.50% CY-5-02 2.00%

Example M85

CCP-V2-1 5.00% Clearing point ['C]: 79.5 CLY-3-02 10.00% An [589 nm, 20°C]: 0.1079 CPY-3-02 9.00% Ae. [1 kHz, 20°C]: -2.0 PGIY-2-04 2.50% ell [1 kHz, 20'0]: 3.2 PYP-2-3 8.00% El [1 kHz, 20°C]: 5.3 PYP-2-4 5.00% K1 [pN, 20°C]: 14.4 B-20-05 4.00% Ks [pN, 20°C]: 15.5 CC-3-V 43.00% Vo [pN, 20°C]: 2,92 CC-3-V1 7.50% mPa-s, 20°C]: 75 CY-3-02 6.00% P 14/055 Exams M86 -169 -CCY-3-01 4.00% Clearing point [°C]: 79.8 CCY-3-02 8.50% An [589 run, 20°C]: 0.1013 CCY-4-02 5.00% As [1 kHz, 20°C]: -3.7 CLY-3-02 10.00% c [1 kHz, 20'4 3.6 CLY-3-03 4.00% El [1 kHz, 20°C]: 7.3 PGIY-2-04 5.00% Ki [pN, 20°C]: 14.7 PYP-2-3 1,00% K3 [pN, 20'C]: 16.3 B-20-05 5.00% Vo [pN, 20°C]: 2.20 CC-3-V 34.50% 71 [rriPa,s, 20°C]: 97 CC-3-V1 8.50% CY-3-02 5,00% PY-3-02 9.50%

Example M87

CCY-3-02 7.00% Clearing point [°C]: 80 CCY-4-02 2.00% An [589 nit), 20°C]: 0.1009 CLY-3-02 8.00% As [1 kHz, 20"C]: -3.7 CLY-3.03 4.00% s [1 kHz, 20°C]: 3.6 CPY-2-02 3.00% ci [1 kHz, 20°C]: 7.3 CPY-3-02 8.00% Ki [pN, 20C]: 14A PGIY-2-04 5.00% Ka [pN, 20°C]: 16.4 PYP-2-3 1.00% Vo [pN, 20°C]: 2.21 B-20-05 5.00% yi [rnPa.s, 20"C]: 99 CC-3-V 35.00% CC-3-V1 8.00% CY-3-02 12.00% CY-5-02 2.00%

Example M88

CY-3-02 4.00% Clearing point VC]: 100 P 141055 -170 -CY-3-04 CCY-3-01 18.00% An [589 nm, 20°C]: Ac [1 kHz, 20°C]: 0.0955 5.00% -5.0 CCY-3-02 6.00% En [1 kl-iz, 20°C]: 3.8 CCY-3-03 6.00% e [1 kHz. 20°C]: 8.8 CCY-4-02 6.00% Kl [pN, 20°C]: 15.2 CLY-3-02 2.50% K3 [pN, 20°C]: 16.0 CPY-2-02 8.00% Vo [pN, 20°C]: 1.90 CC-4-V 18.00% yi [mPa.s, 20°C]: 226 CC-5-V 4.00% CH-33 3.00% CH-35 3,00% CCPC-33 4.50% CCPC-34 4.50% B-20-05 7,50%

Example M89

CCY-3-01 8.00% Clearing point NI 81.5 CCY-4-02 6.00% An [589 nm, 20°C]: 0,1075 CLY-3-02 10,00% Ac [1 kHz, 20°C]: -3.1 CPY-3-02 10.50% qi [1 kHz, 20°C): 3.5 PYP-2-3 9.00% Fa [1 kHz, 20°C]: 6.6 B-20-05 5.00% Ki [pN, 20C]: 14.3 CC-3-V 45.00% Ka [pN, 20°C]: 15.7 PY-3-02 5.00% Vo [pN, 20°C]: 2.38 Y-40-04 1.50% yi [mPa*s, 20C]: 90

Example F.)190

CC-3-V 35.00% Clearing point [°C1: 86 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1208 CCY-3-02 7,50% Ac [1 kHz, 20°C]: -4.2 CLY-3-02 8.00% Ell [1 kHz, 20°C]: 3.8 CPY-2-02 10.00% E.J. [1 kHz, 20°C]: 8.0 P 14/055 CPY-3-02 PY-3-02 PGIY-2-04 10.00% -171 - 14.3 12,50% Ki [pN, 20°C]: K3 [pN, 20°C]: Vo [pN, 20°C]: 15.6 8.00% 2.04 B 20-05 4.00% 71 [mPa-s, 20°C], 129

Example M91

CCY-3-01 7.00% Clearing point [°C]: 80 CLY-3-02 10.00% An [589 nm, 20°C]: 0.1141 CPY-2-02 10.00% AK [1 kHz, 20°C]: -4.0 CPY-3-02 10.00% c [1 kHz, 20°C]: 3.7 PYP-2-3 3.00% c[ [1 kHz, 20°C]: 7.7 B-20-05 4.00% K1 [pN, 20°C]: 14.9 CC-3-V 38.00% K3 [pN, 20°C]: 15.6 PY-1-04 10.00% Vo [pN, 20°C]: 2,09 PY-3-02 4.50% yi [mPa-s, 20°C]: 108 CCY-3-02 3.50%

Example M92

CCY-3-01 7,00% Clearing point [°C]: 90 CCY-4-02 4.00% An [589 nm, 20°C]: 0.1139 CLY-3-02 10.00% AE: [1 kHz, 20°C]: -4.2 CPY-2-02 10.00% co [1 kHz, 20C]: 3.7 CPY-3-02 10.00% CI [1 kHz, 20°C]: 7.9 PYP-2-3 2.50% K] EpN, 20C]: 16.2 B-20-05 4.00% K3 [pN, 20C]: 17.0 CC-3-V 35.50% Vo [pN, 20°C]: 2.12 PY-1-04 10.00% yl [mPa.s, 20°C]: 131 PY-3-02 1.00% CCY-3-02 6.00% P 14/055 -172 -Example M93 5.00% Clearing point [°C]: 801 8-20-05 BCH-32 7.00% An [589 nm, 20°C]: 0,1121 CC-3-V 34.50% As [1 kHz. 20°C]: -3.9 CCP-V-1 2.00% Ki [pN, 20°C]: 14.0 CCY-3-01 5.00% [pN, 20°C]: 14.5 CCY-3-02 4.00% Vo [pN, 20°C]: 2,03 CCY-4-02 2.00% [mPa-s, 20°C]: 104 CLY-3-02 8.00% CPY-2-02 10.00% CPY-3-02 7.00% PGIY-2-04 6.00% PY-3-02 2.00% Y-40-04 7.50% Exarrip e M94 CC:Y-3-01 7.00% Clearing point [°C]: 80.5 CCY-4-02 1.50% An [589 nm, 20°C]: 0.1070 CLY-3--02 10.00% At [1 kHz, 20°C]: -3.9 CPY-2-02 9.50% Kt [pN, 20°C]: 15.0 CPY-3-02 8.00% K3 [pN, 20°C]: 15.7 B-20-05 4,00% Vu [pN, 20°C]; 2.12 CC-3-V 40.00% yt [mPa-s, 20°C]: 104 PY-1-04 9,50% PY-3-02 4.50% CCY-3-02 8.00%

Example M95

CCY-3-01 7.00% Clearing point ['C]: 80.5 CLY-3-02 10.00% An [589 nm, 20°C]: 0.1140 CPY-2-02 10.00% As [1 kHz, 20°C]: -4.0 CPY-3-02 10.00% [pN, 20°C]: 14.8 P 14/055 PYP-2-3 B-20-05 CC-3-V 3.00% -173 15,6 5,00% Ks [pN, 20°C]: Vo [pN, 20C]: yi [mPa,s, 20°C]: 2.09 38.50% 107 PY-1-04 10.00% PY-3-02 3.00% CCY-3-02 3.50%

Example M96

CCY-3-01 7.00% Clearing point VC]: 78.5 CLY-3-02 10.00% An [589 nm, 20°C]: 0.1142 CPY-2-02 10.00% Ac [1 kHz, 20"C]: -4.0 CPY-3-02 10.00% Ki [pN, 20°C]: 14.3 PGIY-2-04 5.00% Ks [pN, 20°C]: 14.8 PYP-2-3 1.00% Vo [pN, 20°C]: 45.66 B-20-05 5.00% yi [mPa.s, 20°C]: 103 CC-3-V 39.50% PY-1-04 10.00% Y-40-04 1.50% CCY-3-02 1.00%

Example M97

CCY-3-01 7.00% Clearing point [&C]: 74.5 CLY-3-02 10.00% An [589 nrn, 0.1014 CPY-2-02 10.50% & [1 kHz, 20°C]: -3.7 CPY-3-02 9.50% [mPas, 20°C]: 89 B-20-05 3.50% CC-3-V 42.00% PY-1-04 10.00% Y-40-04 3.50% CCY-3-02 4.00% P 14%055 -174 -Example M98 T00% Clearing point [°C]: 76.5 CCY-3-01 CL_Y-3-02 10.00% An [589 nm, 20°C]: 0.1003 CPY-2-02 10.50% As [1 kHz, 20t]: -3.7 CPY-3-02 10.00% [pN, 20°C]: 14.0 B-20-05 5.00% Ks [pN, 20°C]: 14.7 CC-3-V 43.50% [pN, 20cC]: 2.09 PY-1-04 6.00% [mPa.s, 20C]: 89 Y-40-04 4.00% CCY-3-02 4.00%

Example k199

B-20-05 5.00% Clearing point [°C]: 80 CC-3-V 37.00% An [589 nm, 20°C]: 0.1094 CCP-V-1 4.50% Ac. [1 kHz, 20'C]: -3.7 CCY-3-01 5.00% cil [1 kHz, 20°C]: 3.7 CCY-3-02 6.00% ci [1 kHz, 20°C]: 7.4 CCY-4-02 5.00% K-1 [pN, 20)C]: 13.9 CLY-3-02 8.00% Ks [pN, 20°C]: 14,4 CPY-2-02 9.50% VQ [pN, 20°C]: 2.09 PGIY-2-04 6.00% [mPa.s, 20°C]: 106 PY-3-02 14.00%

Example M100

CCY-3-01 7.00% Clearing point [°C]: 90 CCY-4-02 4.00% An [589 nm, 20°C]: 0.1139 CLY-3-02 10.00% As [1 kHz, 20°C]: -4.2 CPY-2-02 10.00% Eli, [1 kHz, 20°C]: 3.7 CPY-3-02 10.00% at [1 kHz, 20°C]: 7.9 PYP-2-3 2.50% [pN, 20°C]: 16.2 B-20-05 4.00% K3 [pN, 20°C]: 17.0 P 11/055 -175 -CC-3-V 35.50% Vo [pN. 20°C]: 2.12 PY-1-04 10.00% yi [mPa.s, 20°C]: 131 PY-3-02 1.00% CCY-3-02 6.00%

Example M101

CC-3-V 35,50% Clearing point [°C]: 75.1 CC-3-V1 10.00% An [589 rim, 20°C]: 0.1096 CCP-3-1 1.50% AE [1 kHz, 20°C]: -3.2 CLY-3-02 10.00% Ell [1 kHz, 20°C]: 3.5 CLY-3-03 3,00% El, [1 kHz, 20°C]: 6.7 CPY-2-02 9.00% Ki [pN, 20°C]: 14.3 CPY-3-02 10.50% Ka [pN, 20°C]: 15.9 PY-3-02 16.50% Vo [pN, 20°C]: 2.37 PYP-2-3 1.00% yi [mPa.s, 20°C]: 84 B-20-05 3.00%

Example M102

For the preparation of a PS-VA mixture, 99.9% of the mixture according to Example M101 are mixed with 0.1% of the poiymerisable compound of the formula d

CS

10 15 20 P 14/055 -176 -

Example M103

For the preparation of a PS-VA mixture, 99.6% of the mixture according to Example M101 are mixed with 0.4% of the polymerisable compound of the formula 0 e 6

Example M 04

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M101 are mixed with 0.3% of the polymerisable compound of the formula

Example M105

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M101 are mixed with 0.2% of the polymerisable compound of the formula P 14/055 -177

Example M106

CC-3-V 36.50% Clearing point ['C]: 74.1 CC-3-V1 6,00% An [589 rim, 20°C]: 0.1087 CCY-3-01 7.00% Ac [1 kHz, 20°C]: -3.2 CCY-3-02 9.00% Ell [1 kHz, 20"C]: 3.6 CCY-5-02 2.00% El [1 kHz, 20°C]: 6.8 CLY-3-02 10.00% Ki [pN, 20°C]: 14.1 PY-1-04 3.00% Ka [pN, 20°C]: 15.7 PY-3-02 14.00% Vo [pN, 20°C]: 2,33 PYP-2-3 9.50% Ti [mPas, 20°C]: 87 B-20-05 3.00%

Example 07

For the preparation of a PS-VA mixture, 99.6% of the mixture according to Example M106 are mixed with 0,4% of the polymerisable compound of the formula

Example M108

CY-3-02 3.50% Clearing point [°C]: 74.3 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1096 CCY-3-02 2.50% As [1 kHz, 20°C]: -4.0 C PY-2-02 8.00% fil [1 kHz, 20°C]: 4.0 CPY-3-02 10.00% El [1 kHz, 20°C]: 8.0 PYP-2-3 4.00% [pN, 20°C]: 13.0 CLY-3-02 7.00% K3 [pN, 20"C]: 13.7 CLY-3-03 4.00% Vo [pN, 20"C]: 1.94 P14/055 -178 -Y-40-04 PGIY-2-04 B-20-05 7.00% 71 [rnPa,s, 20°C]: 96 7.00% 4.00% CC-3-V 38.00%

Example M109

CCY-3-01 6.00% Clearing point [°C]: 80 CCY-3-02 8.00% An [589 nm, 20°C]: 0.1010 CCY-4-02 4.00% As [1 kHz, 20°C]: -3.7 CCY-5-02 2.50% sli [1 kHz, 20°C]: 3.6 CLY-3-02 8.00% si_ [1 kHz, 20°C]: 7.3 CLY-3-03 4.00% K1 [pN, 20°C]: 15.0 PGIY-2-04 5.00% Ka [pN, 20°C]: 16.3 B-20-05 4.00% Vo [pN, 20°C]: 2.20 CC-3-V 36.00% yi [mPa-s, 20°C]: 98 CC-3-V1 7.50% CY-3-02 2.00% PY-3-02 12.00%

Example M110

CCY-3-02 6.00% Clearing point [°C]: 80.4 CCY-4-02 3.00% An [589 nal, 20°C]: 0A014 CLY-3-02 8.00% AE: [1 kHz, 20"C]: -3.7 CLY-3-03 2.00% Gil [1 kHz, 20°C]: 3.6 CPY-2-02 6.50% c. [1 kHz, 20°C]: 7.3 CPY-3-02 8.00% Ki [pN, 20'C]: 13.9 PGIY-2-04 5,00% Ka[pN,20°C]: 15.8 B-20-05 5.00% Vo [pN, 20°C]: 2.20 CC-3-V 36.00% [mPa-s, 20C]: 99 CC-3-V1 7.50% CY-3-02 11.00% CY-5-02 2.00% P 14/055 Example M111 -179 -BCH-32 3.00% Clearing point [C]: 74.7 CC-3-V 15.00% An [589 nm, 20°C]: 0.1086 CC-3-V1 9.00% Au [1 kHz, 20°C]: -3.2 CCH-34 4.00% Eii [1 kHz, 20°C]: 3.6 CCH-35 5.00% ru. [1 kHz, 20°C]: 6.7 CCP-3-1 8.00% K1 [pN, 20C]: 13.4 CCP-3-3 5.00% K3 [pN, 20'C): 15.6 CPY-2-02 10.50% V0 [pN, 20°C]: 2.31 CPY-3-02 10.50% yi[mPas, 20°C]: 109 CY-3-02 15.00% PY-3-02 12,00% 13-20-05 3.00%

Example M112

BCH-32 2.50% Clearing point [C]: 74.4 CCP-3-1 8.00% An [589 nm, 20°C), 0.1093 CCY-3-01 8.00% AE [1 kHz, 20C]: -3.1 CCY-3-02 11.00% [1 kHz, 20°C): 3.5 CCY-5-02 1,50% et [1 kHz, 20°C]: 6.6 PGIY-2-04 5.00% Ki [pN, 20°C]: 15.3 B-20-05 4.00% Ka [pN, 20)C]: 15.8 CC-3N 5.000/0 V0 [pN, 20°C]: 2.37 CC-3-V1 7.00% yi [mPa.s, 20°C]: 105 CCH-23 11.00% CC H-34 9.00% CCH-35 2.00% CY-3-02 2.50% PCH-301 1.00% PP-1-2V1 4.50% PY-3-02 18.00% P 141055 -180 -Example 6.50% 8.00% 11.00% 7.50% Clearing point rCj: An [589 nm, 20°C]: As [1 kHz, 20°C]: up, [1 kHz, 20°C]: 74.2 0.1086 -3.2 3.6 BCFI-32 CCP-3-1 CCY-3-02 CCY-5-02 PGIY-2-04 5.00% si. [1 kHz, 20°C]: 6.8 B-20-05 3.00% Ki [pN, 20°C]: 14.2 CC-3-V 10.00% K3 [pN, 20°C 15.9 CC-3-V1 8.00% Vo [pH, 20°C]: 2.35 CCH-23 10.00% In [mPa.s, 20°C]: 105 CCH-34 3.00% CY-3-02 9.00% PCH-301 1.50% PP-1-2V1 1,50% PY-3-02 16.00% Exam* M114 B-20-05 3.00% Clearing point rej: 74.5 CC-3-V 15.00% An [589 nm, 20°C]: 0.1092 CC-3-V1 10.00% As [1 kHz, 20°C]: -3.3 CCH-34 9.00% qt [1 kHz, 20°C]: 3,6 CCP-3-1 8.00% El [1 kHz, 20°C]: 6.9 CCP-3-3 6.00% Ki [pN, 20°C]: 14.0 CPY-2-02 8.50% Ka [pN, 20°C]: 15.7 CPY-3-02 11.00% Vo [pN, 20°C]: 2.31 CY-3-02 15.00% yl [mPa,s, 20°C]: 102 PGIY-2-04 4.00% PY-3-02 10.50% P 141055 Example M115 -181 -B-20-05 3.00% Clearing point [°C]: 74.5 BCH-32 2.00% An [589 rim, 20°C]: 0.1090 CC-3-V 37.00% Ai.: [1 kHz, 20°C]: -3.2 CC-3-V1 6.50% gli [1 kHz, 20°C]: 3.6 CCY-3-01 6.50% s.i. [1 kHz, 20C]: 6.8 CCY-3-02 3.50% Ki [pN. 20°C]: 14,1 CLY-3-02 10.00% Ks [pN, 20°C]: 15.9 CPY-3-02 10,50% Vo [pN, 20°C]: 2.35 PY-3-02 18.00% yi [mPa.s, 20°C]: 86 PYP-2-3 3.00%

Example M116

B-20-05 3.00% Clearing point [°C]: 74.6 CC-3-V 36,50% An [589 rim, 20°C]: 0.1092 CC-3-V1 9.00% Ac [1 kHz, 20°C]: -3.2 CCY-3-01 5.50% c [1 kHz, 20"C]: 3.5 CLY-3-02 10.00% ci [1 kHz, 20°C]: 6.7 CPY-2 -02 6.50% Ki [pN, 20°C]: 14.2 CPY-3-02 10.50% K3 [pN, 20°C]: 15.7 PY-3-02 16.00% Vo [pN, 20"C]; 2.34 PYP-2-3 3.00% 71 [mPa.s, 20°C]: 86

Example M117

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example Mill are mixed with 0.3% of the polymerisable compound of the formula P 141055 -182

F \ /

\ \ i \-----c 0 2---\ 0)-----0 -- ,--1,-*;.<, \____

Example M118

B-20-05 4.00% Clearing point [°C]: 74,6 BCH-32 0.50% An [589 nm, 20°C]: 0.1036 CC-3-V 33.00% As [1 kHz, 20°C]: -3,4 CC-3-V1 8.00% cii [1 kHz, 20°C]: 3.6 CCH-301 1.00% ci [1 kHz, 20°C]: 7.0 CCY-3-1 2.50% K1 [pN, 20C]: 13.4 CCY-3-01 9.00% Ka [pN, 20°C): 14.9 CCY-4-02 5.00% Vo [pN, 20°C]: 2.21 CPY-2-02 5.50% yi [rriPa.s, 20°C]: 92 CPY-3-02 12.50% CY-3-02 7.00% PY-1-04 1.50% PY-3-02 8.00% PYP-2-3 2.50%

Example M119

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M118 are mixed with 0.001% of Irganox 1076 and 0.3% of the polymerisable compound of the formula P 14/055

Example M120

CC-3-V 34.50% Clearing point [°C}: 747 CC-3-V1 10.00% An 1589 nm, 20°C]: 0.1094 CCP-3-1 1.00% Ac [1 kHz, 20°C]: -3.2 CLY-3-02 10.00% sii [1 kHz, 20°C]: 3.5 CLY-3-03 3.00% Ea [1 kHz, 20'C]: 6.8 CPY-2-02 8,00% Ki [pN, 20°C]: 13.9 CPY-3-02 10.50% K3 [pN, 20°C]: 15.8 CY-3-02 4.50% VG [pN, 20°C]: 2.34 PY-3-02 12.50% yi [mPa-s, 20°C]: 87 PYP-2-3 3.00% B-20-05 3.00%

Example M121

For the preparation of a PS-VA mixture, 99,6% of the mixture according to Example M120 are mixed with 0.4% of the polymerisable compound of the formula

Example M122

13-20-05 3.00% Clearing point [°C]: 74.8 BCH-32 2.50% An [589 nm, 20°C]: 0.1096 CC-3-V 42.00% Ac [1 kHz, 20°C]: -3.2 CC-3-V1 1.00% Eli [1 kHz, 20°C]: 3.5 C CY-3-02 9.00% t. [1 kHz, 20°C], 6.7 CLY-3-02 10.00% Ki [pN, 20'CI: 14.1 P 14/055 -184 -CPY-2-02 CPY-3-02 PY-3-02 PYP-2-3 2.00% Ka [pN, 20°C]: 15.7 10.50% Vo [pN, 20°C]: 2,34 85 17.00% 71 [mPa.s, 20'g 3.00%

Example M123

CY-3-02 3.00% Clearing point ['C]: 74.9 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1032 CCY-3-02 4.50% Ac [1 kHz, 20°C]: -4.0 CPY-2-02 8.00% EH [1 kHz. 20°C]: 3.9 CPY-3-02 10.00% ci_ [1 kHz, 20°C]: 7.9 CLY-3-02 7.00% Ki [pN, 20C]: 13.2 CLY-3-03 4.00% Ka [pN, 20°C]: 13.9 Y-40-04 7.00% VG [pN, 20°C]: 1.96 PGIY-2-04 7.00% yi [mPa.s, 20°C]: 92 B-20-05 4.00% CC-3-V 40.50% Examplgt: 24 CC-3-V 37.50% Clearing point [°C]: 75 CCY-3-01 5.00% An [589 nm, 20°C]: 0,1033 CCY-3-02 13.75% As [1 kHz, 20°C): -3.6 CCY-4-02 4.25% cii [1 kHz, 20°C]: 3.6 CPY-3-02 13.50% El [1 kHz, 20°C]: 7.2 CY-3-02 7,50% K1 [pN, 20°C]: 13.5 PY-3-02 15.50% K3 [pN, 20°C]: 15.8 PYP-2-3 3.00% Vo [pN, 20°C]: 1.17 r [mPas, 20°C]: 98 P 141055 -185 -

Example M125

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M124 are mixed with 0.3% of the polymerisable compound of the formula

Example M126

CCP-V-1 2.00% Clearing point ['C]: 75 CCY-3-01 7.00% An [589 nm, 20°C]: 0.1050 CCY-3-02 7.00% AE [1 kHz, 20°C]: -3.7 CCY-4-02 3.00% RH [1 kHz, 20'C]: 3.7 CCY-5-02 1.50% ci [1 kHz, 20°C]: 7.4 CLY-3-02 8.00% Ki [pN, 20°C]: 14.8 CLY-3-03 2.00% Ka [pN, 20°C]: 15.4 PGIY-2-04 5.00% Va [pN, 20'4 2.15 B-20-05 5.00% yi [mPa.s, 20°C]: 93 CC-3-V 34.00% CC-3-V1 8.00% PY-1-04 3.50% PY-3-02 14,00%

Example M127

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M126 are mixed with 0.001% of Irganox 1076 and 0.3% of the polymerisable compound of the formula 15 20 25 30 P 14/055 -186 -

Example M128

CCP-V-1 2.00% Clearing point [°C]: 75 CCY-3-01 5.00% An [589 rim, 20°C]: 0.1013 CCY-3-02 7.50% Ac [1 kHz, 20°C]: -3.7 CCY-4-02 3.50% 1-,:11[1 kHz, 20°C]: 3.7 CLY-3-02 10.00% i-u_ [1 kHz, 20°C]: 7.4 CLY-3-03 2.00% Kl [pN, 20°C]: 14.4 PGIY-2-04 5.00% K3 [pN, 20°C]: 15.5 B-20-05 5.00% Vo [pN, 20°C]: 2.15 CC-3-V 34.00% yi [mPa*s, 20°C]: 91 CC-3-V1 8,00% CY-3-02 6.00% PY-3-02 12.00%

Example M129

CCP-V-1 1.00% Clearing point [°C]: 75 CCY-3-01 7.00% An [589 nm, 20°C]: 0.1081 CCY-3-02 7.00% Au [1 kHz, 20°C]: -3.7 CCY-4-02 3.00% cit [1 kHz, 20°C]: 3.7 CCY-5-02 1.00% F.J. [1 kHz, 20°C]: 7.4 CLY-3-02 8.00% K1 [pN, 20°C]: 14.5 CLY-3-03 2.00% Ka [pN, 20°C]: 15.2 PGIY-2-04 5.00% Vo [pN, 20°C]: 2.14 PYP-2-3 2.50% yi [mPa.s, 20°C]: 93 B-20-05 5.00% CC-3-V 34.00% CC-3-V1 7.50% P 14/055 PY-1 -04 2.00% 187 -PY-3-02 15.00%

Example M130

CY-3-02 3.00% Clearing point [°C]: 75.1 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1021 CCY-3-02 3.00% Ac [1 kHz, 20°C]: -3.7 CPY-2-02 8.00% EA [1 kHz, 20°C]: 3.8 CPY-3-02 10.00% at [1 kHz, 20°C]: 7.5 CLY-3-02 7.00% K1 [pN, 20°C]: 13.3 CI_ Y-3-03 4.00% Ka [pN, 20°C]: 14.0 Y-40-04 6.00% Vo [pN, 20°C]: 2.04 PGIY-2-04 7.00% yi [mPa-s, 20°C]: 87 B-20-05 4.00% CC-3-V 43.00%

Example M131

CCY-3-01 8.00% Clearing point ['CI: 75,5 CCY-4-02 3.00% An [589 nm, 20°C]: 0.1024 CLY-3-02 8.00% As [1 kHz, 20°C]: -3.8 CLY-3-03 4.00% Elj [1 kHz, 20°C]: 3.7 CPY-2-02 7.50% at [1 kHz, 20°C]: CPY-3-02 3.00% B-20-05 4.00% CC-3-V 41.50% PY-1-04 5.00% PY-3-02 1 1.50% CCY-3-02 4.50% P 14/055 -188 -ig. Example. M1_32 6.50% 10.90% 10.00% 10.00% Clearing point [°C]: An [589 nm, 20'C]: As [1 kHz, 20°g till [1 kHz, 20°C]: Ed [1 kHz, 20°C]: Ki [pN, 20°C]: 79.5 CCY-3-01 CLY-3-02 CPY-2-02 CPY-3-02 PYP-2-3 B-20-05 5.50% 0.1070 4.00% -3.9 3.7 7.6 13.9 CC-3-V 37.00% K3 [pN, 20°C]: 15.5 CY-3-02 14.00% Va [pN, 20°C]: 2.09 CCY-3-02 1.50% yi [mPais, 20°C]: 104 CY-5-02 1.50%

Example IY1133

CCP-V2-1 5.00% Clearing point [C]: 79.5 CLY-3-02 10.00% An [589 nm, 20°C]: 0.1079 CPY-3-02 9.00% Ac [1 kHz, 20°C]: -2.0 PGIY-2-04 2.50% c [1 kHz, 20°C]: 3.2 PYP-2-3 8.00% El [1 kHz, 20°C]: 5.3 PYP-2-4 5.00% Ki [pN, 20°C]: 14.4 B-20-05 4.00% K3 [pN, 20'C]: 15.5 CC-3-V 43.00% Va fpN, 20C]: 2.92 CC-3-V1 7.50% yi [mPa.s, 2000]: 75 CY-3-02 6.00%

Example M134

COY-3-01 1.00% Clearing point [C]: 79.5 CLY-3-02 10.00% An [589 nm, 20C]: 0.1151 CL.Y-3-03 1.50% Ac [1 kHz, 20°C]: -4.0 CPY-2-02 10.00% [1 kHz, 20°C]: 3.7 CPY-3-02 10.00% E. [1 kHz, 20°C]: 7.7 PGIY-2-04 5.00% K1 [pN, 20'CI: 14.4 P 14/055 -189 -PYP-2-3 6.00% Ks [pN, 20°C]: 15,7 B--20-05 2.50% Vo [pN, 20°C]: 2.09 CC-3 V 27.00% yi [mPa.s, 20'C]: 115 CC-3-V1 8.00% CY-3-02 11.00% CY-5-02 6.50% CY-3-04 1.50%

Example 1V1135

CLY-3-02 10.00% Clearing point [°C]: 79,5 CLY-3-03 100% An [589 nrn, 20°C]: 0.1157 CPY-2-02 10.50% AE [1 kHz, 20°C]: -4.0 CPY-3-02 9.50% sil [1 kHz, 20°C]: 3.7 PGIY-2-04 5.00% gi [1 kHz, 20°C]: 7.7 PYP-2-3 5.50% Ki [pN, 20°C]: 14.6 B-20-05 5.00% K3 [pN, 20°C]: 15.5 CC-3-V 30.00% Vo [pN, 20°C]: 2.07 CC-3-V1 7.50% 71 [mPa.s, 20°C]: 111 CY-3-02 11,00% CY-5-02 4.00% ExameMi 36 CCY-3-01 4.00% Clearing point [°C]: 79.8 CCY-3-02 8.50% An [589 nrn, 20°C]: 0.1013 CCY-4-02 5.00% A [1 kHz, 20°C]: -3.7 CLY-3-02 10,00% r.IF [1 kHz, 20°C]: 3.6 CLY-3-03 4.00% LL [1 kHz, 20Gj: 7.3 PGIY-2-04 5.00% K1 [pN, 20°C]: 14.7 PYP-2-3 1.00% Ks [pN, 20°C]: 16.3 B-20-05 5.00% Vo [pN, 20°C]: 220 CC-3-V 34.50% 71 [mPa.s, 20°C]: 97 CC-3-V1 8.50% P 141055 -190 -CY-3-02 PY-3-02 5.00% 9.50% Examplp. 7 B-20-05 4.00% Clearing point [t]: 79.9 CC-3-V 32.00% An [589 nm, 20°C]: 0.1036 CCP-3-1 2.00% As [1 kHz, 20°C]: -4.4 CCY-3-02 8.00% Ell [1 kHz, 20°C]: 4.0 CCY-4-02 8.00% et [1 kHz, 20°C]: 8.3 CLY-3-02 6.50% Ki [pN, 20C], 13.4 CLY-3-03 6.50% K3 [pN, 20'C]: 14,4 CPY-2-02 8.00% VG [pN, 20°C]: 1.92 CPY-3-02 8.00% 71 [mPa.s, 20°C]: 89 CY-3-02 2.00% PY-3-02 10.00% Y-40-04 5,00%

Example M138

B-20-05 4.00% Clearing point [°C]: 79.9 CC-3-V 32.00% An [589 nm, 20°C]: 0.1058 CCP-3-1 2.00% As [1 kHz, 20C]: -4.6 CCY-3-02 8.00% K [pN, 20°C]: 14.3 CCY-4-02 8.00% Ks [pN, 20°C]: 15.1 CLY-3-02 6.50% Va [pN, 20°C]: 1.91 CLY-3-03 6.50% yi [mPas, 20°C]: 113 CPY-2-02 8.00% CPY-3-02 8.00% CY-3-02 2.00% PY-3-02 10.00% Y-40-04 5.00% P 14/055 Example M139 -191 -BCH-32 5.00% Clearing point [°C]: 80.4 CC-3-V 32.50% An [589 nm, 20°C]: 0.1099 CCY-3-01 5,00% Ar: [1 kHz, 20°C]: -3.7 CCY-3-02 8.00% qi[1 kHz, 20°C]: 3.9 CCY-4-02 2.50% [1 kHz, 20°C]: 7.6 CLY-3-02 8.00% K1 [pN, 20°C]: 13.3 CPY-2-02 7.00% K3 [pN, 20°C]: 14.3 CPY-3-02 10.00% Vo [pN, 20°C]: 2.05 PGIY-2-04 7.00% 71 [mPa,s, 20°C]: 108 PY-3-02 7.00% Y-40-04 8.00%

Example M140

B-20-05 5.00% Clearing point [CC]: 80 CC-3-V 37.00% An [589 nrn, 203C]: 0.1094 4.50% Ac [1 kHz, 20°C]: -3.7 CCY-3-01 5.00% Ell [1 kHz, 20°C]: 3.7 CCY-3-02 6.00% ril, [1 kHz, 20*C]: 7.4 * CCY-4-02 5.00% K1 [pN, 20°C]: 13.9 CLY-3-02 8.00% K3 [pN, 20°C]: 14.4 CPY-2-02 9,50% Vo [pN, 20°C]: 2.09 PGIY-2-04 6.00% 71 [mPa.s, 20°C]: 106 PY-3-02 14.00%

Example M141

B-20-05 5.00% Clearing point [°C]: 80.1 BCH-32 7.00% An [589 rim, 20°C]: 0.1096 CC-3-V 34.50% At: [1 kHz, 20°C]: -3.7 CCP-V-1 2.00% [1 kHz, 20C]: 3.9 CCY-3-01 5,00% ci [1 kHz, 20°C]: 7.6 P 14/055 -192 -CCY-3-02 4.00% Ki [pN, 20C]: 13.3 CCY-4-02 2.00% Ka [pN, 20°C]: 13.7 CLY-3-02 8.00% Vo [pN, 20°C]: 2.04 CPY-2-02 10.00% [mPa*s, 20°C]: 104 CPY-3-02 7.00% PGIY-2-04 6.00% PY-3-02 2.00% Y-40-04 7.50%

Example M142

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M140 are mixed with 0.3% of the polymerisable compound of the formula Ex _ple_M143 For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M140 are mixed with 0.25% of the polymerisable compound of the formula P 14/055 -193 or, 0 0.

0-\ '7k /it/ \==5/

-

Example M144

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M140 are mixed with 0.2% of the polymerisable compound of the formula

Example M145

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M141 are mixed with 0.3% of the polymerisable compound of the formula C.;\ /s\, P 141055 -194 -

Example M146

For the preparation of a PS-VA mixture, 99,75% of the mixture according to Example M141 are mixed with 0.25% of the polymerisable compound of the formula

FO Cad \

Example 11147

For the preparation of a PS-VA mixture. 99.75% of the mixture according to Example M141 are mixed with 0.3% of the polymerisable compound of the formula

Example M148

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M141 are mixed with 0.2% of the polymerisable compound of the formula P 141055 -195 -Si

Example M149

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M141 are mixed with 0.3% of the polymerisable compound of the formula / \ \ --SC; \') (21 /\l--QmpIM1Q For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M141 are mixed with 015% of the polymerisable compound of the formula o, -o \--7 * P 14/055 Exam I 7.00% -196 - 80 Clearing point ["C]: CCY-3-01 CCY-3-02 6.00% An [589 nm, 20°C]: 0.1073 CCY-4-02 6.50% Ac [1 kHz, 20°C]: -3.9 CCY-5-02 3.00% c [1 kHz, 20°C]: 3.7 CLY-3-02 10,00% s± [1 kHz, 20°C]: 7.6 PGIY 2 04 5.00% 71 [mPa*s, 20"C]: 90 PYP-2-3 2.00% B-20-05 5,00% CC-3-V 33.50% CC-3-V1 7.00% PY-1-04 5.00% PY-3-02 10.00%

Example M152

CLY--3-02 10.00% Clearing point [t]: 80 CLY-3-03 1.50% An [589 nm, 20°C]: 0.1080 CPY-2-02 4.00% Ac [1 kHz, 20"C]: -2.4 CPY-3-02 10.00% cif [1 kHz, 20C]: 3.3 PGIY-2-04 5.00% c..[. [1 kHz, 20°C]: 5.7 PYP-2-3 8.00% Ki [pN, 20°C]: 14.0 B-20-05 4.50% K3 [pN, 20°C]: 15.8 CC-3-V 44.50% VD [pN, 20°C]: 2.68 CC-3-V1 8.00% 71 [mPa-s, 20°C]: 80 CY-3-02 2.50% CY-5-02 2,00%

Example M153

CCY-3-02 7.00% Clearing point [°C]: 80 CCY-4-02 2.00% An [589 nm, 20°C]: 0.1009 CLY-3-02 8.00% 6s [1 kHz, 20°C]: -3.7 P 141055 CLY-3-03 4.00% -197 - 3.6 CPY-2-02 3.00% Eli [1 kHz, 20'CI: 7.3 14A CPY-3-02 8.00% ica [1 kHz, 20°C]: K1 [pN, 20°C]: PGIY-2-04 5,00% K3 [pN, 20°C]: 16.4 PYP-2-3 1.00% Va [pN, 20°C]: 2.21 B-20-05 5.00% yi [mPais, 201)C]: 99 CC-3-V 35.00% CC-3-V1 8,00°A CY-3-02 12.00% CY-5-02 2.00%

Example M154

CC-3-V 37.50% Clearing point [°C]: 80.2 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1097 CCY-3-02 3.00% At: [1 kHz, 20°C]: -3.9 CCY-4-02 7.00% Eli [1 kHz, 20°C): 3.7 CLY-3-02 8.00% [1 kHz, 20°C]: 7.6 CPY-2-02 10.00% Ki [pN, 20°C]: 13.5 CPY-3-02 8,00% K3 [pN, 20°C]: 14.5 PY-1-04 3.50% Vo [pN, 20°C]: 1.08 PY-3-02 12.00% yi [mPa.s, 20°C]: 110 PGIY-2-04 2.00% B-20-05 4.00%

Example. M155.

B-20-05 4,00% Clearing point [°C]: 80.4 CC-3-V 24.50% An [589 nm, 20°C]: 0.1030 r' r' 5.00% Ai; [1 kHz, 20°C]: -4.4 CCP-3-1 3.00% Eli [1 kHz, 20°C]: 4.0 CCY-3-02 8.00% at [1 kHz, 20°C]: 8.4 CCY-4-02 8.00% Ki [pN, 20°C]: 13.3 CLY-3-02 6.00% Ka [pN, 20°C]: 14.3 P 14/055 -198 -CLY-3-03 6.00% Vo [pN, 20°C]: 1.91 CPY-2-02 6.50% yi[mPa,s, 20°C]: 96 CPY-3-02 8.00% CY-3-02 8.00% PYP-2-3 5.00% Y-40-04 8.00%

Example M156

BCH-32 0.50% Clearing point VC]: 80.4 CC-3N 37,00% An [589 nm, 20°C]: 0.1195 CCY-3-01 5.00% At-2. [1 kHz, 20°C]: -3.9 CCY-3-02 3.50% c [1 kHz, 20°C]: 3.8 CLY-3-02 8.00% El [1 kHz, 20°C]: 7.7 CPY-2-02 10.00% Ki [pN, 20°C]: 13.5 CPY-3-02 10.00% Ka [pN, 20°C]: 14.5 PY-3-02 14.00% Vo [pN, 20°C]: 2.04 PGIY-2-04 8.00% 71 [mPa.s, 20C]; 114 B-20-05 4,00%

Example M157

CCY-3-02 6.00% Clearing point [°C]: 80.4 CCY-4-02 3.00% An [589 nm, 20°C]: 0.1014 CLY-3-02 8.00% AE [1 kHz, 20°C]: -3.7 CLY-3-03 2.00% Edi [1 kHz, 20°C]: 3.6 CPY-2-02 6.50% s41 kHz, 20°C]: 7.3 CPY-3-02 8.00% Ki [pN, 20°C]: 13.9 PUN-2-04 5.00% K3 [pN, 20°C]: 15.8 B-20-05 5.00% Vo {pN, 20°C]: 2.20 CC-3-V 36.00% 71 [irPas, 20°C]: a9 CC-3-V1 7.50% CY-3-02 11.00% CY-5-02 2.00% P 141055 Example M158 -199 -CC-3-V 25.00% Clearing point [°C]: 80.5 CC-3-V1 7.00% An [589 rim, 20"C]: 0.0995 CCP-3-1 7.00% Au [1 kHz. 20'C]: -3.8 CCY-3-Q1 4.50% c [1 kHz, 20°C]: 3.7 CCY-3-02 6.50% ci [1 kHz, 20°C]: 7,5 CCY-4-02 5.00% Ki [pN, 20°C]: 13.7 CCY-5-02 4.00% KS [pN, 20°C]: 15.8 CLY-3-02 8.00% Vo [pN, 20°C]: 2.12 CY-3-02 12.00% yi [mPa,s, 20°C]: 111 CY-3-04 4.00% PY-3-02 7.00% PGIY-2-04 6.00% B-20-05 4.00%

Example M159

CC-3-V 26.00% Clearing point [°C]: 80.8 CC-3-V1 7.00% An [589 nrn, 20°C]: 0.1099 CCP-3-1 6.00% Ac [1 kHz, 20°C]: -3.9 CCY-3-01 2.00% Er, [1 kHz, 20°C]: 3.7 CCY-3-02 7.00% El. [1 kHz, 20'C]: 7.6 CCY-4-02 7.00% Ki [pN, 20'C]: 14.2 CCY-5-02 4.00% K3 [pN, 20°C]: 15.6 CLY-3-02 8.00% VS 1pN, 20°C]: 2.12 CY-3-02 4.00% 71 [mPa.s, 20°C]: 121 PY-1-04 5.00% PY-3-02 12.00% PGIY-2-04 8.00% B-20-05 4.00% P 14/055 -200 -Example M160 CCY-3-01 8.00% Clearing point NI 82 CCY-3-02 1.00% An [589 nm, 20°C]: 0.1081 CLY-3-02 10.00% Ac [1 kHz, 20°C]: -3.5 CPY-2-02 0.50% c [1 kHz, 20'Cj: 3.6 CPY-3-02 10.00% GI [1 kHz, 20°C]: 7.2 PGIY-2-04 5.00% K1 [pN, 20°C]: 14,4 PYP-2-3 1.00% K3 [pN, 20°C1: 15.3 B-20-05 5.00% Vo [pN, 20°C]: 2.20 CC-3-V 44.50% r [mPa-s, 20°C]: 95 PY-1-04 4.00% Y-40-04 2.00%

Example M161

B-20-05 4.00% Clearing point ["C]: 84.6 CC-3-V 31.00% An [589 nm, 20°C]: 0.1069 CC-3-V1 4.00% Ac [1 kHz, 20°C]: -3.8 CCP-3-1 3.00% cu [1 kHz, 20ct]: 3.7 CCY-3-02 8.50% 6.i. [1 kHz, 20°C]: 7.5 CCY-4-02 6.00% Ki [pN, 20°C]: 14.1 CLY-3-02 6.00% Ka [pN, 20°C]: 15.0 CLY-3-03 6.00% Vo [pN, 20°C]: 2.09 CPY-2-02 8.00% yi [mPa.s, 20°C]: 88 CPY-3-02 8.00% P1-3-02 8.00% PY-4-02 3.00% PYP-2-4 1.50% Y-40-04 3.00%

Example M162

CCY-3-02 10.00% Clearing point [°C]: 85 P 141055 CCY-5-02 7.00% -201 - 0,1047 CPY-2-02 10.00% An [589 nm, 20°C]: 4c [1 kHz, 20°C]: -3.4 CPY-3-02 10.00% 4[1 kHz, 20°C]: 3.5 PYP-2-3 5.50% til. [1 kHz, 20°C]; 6.9 B-20-05 4.00% Ki [pN, 20°C]: 14.6 CC-3-V 32.00% K3 [pN, 20°C]: 17.4 CC-3-V1 10.00% Vo [pN, 20°C]: 2.37 CY-3-02 10.00% 71 [mPa-s, 20°C]: 108 CY-5-02 1.50%

Example M163

CC-3-V 35.00% Clearing point [°C]: 86 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1208 CCY-3-02 7.50% As [1 kHz, 20°C]: -4.2 CLY-3-02 8.00% cil [1 kHz, 20C]: 3.8 CPY-2-02 10,00% &I_ [1 kHz, 20°C]: 8.0 CPY-3-02 10.00% K1 [pN, 20°C]: 14.3 FY-3-02 12.50% Ka [pN, 20°C]: 15.6 PGIY-2-04 8.00% Vo [pN, 20°C]: 2.04 B-20-05 4.00% 71 [mPa.s, 20°C]: 129

Example M164

CC-3-V 35.00% Clearing point [°C]: 86.1 CCY-3-01 5.00% An [589 nm, 20°C]: 0.1103 CCY-3-02 6.00% Ac [1 kHz, 20C]: -4.1 CCY-3-03 2.00% [1 kHz, 20°C]: 3.7 CCY-4-02 6.00% 6.1_ [1 kHz, 20°C]: 7.8 CLY-3-02 8.00% K1 [pN, 20°C]: 14.2 CPY-2-02 10.00% Ka [pN, 20°C]: 15.7 tn- CPY-3-02 9.50% Vo [pN, 20°C]: 2.06 PY-1-04 3.50% yi [mPa.s, 20°C]: 125 PY-3-02 11,00% P 14/055 B-20-05 4.00% -202 -

Example M165

CCY-3-01 3.50% Clearing point [°C]: 86.5 CCY-3-02 4.50% An [589 nm, 20°C]: 0.1053 CLY-3-02 9.00% AE [1 kHz, 20°C]: -3.4 CPY-2-02 10.50% Ell [1 kHz, 20°C]: 3.5 CPY-3-02 11.00% El [1 kHz, 20°C]: 6.9 PYP-2-3 3.50% Kl [pN, 20°C]: 14.8 CC-3-V 32.00% Ks [pN, 20°C]: 17.8 CC-3-V1 12.00% Vo [pN, 20°C]: 2.41 CY-3-02 10.00% yi [rnPa.s, 20°C]: 105 8-20-05 4.00%

Example_M166

CC-3-V 22,50% Clearing point [°C]: 97.2 CC-3-V1 7.00% An [589 nm, 20°C]: 0.1005 CCP-3-1 2.00% Al; [1 kHz, 20'C]: -4.6 CCY-3-01 5.00% Ell [1 kHz, 20°C): 3.6 CCY-3-02 7.00% El [1 kHz, 20°C]: 8.2 CCY-3-03 5.00% Ki [pN, 20°C]: 15.8 CCY-4-02 7.00% K3 [pN, 20°C]: 18.6 CCY-5-02 5.00% Vo [pN, 20°C]: 2.13 CLY-3-02 8.00% yi[mPa,s, 20°C): 172 CPY-3-02 8.00% CY-3-02 12.00% CY-5-02 4.50% PGIY-2-04 3.00% B-20-05 4.00% P 14/C55 Example M167 -203 -CC-3-V 21.50% Clearing point [°C]: 98.6 CC-3-V1 7.00% An [589 nm, 20°C]: 0.1103 CCP-3-1 3.00% At: [1 kHz, 20"C]: -4.6 CCY-3-01 5.00% sir [1 kHz., 20'C]: 3.7 CCY-3-02 7.00% u± [1 kHz, 20°C]: 8.3 CCY-4-02 7.00% Ki [pN, 20°C]: 16.3 CCY-5-02 4.00% Ks [pN, 20°C]: 18.7 CLY-3-02 8.00% Vo [pN, 20°C]: 2.12 CPY-3-02 10.50% ri [mPa-s, 20°C]: 175 CY-3-02 12.00% CY-5-02 3.00% PUY-2-04 8.00% B-20-05 4.00%

Example M168

CC-3-V1 7,00% Clearing point [°C]: 109 CCP-3-1 10.00% An [589 nm, 20°C]: 0.1012 CCP-3-3 6.50% Au [1 kHz, 20°C]: -5.2 CCY-3-01 5.00% ill [1 kHz, 20°C]: 3.7 CCY-3-02 6,00% u_i [1 kHz, 20°C]: 8.9 CCY-3-03 7.50% Ki [pN, 20"C]: 18.2 CCY-4-02 8.00% Ks [pN, 20°C]: 21,4 CCY-5-02 4.00% Vo [pN, 20°C]: 2.13 CCY-3-1 8.00%. 71 (mPa-s, 20°C]: 287 CLY-3-02 8.00% CY-3-02 12.00% CY-3-04 14.00% B-20-05 4.00% P 14/055 Example M169 10.75% -204 - 111.8 Clearing point ["C]: CC-3-V CC-3-V1 3,50% An [589 nm, 20°C]: 0.1104 CCP-3-1 7.50% Ac [1 kHz, 20°C]: -5.2 CCY-3-01 5.00% oil [1 kHz, 20°C]: 37 CCY-3-02 7.50% Fi..i [1 kHz, 20°C]: 8.9 CCY-4-02 7.50% Ki [pN, 20°C]: 17.9 CCY-5-02 4.50% K3 [pN, 20°C]: 21.0 CLY-3-02 8.00% Vo [pN, 20°C]: 2.13 CPY-3-02 8.00% p [mPais, 20°C]: 267 CY-3-02 12.00% CY-5-02 5.00% PG1Y-2-04 4.00% B-20-05 4.00% CCP-3-3 1.75% CCY-3-03 3.00% CCY-2-1 4.00% CCY-3-1 4.00%

Example M170

CCP-3-1 12.00% Clearing point [°C]: 126 CCP-3-3 3.50% An [589 nm, 20°C]: 0.1103 CCY-3-01 5.00% AC [1 kHz, 20°C]: -5.8 CCY-3-02 8.00% 'ail [1 kHz. 20°C]: 3.7 CCY-3-03 6.00% si [1 kHz, 20°C]: 9.5 CCY-4-02 8.00% Ki [pN, 20°C]: 20.3 CCY-5-02 5.00% K3 [pN, 20°C]: 23.8 CCY-2-1 8.00% Vo [pN, 20°C]: 2.14 CCY-3-1 8.00% p [mPa.s, 20C]: 422 CLY-3-02 8.00% CPY-3-02 5.50% CY-3-02 12.00% CY-5-02 7.00% P 141055 -205 -B-20-05 4.00%

Example M171

CC-3-V 12.50% Clearing point [°C]: 110.3 CC-3-V1 6,50% An [589 nm, 20°C]: 0.1100 CCP-3-1 12.50% As [1 kHz, 20°C]: -4.8 CCY-3-01 5.00% CH [1 kHz, 20°C]: 3.6 CCY-3-02 7.50% Ea [1 kHz, 20°C]: 8.4 CCY-4-02 3.00% Ki [pN, 20C]: 17.9 CCY-5-02 3.50% Ka [pN, 20°C]: 20.8 CLY-2-04 5.00% Vu [pN, 20°C]: 2.22 CLY-3-02 7.00% to [mPais, 20°C]: 233 CLY-3-03 6.00% CPY-3-02 8.00% CY-3-02 12.00% CY-5-02 4.00% PGIY-2-04 3.50% B-20-05 4.00% For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M171 are mixed with 0.3% of the polymerisable compound of the formula

F

\ / 1 0 \--0-, ^-____, %, / F 141055 -206 -g mplg_M 173 For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M171 are mixed with 0.25% of the polymerisable compound of the formula

Example M174

CC-3-V 14.00% Clearing point [°C]: 111 CC-3-V1 6.00% An [589 nm, 20°C]: 0.1102 CCP-3-1 7.00% Ac [1 kHz, 20°C]: -5.2 CCY-3-01 5.00% co [1 kHz, 20°C]: 3.7 CCY-3-02 8.00% n_i_ [1 kHz, 20'C]: 8.9 COY-402 5.50% Ki [pN, 20'C]: 18.5 CCY-5-02 2.00% K3 [pN, 20°C]: 20.5 CLY-2-04 7.00% Va [pN, 20°C]: 2.10 CLY-3-02 8.00% yi [mPas, 20°C]: 241 CLY-3-03 7.00% CPY-3-02 10.00% CY-3-02 12.00% CY-5-02 2.50% PGIY-2-04 2.00% B-20-05 4.00%

Example M175

CC-3V 12.25% Clearing point [T]: 110.9 CC-3-V1 6.00% An [589 nm, 20°C]: 0.1101 CCP-3-1 11.00% Ac [1 kHz, 20C]: -5.0 CCY-3-01 5.00% r.:11[1 kHz, 20°C]: 3.6 P 141055 -207 -CCY-3-02 7.75% F.J_ [1 kHz, 20°C]: 8.6 CCY-4-02 5.00% Ki [pN, 20°C]: 18.5 CCY-5-02 3.50% Ka [pN, 20°C]: 20,8 CLY-2-04 5,00% Vo [pN, 20°C]: 2.16 CLY-3-02 7.00% yt [mPa.s, 20°C]: 240 CLY-3-03 6.00% CPY-3-02 8.00% CY-3-02 12.00% CY-5-02 4.25% PGIY-2-04 3.25% B-20-05 4.00%

Example M176

For the preparation of a PS-VA mixture, 99.8% of the mixture according o Example M174 are mixed with 0.2% of the polymerisable compound of the formula Exampte M177 For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M174 are mixed with 0,25% of the polymerisable compound of the formula P 14/055 -208 -

Example M178

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M174 are mixed with 0.3% of the polymerisable compound of the formula

Example M179

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M174 are mixed with 0.3% of the polymerisable compound of the formula

Example M180

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M174 are mixed with 0.25% of the polymerisable compound of the formula P 14/055 -209 -0%--4/ rk) 1\\> d 0 / t0

Example M181

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M174 are mixed with 0.3% of the polymerisable compound of the formula

Example M182

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M175 are mixed with 0.25% of the polymerisabie compound of the formula P 14/055 -210 -

Example r

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M175 are mixed with 0,25% of the polymerisable compound of the formula 0

Example M184

For the preparation of a PS-VA mixture, 99.75% of the mixture ccording to Example M175 are mixed with 0.25% of the polymerisable compound of the formula

Example M185

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M175 are mixed with 0.25% of the polymerisable compound of the formula P 141055

Example M186

For the preparation of a PS-VA mixture, 99.8% of the mixture according to Example M175 are mixed with 0.3% of the polymerisable compound of the formula

Example_ 187

For the preparation of a PS-VA mixture, 991% of the mixture according to Example M166 are mixed with 0.3% of the polymerisable compound of the formula P 14/055 -212 -

Example M188

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M167 are mixed with 0.3% of the polymerisable compound of the formula 0

Example M189

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M167 are mixed with 0.3% of the polymerisable compound of the formula

Example M190

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M167 are mixed with 0.3% of the polymerisable compound of the formula 0 /1--0 P 14/055 -213 -

Example M191

CC-3-V 12.00% CC-3-V1 5,50% CCP-3-1 9.50% CCY-3-01 5.00% CCY-3-02 8.00% CCY-4-02 7.00% CCY-5-02 3.50% CLY-2-04 5.00% CLY-3-02 7.00% CLY-3-03 6.00% CPY-3-02 8.00% CY-3-02 12.00% CY-5-02 4.50% PGIY-2-04 3.00% 8-20-05 4.00% Clearing point [QC]: 111.6 An [589 nm, 20°C]: 0.1101 Ac [1 kHz, 20°C]: -5.2 q [1 kHz, 20°C): 3.7 El. [1 kHz, 20°C): 8.9 Ki [pN, 20°C]: 18.6 l<3. [pN, 20°C1: 20.6 Vo [pN, 20°C]: 2.11 vi [mPa.s, 20°C]: 252

Example M192

For the preparation of a PS-VA mixture, 99.7% of the mixture according o Example M191 are mixed with 0.3% of the polymerisable compound of the formula P 141055 -214 -

Example M193

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M191 are mixed with 025% of the polymerisable compound of the formula i 0 Exa, 194 For the preparation of a PS-VA mixture, 99/5% of the mixture according to Example M191 are mixed with 0.25% of the polymerisable compound of the formula

Example M195

CC-3-V 45.50% CCY-3-01 5.50% CCY-3-02 11.00% CPY-2-02 9,00% CPY-3-02 10.50% CY-3-02 3.00% PY-3-02 11.00% B-30-05 2.50% B-30-04 2.50% Clearing point [°C]: 73.5 An [589 nm, 20°C]: 0.1013 As [1 kHz, 20°C]: -3.4 [pN, 20°C]: 13.1 K3 [pN, 20°C]: 14.4 71 [mPa.s, 20°C]: 80 F' 14/055 -215 -

Example M196

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M195 are mixed with 0.25% of the polymerisabie compound of the formula F \\ //7)--- 6/.

p "__0 \cm/

Example 9

For the preparation of a PS-VA mixture, 99.7% of the mixture according to Example M195 are mixed with 0.3% of the polymerisable compound of the formula 0 --A 0 / 0 -,

Example M198

C0-3-V 41.00% Clearing point [°C]: 73.9 CCY-3-01 6.00% An [589 nm, 20°C]: 0.1011 CCY-3-02 11.00% Ac [1 kHz, 20°C1: -3.6 CCY-4-02 6.00% Kt [pN, 20°C]: 13.2 CPY-3-02 4.00% Ka [pN, 20°C]: 14.6 CPY-3-02 11.00% yi [mPa.s, 20°C]: 90 CY-3-02 3.00% PY-3-02 12.00% P 14/055 -216 -B-3-03 6.00%

Example M199

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M198 are mixed with 0.25% of the polymerisable compound of the formula ("/ FO o

Example M200

For the preparation of a PS-VA mixture, 99.75% of the mixture according to Example M198 are mixed with 025% of the polymerisable compound of the formula