GB2533105B - Solectron field effect transistor and inverter - Google Patents

Solectron field effect transistor and inverter Download PDF

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Publication number
GB2533105B
GB2533105B GB1421866.3A GB201421866A GB2533105B GB 2533105 B GB2533105 B GB 2533105B GB 201421866 A GB201421866 A GB 201421866A GB 2533105 B GB2533105 B GB 2533105B
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GB
United Kingdom
Prior art keywords
solectron
inverter
field effect
effect transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1421866.3A
Other versions
GB201421866D0 (en
GB2533105A (en
Inventor
Garcia Velarde Manuel
Guy Wilson Edward
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Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB1421866.3A priority Critical patent/GB2533105B/en
Publication of GB201421866D0 publication Critical patent/GB201421866D0/en
Publication of GB2533105A publication Critical patent/GB2533105A/en
Application granted granted Critical
Publication of GB2533105B publication Critical patent/GB2533105B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
GB1421866.3A 2014-12-09 2014-12-09 Solectron field effect transistor and inverter Active GB2533105B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1421866.3A GB2533105B (en) 2014-12-09 2014-12-09 Solectron field effect transistor and inverter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1421866.3A GB2533105B (en) 2014-12-09 2014-12-09 Solectron field effect transistor and inverter

Publications (3)

Publication Number Publication Date
GB201421866D0 GB201421866D0 (en) 2015-01-21
GB2533105A GB2533105A (en) 2016-06-15
GB2533105B true GB2533105B (en) 2020-05-20

Family

ID=52425676

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1421866.3A Active GB2533105B (en) 2014-12-09 2014-12-09 Solectron field effect transistor and inverter

Country Status (1)

Country Link
GB (1) GB2533105B (en)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Controlling fast electron transfer at the nano-scale by solitonic excitations along crystallographic axes; Chetverikov A P; Ebeling W; Velarde M G; The European Physical Journal B ; Condensed Matter Physics; vol 85; Nr 8; 2012; pages 1-8; ISSN 1434-6036 *
Nonlinear soliton-like excitations in two-dimensional lattices and charge transport; Chetverikov A P; Ebeling W; Velarde M G; EUROPEAN PHYSICAL JOURNAL. SPECIAL TOPICS, THE, Vol 222; Nr 10; pages 2531-2546; 2013; ISSN 1951-6355 *

Also Published As

Publication number Publication date
GB201421866D0 (en) 2015-01-21
GB2533105A (en) 2016-06-15

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