GB2512069A - Aluminium doped tin oxide coatings - Google Patents
Aluminium doped tin oxide coatings Download PDFInfo
- Publication number
- GB2512069A GB2512069A GB1304966.3A GB201304966A GB2512069A GB 2512069 A GB2512069 A GB 2512069A GB 201304966 A GB201304966 A GB 201304966A GB 2512069 A GB2512069 A GB 2512069A
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- GB
- United Kingdom
- Prior art keywords
- aluminium
- substrate
- coating
- source
- tin oxide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
A method is disclosed for the growth of aluminium doped tin oxide on a substrate 4, particularly glass, by chemical vapour deposition (CVD) using aluminium 2-ethylethanoate as a chemical precursor serving as a source of aluminium. The method comprises the steps of preparing a precursor gas mixture containing a source of tin, a source of oxygen, water, and the aluminium 2-ethylethanoate, acting as the source of aluminium, and delivering 1 the precursor gas mixture to a coating chamber opening onto the substrate 4. Preferably, the precursor gas mixture comprises dimethyltin dichloride, oxygen, water and aluminium 2-ethylethanoate, and the mixture is maintained at a temperature between 180 and 200ºC prior to introduction to the substrate. The coating chamber may be a static chamber (as shown) or may be a dynamic coating apparatus for CVD coating of a moving substrate, e.g. during a float gas production method (figure 2).
Description
Aluminium Doped Tin Oxide Coatings The invention concerns a process for growth of aluminium doped tin oxide on a substrate.
Doping of materials such as semiconductors in order to modify their properties such as resistivity or absorption is well known. Aluminium doped tin oxide is of interest in a number of applications including its use as a buffer layer material for CdTe based photovoltaic (PV) devices.
As uscd hcrcin, thc term aluminium doped tin oxidc, and thc abbreviation Sn02:Al refer to a mixture of tin and aluminium oxides wherein the tin oxide forms the major part. Typically the aluminium content of these materials is less than 10%.
Such devices typically comprise a heterjunction formed by layers of CdS and CdTe semiconductor, deposited on a transparent substrate. The substrate is typically non-conducting (e.g. glass) so a thin layer of transparent conductive oxide (TCO) is included between the substrate and the semiconductor layers to serve as a front contact current collector.
Inclusion of a buffer layer between the semiconductorjunction structure and the TCO layer offers a number of advantages: for example, formation of localized junctions within the TCO is avoided; electrical shunting through the semiconductors is reduced and adhesion between the layers is improved. US 6,169,246 describes the use of zinc stannate buffer layers in PV devices.
Various approaches to production of aluminium doped tin oxide have been employed in the past.
Bhat et al (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, vol 258, p369) investigate the effects of electron beam radiation on undoped tin oxide and aluminium doped tin oxide. Preparation of films is disclosed with aluminium chloride serving as the aluminium source in the precursor chemistry.
Bagheri-Mohagheghi eta!, (Journal of Physics D: Applied Physics, Volume 37, Number 8, 21 April 2004,pp. 1248-1253(6)) investigate the influence of Al doping on the electrical, optical and structural properties of Sn02 transparent conducting films deposited by the spray pyrolysis technique.
Ahmed eta!, (Journal of Sol-Gel Science and Technology, 2006, Volume 39, Number 3, Pages 241-247) investigate the effect of Al doping on the conductivity type inversion and electro-optical properties of Sn02 thin films synthesized by the sol-gel technique.
A preferred method for deposition of coatings during mass production of flat glass is by Chemical Vapour Deposition (CVD). As is well known to those skilled in the art of flat glass coating, this technique involves reacting one or more precursors of the coating material in the region of the glass surface to deposit the coating thereon. Processes are preferred where the precursors may be mixed before delivery to the reaction site (glass surface) as this allows for simpler plumbing arrangements for the precursor delivery lines. However this requires a combination of precursors that will not pre-react in the delivery lines.
EP1238948 provides an exemplary description of coating glass substrates by CVD.
For deposition of tin oxide, one preferred reaction process uses dimethyl tindichloride, water and oxygen as reaction precursors. These chemicals lend themselves well to the CVD technique as applied to flat glass) since they may be pre-mixed and delivered to the reaction site (i.e. the surface of the glass) without pre-reaction. A process which builds upon this technique by introducing one or more precursors for aluminium doping of the tin oxide, while still retaining the benefit of no significant pre-reaction, would represent a useful advance in the art.
The precursors hitherto employed for CVD deposition of aluminium doped tin oxide have a tendency to pre-react -particularly in the presence of water.
Kim eta! have studied the effect of water vapour on the growth of aluminium oxide films by low pressure chemical vapour deposition (Thin Solid Films 1993, vol 230, 156-159).
Aluminium 2-ethylethanoate (also referred to as aluminium acetylacetate or Al(acac)3) is used as a precursor. However, Kim et al introduce the reactants to the reaction chamber separately and indicate the likelihood that water vapour and Al(aeae) will combine immediately on contact in the gas phase. Thus, A1(acae)3 is not an obvious choice of precursor for CVD, when searching for a compound that may be pre-mixed with water in the gaseous phase.
According to the invention, a method of manufacturing a substrate having a coating of aluminium doped tin oxide comprises the steps set out in claim 1 attached hereto.
The invention arises from the discovery that addition of Al(acac)3 to a pre-reaction mixture of precursors for the CVD deposition of tin oxide on a substrate, allows production of aluminium doped tin oxide with little or no pre-reaction of precursors before the mixture reaches the substrate surface.
The invention will now be described with reference to the appended figures in which: figure 1 illustrates a static coater used for CVD coating of static substrates of discrete dimensions and figure 2 illustrates a dynamic coater typically used for CVD coating of a moving substrate, for example during the float glass production method.
Referring to figure 1, in a static eoater', the premixed precursors move towards the coater through a heated line 1 before they reach baffle section 2 which equalises the precursor flow before it enters the sealed coating section. The glass substrate 4 sits on a heated carbon block 3 which is heated to the desired temperature using either heating elements (not shown) inserted inside the carbon block or by an induction coil (not shown) around the sealed coating section. Any unreacted precursor or by products are then directed towards fish tail exhaust 5 and continue towards the incinerator 6. The arrows show the direction in which the gaseous mixture moves.
Referring to figure 2, a dynamic coater for supplying precursors according to the invention to a dynamic substrate 12, such as the glass ribbon encountered during the continuous float glass production process, has a generally linear configuration and is shown in cross section.
The beam comprises a box section framework having cavities 7 through which a fluid such as oil may be circulated to maintain the temperature of the apparatus by heat exchange.
Precursor gas mixture is supplied via conduit 8 (which may also be fluid cooled) extending along the coating beam, and through drop lines 9 spaced along conduit 8. The precursor gas mixture, so delivered by drop lines 9 enters a delivery chamber 10 and then through passage 11 to the surface region of glass substrate 12 where they flow in the direction of the arrows.
Baffles 13 may be included in the delivery chamber to provide for a more uniform flow and distribution of precursor materials across the substratc 12.
Spent precursor materials are removed through exhaust chambers 14.
The coating beam illustrated in figure 2 is referred to as a bi-directional beam because the precursor mixture flows in two directions across the substrate 12 on exiting passage 11. (The two directions correspond to upstream' and downstream' for a dynamic coater below which the substrate is passed).
Examples
A series of experiments were performed on a static coater as illustrated in figure 1, to examine the feasibility of depositing 5n02:Al coatings using Al(acac)3 as a precursor for the coating.
Dimethyl tin diehloride was delivered using a bubbler typically at 140C controlling the flow by valying the volume of cattier gas. Al(acac)3 was also delivered by bubbler, this time at 200C. The water was delivered by syringe driver into a tube evaporator.
Table I summarises these initial trials, indicating the mole percentage of each precursor in the gaseous mixture; the approximate thickness of coating obtained and the sheet resistance of the resultant coating. In the table DMT = dimethyltin dichloride; Al(aeac)3 = aluminium 2-ethylethanoate.
%DMT %H20 %02 %A1(acac)3 Approx thickness at R thickest point (nm) (Kohms/sq) thickest 4.2 14 16.1 0.26 80 1900 1.2 14.5 16.6 0.27 80 326 1.3 16.4 18.7 0 250 19 1.2 14.5 16.6 0.2 70 28
Table I
These experiments demonstrate the possibility of depositing Sn02:Al using an Al(acac)3 precursor as the aluminium source. The occurrence ofblockages in the precursor delivery pipework as a result of either pre-reaetion or condensation of the precursors was greatly mitigated and no blockages were observed if the pipework was maintained at 180-220°C.
A further series of experiments was performed to examine the feasibility of depositing an Sn02:Al coating using a dynamic coater as illustrated in figure 2. The results of these experiments are summarised in table 2. The column named Substrate Coating indicates a coating or coatings applied to the glass substrate prior to deposition of the Sn02:Al coating.
Thickness refers to the thickness of the Sn02:A1 coating. Sheet resistance was measured using a four point probe. Sheet
resistance Substrate Thickness ohms/sq, %DMT %1120 %02 %AI(acac)3 Coating (nm) 4pp 968 14#3 0.36% 7.53 1% 4.28% 0.00% Si02 104 133 K Not Out of 96814#4 0.00% 6.809% 3.87% 0.23% SiO2 etchable range Out of 968 14#5 0.36% 7.5 12% 4.27% 0.25% SiO2 <50 nm range Out of 96814#6 0.36% 7.421% 4.22% 0.19% Si02 <50 nni range 968 15#1 0.36% 7.492% 4.26% 0.09% Si02 134 53.7 M 96815#2 0.61% 7.493% 4.26% 0.25% TECIOFS -8.7 96815#3 0.61% 7.493% 4.26% 0.25% TEC1O -9.28 96815#4 0.00% 6.809% 3.87% 0.23% TECIOFS -8.50 96815#5 0.00% 6.809% 3.87% 0.23% TEC1OFS -8.77 96815#7 0.40% 6.423% 3.65% 0.00% TECIOFS -8.95 968 15#8 0.72% 14.204% 8.08% 0.24% Si02 188 645 K Out of 968 15#9 0.37% 14.550% 8.28% 0.24% SiO2 70 mu range
Table 2
These experiments demonstrate the possibility of depositing Sn02:A1 on a moving substrate, such as the continuous glass ribbon created during the float glass production process, using an A1(acac)3 precursor as the aluminium source.
Claims (3)
- Claims 1. A method of depositing a coating of aluminium doped tin oxide on a substrate comprising the steps of preparing a precursor gas mixture containing a source of tin, a source of oxygen, water and a source of aluminium and delivering said precursor gas mixture to a coating chamber opening on to the substrate, characterised in that the source of aluminium comprises aluminium 2-cthylethanoatc.
- 2. A method according to claim 1 wherein the precursor gas mixture comprises dimethlytin dichloride, oxygen, water and aluminium 2-ethylethanoate.
- 3. A method according to claim 1 or 2, where the precursor gas mixture is maintained at a temperature of 180 -220°C prior to introduction to the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1304966.3A GB2512069A (en) | 2013-03-19 | 2013-03-19 | Aluminium doped tin oxide coatings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1304966.3A GB2512069A (en) | 2013-03-19 | 2013-03-19 | Aluminium doped tin oxide coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201304966D0 GB201304966D0 (en) | 2013-05-01 |
| GB2512069A true GB2512069A (en) | 2014-09-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1304966.3A Withdrawn GB2512069A (en) | 2013-03-19 | 2013-03-19 | Aluminium doped tin oxide coatings |
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| Country | Link |
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| GB (1) | GB2512069A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4098631A1 (en) * | 2020-01-10 | 2022-12-07 | Cardinal CG Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| WO2024052668A1 (en) * | 2022-09-06 | 2024-03-14 | Pilkington Group Limited | Process for depositing a layer |
| US12006249B2 (en) | 2010-01-16 | 2024-06-11 | Cardinal Cg Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101696492A (en) * | 2009-10-23 | 2010-04-21 | 北京航空航天大学 | Device and method for preparing aluminum-doped zinc oxide transparent conductive film |
| CN102212796A (en) * | 2011-05-18 | 2011-10-12 | 浙江大学 | Non-magnetic ions Zn<2+>, Mg<2+> and Al<3+> doped SnO2-based magnetic semiconductor film material and preparation method thereof |
-
2013
- 2013-03-19 GB GB1304966.3A patent/GB2512069A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101696492A (en) * | 2009-10-23 | 2010-04-21 | 北京航空航天大学 | Device and method for preparing aluminum-doped zinc oxide transparent conductive film |
| CN102212796A (en) * | 2011-05-18 | 2011-10-12 | 浙江大学 | Non-magnetic ions Zn<2+>, Mg<2+> and Al<3+> doped SnO2-based magnetic semiconductor film material and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Materials Science and Engineering, Vol B85, 2001, Wang et al, "Optical and electrical properties of p-type transparent conducting Cu-Al-O thin films prepared by plasma enhanced chemical vapor deposition", pages 131-134 * |
| Thin Solid Films, Vol 235, 1994, Minami et al, "Preparation of milky transparent conducting ZnO films with textured surface by atmospheric chemical vapour deposition using Zn(C5H7O2)2", pages 14-19 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12006249B2 (en) | 2010-01-16 | 2024-06-11 | Cardinal Cg Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| EP4098631A1 (en) * | 2020-01-10 | 2022-12-07 | Cardinal CG Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| WO2024052668A1 (en) * | 2022-09-06 | 2024-03-14 | Pilkington Group Limited | Process for depositing a layer |
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| Publication number | Publication date |
|---|---|
| GB201304966D0 (en) | 2013-05-01 |
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