GB2508493B - Radiation detector and method - Google Patents

Radiation detector and method

Info

Publication number
GB2508493B
GB2508493B GB201317817A GB201317817A GB2508493B GB 2508493 B GB2508493 B GB 2508493B GB 201317817 A GB201317817 A GB 201317817A GB 201317817 A GB201317817 A GB 201317817A GB 2508493 B GB2508493 B GB 2508493B
Authority
GB
United Kingdom
Prior art keywords
radiation detector
detector
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB201317817A
Other versions
GB201317817D0 (en
GB2508493A (en
Inventor
Thalis Anaxagoras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ISDI Ltd
Original Assignee
ISDI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB201102478A external-priority patent/GB201102478D0/en
Application filed by ISDI Ltd filed Critical ISDI Ltd
Publication of GB201317817D0 publication Critical patent/GB201317817D0/en
Publication of GB2508493A publication Critical patent/GB2508493A/en
Application granted granted Critical
Publication of GB2508493B publication Critical patent/GB2508493B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
GB201317817A 2011-02-11 2012-02-13 Radiation detector and method Active GB2508493B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB201102478A GB201102478D0 (en) 2011-02-11 2011-02-11 Radiation detector and method
GB201305882A GB2501388B (en) 2011-02-11 2012-02-13 Radiation detector and method

Publications (3)

Publication Number Publication Date
GB201317817D0 GB201317817D0 (en) 2013-11-20
GB2508493A GB2508493A (en) 2014-06-04
GB2508493B true GB2508493B (en) 2015-04-08

Family

ID=50686260

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201317817A Active GB2508493B (en) 2011-02-11 2012-02-13 Radiation detector and method

Country Status (1)

Country Link
GB (1) GB2508493B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1154310A2 (en) * 2000-04-12 2001-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP2010273383A (en) * 2010-08-06 2010-12-02 Canon Inc Imaging apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1154310A2 (en) * 2000-04-12 2001-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP2010273383A (en) * 2010-08-06 2010-12-02 Canon Inc Imaging apparatus

Also Published As

Publication number Publication date
GB201317817D0 (en) 2013-11-20
GB2508493A (en) 2014-06-04

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