GB2506993A

GB2506993A - Light source driving device

Info

Publication number: GB2506993A
Application number: GB1316873.7A
Authority: GB
Inventors: Bong Jin Lee
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2012-09-24
Filing date: 2013-09-23
Publication date: 2014-04-16
Anticipated expiration: 2033-09-23
Also published as: CN103687195B; CN103687195A; GB201316873D0; GB2506993B

Abstract

A light source driving device 100 for a light source unit 30 having at least one light emitting diode (LED) receiving power from the driving device, in which the driving device is arranged to be compatible with a ballast stabilizer 20 for a fluorescent lamp and includes a transformer unit 110 including a primary winding part Co1, the impedance of which is matched to that of a fluorescent lamp in a lit state, and a secondary winding part Co2; a rectifying diode 120; a filter unit 140; and an open loop preventing unit including a freewheeling diode 130 providing a closed loop to the filter unit such that power stored in the filter unit is applied to the light source unit when the rectifying diode 120 is turned off.

Description

Intellectual Property Office Applicacion Nc,. (lB 1316573.7 RTM Dace: 0 Fchruary 2014 The following term is a registered trade mark and shou'd be read as such wherever it occurs in this document:

ZIGBEE

Inlelleclual Property Office is an operaling name of the Pateni Office www.ipo.gov.uk

ILLUMINATING APPARATUS

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the priority to, and the benefit of, Korean Patent Applications No. 10-2012-0106041 filed on September 24, 2012, and No. 10-2013-0032811 filed on March 27, 2013, with the Korean Intellectual Property Office, the disolosure of which is incorporated herein by reference.

BACKGROUND

Field

[0002] The present inventive concept relates to an illuminating apparatus.

Description of the Related Art

[0003] A light emitting diode (LED) is driven by direct ourrent (DC) power, so in order to substitutively employ an LED illuminating apparatus, using an LED as a light source, in a lamp driven by alternating current (AC) power, a driving devioe is required. In particular, a ballast stabilizer for a fluorescent lamp has characteristics of outputting an appropriate amount of power for driving a fluorescent lamp, so if an LED illuminating apparatus exhibiting electrical characteristics different from those Page 1 of a fluorescent lamp is used, the LED illuminating apparatus may not operate normally or a device component may be damaged. As a solution thereto, a ballast stabilizer installed in a fluorescent lamp is removed and a power supplier for an LED illuminating apparatus is installed instead. Thus, a light source driving device, allowing for compatibility between a ballast stabilizer for a fluorescent lamp and an LED illuminating apparatus is required.

ST.Th'Th4ARY [0004] An aspect of the present inventive concept provides a light source driving device compatible with a ballast stabilizer for a fluorescent lamp.

[0005] An aspect of the present inventive oonoept provides a illuminating apparatus using the foregoing light source driving device.

[0006] According to an aspect of the present inventive concept, there is provided a illuminating apparatus including: a light source driving device; and a light source unit having at least one light emitting diode (LED) receiving light source driving power from the light source driving device, wherein the light source driving device includes: a transformer unit including a primary winding part including first and second external input terminals Page 2 receiving external power from a ballast stabilizer and a coil having an impedance level set to allow the ballast stabilizer to output a normal amount of power, and a secondary winding part electromagnetically coupled to the primary winding part to transform applied external power; a rectifying diode rectifying output power from the secondary winding part of the transformer unit; a filter unit having an input terminal and an output terminal outputting light source driving power, delivering rectified power, applied from the rectifying diode to the input terminal thereof when the rectifying diode is turned on, to the output terminal thereof, and storing a partial amount of the rectified power; and an open loop preventing unit providing a closed loop to the filter unit such that power stored in the filter unit is applied to the output terminal when the rectifying diode is turned off.

[0007] An impedance level of the coil set to allow the ballast stabilizer to output a normal amount of power may be obtained by using Equation 1.

[0008] [Equation 1]

V

[0009] Z = where a1t is a voltage output when the ballast stabilizer is in a normal power output state, and liamc: is a current output when the ballast stabilizer is in a normal power output state.

Page 3 [0010] Impedance of the coil may range from about 7000 to about 8000.

[0011] The filter unit may be a low pass filter (LPF) - [0012] The open loop preventing unit may include a free-wheeling diode.

[0013] The LED may include a light emitting laminate including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively, wherein the first electrode includes at least one conductive via connected to the first conductivity-type semiconductor layer penetrating the second conductivity-type semiconductor layer and the active layer.

[0014] The LED may include: a substrate; a base layer disposed on the substrate; a plurality of nano-light emitting structures disposed on the base layer and including a first conductivity-type nanocore, an active layer, and a second conductivity-type semiconductor layer; and a filler material filling spaces between the plurality of nano-light emitting structures.

[0015] The LED may include: a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed Page 4 therebetween; and first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively, wherein at least one of the first and second electrodes may include a plurality of laminated metal layers including different elements.

[0016] The light source unit may include: at least one blue LED emitting blue light; and a wavelength oonversion unit including a wavelength conversion material emitting wavelength-converted light excited by light emitted from the blue LED, wherein the wavelength oonversion material is at least one of yellow, red, and green phosphors, and the phosphor is at least one type of phosphor selected from the group consisting of oxide-based phosphors, silicate-based phosphors, nitride-based phosphors, and sulfide-based phosphors.

[0017] The light source unit may emit white light, the white light may have two or more peak wavelengths, and a color temperature of the white light may range from about 2000K to about 20000K.

[0018] The apparatus may further include: at least one of a sensing unit including at least one of a temperature sensor, a humidity sensor, a motion sensor, and an illumination sensor; and a communications module wirelessly receiving a signal provided with respect to driving of the illuminating apparatus from the outside; and a controller Page 5 controlling power applied to the light source unit from the light source driving device upon receiving a signal from at least one of the sensing unit and the communications module.

[0019] The light source unit may include: a first light souroe group emitting white light having a first color temperature; and a seoond light source group emitting white light having a second color temperature.

[0020] According to an aspect of the present inventive ooncept, there is provided a illuminating apparatus including: a socket including an input terminal receiving external power from a ballast stabilizer; a housing coupled to the sooket; a plate installed within the housing and including a light source driving device; and a light source unit mounted on the plate and including at least one LED receiving light source driving power from the light source driving device, wherein the light source driving device includes: a transformer unit including a primary winding part including first and second external input terminals receiving external power from the socket and a coil having an impedance level set to allow the ballast stabilizer to output a normal amount of power, and a secondary winding part electromagnetically coupled to the primary wInding part to transform the applied external power; a rectifying diode rectifying output power from the secondary winding part of the transformer unit; a filter unit having an input Page 6 terminal and an output terminal outputting light source driving power, delivering power, applied from the secondary winding part of the transformer unit to the input terminal thereof when the rectifying diode is turned on, to the output terminal thereof, and storing a partial amount of power; and an open loop preventing unit providing a closed loop to the filter unit such that power stored in the filter unit is applied to the output terminal when the rectifying diode is turned off.

[0021] The plate may include: an insulating layer disposed on a metal support substrate; and a conductive pattern or resin coated copper (RCC) disposed on the insulating layer.

[0022] The socket may include two input terminals and disposed in both end portions of the illuminating apparatus.

[0023] According to an aspect of the present inventive concept, there is provided a light source driving device includes: a transformer unit including a primary winding part including first and second external input terminals receiving external power from a ballast stabilizer and a coil having an impedance level set to allow the ballast stabilizer to output a normal amount of power, and a secondary winding part electromagnetically coupled to the primary winding part to transform the applied external power; a rectifying diode rectifying output power from the secondary winding part of the transformer unit; a filter Page 7 unit having an input terminal and an output terminal outputting light source driving power, delivering rectified power, applied from the rectifying diode to the input terminal thereof when the rectifying diode is turned on, to the output terminal thereof, and storing a partial amount of the rectified power; and an open loop preventing unit prcviding a closed locp tc the filter unit such that power stored in the filter unit is applied to the output terminal when the rectifying diode is turned off.

Ii) [0024] An impedance level of the coil set to allow the ballast stabilizer to output a normal amount of power may be obtained by using Equation 1.

[0025] [Equation 1] [0026] = where 7ian is a voltage output when the ballast stabilizer is in a ncrmal power output state, and is a current output when the bailast stabilizer is in a normal power output state.

[0027] Impedance of the coil may range from about 7000 to abcut 8000.

[0028] The filter unit may be a low pass filter (LPF) [0029] The open loop preventing unit may include a free-wheeling diode.

[0030] The light source driving device may further include: a thermistor connected to at least one of the Page 8 first and second external input terminals of the primary winding part in series.

[0031] The light source driving device may further include: a switching unit connected to the thermistor in parallel.

[0032] The light source driving device may further inolude: a resistor unit connected to the external input terminal of the primary winding part in series and a switching unit connected to the resistor unit in parallel, wherein impedanoe of the resistor unit may be set to allow the ballast stabilizer to output ignition power.

[0033] The primary winding part may further include: third and fourth external input terminals, and first and second potential difference generating units generating a potential difference between the first and third external input terminals and between the second and fourth external input terminals.

[0034] The first and second potential difference generating units may be first and second sub-coils, respectively.

[0035] The light source driving device may further include: a Dc/Dc converter receiving light source driving power from an output terminal of the filter unit and outputting regulated light source driving power.

[0036] The Dc/Dc converter may be configured according to Page 9 any one of boost, buck, buok-boost, and flyback sohemes.

[0037] The light source driving device may further include: a linear regulator receiving light source driving power from the output terminal of the filter unit and outputting regulated light source driving power.

[0038] The foregoing technical solutions do not fully enumerate all of the features of the present inventive concept. The foregoing and other objects, features, aspects and advantages of the present inventive concept will become more apparent from the following detailed description of the present inventive concept when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The above and other aspects, features and other advantages of the present inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a circuit diagram of a light source driving device according to an embodiment of the present inventive concept; FIGS. 2A through 2C are circuit diagrams illustrating operational states of the light source driving device according to an embodiment of the present inventive Page 10 concept; FIGS. 3 through 7 are circuit diagrams illustrating light source driving devices according to different embodiments of the present inventive concept; FIGS. 8A and SB are graphs showing operations of the light source driving device according to the embodiment of FIG. 1; FIGS. 9A and SB are graphs showing operations of the light source driving device according to the embodiment of FIG. 3; FIG. 10 is a view illustrating a illuminating apparatus according to an embodiment of the present inventive concept; FIG. 11 is a perspective view illustrating an assembled state of the illuminating apparatus of FIG. 10; FIGS. 12A and 12B are views illustrating various shapes of housing employable in an illuminating apparatus according to an embodiment of the present inventive concept; FIGS. 13 through 17 are views illustrating various examples of an LED employable in an illuminating apparatus according to an embodiment of the present inventive concept; FIGS. 18 through 23 are views illustrating various examples of a plate employable in the illuminating Page 11 apparatus according to an embodiment of the present inventive concept; FIG. 24 is CIE 1931 color space coordinates illustrating a color temperature spectrum; FIG. 25 is a view illustrating a structure of a quantum dot; and FIGS. 26 through 33 are views illustrating a lighting system implemented by applying a illuminating apparatus according to an embodiment of the present inventive concept.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0040] Embodiments of the present inventive concept will now be described in detail with reference to the accompanying drawings.

[0041] Ihe invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like components.

[0042] FIG. 1 is a circuit diagram of a light source driving device according to an embodiment of the present Page 12 inventive concept.

[0043] Referring to FIG. 1, a light source driving device according to an embodiment of the present inventive concept includes a transformer unit 110 including a primary winding part 111 and a secondary winding part 112, a rectifying diode rectifying output power from the secondary winding part 112 of the transformer unit 110, a filter unit having an input terminal 14Cc and an output terminal 140d; and an open loop preventing unit 130 providing a closed loop to the filter unit 140 when the rectifying diode 120 is turned off.

[0044] The primary winding part 111 of the transformer unit 110 may include first and second external input terminals lila and lilb that receive external power 10 from a ballast stabilizer 20. The ballast stabilizer 20 has first to fourth output terminals A, B, C, and D, and the external input terminals lila and lilb may receive the external power 10 from a short-circuit of the first and second output terminals A and B and a short-circuit of the third and fourth output terminals C and D of the ballast stabilizer 20.

[0045] In order to stably drive a fluorescent lamp of lighting equipment for a fluorescent lamp, the ballast stabilizer 20 receives the eternal power 10 in consideration of electrical characteristics of a general Page 13 fluorescent lamp, converts the received external power, and outputs the converted power. The ballast stabilizer 20 may be installed in general lighting equipment for a fluorescent lamp. Hereinafter, the ballast stabilizer 20 will be described in detail. However, it is described to help clearly understand the present inventive ccncept and the ballast stabilizer 20 mentioned in the present embodiment is nct limited theretc.

[0046] Tn general, a fluorescent lamp may have high impedance and low impedance according to whether or not it is discharged. In detail, the fluorescent lamp takes on insulaticn characteristics in a state befcre being lighted and in this case, the fluorescent lamp has high impedance, e.g., very high impedance ranging from tens of ko to hundreds of kQ. At this time, when a high voltage is applied to the fluorescent lamp to discharge it to thereby allow the fluorescent lamp to reach a lit state, the fluorescent lamp, forming a channel thrcugh which a current flows, exhibits low impedanoe. For example, low impedance may range from about 700 0 to about 800 0.

[0047] Tn consideration of such electrical characteristics of the fluorescent lamp, the ballast stabilizer 20 may output ignition power and normal power. Tn detail, the ballast stabilizer 20 may be an electronic ballast stabilizer and may include a power factor correction Page 14 circuit and an inverter. Also, the inverter may be implemented as an LLC resonance inverter, a full-bridge inverter, or a half-bridge inverter. When input impedance corresponds to a high impedance value of the fluorescent lamp, the ballast stabilizer 20 may recognize that fluorescent lamp is in a state before being lighted and output ignition power having a high voltage for initial discharge. A voltage value of the ignition power may range from about 500V to 1 kV. In contrast, when impedance input to the ballast stabilizer corresponds to a low impedance value of the fluorescent lamp, the ballast stabilizer 20 may recognize that the fluorescent lamp is in a lit state and output a normal amount of power. Here, a voltage value of the normal power may range from 100V to 300V, for

example.

[0048] When a light source driving device employing an LED as a light source is connected to the ballast stabilizer 20, impedance of an existing fluorescent lamp and that of the light source driving device recognized by the ballast stabilizer 20 are different, so the ballast stabilizer 20 may malfunction. For example, the ballast stabilizer 20 may not output power or may output ignition power continuously. In this case, the light source driving device may not be normally driven or damaged.

[0049] Thus, according to an embodiment of the present Page 15 inventive concept, a coil Ccl of the primary winding part 111 may have impedance matched to that of an existing florescent lamp in a lit state. Namely, the coil Col may be set to have impedance set to allow the ballast stabilizer 20 to recognize that the fluorescent light in a lit state is connected, and output a normal amount of power.

[0050] When a voltage and a current output when the ballast stabilizer 20 is in a state of outputting normal power are defined as and 11a, respectively, impedance Z, set to allow the ballast stabilizer 20 to output a normal amount of power may be obtained as expressed by Equation 1.

[0051] [Equation 1] iimp Iamj, [0052] The impedance Z, may have a value ranging from about 700 C to about 800 C, for example, but the present inventive concept is not limited thereto.

[0053] Thus, the coil Col of the primary winding part 111 may be set to have induotance L calculated by Equation 2.

[0054] [Equation 2] z. [0055] L = (Here, Z. is impedance set to allow the 2yr Ia ballast stabilizer 20 to output a normal amount of power, and f is frequency of the external power 10 output from Page 16 the ballast stabilizer 20 after being modulated) [0056] The transformer unit 110 may include the secondary winding part 112 electromagnetically coupled to the primary winding part 111. The secondary winding part 112 may transform the external power 10 applied from the ballast stabilizer 20 through the external input terminals lila and nib of the primary winding part 111. Namely, the external power 10 applied from the ballast stabilizer 20 may have a voltage having a magnitude inappropriate for driving a light source using an LED, and here, the secondary winding part 112 may transform the external power 10 into power having a magnitude appropriate for a light source (hereinafter, referred to as an external light source 30') employable in the light source driving device 100 according to an embodiment of the present inventive concept. Also, the secondary winding part 112 prevents the external power source 10 from being directly connected, to protect the light source driving device 100.

[0057] The rectifying diode 120 may half-wave rectifies transformed output power from the secondary winding part 112 of the transformer unit 110 and transfer the half-wave rectified power to an input terminal of the filter unit 140.

[0058] The filter unit 140 receives the rectified power from the rectifying diode 120 by an input terminal l4Oc thereof and transfers a light source driving voltage for Page 17 driving the external light source 30 to an output terminal 140d thereof, and here, the filter unit 140 may serve to reduce noise and a ripple voltage of the light source driving power.

[0059] For example, the filter unit 140 may include an inductor 141 and a capacitor 142 to transfer light source driving power, current and voltage fluctuations of the light source driving power having been effectively buffered, to the output terminal 140d. Namely, the filter unit 140 transfers power, which has been applied to the input terminal 140c when the rectifying diode 120 is turned on, to the output terminal 140d, and in this case, the filter unit 140 stores a partial amount of power applied to the input terminal 140c, and when the rectifying diode 120 is turned off, the filter unit 140 may apply the power stored therein to the output terminal 140d. A detailed operation of the filter unit 140 will be described together with the open loop preventing unit 130. Meanwhile, referring to the embodiment of FIG. 1, the filter unit 140 is implemented as a low pass filter (LPF), but the present inventive concept is not limited thereto.

[0060] The open loop preventing unit 130 provides a closed loop in the filter unit 140 when the rectifying diode 120 is turned off. The open loop preventing unit 130 may include a free-wheeling diode. An operation of the open Page 18 loop preventing unit 130 will be described with reference to FIGS. 2A through 20.

[0061] FIGS. 2P through 20 are circuit diagrams illustrating operational states of the light source driving device according to an embodiment of the present inventive concept. Specifically, FIGS. 2A through 20 are circuit diagrams illustrating operational states according to turn-on/turn-off of the rectifying diode 120.

[0062] Referring to FIG. 2A, when a direction of a voltage of output power from the secondary winding part 112 is a clockwise direction, the rectifying diode 120 is turned on and the filter unit 140 forms a closed loop with the secondary winding part 112 to supply light source driving power to the external light source 30.

[0063] Meanwhile, when a direction of the voltage of the output power from the secondary winding part 112 is a counterclockwise direction, the rectifying diode 120 is turned off. In this case, as illustrated in FIG. 20, the filter unit 140 is electrically separated from the secondary winding part 112 and cannot receive output power from the secondary winding part 112 for applying light source driving power to the external light source 30. Ilso, since an open 1oop is formed, it is difficult to supply the light source driving power stored in the filter unit 140 to the external light source 30 when the rectifying diode 120 Page 19 is turned on.

[0064] Thus, in an embodiment of the present inventive concept, the open loop preventing unit 130 is provided.

Referring to FIG. 2B, when the rectifying diode 120 is turned on, the open loop preventing unit 130 provides a closed loop in the filter unit 140, and thus, when the rectifying dicde 120 is turned cff, the filter unit 140 may supply power charged therein to the external light source.

[0065] According to the present embodiment, a light source driving device directly compatible with a ballast stabilizer is provided.

[0066] FIGS. 3 and 4 are circuit diagrams illustrating light source driving devices according to different embodiments of the present inventive concept.

[0067] The ballast stabilizer 20 may be required to support an input having high impedance such as that before a fluorescent light is lighted according to types thereof.

In detail, the ballast stabilizer 20 may detect a voltage of an output terminal of the ballast stabilizer 20, and when ignition power is not detected at the time of initial driving, the ballast stabilizer 20 may recognize that the fluorescent lamp has an error and may not output power or may continuously output ignition power. For being compatible with the ballast stabilizer 20, the light source driving device may have impedance set for the ballast Page 20 stabilizer 20 to output ignition power at the time of initial driving. Namely, the light source driving device may have such high impedance as that before the fluorescent lamp is lighted.

[0068] Referring to FIG. 3, the light source driving device 200 further includes a thermistor 113 connected to at least one of the first and second external input terminals lila and ilib of the primary winding part lii in series.

[0069] As the thermistor 113, an NIC (Negative Temperature Coefficient) thermistor may be applied. The NTC thermistor has high impedance at a low temperature condition and the impedance is reduced according to an increase in temperature. Thus, at the time of initial driving, the sum of impedance of the coil Col of the primary winding part 111 and impedance of the NTC thermistor may be adjusted to be matched to high impedance before the fluorescent lamp is lighted, to thus allow the ballast stabilizer 20 to output ignition power.

[0070] Here, majority of a high voltage of the ignition power is applied to the thermistor 113 according to a voltage distribution principle, so, although ignition power is applied to the light source driving device 200, the light source driving device 200 and the external light source 30 can be protected from the high voltage.

Page 21 [0071] In the case of using an NTC thermistor, as driving starts, the a temperature of thermistor 113 is increased to reduce impedance, and thus, the sum of impedance of the primary winding part coil Col and impedance of the thermistor 113 may reach a value a value set for the ballast stabilizer 20 to output a normal amount of power.

Here, the ballast stabilizer 20 outputs normal power.

[0072] Meanwhile, the light source driving device according to the present embodiment may further include a switohing unit 114 oonnected to the thermistor 113 in parallel. Although impedance of the thermistor 113 is gradually reduced to reach a state in which the ballast stabilizer 20 outputs normal power, the thermistor 113 still has certain impedance, unnecessarily consuming power.

Thus, the switching unit 114 connected to the thermistor 113 in parallel may be further provided. When the ballast stabilizer 20 outputs normal power, the switching unit 114 may be switched on to remove power consumed in the thermistor 113.

[0073] In detail, the switching unit 114 may be switched off when a potential difference between both ends of the thermistor 113 is greater than a pre-set value and may be switched on when the potential difference between both ends of the thermistor 113 is smaller than the pre-set value.

Alternatively, the switching unit 114 may be switched off Page 22 during a pre-set period of time or may be switohed on when the pre-set period of time has lapsed. However, the present inventive concept is not limited thereto.

[0074] FIG. 4 illustrates an embodiment in which the thermistor 113 is replaced by a resistor unit 115 and a switching unit 116 connected to the resistor unit 115 in parallel. Referring to FIG. 4, the light source driving device 300 may further include the resistor unit 115 connected to the external input terminals lila and 11Th of the primary winding part 111 in series and the switching unit 116 connected to the resistor unit 115 in parallel.

[0075] Impedance of the resistor unit 115 may be set to allow the ballast stabilizer 20 to output ignition power.

For example, the resistor unit 115 may have impedance ranging from tens of ko to hundreds of ko. The switching unit 116 may be switched off when a potential difference between both ends of the resistor unit 115 is greater than a pre-set value and may be switched on when the potential difference between both ends of the resistor unit 113 is smaller than the pre-set value. Alternatively, the switching unit 116 may be switched off during a pre-set period of time or may be switched on when the pre-set period of time has lapsed.

[0076] FIG. 5 is a circuit diagram illustrating a light source driving device 400 according to a different Page 23 embodiment of the present inventive concept.

[0077] The ballast stabilizer 20 may detect a voltage between the first and second output terminals A and B and the third and fourth output terminals C and D and may deteot a predetermined potential difference, e.g., a potential differenoe of approximately 1OV, according to types. Namely, such a configuration is based on a oonsideration of a filament installed in an electrode of a fluorescent lamp, and when a predetermined potential difference between the first and second output terminals A and B and that between the third and fourth output terminals C and D are not detected, the ballast stabilizer may recognize that the filament of the fluorescent lamp has an error and may malfunction such as not outputting power.

[0078] Thus, referring to FIG. 5, the primary winding part 111 of the light source driving device 400 according to the present embodiment further inoludes third and fourth external input terminals ilic and lild, and may further include first and second potential difference generating units generating a potential difference between the first external input terminal lila and the third external input terminal ilic and between the second external input terminal 11th and the fourth external input terminal hid.

In the present embodiment, the first and second potential Page 24 difference generating units may be configured as coils, respectively (hereinafter, referred to as first and second sub-coils Co3 and 04'). However, the present inventive concept is not limited thereto and any means may correspond to the potential difference generating unit according to the present embodiment as long as a potential difference may be generated between the first external input terminal lila and the third external input terminal lilo and between the second external input terminal ilib and the fourth external input terminal ilid.

[0079] The first, second, third, and fourth external input terminals lila, ilib, illo, and hid may be connected to the second, third, first, and fourth output terminals B, C, A, and D, and the first sub-coil Co3 formed between the first external input terminal lila and the third external input terminal ilic may generate a potential difference between the first and second output terminals A and B of the ballast stabilizer 20. Also, the second sub-coil C04 formed between the second external input terminal illb and the fourth external input terminal ilid may generate a potential difference between the third and fourth output terminals sO and D of the ballast stabilizer 20, so that the ballast stabilizer 20 may not malfunction.

[0080] Also, when the potential difference generating units are implemented as sub-coils according to the present Page 25 embodiment, the coil 0o2 formed in the secondary winding part 112 of the transformer unit 110 may be electromagnetically coupled to the first sub-coil DoS, the second sub-coil 0o4, and the coil Col having an impedance level set to allow the ballast stabilizer 20 to output a normal amount of power to transform the applied external power 10, and in this case, transformation efficiency can be increased.

[0081] FIGS. 6 and 7 are circuit diagrams illustrating light source driving devices according to different embodiments of the present inventive concept.

[0082] Referring to FIG. 6, a light source driving device 500 further includes a Dc/Dc converter 150 receiving light source driving power from the output terminal 140d of the filter unit 140 and outputting regulated light source driving power. The DC/DC converter 150 may be configured according to any one of schemes such as boost, buck, buok-boost, and flyback, but the present inventive concept is not limited thereto.

[0083] Referring to FIG. 7, a light source driving device 600 further includes a linear regulator 160 receiving light source driving power from the output terminal 140d of the filter unit 140 and outputting regulated light source driving power.

[0084] The light souroe driving devices according to the Page 26 embodiments of FIGS. 6 and 7 may be able to output regulated light source driving power by which that the external light source 30 can be effectively driven.

[0085] FIGS. 8A, 83, 9A, and 93 are graphs showing operations of the light source driving device according to an embodiment of the present inventive concept.

[0086] In FIGS. BA, SB, 9A, and 9B, K represents a voltage output by the ballast stabilizer, L represents a voltage of light source driving power output by the light source driving device, and 24 represents a current of light source driving power output by the light source driving device.

[0087] First, FIGS. 8A and 83 are graphs showing operations of the light source driving device 100 according to the embodiment of FIG. 1.

[0088] Referring to FIG. BA, it can be seen that the ballast stabilizer outputs normal power having a voltage of a maximum of about 250V. Thus, light source driving power output by the light source driving device 100 is measured as shown in FIG. SB. According to FIG. SB, a voltage of the light source driving power is measured to be about 45V, but this may be a feature that can be easily changed through design by setting a winding ratio between the primary winding part and the secondary winding part.

[0089] FIGS. 9A and 9B are graphs showing operations of the light source driving device 200 according to the Page 27 embodiment of FIG. 3. In this case, however, the operations correspond to a case in which the switching unit 114 connected to the thermistor 113 in parallel is excluded in the embodiment of FIG. 3.

[0090] Referring to FIG. 9P, it can be seen that the ballast stabilizer outputs ignition power (tl section) at the time of initial driving, and as impedance of the thermistor is decreased, the ballast stabilizer subsequently outputs normal power. Thus, light source driving power output by the light source driving device 200 is measured as shown in FIG. 9B. Referring to FIG. 9B, it can be seen that, although ignition power is input, stable light source driving power is output.

[0091] FIG. 10 is a view illustrating a illuminating apparatus according to an embodiment of the present inventive concept, and FIG. 11 is a perspective view illustrating an assembled state of the illuminating apparatus of FIG. 10.

[0092] Referring to FIG. 10, a illuminating apparatus 700 according to an embodiment of the present inventive concept includes a socket 710 including an input terminal for receiving external power 10 from the ballast stabilizer 20, a housing 730 coupled to the socket 710, a plate 720 installed within the housing 730 and including a light source driving device, and a light source unit 740 mounted Page 28 on the plate 720.

[0093] The socket 710 includes two input terminals 711 and 712 and may be formed in both end portions of the illuminating apparatus 700. Tn this case, a total of four input terminals 711 and 712 are provided in the socket 710 and electrically oonnected to correspond to the first to fourth output terminals 7k, B, C, and D, respectively.

However, the present inventive conoept is not limited thereto and configurations of the sooket 710 may be variously modified.

[0094] The housing 730, serving to protect the light souroe unit 740 and the light source driving device 100 against the outside, may be made of a transparent or translucent material to allow light output from the light source unit 740 to be emitted outwardly. Also, the housing 730 may have a bar-like shape to provide an exterior similar to that of a general fluorescent lamp. However, the present inventive concept is not limited thereto and the housing 730 may have various other shapes such as an annular (circular) shape or a semi-circular (U-like) shape as illustrated in FIGS. 12A and 12B, respectively.

[0095] The light source unit 740 may include at least one light emitting diode (LED) 741 receiving light source driving power from the light source driving device 100.

The LED may be a blue LED emitting blue light, but the Page 29 present inventive concept is not limited thereto. Also, the light source unit 740 may further include a wavelength conversion unit 745 disposed on the LED 741. The wavelength conversion unit 745 may include a wavelength conversion material excited by light output from the LED 741 to emit light having a converted wavelength.

[0096] The LED 741, a semiconductor device emitting light having a predetermined wavelength when an electrical signal is applied thereto, may include, for example, LEDs 741-1 to 741-5 according tc an embodiment illustrated in FIGS. 13 through 17.

[0097] <First embodiment of LED 741> [0098] First, referring to FIG. 13, the LED 741 according to an embodiment of the present inventive concept may be provided as an LED chip 741-1 including a light emitting laminate 5 formed on a semiconductor substrate 1101.

[0099] As the substrate 1101, an insulating substrate, a conductive substrate, or a semiconductor substrate may be used as necessary. For example, the substrate 1101 may be made of sapphire, SiC, Si, F4gAl2O4, F4g0, LiAlO2., LiGaO2, CaN, A1N, A1GaN. Among uhem, a sapphire substrate, a silicon carbide (Sic) substrate, or the like, is commonly used as a heterogeneous substrate. In the case of a sapphire substrate, sapphire is a crystal having Hexa-Rhombo R3c symmetry, of which lattice constants in c-axis and a-axis Page 30 directions are approximately 13.OO1A and 4.758 A, respectively, and has a C-plane (0001), an A-plane (1120), an R-plane (1102), and the like. In this case, a nitride thin film may be relatively easily grown on the C-plane of the sapphire crystal, and because sapphire crystal is stable at high temperatures, the sapphire substrate is commonly used as a nitride growth substrate.

[00100] A silicon (Si) substrate may also be employed as a heterogeneous substrate. Since a silicon (Si) substrate is more appropriate fcr increasing a diameter and is relatively low in price, the Si substrate may be used to facilitate mass-production. A technique of inducing a difference in lattice constants between the silicon substrate having (111) plane as a substrate surface and CaN to a degree of 17% to thereby suppress the generation of crystal defects due to the difference between the lattice constants is required. Also, a difference in coefficients of thermal expansion between silicon and GaN is approximately 56%, requiring a technique of suppressing bowing of a wafer generated due to the difference in the coefficients of thermal expansion. Bowed wafers may result in cracks in the GaN thin film and make it difficult to control processes to increase dispersion of emission wavelengths of light in the same wafer, or the like. The silicon substrate absorbs light generated in the CaN-based Page 31 semiconductor, lowering external quantum yield of the LED 741-1. Thus, the substrate 1101 may be removed and a support substrate such as a silicon substrate, a germanium substrate, an SiAl substrate, a ceramic substrate, a metal substrate, or the like, including a reflective layer, may be additionally formed to be used, as necessary.

[00101] Of course, the substrate 1101 of the LED 741-1 employed in the present embodiment is not limited to a heterogeneous substrate, so a GaN substrate, a homogeneous substrate, may also be used. A GaN substrate does not have great mismatch with a GaN material used to form the light emitting laminate S in a lattice constant and a coefficient for thermal expansion, so it allows a high guality semiconductor thin film to be grown thereon.

[00102] Meanwhile, in case of using a heterogeneous substrate, defects such as dislocation may be increased due to a difference in lattice constants between a substrate material and a thin film material. Also, a difference in coefficients of thermal expansion between the substrate material and the thin film material causes bowing of the substrate when a temperature is changed, and bowing in the substrate may cause cracks in the thin film. These problems may be reduced by using a buffer layer 1102 formed between the substrate 1101 and the GaN-based light emitting laminate S. Page 32 [00103] Thus, in the present embodiment, the LED 741-1 further includes the buffer layer 1102 formed between the substrate 1101 and the light emitting laminate S. The buffer layer 1102 may serve to adjust a degree of bowing of the substrate when an active layer 1130 is grcwn, to reduce wavelength distribution of a wafer.

[00104] Although differs according to a substrate type, the buffer layer 1102 may be made of AlIn5Ga-5N (0«=x«=1, 0«=y«=1), in particular, GaN, A1N, A1GaN, InGaN, or InGaA1N, and a material such as ZrB2, HfB2, ZrN, HfN, TiN, or the like, may also be used as necessary. Also, the buffer layer 1102 may be formed by combining a plurality of layers or by gradually changing a composition.

[00105] Also, in case of employing a silicon substrate as the substrate 1101, silicon has a coefficient of thermal expansion significantly different (about 56%) from that of GaN. Thus, in case of growing a CaN-based thin film on the silicon substrate, when a CaN thin film is grown at a high temperature and is subsequently cooled to room temperature, tensile stress is applied to the CaN thin film due to the difference in the coefficients of thermal expansion between the silicon substrate and the CaN thin film, generating cracks. In this case, in order to prevent the generation of cracks, a method of growing the CaN thin film such that compressive stress is applied to the CaN thin film while Page 33 the GaN thin film is being grown is used to oompensate for tensile stress. In addition, in order to restrain the generation of defects due to a difference in lattice constants, the buffer layer 1102 having a composite structure may be used. In this case, the buffer layer 1102 may serve to control stress for restraining warpage as well as controlling a defect.

[00106] For example, first, an A1N layer is formed as the buffer layer 1102 on the substrate 1101. In this case, a material not including gallium (Ga) may be used in order to prevent a reaction between silicon (Si) and gallium (Ga) The A1N layer is grown at a temperature ranging from 400°C to 1, 30000 by using an aluminum (At) source and a nitrogen (N) source. Here, an A1GaN intermediate layer may be inserted into the center of GaN between the plurality of MN layers to control stress, as necessary, to form the buffer layer 1102 having a composite structure.

[00107] Meanwhile, the substrate 1101 may be completely or partially removed or patterned during a fabrication process in order to enhance optical properties or electrical characteristics of the LED before or after the light emitting laminate S structure is grown. For example, in the case of a sapphire substrate, the substrate may be separated by irradiating a laser on an interface between the substrate 1101 and the buffer layer 1102 or on an Page 34 interface between the substrate 1101 and the light emitting laminate 0, and in case ci a silicon substrate or a silicon carbide substrate, the substrate may be removed through a method of polishing/etching, or the like.

[00108] Also, in removing the substrate 1101, a different support substrate may be used, and in this case, the support substrate may be attached to the opposite side of the original growth substrate by using a reflective metal, or a reflective structure may be inserted into a middle portion of a bonding layer to enhance light efficiency of the LED 741-1.

[00109] Referring to substrate patterning, an uneven surface or a sloped surface may be formed on a main surface (one surface or both surfaces) or a lateral surface of the substrate 1101 before or after the growth of the light emitting laminate S to enhance light extraction efficiency.

A size of the pattern may be selected from within the range of S nm to 500trn, and any pattern may be employed, as long as it can enhance light extraction efficiency as a regular or an irregular pattern. The pattern may have various shapes such as a columnar shape, a peaked shape, a hemispherical shape, a polygonal shape, and the like.

[00110] The light emitting laminate S includes the first and second conductivity-type semiconductor layers 1110 and 1120 and the active layer 1130 interposed Page 35 therebetween. The first and second conductivity-type semiconductor layers 1110 and 1120 may have a unilayer structure, or, alternatively, the first and second conductivity-type semiconductor layers 1110 and 1120 may have a multilayer structure including layers having different compositions, thicknesses, and the like, as necessary. For example, the first and second conductivity-type semiconductor layers 1110 and 1120 may have a carrier injection layer for improving electron and hole injection efficiency, or may have varicus types of superlattice structure, respectively.

[00111] The first conductivity-type semiconductor layer 1110 may further include a current spreading layer in a region adjacent to the active layer 1130. The current spreading layer may have a structure in which a plurality of InXAlVGa(XV)N layers having different compositions or different impurity contents are iteratively laminated or may have an insulating material layer partially formed therein.

[00112] The second conductivity-type semiconductor layer 1120 may further include an electron blocking layer in a region adjacent to the active layer 1130. The electron blocking layer may have a structure in which a plurality of layers having different compositions are laminated or may have one or more layers Page 36 including Al7Ga(])N. The electron blocking layer has a bandgap wider than that of the active layer 1130, thus preventing electrons from being transferred over the second conductivity-type (e.g., p-type) semiconductor layer 1120.

[00113] The light emitting laminate S may be formed by using metal-organic chemioal vapor deposition (MOCVD) -In order to fabricate the light emitting laminate 5, an organic metal compound gas (e.g., trimethyl gallium (TMG), trimethyl aluminum (IMA)) and a nitrogen-containing gas (ammonia (NH3), or the like) are supplied to a reaction container in which the substrate 1101 is installed as reactive gases, the substrate 1101 is maintained at a high temperature ranging from 900°C to 1,100°C, and while a gallium nitride-based compound semiconductor is being grown, an impurity gas is supplied as necessary to laminate the gallium nitride-based compound semiconductor as an undoped, n-type or p-type semiconductor. Silicon (Si) is a well known n-type impuriry and p-type impurity includes zinc (Zn), cadmium (Cd), beryllium (Be), magnesium (Mg), calcium (Ca), barium (Ba), and the like. Among them, magnesium (Mg) and zinc (Zn) are oommonly used.

[00114] Also, the active layer 1130 disposed between the first and second conductivity-type semiconductor layers 1110 and 1120 may have a multi-quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer Page 37 are alternately laminated. For example, in the case of a nitride semiconductor, a GaN/InGaN struoture may be used, or a single quantum well (SQW) structure may also be used.

[00115] In the present embodiment, an ohmic-contact layer 1120b may be formed on the second conductivity-type semiconductor layer 1120. The ohmic-contact layer ll2Ob may have a relatively high impurity concentration to have low ohmic-contact resistance to lower an operating voltage of the element and enhance element characteristics. The ohmio-oontact layer 1120b may be formed of a DaN layer, a InGaN layer, a ZnO layer, or a graphene layer.

[00116] The first or second electrodes lllOa and 1120a electrically connected to the first and second conductivity-type semiconductor layers 1110 and 1120, respectively, may be made of a material such as silver (Ag), nickel (Ni) , aluminum (Al) , rhodium (Rh) , palladium (Pd) iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), or the like, and may have a structure including two or more layers such as Ni/Ag, Zn/Ag, Ni/Al, Zn/Al, Pd/Ag, Pd/Al, Ir/Ag. Ir/Au, Pt/Ag, Pt/Al, Ni/Ag/Pt, or the like.

[00117] The LED chip 741-1 illustrated in FIG. 13 may have a structure in which the first and second electrodes lllOa. and 1120a face in the same direction as that of a light extraction surface, for example. However, conversely, Page 38 the first and second electrodes lllOa and 1120a may also be mounted to face in a direction opposite to the light extraction surface in a flipchip structure [00118] <second embodiment of LED 741> [00119] FIG. 14 illustrates a different type LED 741-2 employable as the LED 741 according to an embodiment of the present inventive concept.

[00120] In the case of LED 741-2 according to an embodiment of the present inventive ooncept, current spreading efficiency and heat dissipation efficiency in a chip unit of a illuminating apparatus according to the present embodiment can be enhanced, and since high output, large LED 741-2 is obtained, it can be appropriately employed in consideration of a purpose of application of the illuminating apparatus 700 according to the present embodiment.

[00121] Referring to FTG. 14, the LED 741-2 according to the present embodiment includes a first conductivity-type semiconductor layer 1210, an active layer 1230, a second conductivity-type semiconductor layer 1220, a second electrode layer 122Gb, an insulating layer 1250, a first electrode layer 1210a, and a substrate 1201, laminated seguentially. Here, in order to be electrically connected to the first conductivity-type semiconductor layer 1210, the first electrode layer i2ioa includes one or more Page 39 contact holes H extending from one surface of the first electrode layer 1210a to at least a partial region of the first conductivity-type semiconductor layer 1210 and electrically insulated from the second conductivity-type semiconductor layer 1220 and the active layer 1230.

However, the first electrode layer 1210a is not an essential element in the present embodiment.

[00122] The contact hole H extends from an interface of the first electrode layer 1210a, passing through the second electrode layer 122Gb, the second conductivity-type semiconductor layer 1220, and the active layer 1230, to the interior of the first conductivity-type semiconductor layer 1210. The contact hole H extends at least to an interface between the active layer 1230 and the first conductivity-type semiconductor layer 1210 and, preferably, extends to a portion of the first conductivity-type semiconductor layer 1210. However, the contact hole H is formed for electrical connectivity and current spreading of the first conductivity-type semiconductor layer 1210, so the purpose of the presence of the contact hole H is achieved when it is in contact with the first conductivity-type semiconductor layer 1210. Thus, it is not necessary for the contact hole H to extend to an external surface of the first conductivity-type semiconductor layer 1210.

[00123] The second electrode layer 1220b formed on the Page 40 second conductivity-type semiconductor layer 1220 may be selectively made of a material among silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), and the like, in consideration of a light reflecting function and an ohmic-contact function with the second conductivity-type semiconductor layer 1220, and may be formed by using a process such as sputtering, deposition, or the like.

[00124] The contact hole H may have a form penetrating the second electrode layer 1220b, the second conductivity-type semiconductor layer 1220, and the active layer 1230 so as to be connected to the first conductivity-type semiconductor layer 1210. The contact hole H may be formed through an etching process, e.g., inductively coupled plasma-reactive ion etching (IOP-RIE), or the like.

[00125] The insulating layer 1250 is formed to cover a side wall of the contact hole H and a surface of the second conductivity-type semiconductor layer 1220. In this case, at least a portion of the first conductivity-type semiconductor layer 1210 corresponding to a lower surface of the contact hole H may be exposed. The insulating layer 1250 may be formed by depositing an insulating material such as SiC2, SiCXNV, or SXNV.

[00126] The first electrode layer i2lOa including a Page 41 conductive via formed by filling a conductive material is formed within the contact hole H. Subsequently, the substrate 1201 is formed on the second electrode layer 1210a. In this structure, the substrate 1201 may be electrically connected by the conductive via connected to the first conductivity-type semiconductor layer 1210.

[00127] The substrate 1201 may be made of a material including any one of Au, Ni, Al, Cu, W, Si, Se, GaAs, SiA1, Ge, SiC, A1N, Al202, GaN, A1GaN and may be formed through a process such as plating, sputtering, deposition, bonding, or the like. But the present inventive concept is not limited thereto.

[00128] In order to reduce contact resistance, the amount, a shape, and a pitch of the contact hole H, a contact area of the contact hole H with the first conductivity-type semiconductor layer 1210, and the like, may be appropriately regulated. The contact holes H nay be arranged to have various shapes in rows and columns to improve a current flow. In this case, the conductive via may be surrounded by the insulating layer 1250 so as to be electrically separated from the active layer 1230 and the second conduobiviby-Lype semiconducbot layer 1220.

[00129] <Third embodiment of LED 741> [00130] Meanwhile, in general, when the LED 741 is driven, a partial amount of energy is emitted as thermal energy as well as optical energy. Thus, with the Page 42 iiiuminating apparatus 700 employing the LED 741, heat dissipation should be considered. The iiiuminating apparatus 700 includes a heat dissipation unit such as a heat sink, or the like, and a heating problem may be more effectively improved by using the LED 741 having a low heating value. As the LED 741 that meets such requirements, an LED including, for example, nano-structures (hereinafter, referred to as nano-LED') may be used.

[00131] Referring to FIG. 15, an LED 741-3 includes a plurality of nano-light emitting structures Sn formed on a substrate 1301. In this example, it is illustrated that the nano-light emitting structure Sn has a core-shell structure as a rod structure, but the present inventive concept is not limited thereto and the nano-light emitting structure may have a different structure such as a pyramid structure.

[00132] The LED 741-3 includes a base layer 1310' formed on the substrate 1301. The base layer 1310' is a layer providing a growth surface for the nano-light emitting structure Sn, which may be a first conductivity-type semiconductor layer. A mask layer 1350 having an open area for the growth of the nario-light emitting structure (in particular, a core) may be formed on the base layer 1310' . The mask layer 1350 may be made of a dielectric material such as SiC2 or SNX.

[00133] In the nano-light emitting structure Sn, a Page 43 first conductivity-type nanocore 1310 is formed by selectively growing a first conductivity-type semiconductor by using the mask layer 1350 having an open area, and an active layer 1330 and a second conductivity-type semiconductor layer 1320 are formed as shell layers on a surface of the nanocore 1310. Accordingly, the nano-light emitting structure Sn may have a core-shell structure in which the first conductivity-type semiconductor is the nanocore and the active layer 1330 and the second conductivity-type semiconductor layer 1320 enclosing the nanocore are shell layers.

[00134] The LED 741-3 includes a filler material 1370 filling spaces between the nano-light emitting structures Sn. The filler material 1370 may structurally stabilize the nano-light emitting structures Sn. The filler material 1370 may be made of a transparent material such as SiC2, SiN, or a silicone resin, or a reflective material such as polymer (Nylon) , PPA, PCE, silver (Ag) , or aluminum (Al) but the present inventive concept is not limited thereto.

An ohmic-contact layer 1320b may be formed on the nano-light emitting structures Sn and connected to the second conducbiviLy-bype semiconducbcr layer 1320. The LED 741-3 includes first and second electrodes 1310a and 1320a connected to the base layer 1310' formed of the first conductivity-type semiconductor and the ohmic-contact layer 1320b, respectively.

Page 44 [00135] By forming the nano-light emitting structures Sn such that they have different diameters, components, and doping densities, light having two or more different wavelengths may be emitted from the single element. By appropriately adjusting light having different wavelengths, white light may be implemented without using phosphors in the single element, and light having various desired colors or white light having different color temperatures may be implemented by combining a different LED with the foregoing device or combining wavelength conversion materials such as phosphors.

[00136] The LED 741-3 using the nano-light emitting structures Sn has increased luminous efficiency by increasing a light emitting area by utilizing the nano-structures, and prevents a degradation of efficiency due to polarization by obtaining a non-polar active layer, thus improving drop characteristics.

[00137] Meanwhile, as for the LED 741-3 employed in the illuminating apparatus 700 according to the present embodiment, LEDs having various structures other than the foregoing LED may be used. For example, an LED in which surface-plasmon polarition (SEP) are formed in a metal-dielectric boundary to interact with guantum well exciton to thus have significantly improved light extraction efficiency may also be advantageously used.

[00138] <Fourth embodiment of LED 741> Page 45 [00139] FIG. 16 illustrates an embodiment of the LED 741 employed in a form different from the foregoing example.

[00140] Referring to FIG. 16, an LED 741-4 includes a light emitting laminate S disposed in one surface of a substrate 1401 and first and second electrodes 141Cc and 142Cc disposed on the opposite side of the substrate 1410 based on the light emitting laminate S. Also, the LED 741- 4 includes an insulating unit 1450 covering the first and second electrodes 141Cc and 142Cc. The first and second electrodes 141Cc and 142Cc may be electrically connected to first and second electrode pads 141Cc and 142Cc by electrical connection units 1410d and 1420d.

[00141] The light emitting laminate S may include a first conductivity-type semiconductor layer 1410, an active layer 1430, and a second conductivity-type semiconductor layer 1420 seguentially disposed on the substrate 1401.

The first electrode 141Cc may be provided as a conductive via connected to the first conductivity-type semiconductor layer 1410 through the second conductivity-type semiconductor layer 1420 and the active layer 1430. The second electrode 142Cc may be connected to the second conductivity-type semiconductor layer 1420.

[00142] The insulating layer 1450 has an open area exposing at least portions of the first and second electrodes 141Cc and 142Cc, and the first and second electrode pads 141Cc and 142Cc may be connected to the Page 46 first and second electrodes 141Cc and 142Cc.

[00143] The first and second electrodes 141Cc and 142Cc may be made of a conductive material having ohmic characteristics with respect to the first and second conductivity-type semiconductor layers 141C and 142C and may have a unilayer or multilayer structure, respectively.

For example, the first and second electrodes 141Cc and 142Cc may be formed by depositing or sputtering one or more of silver (Ag) , aluminum (Al) , nickel (Ni) , chromium (Cr) a transparent conductive oxide (ICC), and the like. The first and second electrodes 141Cc and 142Cc may be disposed in the same direction and may be mounted as a so-called flip-chip on a lead frame, or the like, as described hereinafter. In this case, the first and second electrodes 141Cc and 1420c may be disposed to face in the same direction.

[00144] In particular, the first electrode 141Cc may have a conductive via V connected to the first conductivity-type semiconductor layer 141C through the second conductivity-type semiconductor layer 1420 and the active layer 143C within the light emitting laminate C, and may be elecLrlcally connecL.ed Lo a firsL elecLrical connection unit 1410d.

[00145] The amount, a shape, a pitch, a contact area with the first conductivity-type semiconductor layer 141C, and the like, of the conductive via V and the first Page 47 electrical connection unit 1410d may be appropriately regulated in order to lower contact resistance, and the conductive via V and the first electrical connection unit 1410d may be arranged in rows and columns to improve current flow.

[00146] The amount of vias V and contact areas thereof may be adjusted such that the area of the plurality of vias V in rows and columns occupying on the plane of the regions in which they are in contact with the first conductivity-type semiconductor ranges from 1% to 5% of the planar area (the planar area of the light emitting laminate 0) of the light emitting device region. A radius (half (1/2) of the diameter Dl) of the via may range, for example, from 5tm to 20;Lm, and the number of vias V may be 1 to 50 per light emitting device region according to a width of the light emitting region. Although different according to a width of the light emitting device region, two or more vias may be provided. A distance between the vias V may range from urn to 500 um, and the vias V may have a matrix structure including rows and columns. Preferably, the distance between vias may range from 150 um to 450 urn. If the distance between the vias is smaller than 100 urn, the amount of vias V is increased to relatively reduce a light emitting area to lower luminous efficiency, and if the distance between the vias is greater than 500 1JM, current Page 48 spreading suffers to degrade luminous efficiency. A depth of the conduotive via V may range from 0.5pin to 5.ORm although the depth of the conductive via V may vary according to a thickness of the second conductivity-type semiconductor layer 1420 and the active layer 1430.

[00147] Another electrode structure may include the second electrode 142Cc directly formed on the second conductivity-type semiconductor layer 1420 and a second electrical connection portion 1420d formed on the second electrode 142Cc. In addition to having the function of forming electrical-ohmic connection with the second conductivity-type semiconductor layer 1420, the second electrode 142Cc may be made of a light reflective material, whereby, as illustrated in FIG. 16, in a state in which the LED 741-4 is mounted as a so-called flip chip structure, light emitted from the active layer 1430 can be effectively emitted toward the substrate 1401. Of course, the second electrode 142Cc may be made of a light-transmissive conductive material such as a transparent conductive oxide, according to a main light emitting direction.

[00148] As for the second electrode 142Cc, among the first and second electrodes, for example, on the basis of the second conductivity-type semiconductor layer 1420, an ohmic-electrode of an Ag layer is laminated as the second electrode 142Cc. The Ag ohmic-electrode also serves as a Page 49 light reflective layer. A single layer of nickel (Ni), titanium (Ti) , platinum (Pt) , or tungsten (W) or an alloy layer thereof may be alternately laminated on the Ag layer.

In detail, Ni/Ti layers, 11W/Pt layers, or Ii/W layers may be laminated or these layers may be alternately laminated on the Ag layer.

[00149] As for the first electrode 1410c, on the basis of the first conductivity-type semiconductor layer 1410, a chromium (Cr) layer may be laminated, and Au/Pt layers may be sequentially laminated on the Cr]ayer, or on the basis of the first conductivity-type semiconductor layer 1410, an Al layer may be laminated and Ti/Ni/Iu layers may be sequentially laminated on the Al layer.

[00150] In order to enhance ohmic characteristics or reflecting characteristics, the first and second electrodes 141Cc and 142Cc may employ various materials or lamination structures other than those of the foregoing embodiments.

[00151] The two electrode structures as described above may be electrically separated by the insulating layer H50.

The insulating layer 1450 may be made of any material as long as it has electrically insulating properties.

Preferably, a material having a low degree of light absorption is used. For example, a silicon oxide or a silicon nitride such as SiC2, SiON, SiN, or the like, may be used. If necessary, a light reflective filler may Page 50 be dispersed in the light-transmissive material to form a light reflective structure.

[00152] The first and second electrode pads 141Cc and 142Cc may be connected to the first and second electrical connection units 1410d and 1420d to serve as external terminals of the IJED 741-4, respectively. Here, an insulating material layer 1451 may be disposed in partial regions between the first and second electrical connection units l4lCd and 142Cd and the first and second electrode pads 141Cc and 142Cc.

[00153] The first and second electrode pads 141Cc and 142Cc may be made of gold (Au), silver (Ag), aluminum (Al), titanium (Ti) , tungsten (W) , copper (Cu) , tin (Sn) , nickel (Ni), platinum (Pt), chromium (Cr), NiSn, TiW, AuSn, or a eutectic metal thereof. In this case, when the LED is mounted on a package body 21CC, the first and second electrode pads 141Cc and 142Cc may be bonded by using the euteotic metal, so solder bumps generally required for flip chip bonding may not be used. The use of a eutectic metal advantageously obtains superior heat dissipation effects in the mounting method in comparison to the case of using solder bumps. In Lhis case, in order L.o obL.ain excellenb heat dissipation effects, the first and second electrode pads 141Cc and 142Cc may be formed to occupy a relatively large area.

[00154] Also, a buffer layer may be formed between the Page 51 light emitting structure S and the substrate 1401. The buffer layer may be employed as an undoped semiconductor layer made of a nitride, or the like, to alleviate lattice defects in the light emitting structure grown thereon.

[00155] In the present embodiment, the substrate 1401 may have first and second main surfaces opposing one another, and an uneven structure (e.g., a depression and protrusion pattern) may be formed on at least one of the first and second main surfaces. The uneven structure formed on one surface of the substrate 1401 may be formed by etching a portion of the substrate 1401 so as to be made of the same material as that of the substrate 1401.

Alternatively, the uneven structure may be made of a heterogeneous material different from that of the substrate 1401.

[00156] In the present embodiment, since the uneven structure is formed on the interface between the substrate 1401 and the first conductivity-type semiconductor layer 1410, paths of light emitted from the active layer 1430 can be of diversity, and thus, a light absorption ratio of light absorbed within the semiconductor layer can be reduced and a iighb scaLbering rabio can be increased, increasing light extraction efficiency.

[00157] In detail, the uneven structure may be formed to have a regular or irregular shape. The heterogeneous material used to form the uneven structure may be a Page 52 transparent conductor, a transparent insulator, or a material having excellent reflectivity. Here, as the transparent insulator, a material such as Sj02, SiN, A1203, HID, Ti02, or ZrD may be used. As the transparent conductor, a transparent conductive oxide (ICC) such as ZnC, an indium oxide containing an additive (e.g., Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Sn), or the like, may be used. As the reflective material, silver (Ag), aluminum (Al), or a distributed Bragg reflector (DBR) including multiple layers having different refractive indices, may be used. However, the present inventive concept is not limited thereto.

[00158] Meanwhile, the substrate 1401 may be removed from the first conductivity-type semiconductor layer 1410.

To remove the substrate 1401, a laser lift-off (LLO) process using a laser, an etching or a polishing process may be used. Also, after the substrate 1401 is removed, depressions and protrusions may be formed on the surface of the first conductivity-type semiconductor layer 1410.

[00159] As illustrated in FIG. 16, the LED 741-4 is mounted on the package body 2100. The package body 2100 may be a semiconducbor subsLraLe such as a silicon (Si) substrate, an insulating substrate, or a conductive substrate. Surface electrodes 2210a and 2220a and rear electrodes 2210b and 2220b are formed on upper and lower surfaces thereof, and conductive vias Cl and 02 are formed Page 53 to penetrate through the package body 2100 to oonnect the surface eleotrodes 2210a and 2220a and the rear electrodes 2210b and 2220b.

[00160] In the present embodiment, the LED 741-4 can uniformly spread a current, and obtain excellent heat dissipation effects in a chip unit since a contact area between the LED and the package body is increased.

[00161] <Fifth embodiment of LED 741> [00162] FIG. 17 illustrates an LED 741-5, e.g., an LED implemented as a so-called a chip scale package (DSP) according to another embodiment of the present inventive concept.

[00163] In detail, referring to FIG. 17, the LED 741-5 according to the present embodiment may include the light emitting laminate S. A wavelength conversion layer 1540 may be formed on the light emitting laminate S. The LED 741-5 package according to the present embodiment includes a package body 2100 including first and second electrode structures 2210 and 2220, and the LED 741-5 and a lens 2400 disposed on the package body 2100.

[00164] The package body 2100 may be a silicon (Si) substrate, a conductive support substrate, or an insulating support substrate having two or more conductive vias. The conductive vias are connected to the first electrode l5lOa and the second electrode 1520a of the light emitting Page 54 laminate S. [00165] The light emitting laminate S has a lamination structure including the first and second conductivity-type semioonductor layers 1510 and 1520 and the active layer 1530 disposed therebetween. In the present embodiment, the first and second conductivity-type semiconductor layers 1510 and 1520 may be p-type and n-type semiconductor layers, respectively, and may be made of a nitride semiconductor, e.g., A1XInVGa(-XY)N (0«=x«=1, O«=y«=l, 0«=x+y«=l) . However, besides a nitride semiconductor, a GaAs-based semiconductor or GaP-based semiconductor may also be used.

[00166] The active layer 1530 formed between the first and second conductivity-type semiconductor layers 1510 and 1520 may emit light having a predetermined level of energy according to electron-hole recombination, and may have a multi-quantum well (MQW) structure in which a quantum well layer and a guantum barrier layer are alternately laminated.

In the case of the MQW structure, for example, an InGaN/GaN or A1GaN/GaN structure may be used.

[00167] Meanwhile, the first and second conductivity-type semiconductor layers 1510 and 1520 and the active layer 1530 may be formed by using a semiconductor growth process such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (14SF), hydride vapor phase epitaxy (HyPE), or the like.

[00168] The LED 741-5 illustrated in FIG. 17 is in a Page 55 state in which a grcwth substrate was removed therefrcm, and a depressicn and protrusion pattern P may be formed on the surface from which the growth substrate was removed.

[00169] A wavelength conversion film 1540 having phosphors may be formed on the depression and protrusion pattern.

[00170] The LED 741-5 includes the first and second electrodes lSlOa and 1520a connected to the first and second conductivity-type semiconductor layers 1510 and 1520, respectively. The first electrode 1510a includes a conductive via 03 connected to the first conductivity-type semiconductor layer 1510 through the second conductivity-type semiconductor layer 1520 and the active layer 1530.

An insulating layer 1550 is formed between the conductive via 03 and the active layer 1530 and the second conductivity-type semiconductor layer 1520 to prevent a short circuit.

[00171] A single conductive via 03 is illustrated, but two or more conductive vias 03 may be provided and arranged in various forms of rows and columns to promote current spreading.

[00172] As for the plurality of vias 03 forming rows and columns, like other embodiments of the present inventive concept, the number of the vias and a contact area thereof may be adjusted such that an area taken by the Page 56 vias on the plane of the region in oontact with the first oonduotivity-type semiconductor layer 1510 ranges from 1% to 5% of the planar area of the light emitting device region (e.g., the planar area of the light emitting laminate 3). For example, a radius (e.g., half of the diameter Dl) of the via may range from 5jm to 50tm and the number of the vias 03 may range from 1 to 50 per light emitting device region according to the width of the light emitting device region. Preferably, two or more vias 03 may be provided, although numbers thereof may vary depending on the width of the light emitting device region, and the vias 03 may have a matrix structure with rows and columns in which a distance therebetween ranges from lOOum to 500um. More preferably, the distance between the vias may range from 150 um to 450 um. If the distance between the conductive vias 03 is smaller than 100 um, the number of vias 03 may be increased to relatively reduce a light emitting area to lower luminous efficiency, and if the distance therebetween is greater than 500 um, current spreading suffers, degrading luminous efficiency. A depth of the conductive via 03 may range from 0.5trn to 5.0trn, although the depth of the conductive via 03 may vary according to thicknesses of the second conductivity-type semiconductor layer 1520 and the active layer 1530.

[00173] Like the embodiment of FIG. 16, among the first Page 57 and second electrodes 1510a and 1520a, on the basis of the second conductivity-type semiconductor layer 1520, an ohmic-electrode of an Ag layer is laminated as the second electrode 1520a. The Ag ohmic-electrode also serves as a light reflective layer. A single layer of nickel (Ni), titanium (Ti) , platinum (Pt) , or tungsten (N) or an alloy layer thereof may be alternately laminated on the Ag layer.

In detail, Ni/Ti layers, TiW/Pt layers, or Ti/W layers may be laminated or these layers may be alternately laminated on the Ag layer.

[00174] As for the first electrode 1510a, on the basis of the first conductivity-type semiconductor layer 1510, a chromium (Cr) layer may be laminated, and Au/Pt layers may be sequentially laminated on the Cr layer, or on the basis of the first conductivity-type semiconductor layer 1510, an Al layer may be laminated and Ti/Ni/Au layers may be sequentially laminated on the Al layer.

[00175] In order to enhance ohmic characteristics or reflecting characteristics, the first and second electrodes 1510a and 1520a may employ various materials or lamination structures other than those of the foregoing embodiments.

[00176] The package body 2100 employed in this example may include a resin as a basic material thereof, and may include nanofibers and light reflective powder dispersed in the resin. Here, the package body 2100 and the LED 741-5 Page 58 may be bonded by bonding layers 31 and 32. The bonding layers B1 and 32 may be made of an electrically insulating material. For example, the electrically insulating material may include a resin material such as an oxide or silicone resin such as SiC2, SiN, or the like, an epoxy resin, and the like. This process may be implemented by applying the first and second body layers 81 and 32 to respective bonding surfaces of the LED 741-5 and the package body 2100 and subsequently bonding them.

[00177] A ccntact hole is fcrmed from a lcwer surface of the package body 2100 so as to be connected to the first and second electrodes lSlOa and 1520a of the LED 741-5 as bonded. An insulating layer 2550 may be formed on a lateral surface of the contact hole and on a lower surface cf the package body 2100. Tn a case in which the package body 2100 is a silicon substrate, the insulating layer 2550 may be provided as a silicon oxide film through thermal oxidation. The contact hole is filled with a conductive material to form the first and second electrode structures 2210 and 2220 such that they are connected to the first and second electrodes 1510a and 1520a. The first and second electrode structures 2210 and 2220 may include seed layers Si and 52 and plating charged units 2210c and 2220c formed through a plating process by using the seed layers Si and 52.

[00178] The chip-scale package (DSP) as described above Page 59 and as illustrated in FIG. 17 does not require an additional paokage, thus reducing a size of the paokage and simplifying a manufacturing process, is appropriate for mass-production. Also, since an optical structure such as a lens can be integrally manufactured, the CSP can be appropriately employed in a illuminating apparatus according to the present embodiment.

[00179] A plate according to the present embodiment will be described in detail with reference back to FIG. 10.

[00180] The plate 720 is provided in a region in which the light source unit 740 is mounted, and may include a circuit board having a wiring pattern required for the light source driving device 100. Here, the circuit board may be made of a material having an excellent heat dissipation function and excellent light reflectivity. For example, the circuit board may include an FF4-type printed circuit board (PCB) and may be made of an organic resin material containing epoxy, triazine, silicone, polyimide, or the like, and any other organic resin materials. The circuit board may also be made of a ceramic material such as a silicon nitride, A1N, A1203, or the like, or a metal and a mebal compound. An MCCVD or a flexible PCB (FPCB) that can be freely change in form thereof may also be used.

[00181] <First embodiment of plate 720> [00182] As illustrated in FIG. 18, a plate 720-1 may include an insulating substrate 3110 including Page 60 predetermined circuir patterns 3111 and 3112 formed on one surfaoe thereof, an upper thermal diffusion plate 3140 formed on the insulating substrate 3110 such that the upper thermal diffusion plate 3140 is in contact with the circuit patterns 3111 and 3112, and dissipating heat generated by the LED 741, and a lower thermal diffusion plate 3160 formed on the other surface of the insulating substrate 3110 and transmitting heat, transmitted from the upper thermal diffusion plate 3140, outwardly.

[00183] The upper thermal diffusion plate 3140 and the lower thermal diffusion plate 3160 may be oonneoted by at least one through hole 3150 that penetrates through the insulating substrate 3110 and has plated inner walls, so as to be heat-conducted with one another.

[00184] In the insulating substrate 3110, the circuit patterns 3111 and 3112 may be formed by cladding a ceramic or epoxy resin-based FR4 core with oopper and performing an etching process thereon. An insulating thin film 3130 may be formed by coating an insulating material on a lower surface of the substrate 3110.

[00185] <Second embodiment of plate 720> [00186] FIG. 19A illustrates another example of a plate.

As illustrated in FIG. 19A, a plate 720-2-1 includes a first metal layer 3210-1, an insulating layer 3220-1 formed on the first metal layer 3210-1, and a second metal layer Page 61 3230-1 formed on the insulating layer 3220-1. A step region A' allowing the insulating layer 3220-1 to be exposed may be formed in at least one end portion of the plate 720-2-1.

[00187] The first metal layer 3210-1 may be made of a material having excellent exothermic characteristics. For example, the first metal layer 3210-1 may be made of a metal such as aluminum (Al), iron (Fe), or the like, or an alloy thereof. The first metal layer 3210-1 may have a unilayer structure or a multi-layer structure. The insulating layer 3220-1 may basically be made of a material having insulating properties, and may be formed with an inorganic material or an organic material. For example, the insulating layer 3220-1 may be made of an epoxy-based insulating resin, and may include metal powder such as aluminum (Al) powder, or the like, in order to enhance thermal conductivity. The second metal layer 3230-1 may generally be formed of a copper (Cu) thin film.

[00188] As illustrated in FIG. 19A, in the plate 720-2- 1 according to the present embodiment, a length of an exposed region at one end portion of the insulating layer 3220-1, e.g., an insulation length, may be greater than a thickness of the insulating layer 3220-1. Here, the insulation length refers to a length of the exposed region of the insulating layer 3220-1 between the first metal Page 62 layer 3210-1 and the second metal layer 3230-1. r7hen viewed from above, a width of the exposed region of the insulating layer 3220-1 is an exposure width Wi. The region A' in FIG. 19A is removed through a grinding process, or the like, during the manufacturing process of the plate 720-2-1. The region as deep as depth h' downwardly from a surface of the second metal layer 3230-1 is removed to expose the insulating layer 3220-1 by the exposure width Wi, forming a step structure. If the end portion of the plate 720-2-1 is not removed, the insulation length may be equal to a thickness (hl+h2) of the insulating layer 3220-1, and by removing a portion of the end portion of the plate 720-2-1, an insulation length equal to approximately Wi may be additionally secured.

Thus, when a withstand voltage of the plate 720-2-1 is tested, the likelihood of contact between the two metal layers 3210-1 and 3230-1 in the end portions thereof is minimized.

[00189] FIG. lOB is a view schematically illustrating a structure of a plate 720-2-2 according to a modification of FIG. 19A. Referring to FIG. lOB, the plate 720-2-2 includes a first metal layer 3210-2, an insulating layer 3220-2 formed on the first metal layer 3210-2, and a second metal layer 3230-2 formed on the insulating layer 3220-2.

The insulating layer 3220-2 and the second metal layer Page 63 3230-2 include regions removed at a predetermined tilt angle ei, and the first metal layer 3210-2 may also include a region removed at the predetermined tilt angle ei.

[00190] Here, the tilt angle ei may be an angle between an interface between the insulating layer 3220-2 and the seoond metal layer 3230-2 and an end portion of the insulating layer 3220-2. The tilt angle ei may be selected to secure a desired insulation length I in consideration of a thickness of the insulating layer 3220-2. The tile angle ei may be selected from within the range of 0 < ei < 90 (degrees) . As the tilt angle ei is increased, the insulation length I and a width W2 of the exposed region of the insulating layer 3220-2 is decreased, so in order to secure a larger insulation length, the tilt angle ei may be selected to be smaller. For example, the tilt angle nay be selected from within the range of 0 < ei «= 45 (degrees) [00191] <Third embodiment of plate 720> [00192] FTG. 20 schematically illustrates another example of a substrate. Referring to FIG. 20, a plate 720- 3 includes a metal support substrate 3310 and resin-coated copper (FCC) 3320 formed on the metal support substrate 3310. The FCC 3320 may include an insulating layer 3321 and a conductive pattern or a copper foil 3322 laminated on the insulating layer 3321. A portion of the FCC 3320 may be removed to form at least one recess in which the LED 741 Page 64 may be installed. The plate 720-3 has a structure in which the LCD 3320 is removed from a lower region of the LED 741 or the LED package and the LED package is in direct contact with the metal support substrate 3310. Thus, heat generated by the LED 741 or the LED package is directly transmitted to the metal support substrate 3310, enhancing heat dissipation performance. The LED 741 or the LED package may be electrically connected or fixed through solders 3340 and 3341. A protective layer 3330 made of a liquid photo solder resist (PSR) may be formed on an upper portion of the copper foil 3322.

[00193] <Fourth embodiment of plate 720> [00194] FIG. 21A and 213 schematically illustrate another example of a plate. A plate 720-4 according to the present embodiment includes an anodized metal substrate having excellent heat dissipation characteristics and incurring low manufacturing costs. FIG. 21A is a cross-sectional view of the plate 720-4 and FIG. 213 is a top view of the plate 720-4.

[00195] Referring to FIGS. 21A and 21B, the plate (anodized metal substrate) 720-4 may include a metal board 3410, an anodic oxide film 3420 formed on the metal board 3410, and electrical wirings 3430 formed on the anodic oxide film 3420.

[00196] The metal board 3410 may be made of aluminum Page 65 (Al) or an Al alloy that may be easily obtained at low cost.

Besides, the metal board 3410 may be made of any other anodizable metal, for example, a material such as titanium (Ti), magnesium (Mg), or the like.

[00197] Aluminum oxide film (Al2C) 3420 obtained by anodizing aluminum has a relatively high heat transmission oharacteristios ranging from about 10 r/mK to 30 W/mK.

Thus, the plate (anodized metal substrate) 720-4 has superior heat dissipation characteristics as compared to those of a PCB, an MCPCB, or the like, of conventional polymer substrates.

[00198] <Fifth embodiment of plate 720> [00199] FIG. 22 schematically illustrates another example of a substrate. As illustrated in FIG. 22 a plate 720-5 may include a metal substrate 3510, an insulating resin 3520 coated on the metal substrate 3510, and a circuit pattern 3530 formed on the insulating resin 3520.

Here, the insulating resin 3520 may have a thickness equal to or less than 200im. The insulating resin 3520 may be laminated on the metal substrate 3510 in the form of a solid film or may be coated in the liquid form using spin coating or a blade. Also, the circuit pattern 3530 may be formed by filling a metal such as copper (Cu), or the like, in a circuit pattern intaglioed on the insulting layer 3520.

The LED 741 may be mounted to be electrically connected to Page 66 the circuit pattern 3530.

[00200] <Sixth embodiment of plate 720> [00201] Meanwhile, the plate 720-6 may include a flexible POB (FPCB) that can be freely deformed. In detail, as illustrated in FIG. 23, the plate 720-6 includes a flexible circuit board 3610 having one or more through holes 3611, and a support substrate 3620 on which the flexible circuit board 3610 is mounted. A heat dissipation adhesive 3640 may be provided in the through hole 3611 to couple a lower surface of the LED 741 and an upper surface of the support substrate 3620 to one another. Here, the lower surface of the LED 741 may be a lower surface of a chip package, a lower surface of a lead frame having an upper surface on which a chip is mounted, or a metal block.

A circuit wiring 3630 is formed on the flexible circuit board 3610 and electrically connected to the LED 741.

[00202] In this manner, since the flexible circuit board 3610 is used, thickness and weight can be reduced, obtaining reduced thickness and weight and reducing manufacturing costs, and since the LED 741 is directly bonded to the support substrate 3620 by the heat dissipation adhesive 3640, heat dissipation efficiency in dissipating heat generated by the LED 741 can be increased.

[00203] hereinafter, the light source driving device 100, a different component of the illuminating apparatus Page 67 according to the present embodiment will be described with reference back to FIG. 1O.

[00204] The light source driving device 100 includes the transformer unit 110 including the primary winding part 111 and the secondary winding part 112 electromagnetically coupled to the primary winding part ill and transforming the applied external power, the rectifying diode 120 rectifying output power from the secondary winding part 112 of the transformer unit 110, the filter unit 140 having the input terminal and the output terminal outputting light source driving power, delivering rectified power, applied to the input terminal from the rectifying diode 120 when the rectifying diode 120 is turned on, to the output terminal, and storing a partial amount of the rectified power, and an open loop preventing unit 130 providing a closed loop to the filter unit 140 such that the power stored in the filter unit 140 may be applied to the output terminal.

[00205] Here, the primary winding part 111 includes external input terminals llla and lllb receiving external power 10 from the socket 710, and may have impedance set to allow the ballast stabilizer 20 to output a normal amount of power. Namely, the present embodiment may be understood as a illuminating apparatus 700 including the light source driving device 100 of FIG. 1.

Page 68 [00206] According to the present embodiment, a illuminating apparatus using a light source driving device that is directly compatible with a ballast stabilizer can be obtained.

[00207] Meanwhile, light finally or eventually generated by the illuminating apparatus 700 may be white light similar to that of an existing fluorescent lamp.

However, the present inventive concept is not limited thereto and the illuminating apparatus 700 according to the present embodiment may be provided for the purpose of emitting visible light, infrared light, or ultraviolet light, besides white light.

[00208] <First embodiment of white light implementation: combination of phosphors> [00209] In order for the illuminating apparatus 700 to emit white light, for example, the illuminating apparatus 700 may be implemented such that a light source unit according to the present embodiment includes a blue LED and a wavelength conversion unit having wavelength conversion materials emitting wavelength-converted light upon being directly or indirectly excited by output light from the blue LED. Here, white light may be a mixture color of light from the blue LED and light from the wavelength conversion unit. For example, white light may be implemented by combining a yellow phosphor to the blue LED, Page 69 or by combining at least one of yellow, red, and green phosphors to the blue LED. Also, the wavelength conversion unit may be provided in units of LED chips. For example, the wavelength conversion layer 1540 illustrated in FIG. 17 may be understood as a wavelength conversion unit mentioned herein.

[00210] Meanwhile, phosphors used in the illuminating apparatus 700 may have the following empirical formulas and colors.

[00211] In case of oxide-based phosphors, yellow and green phosphors may include a composition of Y, Lu, Se, La, Gd, Sm)3(Ga, Al)O2:Ce. A blue phosphor may include a composition of EaMgAloG7:Eu, 3Sr3(P04)2 Cad: Eu.

[00212] In case of silicate-based phosphors, yellow and green phosphors may include a composition of (Ba, Sr)25i04:Eu, and yellow and orange phosphors may include a composition of (Ba, Sr)SiOE:Eu.

[00213] In case of nitride-based phosphors, a yellow phosphor may include a composition of -SiAlON:Eu, a yellow phosphor may include a composition of (La, Gd, Lu, Y, Sc)1SiNl:Ce, and an orange phosphor may include a composition of c-SiAlCN:Eu. A red phosphor may include at least one of compositions of (Sr, Ca)AlSiN:Eu, (Sr, Ca)AlSl(ON):Eu, (Sr, Ca)2Sl5N:Eu, (Sr, Ca)2Si(ON)k:Eu, fluoride-based phosphors(K2SiF5:Mn'1), and (Sr, Ba)SiA14N7:Eu.

[00214] In case of a sulfide-based phosphors, a red Page 70 phosphor may inolude a oomposition of at least one of (Sr, Ca)S:Eu and (Y, Gd)202S:Eu, and a green phosphor may include a composition of SrGa2S4:Eu.

[00215] Table 1 below shows types of phosphors in applications fields of white light emitting devices using a blue LED (440 run to 460 nm)

[Table 1]

Purpose Phosphors 3-SiA10N:Eu2 (Ca, 5r)Ai5iN:EuZ+

LED TV BLU 2+

L25i6011:Oe ____________________________________ K2S1F2, :Mn4' Lu3A1:012: Ce' Ca-a-SiMON: Eu21 L2SIrN11: Ce' Lighting (Ca, Sr)AlSiN:Euz Y5A1 5012: Ce K2SiF2, :t4n' Lu3A12O12: Ce2' Ca-a-SiMON: Eu2' L5SiN11:CeB+ Side View -- (Ca, Sr) AiSiN1: Eu (Mobile, Note PC) Y2A15O12:Ce (Sr. Ba, Ca, Mg),Si0i:Eu7 K2S1F2, : F4n4 Lu3A12O12: Ce°' Ca-a-SiMON: Eu2' Electrical component L35i6N11:Ce2+ (Head Lamp, etc.) (Ca, Sr)AlSiN;:Eu2 Y5A15012: Ce°' K2SiF6:t4n' Page 71 [00216] Phosphor oompositions should basically conform with Stoichiometry, and respective elements may be substituted with different elements of respective groups of the periodic table. For example, strontium (Er) may be substituted with barium (Ba), calcium (Ca) , magnesium (Mg) or the like, of alkali earths, and yttrium (Y) may be substituted with terbium (Tb), Lutetium (Lu), scandium (So), gadolinium (Gd), or the like. Also, europium (Eu), an activator, may be substituted with cerium (Ce), terbium (Tb), praseodymium (Pr), erbium (Er), ytterbium (Yb), or the like, according to a desired energy level, and an activator may be applied alone or a co-activator, or the like, may be additionally applied to change characteristics.

[00217] Also, in implementing white light, the LED does not necessarily emit visible light. For example, the LED may generate CV light and at least one of blue, red, green, and yellow phosphors may be combined therewith to implement white light.

[00218] <Second embodiment of white implementation: LED chip combination> [00219] Also, when a illuminating apparatus includes a plurality of LEDs, the plurality of LEDs may emit light having different wavelengths. For example, white light may be implemented by combining a red LED, a green LED, and a blue LED, for example.

Page 72 [00220] White light generated by applying yellow, green, red phosphors to a blue LED chip and combining at least one of green and red LED chips thereto may have two or more peak wavelengths and may be positioned in a segment linking (x,y) coordinates (0.4476, 0.4074), (0.3484, 0.3516), (0.3101, 0.3162), (0.3128, 0.3292), (0.3333, 0.3333) of a OlE 1931 chromatioity diagram. Alternatively, white light may be positioned in a region surrounded by a speotrum of black body radiation and the segment. A color temperature of white light corresponds to a range from about 2000K to about 20000K. FIG. 24 illustrates the Planckian spectrum.

[00221] In this case, the light source device may control a color rendering index (CR1) adjusted to range from a sodium-vapor lamp to a sunlight level 100 by adjusting a mixture of phosphors and LEDs, and control a color temperature ranging from candlelight (1500K) to a blue sky (12000K) level to generate various white light.

[00222] If necessary, the light source device may generate visible light having purple, blue, green, red, orange colors, or infrared light to control an illumination color according to a surrounding atmosphere or mood. Also, Ohe iighL source device may be applied Lo generaLe iighb having a special wavelength stimulating plant growth.

[00223] <Third embodiment of white light implementation: Quantum dot> [00224] Also, materials such as quantum dots, or the Page 73 like, may be applied as materials that replace phosphors, and phosphors and quantum dots may be used in combination or alone in an LED.

[00225] A quantum dot may have a structure including a core (3 to 10 nm) such as OdSe, InP, or the like, a shell (0.5 to 2 nm) such as ZnS, ZnSe, or the like, and a ligand for stabilizing the core and the shell, and may implement various colors according to sizes. FIG. 25 is a view illustrating a structure of a quantum dot (QD) as described above.

[00226] Phosphors or quantum dots may be applied by using at least one of a method of spraying them on an LED chip or a light emitting module, a method of covering as a film, and a method of attaching as a sheet of ceramic phosphor, or the like.

[00227] As the spraying method, dispensing, spray coating, or the like, is generally used, and dispensing includes a pneumatic method and a mechanical method such as screw, linear type, or the like. Through a jetting method, an amount of dotting may be controlled through a very small amount of discharging and color coordinates may be controlled therethrough. In case of a method of collectively applying phosphors on a wafer level or in a light source unit in which an LED is mounted, productivity can be enhanced and a thickness can be easily controlled.

[00228] The method of directly covering a light Page 74 emitting module or an LED chip with a film of phosphors or quantum dots may include electrophoresis, screen printing, or a phosphor molding method, and these method may have a difference according to whether a lateral surface of an LED is required to be coated or not.

[00229] Meanwhile, in order to control efficiency of a long wavelength light emitting phosphor re-absorbing light emitted in a short wavelength, among two types of phosphors having different light emitting wavelengths, two types of phosphor layers having different light emitting wavelengths may be provided, and in order to minimize re-absorption and interference of chips and two or more wavelengths, a DEE (ODE) layer may be included between respective layers.

[00230] In order to form a uniform coated film, after a phosphor is fabricated as a film or a ceramic form and attached to an LED.

[00231] In order to differentiate light efficiency and light distribution characteristics, a light conversion material may be positioned in a remote form, and in this case, the light conversion material may be positioned together with a material such as a light-transmissive polymer, glass, or Lhe like, according Lo dorabiliby and heat resistance.

[00232] A phosphor applying technique plays a very important role in determining light characteristics in a illuminating apparatus, so techniques of controlling a Page 75 thickness of a phosphor application layer, a uniform phosphor distribution, and the like, have been variously researched. Quantum dots may also be positioned in an LED in the same manner as that of phosphors, and may be positioned in glass or light-transmissive polymer material to perform optical conversion.

[00233] Meanwhile, in order to protect an LED from an external environment or in order to improve light extraction efficiency of light emitted to the outside of an LED, a light-transmissive material may be positioned as a filler on the LED.

[00234] In this case, a transparent organic solvent such as epoxy, silicone, a hybrid of epoxy and silicone, or the like, is applied as a light-transmissive material, and the light-transmissive material may be cured according to heating, light irradiation, a time-lapse method, or the like.

[00235] In case of silicone, polydimethyl siloxane is classified as a methyl-based silicone and polymethylphenyl siloxane is classified as a phenyl-based silicone. The methyl-based silicone and the pheriyl-based silicone have differences in refracbive indexes, waber vapor Lransmission rates, light transmittance amounts, light fastness gualities, and thermostability. Also, the methyl-based silicone and the phenyl-based silicone have differences in curing speeds according to a cross linker and a catalyst, Page 76 affecting phosphor distribution.

[00236] Light extraction efficiency varies according to a refractive index of a filler, and in order to minimize a gap between a refractive index of the outermost medium from which blue light is emitted and a refractive index of the outside (air), two or more types of silicone having different refractive indices may be seguentially laminated.

[00237] In general, the methyl-based silicone has the highest level of thermostability, and variations in a temperature increase are reduced in order of phenyl-based silicone, hybrid silicone, and epoxy silicone. Silicone may be classified as a gel type silicone, an elastomer type silicone, and a resin type silicone according to the degree of hardness thereof.

[00238] Also, the LED may further include a lens for radially guiding light irradiated from a light source. In this case, a method of attaching a previously formed lens to the LED, a method of injecting an organic solvent having fluidity to the LED or to a mold and solidifying the same, and the like, may be used.

[00239] The lens attachment method includes directly aLbaching a lens bo a filler in an opper porbion of Lhe LED, bonding only an outer portion of the LED and only an cuter portion of the lens, spaced apart from the filler, and the like. As the method of injecting into a mold, injection molding, transfer molding, compression molding, or the like, Page 77 may be used.

[00240] Light transmission characteristics may be changed according to shapes of lenses (concave, convex, uneven, conical, and geometrical structures), and lenses may be deformed according to efficiency and light distribution characteristics.

[00241] Hereinafter, a lighting system implemented by applying a illuminating apparatus according to the present embodiment will be described with reference to FIGS. 26 through 33.

[00242] <First application example of illuminating apparatus 700 to lighting system> [00243] A lighting system according to the present embodiment illustrated in FTGS. 26 through 29 may automatically regulate a color temperature according to a surrounding environment (e.g., temperature and humidity) and provide a illuminating apparatus as sensitivity lighting meeting human sensitivity, rather than serving as simple lighting.

[00244] FIG. 26 is a block diagram schematically illustrating a lighting system 7000 according to an embodiment of the present inventive concept.

[00245] Referring to FIG. 26, the lighting system 7000 according to an embodiment of the present inventive concept includes an external power source 10, a ballast stabilizer Page 78 connected to the external power source 10, and a illuminating apparatus 700 driven upon receiving power applied from the ballast stabilizer 20.

[00246] The illuminating apparatus 700 includes a light source unit 740 and a light source driving device 100.

Here, the light source driving device 100 may be connected to the ballast stabilizer 20 tc apply light source driving power to the light source unit 740.

[00247] Pccording tc the present embodiment, the illuminating apparatus 700 may further include a sensing unit 790 and a controller 780. The sensing unit 790 may be installed in an indoor or outdoor area, and may have a temperature sensor 791 and a humidity sensor 792 to measure at least one air condition among an ambient temperature and humidity. The sensing unit 790 delivers the measured air condition, e.g., a temperature and humidity, to the controller 780 electrically connected thereto.

[00248] Upon receiving a signal from the sensing unit 790, the controller 780 may control an operation of the light source unit 740. For example, the controller 780 compares the measured air temperature and humidity with air conditions (temperature and humidity ranges) previously set by a user, and determines a color temperature of the light source unit 740 corresponding to the air condition. To this end, the controller 780 may be electrically connected Page 79 to the light source driving device 100, and control power (e.g., an amount of current) applied from the light source driving device 100 tc the light source unit 740 such that the light source unit 740 may be driven at the determined color temperature.

[00249] Ps described above, the light source unit 740 may operate by power supplied from the light source driving device 100. Here, as illustrated in FIG. 27, the light source unit 740 may include first and second light source groups 740-i and 740-2 including an aggregation of tEDs having different color temperatures. Here, the first and second light source groups 740-1 and 740-2 may be designed to emit the same white light as a whole.

[00250] For example, the first light source group 740-1 may emit white light having a first color temperature, and the second light source group 740-2 may emit white light having a second color temperature, and here, the first color temperature may be lower than the second color temperature. Conversely, the first color temperature may be higher than the second color temperature.

[00251] Here, white color having a relatively low temperature corresponds to a warm white color, and white color having a relatively high color temperature corresponds to a cold white color. When power is supplied to the first and second light source groups 740-1 and 740-2, Page 80 the first and second light source groups 740-1 and 740-2 emit white light having first and second color temperatures, respectively, and the respective white light may be mixed to implement white light having a color temperature determined by the controller 780.

[00252] In detail, in a case in which the first color temperature is lower than the second color temperature, if the color temperature determined by the controller 780 is relatively high, an amount of light from the first light source group 740-1 may be reduced and an amount of light from the second light source group 740-2 may be increased to implement mixed white light having the determined color temperature. Conversely, when the determined color temperature is relatively low, an amount of light from the first light source group 740-1 may be increased and an amount of light from the second light source group 740-2 may be reduced to implement white light having the determined color temperature. Here, the amount of light from each of the light source groups 740-1 and 740-2 may be implemented by differently regulating an amount of current applied from the light source driving device 100 or may be implemented by regulating the number of lighted LEDs.

[00253] FIG. 28 is a flow chart illustrating a method for controlling the lighting system 7000 illustrated in FIG. 26. Referring to FIG. 28, first, the user sets a color Page 811 temperature according to temperature and humidity ranges through the controller 780 (SlO) . The set temperature and humidity data are stored in the controller 780.

[00254] In general, when a color temperature is equal to or more than 6000K, a color providing a cool feeling, such as blue, may be produced, and when a color temperature is less than 4000K, a color providing a warm feeling, such as red, may be produced. Thus, in the present embodiment, when temperature and humidity exceed 20°C and 60%, respectively, the user may set the light source unit 740 to be turned on to have a color temperature higher than 6000K through the controller 780, when a temperature and humidity range from 10°C to 20°C and 40% to 60%, respectively, the user may set the light source unit 740 to be turned on to have a color temperature ranging from 4000K to 6000K through the controller 780, and when a temperature and humidity are lower than 10°C and 40%, respectively, the user may set the light source unit 740 to be turned on to have a color temperature lower than 4000K through the controller 780.

[00255] Next, the sensing unit 790 measures at least one of oonditions among ambient temperature and humidity (520) . The temperature and humidity measured by the sensing unit 790 are delivered to the controller 780.

[00256] subsequently, the controller 780 compares the Page 82 measurement values delivered from the sensing unit 790 with pre-set values, respeotively (530) Here, the measurement vaLues are temperature and humidity data measured by the sensing unit 790, and the pre-set values are temperature and humidity data which have been set by the user and stored in the controller 780 in advance. Namely, the controller 780 compares the measured temperature and humidity with the pre-set temperature and humidity.

[00257] coording to the comparison results, the controller 780 determines whether the measurement values satisfy the pre-set ranges (540) When the measurement values satisfy the pre-set values, the controller 780 maintains a current color temperature, and measures again a temperature and humidity (S20) Meanwhile, when the measurement values do not satisfy the pre-set values, the controller 780 detects pre-set values corresponding to the measurement values, and determines a corresponding color temperature (S50) The controller 780 controls power applied from the light source driving device 100 to the light source unit 740 such that the light source unit 740 can be driven at the determined color temperature. To this end, the controller 780 may include known power controllers such as a switch, a resistor, a DC/DC converter, ard the like, provided between the light source driving device 100 and the light source unit 740.

Page 83 [00258] Then, the light source unit 740 may be driven to have the determined color temperature (560) . Accordingly, the light source unit 740 may have the color temperature adjusted to correspond to the temperature and humidity previously set by the user according to ambient temperature and humidity.

[00259] In this manner, the lighting system 7000 is able to automatically regulate a color temperature of the indoor lighting according to changes in ambient temperature and humidity, thereby satisfying human moods varied according to changes in the surrounding natural environment and providing psychological stability.

[00260] FIG. 29 schematically illustrates an implementation example cf the lighting system 7000 illustrated in FIG. 26. As illustrated in FIG. 29, the illuminating apparatus 700 may be installed cn the ceiling as an indoor lighting fitting. Here, the sensing unit 790 may be disposed in a position appropriate to measure ambient temperature and humidity.

[00261] In the present embodiment, the sensing unit 790 is described to sense a temperature and humidity to control a color temperature, but the present inventive concept is not limited thereto. For example, the sensing unit 790 may include a motion sensor and an illumination sensor for sensing a user's motion and intensity of illumination.

Page 84 Here, the lighting system may be set to perform a control operation of turning off the light source unit If a user's motion is not sensed for a pre-set period of time. Also, the lighting system 7000 may compare a value sensed by the illumination sensor with a pre-set illumination value and perform a control operation to output desired intensity of illumination.

[00262] Another example of the lighting system that can be controlled as described will be described in detail with reference to FIGS. 30 through 33.

[00263] <Second application example of illuminating apparatus to lighting system> [00264] FIG. 30 is a block diagram schematically illustrating a lighting system 8000 according to an embodiment of the present inventive concept, and FIG. 31 is a flow chart illustrating a method for controlling the lighting system 8000 illustrated in FIG. 30.

[00265] First, referring to FIG. 30, the lighting system 8000 according to the present embodiment includes the external power source 10, the ballast stabilizer 20 connected to the external power source 10, and the illuminating apparatus 700 driven upon receiving power from the ballast stabilizer 20.

[00266] The illuminating apparatus 700 includes the light source unit 740 and the light source driving device Page 85 100. Here, the light source driving device 100 may be connected to the ballast stabilizer 20 such that it oan apply light source driving power to the light source unit 740.

[00267] ccording to the present embodiment, the illuminating apparatus 700 may further include the sensing unit 790 and the controller 780. Here, the sensing unit 790 may include the motion sensor 793 and/or the illumination sensor 794.

[00268] Hereinafter, a method for controlling the lighting system 8000 will be described with reference to FIG. 31.

[00269] First, the motion sensor 793 senses a user's motion or a movement of the illuminating apparatus and outputs an operation signal (SilO) . The operation signal may be a signal for activating overall power. Namely, when a motion of the user or the illuminating apparatus is sensed, the motion sensor 793 outputs an operation signal to the controller 780.

[00270] Next, based on the operation signal, an intensity of illumination of a surrounding environment is measured and an illumination intensity value is output (5120) -rahen the operation signal is applied to the controller 780, the controller 780 outputs a signal to the illumination sensor 794, and the illumination sensor 794 Page 86 then measures an intensity of illumination of the surrounding environment. The illumination sensor 794 outputs the measured illumination intensity value of the surrounding environment to the controller 780. Thereafter, whether to turn on the illuminating apparatus is determined acoording to the illumination intensity value and the illuminating apparatus emits light according to the determination.

[00271] First, the illumination intensity value is compared with a pre-set value for a determination(S130) When the illumination intensity value is input to the controller 780, the controller 780 compares the received illumination intensity value with a stored pre-set value and determines whether the former is lower than the latter.

Here, the pre-set value is a value for determining whether to turn on the illuminating apparatus. For example, the pre-set value may be an illumination intensity value at which a user may have difficulty in recognizing an object with the naked eye or may make a mistake in a certain situation, for example, a situation in which the sun starts to set.

[00272] When the illumination intensity value measured by the illumination sensor 794 is higher than the pre-set value, lightinq is not required, so the controller 780 shuts down the overall system.

Page 87 [00273] Meanwhile, when the illumination intensity value measured by the illumination sensor 794 is lower than the pre-set value, lighting is required, so the controller 780 outputs a signal to the light source unit 740 and the light source unit 740 emits light (3140) [00274] FIG. 32 is a flow chart illustrating a method for controlling the lighting system 8000 according to another embodiment of the present inventive concept.

Hereinafter, a method for controlling the lighting system 8000 according to another embodiment of the present inventive concept will be described. However, the same procedure as that of the method for controlling a lighting system as described above with reference to FIG. 31 will be omitted.

[00275] As illustrated in FIG. 32, in the case of the method for controlling the lighting system 8000 according to the present embodiment, an intensity of light emissions of the lighting may be regulated according to an illumination intensity value of a surrounding environment.

[00276] As described above, the illumination sensor 794 outputs an illumination intensity value to the controller 780 (3220) . When the illumination intensity value is lower than a pre-set value (3230), the controller 780 determines a range of the illumination intensity value (3240-1) . The controller 780 has a range of subdivided illumination Page 88 intensity value, based on which the controller 780 determines the range of the measured illumination intensity value.

[00277] Next, when the range of the illumination intensity value is determined, the controller 780 determines an intensity of light emissions of the light source unit (5240-2), and acccrdingly, the light source unit 740 emits light (5240-3) . The intensity of light emissions may be divided according to the illumination intensity value, and here, the illuminaticn intensity value varies according tc weather, time, and surrounding environment, so the intensity of lighting may also be regulated. By regulating the intensity of light emissions according to the range of the illumination intensity value, power wastage can be prevented and a user attention may be drawn to their surroundings.

[00278] FIG. 33 is a flow chart illustrating a method for controlling the lighting system 8000 according to another embodiment of the present inventive concept.

Hereinafter, a method for controlling the lighting system 8000 according to another embodiment of the present inventive concept will be described. However, the same procedure as that of the method for controlling a lighting system as described above with reference to FIGS. 31 and 32 will be omitted.

Page 89 [00279] The method for oontrolling the lighting system 8000 according to the present embodiment further includes operation S350 of determining whether a motion of a user or the illuminating apparatus is maintained when the light source unit 740 emits light, and determining whether to maintain light emissions.

[00280] First, when the light source unit 740 starts to emit light, termination of the light emissions may be determined based on whether the user moves. Here, when a user's motion is not sensed for more than a pre-set period of time, user motion may be determined that the user is sleeping, is away, or the like, and thus, the lighting function is not necessary.

[00281] Whether to maintain light emissions is determined by the motion sensor 793 according to whether a motion of the user or the illuminating apparatus is sensed.

When user's motion is continuously sensed by the motion sensor 793, intensity of illumination is measured again and whether to maintain light emissions is determined.

Meanwhile, when a motion is not sensed, the system is terminated [00282] According to the lighting system according to the present embodiment, although the user does not perform an ON/OFF operation, whether to turn on the light source unit can be controlled by exchanging interactive Page 90 information with the user.

[00283] According to an embodiment, the communications module may be modularized integrally with the sensing unit.

Referring back to FIG. 30, the lighting system 8000 according to the present embodiment includes a communications module 795. The communications module 795 may receive a radio signal provided with respect to driving of the illuminating apparatus. Here, the controller 780 may control an operation of the light source unit 740 upon receiving a signal from the communications module 795.

[00284] The communications module 795 may be integrally modularized with the sensing unit 790, but the present inventive concept is not limited thereto and the communications module 795 may be implemented separately apart from the sensing unit 790.

[00285] The communications module 795 may be, for example, a Zigbee module. For household wireless communications, a signal from the illuminating apparatus 700 may be transmitted to household devices such as a garage door opening and closing device, a door lock, a home appliance, a cellular phone, a IV, a router, a general illumination switch, and the like, through a gateway hub, whereby the household devices can be controlled. Also, the illuminating apparatus 700 may be controlled by signals from the household devices. Thus, the household devices Page 91 may also Include a communications module for wireless communications suoh as ZigBee and/or Wi-Fl. According to an embodiment, communications may be performed directly with the household devices without the gateway hub.

[00286] Also, the Illuminating apparatus 700 may detect a type of a channel or a program of the TV on the air (currently being aired or broadcast) or detect brightness of the screen of the TV, and brightness of the illuminating apparatus 700 may be automatically controlled accordingly.

For example, when a TV show, or the like, is broadoast and a dim atmosphere is reguired, a color sense of illumination of the illuminating apparatus 700 is controlled such that a color temperature is lowered to below 12000K according to the atmosphere. Reversely, in case of a light atmosphere such as a light entertainment TV program, a color temperature of illumination of the illuminating apparatus 700 is also increased to above 12000K to provide white illumination based on blue color.

[00287] As set forth above, according to embodiments of the present inventive concept, the light source driving device, directly compatible with a ballast stabilizer by having electrical characteristics similar to those of a fluorescent lamp, can be obtained.

[00288] Also, a illuminating apparatus having the foregoing light source driving device can be obtained.

Page 92 [00289] Advantages and effects of the present inventive concept are not limited to the foregoing content and any other technical effects not mentioned herein may be easily understood by a person skilled in the art from the

foregoing description.

[00290] While the present inventive concept has been shown and described in connection with the embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.

Page 93

Claims

What Is Claimed Is: 1. An illuminating apparatus comprising: a light source driving device; and a light source unit having at least one light emitting diode (LED) receiving light source driving power from the light source driving device, wherein the light source driving device comprises: a transformer unit including a primary winding part including first and second external input terminals receiving external power from a ballast stabilizer and a coil having an impedance level set to allow the ballast stabilizer to output a normal amount of power, and a secondary winding part electromagnetically coupled to the primary winding part to transform applied external power; a rectifying diode rectifying output power from the secondary winding part of the transformer unit; a filter unit having an input terminal and an output terminal outputting light source driving power, delivering rectified power, applied from the rectifying diode to the input terminal thereof when the rectifying diode is turned on, to the output terminal thereof, and storing a partial amount of the rectified power; and an open loop preventing unit providing a closed loop to the filter unit such that power stored in the filter Page 94 unit is applied to the output terminal when the rectifying diode is turned off.
2. The illuminating apparatus of claim 1, wherein an impedance level of the coil set to allow the ballast stabilizer to output a normal amount of power is obtained by using Equation 1.[Equation 1]IT =where V-is a voltage output when the ballast stabilizer is in a state of outputting normal power, and iamt is a ourrent output when the bailast stabilizer is in a state of outputting normal power.
3. The illuminating apparatus of claim 1, wherein impedanoe of the coil ranges from about 700Q to about 800Q.
4. The illuminating apparatus of claim 1, wherein the filter unit is a low pass filter (LPF)
5. The illuminating apparatus of claim 1, wherein the open loop preventing unit inoludes a free-wheeling diode.
6. The illuminating apparatus of claim 1, wherein the Page 95 LED comprises a light emitting laminate including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively, wherein the first electrode inoludes at least one conductive via connected to the first conductivity-type semiconductor layer penetrating the second conductivity-type semiconductor layer and the active layer.
7. The illuminating apparatus of claim 1, wherein the LED comprises: a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; and first and second electrodes electrically connected to the first and second oonduotivity-type semiconductor layers, respectively, wherein at least one of the first and second electrodes may include a plurality of laminated metal layers including different elements.
8. The illuminating apparatus of claim 1, wherein the light source unit emits white light, Page 96 the white light has two or more peak wavelengths, and a oolor temperature of the white light ranges from about 2000K to about 20000K.
9. The illuminating apparatus of claim 1, further comprising: at least one of a sensing unit including at least one of a temperature sensor, a humidity sensor, a motion sensor, and an illumination sensor; a communications module wirelessly receiving a signal provided with respeot to driving of the illuminating apparatus from the outside; and a controller controlling power applied to the light source unit from the light source driving device upon receiving a signal from at least one of the sensing unit and the communications module.
10. An illuminating apparatus comprising: a socket including an input terminal receiving external power from a ballast stabilizer; a housing coupled to the socket; a plate installed within the housing and including a light source driving device; and a light source unit mounted on the plate and including at least one LED receiving light source driving Page 97 power from the light source driving device, wherein the light source driving device comprises: a transformer unit including a primary winding part including first and second external input terminals receiving external power from the socket and a coil having an impedance level set to allow the ballast stabilizer to cutput a normal amount of power, and a secondary winding part electromagnetically coupled to the primary winding part to transform the applied external power; a rectifying dicde rectifying cutput power from the secondary winding part of the transformer unit; a filter unit having an input terminal and an output terminal outputting light source driving power, delivering power, applied from the secondary winding part of the transformer unit to the input terminal thereof when the rectifying diode is turned on, to the output terminal thereof, and storing a partial amount of power; and an open loop preventing unit providing a closed loop to the filter unit such that power stored in the filter unit is applied to the output terminal when the rectifying diode is turned off.Page 98