GB2497248A - A graphene transistor with a self-aligned gaTE - Google Patents
A graphene transistor with a self-aligned gaTE Download PDFInfo
- Publication number
- GB2497248A GB2497248A GB1305445.7A GB201305445A GB2497248A GB 2497248 A GB2497248 A GB 2497248A GB 201305445 A GB201305445 A GB 201305445A GB 2497248 A GB2497248 A GB 2497248A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal portion
- self
- oxide layer
- metal oxide
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 3
- 229910021389 graphene Inorganic materials 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 6
- 229910044991 metal oxide Inorganic materials 0.000 abstract 3
- 150000004706 metal oxides Chemical class 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/876,454 US8344358B2 (en) | 2010-09-07 | 2010-09-07 | Graphene transistor with a self-aligned gate |
PCT/US2011/044619 WO2012033569A1 (en) | 2010-09-07 | 2011-07-20 | A graphene transistor with a self-aligned gate |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201305445D0 GB201305445D0 (en) | 2013-05-08 |
GB2497248A true GB2497248A (en) | 2013-06-05 |
GB2497248B GB2497248B (en) | 2014-12-31 |
Family
ID=45770020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1305445.7A Expired - Fee Related GB2497248B (en) | 2010-09-07 | 2011-07-20 | A graphene transistor with a self-aligned gate |
Country Status (4)
Country | Link |
---|---|
US (3) | US8344358B2 (en) |
GB (1) | GB2497248B (en) |
TW (1) | TWI518905B (en) |
WO (1) | WO2012033569A1 (en) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112012028292A2 (en) * | 2010-05-05 | 2016-11-01 | Univ Singapore | graphene doping method, photodetector and device |
US8476765B2 (en) * | 2010-12-06 | 2013-07-02 | Stmicroelectronics, Inc. | Copper interconnect structure having a graphene cap |
US9257509B2 (en) | 2010-12-21 | 2016-02-09 | The Trustees Of Columbia University In The City Of New York | Electrical devices with graphene on boron nitride |
US8617941B2 (en) * | 2011-01-16 | 2013-12-31 | International Business Machines Corporation | High-speed graphene transistor and method of fabrication by patternable hard mask materials |
US8431923B2 (en) * | 2011-02-07 | 2013-04-30 | Micron Technology, Inc. | Semiconductor structure and semiconductor device including a diode structure and methods of forming same |
US20120276718A1 (en) * | 2011-04-27 | 2012-11-01 | Shanghai Institute Of Microsystem And Information Technology, Chinese Academy | Method of fabricating graphene-based field effect transistor |
CN102956467B (en) * | 2011-08-19 | 2015-06-03 | 中国科学院上海微系统与信息技术研究所 | Method for preparing gate medium on surface of graphene |
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
KR101830782B1 (en) * | 2011-09-22 | 2018-04-05 | 삼성전자주식회사 | Electrode structure including graphene and feield effect transistor having the same |
US8772910B2 (en) | 2011-11-29 | 2014-07-08 | International Business Machines Corporation | Doping carbon nanotubes and graphene for improving electronic mobility |
US8895417B2 (en) * | 2011-11-29 | 2014-11-25 | International Business Machines Corporation | Reducing contact resistance for field-effect transistor devices |
US8633055B2 (en) * | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
US8901680B2 (en) * | 2012-04-12 | 2014-12-02 | International Business Machines Corporation | Graphene pressure sensors |
KR101906972B1 (en) * | 2012-04-18 | 2018-10-11 | 삼성전자주식회사 | Graphene switching devece including tunable barrier |
CN103378064B (en) * | 2012-04-28 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Metal interconnection structure and preparation method thereof |
US9472450B2 (en) | 2012-05-10 | 2016-10-18 | Samsung Electronics Co., Ltd. | Graphene cap for copper interconnect structures |
US8809153B2 (en) | 2012-05-10 | 2014-08-19 | International Business Machines Corporation | Graphene transistors with self-aligned gates |
US9117667B2 (en) * | 2012-07-11 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Carbon layer and method of manufacture |
KR101919423B1 (en) * | 2012-08-01 | 2018-11-19 | 삼성전자주식회사 | Graphene semiconductor, and electronic device comprising the same |
US8741756B2 (en) | 2012-08-13 | 2014-06-03 | International Business Machines Corporation | Contacts-first self-aligned carbon nanotube transistor with gate-all-around |
US8932919B2 (en) * | 2012-11-21 | 2015-01-13 | International Business Machines Corporation | Vertical stacking of graphene in a field-effect transistor |
CN103839821B (en) * | 2012-11-27 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | Transistor and manufacture method thereof |
KR20140067600A (en) | 2012-11-27 | 2014-06-05 | 삼성디스플레이 주식회사 | Switching element, display substrate and method of manufacturing the same |
US8796096B2 (en) | 2012-12-04 | 2014-08-05 | International Business Machines Corporation | Self-aligned double-gate graphene transistor |
US8609481B1 (en) | 2012-12-05 | 2013-12-17 | International Business Machines Corporation | Gate-all-around carbon nanotube transistor with selectively doped spacers |
TWI467767B (en) * | 2012-12-07 | 2015-01-01 | Univ Nat Taiwan | Graphene transistor |
KR101920724B1 (en) | 2012-12-11 | 2018-11-21 | 삼성전자주식회사 | Electronic device including graphene |
CN103117316B (en) * | 2013-01-30 | 2015-08-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Based on the grapheme transistor of metamaterial structure, photo-detector and application thereof |
US9099305B2 (en) * | 2013-04-30 | 2015-08-04 | Stmicroelectronics S.R.L. | Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained |
US9276077B2 (en) * | 2013-05-21 | 2016-03-01 | Globalfoundries Inc. | Contact metallurgy for self-aligned high electron mobility transistor |
US9231094B2 (en) | 2013-05-21 | 2016-01-05 | Globalfoundries Inc. | Elemental semiconductor material contact for high electron mobility transistor |
US8889475B1 (en) | 2013-05-30 | 2014-11-18 | International Business Machines Corporation | Self-aligned bottom-gated graphene devices |
KR102100415B1 (en) | 2013-07-15 | 2020-04-14 | 삼성전자주식회사 | Tunneling device and method of manufacturing the same |
US8901666B1 (en) * | 2013-07-30 | 2014-12-02 | Micron Technology, Inc. | Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures |
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US9356178B2 (en) | 2013-10-18 | 2016-05-31 | University Of Central Florida Research Foundation, Inc. | Plasmonic phototransistor |
US9490323B2 (en) | 2014-06-13 | 2016-11-08 | Samsung Electronics Co., Ltd. | Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width |
CN104166307A (en) * | 2014-08-14 | 2014-11-26 | 深圳市贝特瑞纳米科技有限公司 | Graphical method for graphene thin film, functional device and application of graphene thin film |
CN104319237B (en) * | 2014-10-11 | 2018-05-22 | 中国科学院微电子研究所 | The method that graphene top gate FET device is prepared by self-registered technology |
US9685564B2 (en) | 2015-10-16 | 2017-06-20 | Samsung Electronics Co., Ltd. | Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures |
US10276698B2 (en) | 2015-10-21 | 2019-04-30 | International Business Machines Corporation | Scalable process for the formation of self aligned, planar electrodes for devices employing one or two dimensional lattice structures |
US9698363B1 (en) * | 2015-12-30 | 2017-07-04 | International Business Machines Corporation | RF-transistors with self-aligned point contacts |
CN107230724A (en) * | 2016-03-24 | 2017-10-03 | 上海新昇半导体科技有限公司 | Graphene field effect transistor and its manufacture method |
CN107346787A (en) * | 2016-05-05 | 2017-11-14 | 上海新昇半导体科技有限公司 | Microelectronic structure and forming method thereof |
US10038060B2 (en) | 2016-05-19 | 2018-07-31 | Qualcomm Incorporated | Graphene NMOS transistor using nitrogen dioxide chemical adsorption |
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
JP6851804B2 (en) * | 2016-12-14 | 2021-03-31 | 住友電気工業株式会社 | Semiconductor device |
US10170702B2 (en) * | 2017-01-12 | 2019-01-01 | International Business Machines Corporation | Intermetallic contact for carbon nanotube FETs |
WO2018169024A1 (en) * | 2017-03-17 | 2018-09-20 | Ricoh Company, Ltd. | Field-effect transistor, method for producing same, display element, display device, and system |
US20180308696A1 (en) * | 2017-04-25 | 2018-10-25 | Texas Instruments Incorporated | Low contact resistance graphene device integration |
US10164018B1 (en) * | 2017-05-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor interconnect structure having graphene-capped metal interconnects |
CN107290389B (en) * | 2017-06-12 | 2020-02-07 | 苏州慧闻纳米科技有限公司 | Gas-sensitive material for detecting low-concentration formaldehyde at room temperature, preparation method thereof and gas-sensitive sensor |
US10580924B2 (en) * | 2018-04-04 | 2020-03-03 | The Florida International University Board Of Trustees | Graphene devices for terahertz detection and emission |
US11982918B2 (en) | 2018-04-25 | 2024-05-14 | Wuxi Clearink Limited | Apparatus and method for reflective image display with dielectric layer |
US10325982B1 (en) | 2018-05-17 | 2019-06-18 | Northrop Grumman Systems Corporation | Drain ledge for self-aligned gate and independent channel region and drain-side ridges for SLCFET |
WO2021028158A1 (en) | 2019-08-15 | 2021-02-18 | Amo Gmbh | Wireless sensor for photons and/or foreign substances having a graphene fet |
WO2021028157A1 (en) | 2019-08-15 | 2021-02-18 | Amo Gmbh | Sensor for detecting photons incident on the surface thereof and/or foreign substances accumulating on the surface thereof |
US11545558B2 (en) * | 2020-09-28 | 2023-01-03 | Paragraf Limited | Method of manufacturing a transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100012912A1 (en) * | 2008-07-15 | 2010-01-21 | Sandisk 3D Llc | Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
US20100051897A1 (en) * | 2008-08-29 | 2010-03-04 | Advanced Micro Devices, Inc. | Device and process of forming device with device structure formed in trench and graphene layer formed thereover |
US20100086875A1 (en) * | 2008-10-06 | 2010-04-08 | Sandisk 3D Llc | Method of making sub-resolution pillar structures using undercutting technique |
US20100127271A1 (en) * | 2008-11-26 | 2010-05-27 | Palo Alto Research Center Incorporated | Electronic circuit structure and method for forming same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170120B2 (en) | 2005-03-31 | 2007-01-30 | Intel Corporation | Carbon nanotube energy well (CNEW) field effect transistor |
US7492015B2 (en) | 2005-11-10 | 2009-02-17 | International Business Machines Corporation | Complementary carbon nanotube triple gate technology |
WO2008023399A1 (en) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | n-TYPE SEMICONDUCTOR CARBON NANOTUBES, PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICES |
US20080128760A1 (en) * | 2006-12-04 | 2008-06-05 | Electronics And Telecommunications Research Institute | Schottky barrier nanowire field effect transistor and method for fabricating the same |
US20080293228A1 (en) | 2007-05-25 | 2008-11-27 | Kalburge Amol M | CMOS Compatible Method of Forming Source/Drain Contacts for Self-Aligned Nanotube Devices |
US7858454B2 (en) * | 2007-07-31 | 2010-12-28 | Rf Nano Corporation | Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same |
US20090174435A1 (en) | 2007-10-01 | 2009-07-09 | University Of Virginia | Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits |
WO2009129194A2 (en) | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
US8106383B2 (en) * | 2009-11-13 | 2012-01-31 | International Business Machines Corporation | Self-aligned graphene transistor |
-
2010
- 2010-09-07 US US12/876,454 patent/US8344358B2/en active Active
-
2011
- 2011-07-01 TW TW100123364A patent/TWI518905B/en not_active IP Right Cessation
- 2011-07-20 WO PCT/US2011/044619 patent/WO2012033569A1/en active Application Filing
- 2011-07-20 GB GB1305445.7A patent/GB2497248B/en not_active Expired - Fee Related
-
2012
- 2012-09-01 US US13/602,117 patent/US8753965B2/en active Active
- 2012-09-13 US US13/614,530 patent/US8680512B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100012912A1 (en) * | 2008-07-15 | 2010-01-21 | Sandisk 3D Llc | Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
US20100051897A1 (en) * | 2008-08-29 | 2010-03-04 | Advanced Micro Devices, Inc. | Device and process of forming device with device structure formed in trench and graphene layer formed thereover |
US20100086875A1 (en) * | 2008-10-06 | 2010-04-08 | Sandisk 3D Llc | Method of making sub-resolution pillar structures using undercutting technique |
US20100127271A1 (en) * | 2008-11-26 | 2010-05-27 | Palo Alto Research Center Incorporated | Electronic circuit structure and method for forming same |
Also Published As
Publication number | Publication date |
---|---|
TW201212235A (en) | 2012-03-16 |
GB2497248B (en) | 2014-12-31 |
US20120056161A1 (en) | 2012-03-08 |
TWI518905B (en) | 2016-01-21 |
US8753965B2 (en) | 2014-06-17 |
WO2012033569A1 (en) | 2012-03-15 |
US8680512B2 (en) | 2014-03-25 |
US20120329260A1 (en) | 2012-12-27 |
US8344358B2 (en) | 2013-01-01 |
US20130009133A1 (en) | 2013-01-10 |
GB201305445D0 (en) | 2013-05-08 |
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