GB2490850A - Electro-optic device - Google Patents

Electro-optic device Download PDF

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Publication number
GB2490850A
GB2490850A GB1216236.8A GB201216236A GB2490850A GB 2490850 A GB2490850 A GB 2490850A GB 201216236 A GB201216236 A GB 201216236A GB 2490850 A GB2490850 A GB 2490850A
Authority
GB
United Kingdom
Prior art keywords
rib
light
layer
carrying material
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB1216236.8A
Other versions
GB2490850B (en
GB201216236D0 (en
Inventor
David Thompson
Frederic Gardes
Graham Reed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Surrey
Original Assignee
University of Surrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Surrey filed Critical University of Surrey
Publication of GB201216236D0 publication Critical patent/GB201216236D0/en
Publication of GB2490850A publication Critical patent/GB2490850A/en
Application granted granted Critical
Publication of GB2490850B publication Critical patent/GB2490850B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials

Abstract

An electro - optic device (110), comprising a layer of light - carrying material; and a rib (121), projecting from the layer of light - carrying material, for guiding optical signals propagating through the device (110). The layer of light - carrying material comprises a first doped region (118) of a first type extending into the rib, and a second doped region (121) of a second, different type extending into the rib such that a pn junction is formed within the rib (121). The pn junction extends substantially parallel to at least two contiguous faces of the rib (121), resulting in a more efficient device. In addition, a self-aligned fabrication process can be used in order to simplify the fabrication process and increase reliability and yield.
GB1216236.8A 2010-02-17 2011-02-17 Electro-optic device Active GB2490850B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1002726A GB2477935A (en) 2010-02-17 2010-02-17 Electro-optic device with a waveguide rib
PCT/GB2011/000216 WO2011101632A1 (en) 2010-02-17 2011-02-17 Electro-optic device

Publications (3)

Publication Number Publication Date
GB201216236D0 GB201216236D0 (en) 2012-10-24
GB2490850A true GB2490850A (en) 2012-11-14
GB2490850B GB2490850B (en) 2017-09-06

Family

ID=42113980

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1002726A Withdrawn GB2477935A (en) 2010-02-17 2010-02-17 Electro-optic device with a waveguide rib
GB1216236.8A Active GB2490850B (en) 2010-02-17 2011-02-17 Electro-optic device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1002726A Withdrawn GB2477935A (en) 2010-02-17 2010-02-17 Electro-optic device with a waveguide rib

Country Status (3)

Country Link
US (1) US9343638B2 (en)
GB (2) GB2477935A (en)
WO (1) WO2011101632A1 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101758141B1 (en) * 2010-09-17 2017-07-14 삼성전자주식회사 Optoelectronic device having vertical slabs
US9329415B2 (en) * 2012-11-05 2016-05-03 Agency For Science, Technology And Research Method for forming an optical modulator
US9541775B2 (en) * 2013-03-19 2017-01-10 Luxtera, Inc. Method and system for a low-voltage integrated silicon high-speed modulator
US10048518B2 (en) * 2013-03-19 2018-08-14 Luxtera, Inc. Method and system for a low-voltage integrated silicon high-speed modulator
MY180642A (en) 2013-05-14 2020-12-04 Coriant Advanced Tech Llc Ultra-responsive phase shifters for depletion mode silicon modulators
FR3009893B1 (en) * 2013-08-26 2016-12-30 Commissariat Energie Atomique METHOD FOR MANUFACTURING AN AREA PIN CORRUGATED AND SPACED DOPED ZONES, APPLICATION TO THE MANUFACTURE OF ELECTRO-OPTICAL SILICON MODULATORS AND GERMANIUM PHOTO-DETECTORS
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
GB2543122B (en) 2015-11-12 2018-07-18 Rockley Photonics Ltd An optoelectronic component
JP6295115B2 (en) * 2014-03-19 2018-03-14 富士通株式会社 Optical semiconductor device and manufacturing method thereof
GB2525427A (en) * 2014-04-24 2015-10-28 Ibm Waveguide structure
US9323079B1 (en) * 2015-01-26 2016-04-26 Laxense Inc. Optical device having electro-optic silicon modulator on large core fin waveguide and method to make the same
US10216059B2 (en) * 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
CN107533248A (en) 2015-03-05 2018-01-02 洛克利光子有限公司 waveguide modulator structure
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
US11054674B2 (en) * 2018-10-24 2021-07-06 Rockley Photonics Limited PN-junction phase modulator in a large silicon waveguide platform
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US20160313577A1 (en) * 2015-04-23 2016-10-27 Laxense Inc. Dual-junction optical modulator and the method to make the same
US10514503B2 (en) * 2016-03-04 2019-12-24 The Governing Council Of The University Of Toronto System and method for manufacturing a semiconductor junction
JP6457440B2 (en) * 2016-07-06 2019-01-23 株式会社フジクラ Optical modulator and method for manufacturing optical modulator
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
WO2018100157A1 (en) 2016-12-02 2018-06-07 Rockley Photonics Limited Waveguide optoelectronic device
GB2559458B (en) * 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide device and method of doping a waveguide device
CN106547122B (en) * 2017-01-25 2019-03-22 中国科学院半导体研究所 A kind of reversed PN type doped structure and preparation method
JP7037287B2 (en) * 2017-06-01 2022-03-16 株式会社フジクラ Optical waveguide element
GB2576652B (en) 2017-07-05 2021-12-22 Rockley Photonics Ltd Optoelectronic device
WO2020214184A1 (en) * 2019-04-19 2020-10-22 Source Photonics, Inc. Multi-layer p-n junction based phase shifter and methods of manufacturing and using the same
ES2913576B2 (en) 2020-12-02 2022-10-11 Univ Malaga SINGLE BEAM SIDE DEFLECTOR, MULTIPLEXER/DEMULTIPLEXER, AND OPTICAL ANTENNA FEED DEVICE INCORPORATING THE DEFLECTOR, AND METHODS USING THEM

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US20100060970A1 (en) * 2008-09-06 2010-03-11 Sifotonics Technologies (Usa) Inc. Electro-optic silicon modulator
WO2010151224A1 (en) * 2009-06-22 2010-12-29 Agency For Science, Technology And Research Thin-film solar cell interconnection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01191472A (en) * 1988-01-26 1989-08-01 Fujitsu Ltd Electrostatic breakdown preventive element
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
GB2323450A (en) * 1997-03-20 1998-09-23 Secr Defence Optical modulator
GB2348293A (en) * 1999-03-25 2000-09-27 Bookham Technology Ltd Optical phase modulator
GB2373921A (en) * 2001-03-27 2002-10-02 Bookham Technology Plc Fabrication of integrated modulated waveguide structures by self-alignment process
US6999670B1 (en) * 2002-08-27 2006-02-14 Luxtera, Inc. Active waveguides for optoelectronic devices
US7116853B2 (en) * 2003-08-15 2006-10-03 Luxtera, Inc. PN diode optical modulators fabricated in rib waveguides
EP1743376B1 (en) * 2004-02-26 2015-09-02 Cisco Technology, Inc. Active manipulation of light in a silicon-on-insulator (soi) structure
US7672553B2 (en) * 2007-03-01 2010-03-02 Alcatel-Lucent Usa Inc. High speed semiconductor optical modulator
US7747122B2 (en) * 2008-09-30 2010-06-29 Intel Corporation Method and apparatus for high speed silicon optical modulation using PN diode
FR2937427B1 (en) * 2008-10-17 2011-03-04 Commissariat Energie Atomique METHOD FOR MANUFACTURING A SELF-ALIGNED SELF-ALIGNED SELF-ALIGNED SILICON ELECTRO-OPTICAL MODULATOR
US8014636B2 (en) * 2009-02-20 2011-09-06 Oracle America Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices
US8936962B2 (en) * 2009-03-13 2015-01-20 Nec Corporation Optical modulator and method for manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US20100060970A1 (en) * 2008-09-06 2010-03-11 Sifotonics Technologies (Usa) Inc. Electro-optic silicon modulator
WO2010151224A1 (en) * 2009-06-22 2010-12-29 Agency For Science, Technology And Research Thin-film solar cell interconnection

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GARDES F Y ET AL: 'Evolution of optical modulation usuing majority carrier plasma dispersion effects in S01' SILICON PHOTONICS III 21 JAN. 2008 SAN JOSE, CA, USA vol.6898, 21 January 2008 (2008-01-21), pages 68980C-168980C-10, XP002641838, *
MAINE S ET AL: 'Design Optimization of a Sige/Si Quantum-Well Optical Modulator' *
TSUNG-YANG LIOW ET AL: 'Silicon Modulators and germanium Photodetectors on S01: Monolithic Intergration, Compatibility and Performance Optimization' *

Also Published As

Publication number Publication date
GB2490850B (en) 2017-09-06
GB201002726D0 (en) 2010-04-07
GB201216236D0 (en) 2012-10-24
WO2011101632A1 (en) 2011-08-25
GB2477935A (en) 2011-08-24
US20130188902A1 (en) 2013-07-25
US9343638B2 (en) 2016-05-17

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20190808 AND 20190814

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20200116 AND 20200122