GB2489397B - A method of making a semiconductor wafer - Google Patents

A method of making a semiconductor wafer

Info

Publication number
GB2489397B
GB2489397B GB1103720.7A GB201103720A GB2489397B GB 2489397 B GB2489397 B GB 2489397B GB 201103720 A GB201103720 A GB 201103720A GB 2489397 B GB2489397 B GB 2489397B
Authority
GB
United Kingdom
Prior art keywords
trench
wafer
substrate
making
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1103720.7A
Other versions
GB2489397A8 (en
GB2489397A (en
GB201103720D0 (en
Inventor
Owen J Guy
Yufei Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swansea University
Original Assignee
Swansea University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swansea University filed Critical Swansea University
Priority to GB1103720.7A priority Critical patent/GB2489397B/en
Publication of GB201103720D0 publication Critical patent/GB201103720D0/en
Publication of GB2489397A publication Critical patent/GB2489397A/en
Publication of GB2489397A8 publication Critical patent/GB2489397A8/en
Application granted granted Critical
Publication of GB2489397B publication Critical patent/GB2489397B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • H10P52/00—
    • H10P90/12—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

In a method of making a semiconductor wafer, the method comprises forming a trench or groove (26, fig. 7) in a single crystal wafer substrate (10); anisotropically etching in the trench (26) to form an elongate notch 28, 30 and using the notch 28, 30 as an initiation site to cleave the substrate '10 along a crystal plane to separate a slim wafer 12. The anisotropic etch can be potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH). The trench can be formed by either saw or laser cutting. The plane of cleavage of the wafer runs parallel to the substrate surface, i.e. the surface which received the trench. This method produces thin wafers whose thicknesses can be less than 60 micron.
GB1103720.7A 2011-03-04 2011-03-04 A method of making a semiconductor wafer Expired - Fee Related GB2489397B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1103720.7A GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1103720.7A GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Publications (4)

Publication Number Publication Date
GB201103720D0 GB201103720D0 (en) 2011-04-20
GB2489397A GB2489397A (en) 2012-10-03
GB2489397A8 GB2489397A8 (en) 2013-03-06
GB2489397B true GB2489397B (en) 2013-08-14

Family

ID=43923213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1103720.7A Expired - Fee Related GB2489397B (en) 2011-03-04 2011-03-04 A method of making a semiconductor wafer

Country Status (1)

Country Link
GB (1) GB2489397B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3035120A1 (en) * 1980-09-17 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Division of semiconductor rod into wafers - by forming notches or grooves and splitting off wafers with focussed laser light
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
EP1091394A2 (en) * 1999-10-04 2001-04-11 Tokyo Seimitsu Co.,Ltd. Method for manufacturing thin semiconductor chips
WO2003044841A2 (en) * 2001-11-19 2003-05-30 Denselight Semiconductors Pte Ltd. Method of dicing a complex topologically structured wafer
US20040055634A1 (en) * 2002-05-08 2004-03-25 Kabushiki Kaisha Y.Y.L. Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
JP2006245498A (en) * 2005-03-07 2006-09-14 Sharp Corp Substrate manufacturing method and apparatus
WO2007087354A2 (en) * 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
US20080061303A1 (en) * 2006-09-06 2008-03-13 Kabushiki Kaisha Toshiba Compound semiconductor device and method for manufacturing same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3035120A1 (en) * 1980-09-17 1982-04-22 Siemens AG, 1000 Berlin und 8000 München Division of semiconductor rod into wafers - by forming notches or grooves and splitting off wafers with focussed laser light
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
EP1091394A2 (en) * 1999-10-04 2001-04-11 Tokyo Seimitsu Co.,Ltd. Method for manufacturing thin semiconductor chips
WO2003044841A2 (en) * 2001-11-19 2003-05-30 Denselight Semiconductors Pte Ltd. Method of dicing a complex topologically structured wafer
US20040055634A1 (en) * 2002-05-08 2004-03-25 Kabushiki Kaisha Y.Y.L. Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
JP2006245498A (en) * 2005-03-07 2006-09-14 Sharp Corp Substrate manufacturing method and apparatus
WO2007087354A2 (en) * 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
US20080061303A1 (en) * 2006-09-06 2008-03-13 Kabushiki Kaisha Toshiba Compound semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
GB2489397A8 (en) 2013-03-06
GB2489397A (en) 2012-10-03
GB201103720D0 (en) 2011-04-20

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Legal Events

Date Code Title Description
S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 22 FEBRUARY 2017

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20170525 AND 20170531

S117 Correction of errors in patents and applications (sect. 117/patents act 1977)

Free format text: REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 22 FEBRUARY 2017 NOT PROCEEDING WITH ON 23 MAY 2017

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180304