GB2470291A - Improved ion source for mass spectrometry - Google Patents
Improved ion source for mass spectrometry Download PDFInfo
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- GB2470291A GB2470291A GB1008050A GB201008050A GB2470291A GB 2470291 A GB2470291 A GB 2470291A GB 1008050 A GB1008050 A GB 1008050A GB 201008050 A GB201008050 A GB 201008050A GB 2470291 A GB2470291 A GB 2470291A
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- Prior art keywords
- ion source
- ion
- ions
- iii
- subjected
- Prior art date
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Links
- 238000004949 mass spectrometry Methods 0.000 title claims description 5
- 238000005468 ion implantation Methods 0.000 claims abstract description 38
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010936 titanium Substances 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 12
- 150000003624 transition metals Chemical class 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 228
- 239000000126 substance Substances 0.000 claims description 16
- 238000003795 desorption Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000010265 fast atom bombardment Methods 0.000 claims description 4
- 238000004992 fast atom bombardment mass spectroscopy Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052713 technetium Inorganic materials 0.000 claims description 4
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 102100022704 Amyloid-beta precursor protein Human genes 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 208000035699 Distal ileal obstruction syndrome Diseases 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 101000823051 Homo sapiens Amyloid-beta precursor protein Proteins 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 2
- DZHSAHHDTRWUTF-SIQRNXPUSA-N amyloid-beta polypeptide 42 Chemical compound C([C@@H](C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CO)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CCCCN)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)NCC(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C)C(O)=O)[C@@H](C)CC)C(C)C)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@@H](NC(=O)[C@H](CC(C)C)NC(=O)[C@H](CCCCN)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@@H](NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](CC=1C=CC(O)=CC=1)NC(=O)CNC(=O)[C@H](CO)NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](C)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C(C)C)C1=CC=CC=C1 DZHSAHHDTRWUTF-SIQRNXPUSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000000688 desorption electrospray ionisation Methods 0.000 claims description 2
- 238000000132 electrospray ionisation Methods 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 238000001698 laser desorption ionisation Methods 0.000 claims description 2
- 238000000816 matrix-assisted laser desorption--ionisation Methods 0.000 claims description 2
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-RNFDNDRNSA-N nickel-63 Chemical compound [63Ni] PXHVJJICTQNCMI-RNFDNDRNSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 230000002285 radioactive effect Effects 0.000 claims description 2
- 238000005070 sampling Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 3
- FSLJQBWNDCKEHA-UHFFFAOYSA-N S.SS Chemical compound S.SS FSLJQBWNDCKEHA-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000004458 analytical method Methods 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract description 2
- 239000000284 extract Substances 0.000 abstract description 2
- 239000012491 analyte Substances 0.000 description 18
- 229910001220 stainless steel Inorganic materials 0.000 description 17
- 239000010935 stainless steel Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 15
- DMVOXQPQNTYEKQ-UHFFFAOYSA-N biphenyl-4-amine Chemical group C1=CC(N)=CC=C1C1=CC=CC=C1 DMVOXQPQNTYEKQ-UHFFFAOYSA-N 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 7
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 7
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- DDBREPKUVSBGFI-UHFFFAOYSA-N phenobarbital Chemical compound C=1C=CC=CC=1C1(CC)C(=O)NC(=O)NC1=O DDBREPKUVSBGFI-UHFFFAOYSA-N 0.000 description 6
- 229960002695 phenobarbital Drugs 0.000 description 6
- 239000012634 fragment Substances 0.000 description 5
- 238000000752 ionisation method Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- YRSYQUBFNOZVOX-UHFFFAOYSA-N [N+](=O)([O-])C1(C(C=CC(=C1)[N+](=O)[O-])O)C=1C(=CC=CC1)O Chemical compound [N+](=O)([O-])C1(C(C=CC(=C1)[N+](=O)[O-])O)C=1C(=CC=CC1)O YRSYQUBFNOZVOX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- UFBJCMHMOXMLKC-UHFFFAOYSA-N 2,4-dinitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O UFBJCMHMOXMLKC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000011850 initial investigation Methods 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
An ion source is disclosed wherein the ion source is made from a transition metal (especially titanium) which has been subjected to ion implantation. Conventional ion sources can suffer from increased surface contamination following regular analysis of complex matrix extracts. An implanted transition metal such as titanium offers a more robust and less reactive surface and therefore requires less extensive cleaning to maintain the same high performance.
Description
ION SOURCE
This application claims priority to and benefit of U.S. Provisional Patent Application Serial No. US 61/181,428 filed on 27 May 2009 and United Kingdom Patent Application No. 0908248.8 filed on 13 May 2009. The entire contents of these applications are incorporated herein by reference.
BACKGROUND OF THE INVENTION
The present invention relates to an ion source.
Mass spectrometers comprising a gas chromatograph coupled to an Electron lonisation ("El") or Chemical tonisation ("Cl") ion source are well known. A gas chromatograph comprises a packed column or open' capillary tube located in a heated chamber. Analyte gas molecules are caused to pass through the column, Gas molecules having different sizes and structures will take different amounts of time to elute from the gas chromatograph.
Ions which emerge from the gas chromatograph are then commonly ionised either by an Electron lonisation ion source or by a Chemical lonisation ion source.
An El ion source comprises an ion chamber through which an electron beam is passed. Analyte gas molecules interact with the electron beam and are subsequently ionised. The ionisation process is commonly referred to as being a hard ionisation process in that the analyte molecules are caused to fragment as a result of the ionisation process.
The resulting El fragment ions are then mass analysed.
A Cl ion source utilises a reagent gas (e.g. methane or ammonia) and may be operated in either a positive or negative mode of operation. Neutral reagent gas is arranged to be ionised by interactions with free electrons emitted from a filament. The S..... resulting reagent ions are then caused to interact and ionise neutral analyte molecules resulting in the formation of analyte ions. The resulting analyte ions are then mass analysed.
The coupling of a gas chromatography column with an El or Cl ion source and a mass spectrometer is a powerful technique that is widely used in many laboratories.
Conventionally, El and Cl ion sources comprise ion source chambers made from stainless steel. Stainless steel is considered to be relatively inert and non-reactive. However, conventional El and Cl ion source chambers need regular cleaning in order to maintain high performance.
Conventional El and Cl ion source chambers can suffer from increased surface contamination following regular analysis of complex matrix extracts such as urine, saliva, plasma, whole blood, waters and soils.
SUMMARY OF THE INVENTION
According to an aspect of the present invention there is provided a mass spectrometer comprising an ion source formed from titanium which has been subjected to ion implantation.
The ion source preferably comprises one or more ionisation ôhambers formed from titanium which has been subjected to ion implantation.
The ion source preferably further comprises one or more repeller electrodes formed from titanium which has been subjected to ion implantation.
According to an embodiment: (i) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer surface of the ion source has been subjected to ion implantation; and/or (ii) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer surface of the one or more ionisation chambers has been subjected to ion implantation; and/or (iii) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer surface of the one or more repeller electrodes forming part of the ion source has been subjected to ion implantation.
The ion source and/or the one or more ionisation chambers and/or the one or more repeller electrodes forming part of the ion source preferably comprise titanium which has been subjected to ion implantation with ions selected from the group consisting of: (I) nitrogen; (ii) carbon; (iii) boron; (iv) oxygen; (v) argon; (vi) calcium; (vii) phosphorous; (viii) carbon-oxygen; (ix) neon; (x) sodium; (xi) chromium; (xii) vanadium; and (xii) fluorine.
The ion source and/or the one or more lonisation chambers and/or the one or more repeller electrodes forming part of the ion source have preferably been subjected to an ion implantation dose selected from the group consisting of: (i) < 1013 ions/cm2; (ii) 10131014 ions/cm2; (iii) 1014_1015 ions/cm2; (iv) 1015_1016 ions/cm2; (v) 1016_1017 ions/cm2; (vi) 1017_ S.....
* 10 ions/cm2; and (vii)> 1018 ions/cm2.
* *. 30 The surface of the ion source and/or the one or more ionisation chambers and/or the one or more repeller electrodes forming part of the ion source which has been subjected to ion implantation preferably has either: (a) a resistivity selected from the group consisting of: (i) < i0 fl-rn; (ii) < 10' fl-rn; (iii) < 10 0-rn; (iv) < 10 fl-rn; (v) < ici fl-rn; (vi) i0-i0 0-rn; (vii) i0-i0 0-rn; (viii) 10-10 0-rn; and (ix) i0&i0 fl-rn; and/or (b) a Vickers hardness number or Vickers Pyramid Number (HV) selected from the group consisting of: (i) > 1000; (ii) 1000-1100; (iii) 1100-1200; (iv) 1200-1300; (v) 1300- 1400; (vi) 1400-1500; (vii) 1500-1600; (viii) 1600-1700; (ix) 1700-1800; (x) 1800-1900; (xi) 1 900-2000; (xii) 2000-2100; (xiii) 21 00-2200; (xiv) 2200-2300; (xv) 2300-2400; (xvi) 2400- 2500; (xvii) 2500-2600; (xviii) 2600-2700; (xix) 2700-2800; (xx) 2800-2900; (xxi) 2900- 3000; (xxii) 3000-3100; (xxiii) 3100-3200; (xxiv) 3200-3300; (xv) 3300-3400; (xvi) 3400- 3500; and (xvii)> 3500, wherein the Vickers hardness number or Vickers Pyramid Number is determined at a load of 30, 40, 50, 60 or 70 kg; and/or (c) a Vickers microhardness selected from the group consisting of: (i)> 1000 kg/mm; (ii) 1000-1100 kg/mm; (iii) 1100-1200 kg/mm; (iv) 1200-1300 kg/mm; (v) 1300-1400 kg/mm; (vi) 1400-1500 kg/mm; (vii) 1500-1 600 kg/mm; (viii) 1600-1 700 kg/mm; (ix) 1700- 1800 kg/mm; (x) 1800-1900 kg/mm; (xi) 1900-2000 kg/mm; (xii) 2000-21 00 kg/mm; (xiii) 2100-2200 kg/mm; (xiv) 2200-2300 kg/mm; (xv) 2300-2400 kg/mm; (xvi) 2400-2500 kg/mm; (xvii) 2500-2600 kg/mm; (xviii) 2600-2700 kg/mm; (xix) 2700-2800 kg/mm; (xx) 2800-2900 kg/mm; (xxi) 2900-3000 kg/mm; (xxii) 3000-3100 kg/mm; (xxiii) 31 00-3200 kg/mm; (xxiv) 3200-3300 kg/mm; (xv) 3300-3400 kg/mm; (xvi) 3400-3500 kg/mm; and (xvii) > 3500 kg/mm, and/or (d) a thickness selected from the group consisting of: (I) < 1 pm; (ii) 1-2 pm; (iii) 2-3 pm; (iv) 3-4 pm; (v) 4-5 pm; (vi) 5-6 pm; (vii) 6-7 pm; (viii) 7-8 pm; (ix) 8-9 pm; (x) 9-10 pm; (xi)> 10 pm; and/or (e) a density selected from the group consisting of: (i) < 3.0 g cm3; (ii) 3.0-3.5 g cm 3; (iii) 3.5-4.0 g cm3; (iv) 4.0-4.5 g cm3; (v) 4.5-5.0 g cm3; (vi) 5.0-5.5 g cm3; (vii) 5.5-6.0 g cm3; (viii) 6.0-6.5 g crn3; (ix) 6.5-7.0 g cm3; (x) 7.0-7.5 g cm3; (xi) 7.5-8.0 g cm3; (xii) 8.0- 8.5 g cm3; (xiii) 8.5-9.0 g cm3; (xiv) 9.0-9.5 g cm3; (xv) 9.5-10.0 g cm3; (xvi) 10.0-1 0.5 g cm3; (xvii) 10.5-11.0 g cm3; (xviii) 11.0-11.5 g cm3; (xix) 11.5-12.0 g cm3; (xx) 12.0-12.5 g cm3; (xxi) 12.5-13.0 g cm3; (xxii) 13.0-13.5 g cm3; (xxiii) 13.5-14.0 g cm3; (xxiv) 14.0-14.5 g cm3; (xxv) 14.5-15.0 g cm3; (xxvi) 15.0-15.5 g cm3; (xxvii) 15.5-16.0 g cm3; (xxviii) 16.0- 16.5g cm3; (xxix) 16.5-17.Og cm3; (xxx) 17.0-17.5g cm3; (xxxi) 17.5-18.Og cm-3; (xxxii) 18.0-18.5 g cm3; (xxxiii) 18.5-19.0 g cm3; (xxxiv) 19.0-19.5 g cm3; (xxxv) 19.5-20.0 g cm3; . and (xxxvi)> 20.0 g cm3; and/or *o..
(f) a coefficient of friction selected from the group consisting of: (i) <0.01; (ii) 0.01-*....S * 0.02; (iii) 0.02-0.03; (iv) 0.03-0.04; (v) 0.04-0.05; (vi) 0.05-0.06; (vii) 0.06-0.07; (viii) 0.07- : ** 0.08; (ix) 0.08-0.09; (x) 0.09-0.10; and (xi) > 0.1.
The ion source is preferably selected from the group consisting of: (i) an Electrospray ionisation ("ESI") ion source; (ii) an Atmospheric Pressure Photo lonisation ("APPI") ion source; (iii) an Atmospheric Pressure Chemical lonisation ("APCI") ion source; *.. (iv) a Matrix Assisted Laser Desorption lonisation ("MALDI") ion source; (v) a Laser Desorption lonisation ("LDI") ion source; (vi) an Atmospheric Pressure lonisation ("API") ion source; (vii) a Desorption lonisation on Silicon ("DIOS") ion source; (viii) an Electron Impact ("El") ion source; (ix) a Chemical lonisation ("Cl') ion source; (x) a Field lonisation ("Fl") ion source; (xi) a Field Desorption ("FD") ion source; (xii) an Inductively Coupled Plasma ("ICP") ion source; (xiii) a Fast Atom Bombardment ("FAB") ion source; (xiv) a Liquid Secondary Ion Mass Spectrometry ("LSIMS") ion source; (xv) a Desorption Electrospray lonisation ("DESI") ion source; (xvi) a Nickel-63 radioactive ion source; (xvii) an Atmospheric Pressure Matrix Assisted Laser Desorption lonisation ion source; (xviii) a Thermospray ion source; (xix) an Atmospheric Sampling Glow Discharge lonisation ("ASGDI") ion source; and (xx) a Glow Discharge ("GD') ion source.
Preferably, the portion of the ion source which has been subjected to ion implantation is selected from the group consisting of: (I) an ion chamber; (ii) a repeller electrode; and (iii) an exit plate or exit aperture arranged at the exit of the ion source through which ions of interest are desired to be transmitted.
According to an aspect of the present invention there is provided a method of mass spectrometry comprising: ionising ions in an ion source formed from titanium which has been subjected to ion implantation.
According to an aspect of the present invention there is provided a method of making an ion source and/or one or more ionisation chambers and/or one or more repeller electrodes forming part of an ion source for a mass spectrometer comprising: forming an ion source and/or one or more ionisation chambers and/or one or more repeller electrodes forming part of the ion source of a mass spectrometer from titanium; and subjecting the ion source and/or the one or more ionisation chambers and/or the one or more repeller electrodes forming part of the ion source to ion implantation.
The ion source and/or the one or more ionisation chambers and/or the one or more repeller electrodes forming part of the ion source are preferably subjected to an ion implantation dose selected from the group consisting of: (i) < 1013 ions/cm2; (ii) 10131 014 ions/cm2; (iii) 1014_1015 ions/cm2; (iv) 1015_1016 ions/cm2; (v) 1016_1017 ions/cm2; (vi) 1017_ 1018 ions/cm2; and (vii)> 1018 ions/cm2.
The method preferably further comprises accelerating ions to be implanted into the ion source and/or the one or more ionisation chambers and/or the one or more repeller *:: :: electrodes forming part of the ion source to a kinetic energy selected from the group : 25 consisting of: (i) < 10 keV; (ii) 10-50 keV; (iii) 50-100 keV; (iv) 100-150 keV; (v) 150-200 * key; (vi) 200-250 keV; (vii) 250-300keV; (viii) 300-350 key; (ix) 350-400 keV; (x) 400-450 key; (xi) 450-500 keV; and (xii)> 500 keV.
* According to another aspect of the present invention there is provided a mass * spectrometer comprising an ion source formed from a transition metal which has been subjected to ion implantation.
The transition metal is preferably selected from the group consisting of: (i) scandium; (ii) titanium; (iii) vanadium; (iv) chromium; (v) manganese; (vi) iron; (vii) cobalt; (viii) nickel; (ix) copper; (x) zinc; (xi) yttrium; (xii) zirconium; (xiii) niobium; (xiv) molybdenum; (xv) technetium; (xvi) ruthenium; (xvii) rhodium; (xviii) palladium; (xix) silver; (xx) cadmium; (xxi) lanthanum; (xxii) hafnium; (xxiii) tantalum; (xxiv) tungsten; (xxv) rhenium; (xxvi) osmium; (xxvii) iridium; (xxviii) platinum; and (xxix) gold.
According to another aspect of the present invention there is provided a method of mass spectrometry comprising: ionising ions in an ion source formed from a transition metal which has been subjected to ion implantation.
According to another aspect of the present invention there is provided a method of making an ion source and/or one or more ionisation chambers and/or one or more repeller electrodes forming part of an ion source for a mass spectrometer comprising: forming an ion source and/or one or more ionisation chambers and/or one or more repeller electrodes forming part of the ion source of a mass spectrometer from a transition metal; and subjecting the ion source and/or the one or more ionisation chambers and/or the one or more repeller electrodes forming part of the ion source to ion implantation.
The transition metal is preferably selected from the group consisting of: (i) scandium; (ii) titanium; (iii) vanadium; (iv) chromium; (v) manganese; (vi) iron; (vii) cobalt; (viii) nickel; (ix) copper; (x) zinc; (xi) yttrium; (xii) zirconium; (xiii) niobium; (xiv) molybdenum; (xv) technetium; (xvi) ruthenium; (xvii) rhodium; (xviii) palladium; (xix) silver; (xx) cadmium; (xxi) lanthanum; (xxii) hafnium; (xxiii) tantalum; (xxiv) tungsten; (xxv) rhenium; (xxvi) osmium; (xxvii) iridium; (xxviii) platinum; and (xxix) gold.
Preferably, the portion of the ion source which has been subjected to ion implantation is selected from the group consisting of: (i) an ion chamber; (ii) a repeller electrode; and (iii) an exit plate or exit aperture arranged at the exit of the ion source through which ions of interest are desired to be transmitted: The preferred embodiment relates to an El or Cl ion source wherein the ion source comprises titanium which has been subjected to ion implantation in order to passivate the surfaces of the El or Cl source region thereby reducing the surface reactions of molecules prior to ionisation.
Chemical standards were used to investigate the effects of a modified ion source.
The effects on full scan sensitivity/ionisation were observed.
: 25 It is believed that a modified ion source according to the preferred embodiment * reduces adsorption/degradation or decomposition of compounds upon contact with the surface prior to ionisation. Data has been produced to show that the chemical nature of * the analyte seems to have a significant effect on the sensitivity. For example, a relatively U..
* polar compound (or one containing a polar moity or weak bonds prone to thermal degradation) can be detected with increased sensitivity from a coated volume in : comparison to a cleaned stainless steel ion source.
The preferred embodiment is particularly advantageous in that a clean conductive (or semi conductive) surface can be provided which is robust to abrasive cleaning and is inert. The surface reduces adsorption, catalysis and degradation/decomposition and hence visual residence time of the chemical within the source environment. The improved ion source also exhibits an increase in apparent sensitivity (compound dependant) and improved sample robustness/reproducibility.
The preferred embodiment is concerned with an improved inert, semi-conductive inorganic ion source surface.
According to the preferred embodiment the source volume, trap, repeller and ion exit plate of an ion source may comprise titanium which has been subjected to ion implantation.
BRIEF DESCRIPTION OF THE DRAWINGS
Various embodiments of the present invention together with other arrangements given for illustrative purposes only will now be described, by way of example only, and with reference to the accompanying drawings in which: Fig. I shows a schematic diagram of an Electron lonisation ion source according to an embodiment of the present invention; Fig. 2 shows a schematic diagram of an Chemical lonisation ion source according to an embodiment of the present invention; Fig. 3 shows the chemical structure of 2,4 dinitorphenol; Fig. 4 shows the chemical structure of 4 amino biphenyl; Fig. 5 shows the chemical structure of phenobarbital; and Fig. 6 shows a comparison of the average intensities, siganal-to-noise, noise amplitude and area observed for three compounds with different ion sources.
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will now be described. Fig. I shows a schematic diagram of an Electron lonisation ion source I comprising a housing 2 forming a chamber and a repeller electrode 3. A neutral analyte gas is introduced from a gas chromatograph into the ion chamber 2. An electron beam 4 is arranged to pass from a heated filament 5 to an electron collector 6. Analyte gas molecules within the ion chamber 2 are preferably caused to interact with the electron beam 4 and as a result the analyte * **.
molecules are ionised and form analyte ions. The ionisation process is commonly referred to as being a hard ionisation process in that the analyte molecules fragment during the lonisation process. The resulting analyte fragment ions are repelled from the ion chamber 2 by the repeller electrode 3. The analyte fragment ions may according to an embodiment * pass through a lens system 7 before being onwardly transmitted in the direction shown by *** arrow 8 to subsequent vacuum stages of a mass spectrometer.
Fig. 2 shows a Chemical lonisation ion source 9 comprising an ion chamber 10 and optional ion repeller 11. A heated filament 12 serves as an electron source and may according to one embodiment be located between an optional repeller plate 13 and an electron lens 14. The electron lens 14 may comprise a plate with a rectangular slot or other shaped aperture aligned with the heated filament 12. Electrons produced by the heated filament 12 are directed into the inside of the ion chamber 10 and preferably collide with neutral reagent gas molecules such as methane and ionise the reagent gas. The resulting reagent ions are then preferably caused to interact with neutral analyte molecules with the result that analyte ions are formed. Analyte ions may be repelled from the chamber 10 by an optional repeller electrode 11 or otherwise extracted from the chamber 10. However, according to a preferred embodiment both the repeller plate 13 and the repeller electrode 11 are omitted. The analyte ions may pass through a lens system 12 prior to being onwardly transmitted to subsequent vacuum stages of a mass spectrometer.
Source surface coatings which were applied to an Electron lonisation ion source which was operated in an El+ mode of operation were investigated using a mixture of semi polar CC amenable compounds. The effect on full scan sensitivity was investigated using a gas chromatograph with a tandem mass spectrometer.
The El ion source which was investigated comprised a source volume, a trap, a repeller and an ion exit plate. These components were all coated with titanium carbide in order to demonstrate the advantages of a modified system.
The following results relate to data which was obtained from: (I) a standard used stainless steel ion source; (ii) an ion source wherein the ion source chamber and other components were coated with titanium carbide (TIC); and (iii) a standard cleaned stainless steel ion source.
The ion sources were investigated using a mixture of the following compounds: 2,4 dinitrobiphenol, 4 amino biphenyl and phenobarbital. The structures of 2,4 dinitrobiphenol, 4 amino biphenyl and phenobarbital are shown in Figs. 3-5 respectively.
Fig. 6 shows the ratio increase of the averaged surface coated and cleaned stainless steel ion sources against an uncleaned stainless steel ion source surface for the three compounds. Factor response differences for signal intensity, signal to noise, chemical noise amplitude and peak area are shown, The TIC coated ion source volume exhibited a signal intensity factor increase of 3.1 for 2,4 dinitrobiphenol compared to the aged stainless steel ion source. Similarly, the TIC coated ion source exhibited a signal intensity factor increase of 1.6 for 4 amino biphenyl and an increase of 2.5 for phenobarbital compared to the aged stainless steel ion source.
The cleaned stainless steel ion source produced an immediate improvement in signal intensity compared to the aged stainless steel ion source for all the analytes by a factor of 1.6 for 2,4 dinitrobiphenol, by a factor of 3.3 for 4 amino-biphenyl and by a factor of 1.3 for phenobarbital.
The signal improvements are greater for the TIC coated ion source but lower than * the cleaned stainless steel ion source for 4 amino biphenyl. Of significance is the lower * noise amplitude observed for the TiC coated ion source compared to the cleaned stainless steel ion source suggesting possible noise from the cleaning process.
However, the noise amplitude for both the cleaned stainless steel ion source and the TiC coated ion source was higher than the used stainless steel ion source reducing the signal-to-noise (S:N) value while the TiC surface ion source increased the signal more than the noise resulting in an much improved S:N value for all the compounds. -Additionally, the variation for three compounds under investigation of the TiC coated ion source against the cleaned stainless steel ion source are shown in Figure 7.
Within the table format is included the factor response differences for the signal intensity, signal to noise ratio (RMS) chemical noise amplitude and peak area.
An improvement in signal intensity, signal to noise (due to the relative drop in noise) and area counts were observed for both 2,4 dinitrophenol and phenobarbital. These compounds are of a more polar nature and have a potential reactive moiety present on the molecule. The TiC coated ion source provided lower sensitivity in scanning sensitivity for 4-aminobiphenyl compared to the cleaned stainless steel ion source.
Although the experimental results described above were obtained using an ion source coated with titanium carbide, initial investigations suggest that similar results occur when the ion source is made from titanium or other transition metals which have been subjected to ion implantation according to the preferred embodiment.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the scope of the invention as set forth in the accompanying claims. I... * S *
S..... * S * S. * I * *S* S * **.* *S55 * ***.* * I
Claims (19)
- Claims 1. A mass spectrometer comprising an ion source formed from titanium which has been subjected to ion implantation.
- 2. A mass spectrometer as claimed in claim 1, wherein said ion source comprises one or more ionisation chambers formed from titanium which has been subjected to ion implantation.
- 3. A mass spectrometer as claimed in claim I or 2, wherein said ion source further comprises one or more repeller electrodes formed from titanium which has been subjected to ion implantation.
- 4. A mass spectrometer as claimed in any of claims 1, 2 or 3, wherein: (i) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer surface of said ion source has been subjected to ion implantation; and/or (ii) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer surface of said one or more ionisation chambers has been subjected to ion implantation; and/or (iii) at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, : 25 65%, 70%, 75%, 80%, 85%, 90%, 95% or 100% of an inner surface and/or an outer * surface of said one or more repeller electrodes forming part of said ion source has been : *** subjected to ion implantation. Is. II a..
- 5. A mass spectrometer as claimed in any preceding claim, wherein said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source comprise titanium which has been subjected to ion implantation with ions selected from the group consisting of: (i) nitrogen; (ii) carbon; (iii) boron; (iv) oxygen; (v) argon; (vi) calcium; (vii) phosphorous; (viii) carbon-oxygen; (ix) neon; (x) sodium; (xi) chromium; (xii) vanadium; and (xii) fluorine.
- 6. A mass spectrometer as claimed in any preceding claim, wherein said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source have been subjected to an ion implantation dose selected from the group consisting of: (i) < 1013 ions/cm2; (ii) 1013_1014 ions/cm2; (iii) 1014_lOis ions/cm2; (iv) 10151016 ions/cm2; (v) 1016_1017 ions/cm2; (vi) 1017.1018 ions/cm2; and (vii)> 1018 ions/cm2. -*10-
- 7. A mass spectrometer as claimed in any preceding claim, wherein the surface of said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source which has been subjected to ion implantation has either: (a) a resistivity selected from the group consisting of: (i) < 1 0 fl-rn; (ii) < I 0 fl-rn; (iii) < i0 fl-rn; (iv) < 10 fl-rn; (v) < i0 fl-rn; (vi) i0-i0 fl-rn; (vii) i04-i 0 fl-rn; (viii) iO.1O.6 fl-rn; and (ix) i0-i07 fl-rn; and/or (b) a Vickers hardness number or Vickers Pyramid Number (NV) selected from the group consisting of: (i)> 1000; (ii) 1000-1100; (iii) 1100-1200; (iv) 1200-1300; (v) 1300- 1400; (vi) 1400-1500; (vii) 1500-1600; (viii) 1600-1700; (ix) 1700-1800; (x) 1800-1900; (xi) 1900-2000; (xii) 2000-2100; (xiii) 2100-2200; (xiv) 2200-2300; (xv) 2300-2400; (xvi) 2400- 2500; (xvii) 2500-2600; (xviii) 2600-2700; (xix) 2700-2800; (xx) 2800-2900; (xxi) 2900- 3000; (xxii) 3000-31 00; (xxiii) 3100-3200; (xxiv) 3200-3300; (xv) 3300-3400; (xvi) 3400- 3500; and (xvii)> 3500, wherein said Vickers hardness number or Vickers Pyramid Number is determined at a load of 30, 40, 50, 60 or 70kg; and/or (c) a Vickers microhardness selected from the group consisting of: (i)> 1000 kg/mm; (ii) 1000-1100 kg/mm; (iii) 1100-1200 kg/mm; (iv) 1200-1300 kg/mm; (v) 1300-1400 kg/mm; (vi) 1400-1500 kg/mm; (vii) 1500-1600 kg/mm; (viii) 1600-1700 kg/mm; (ix) 1700- 1800 kg/mm; (x) 1800-1900 kg/mm; (xi) 1900-2000 kg/mm; (xii) 2000-21 00 kg/mm; (xiii) 2100-2200 kg/mm; (xiv) 2200-2300 kg/mm; (xv) 2300-2400 kg/mm; (xvi) 2400-2500 kg/mm; (xvii) 2500-2600 kg/mm; (xviii) 2600-2700 kg/mm; (xix) 2700-2800 kg/mm; (xx) 2800-2900 kg/mm; (xxi) 2900-3000 kg/mm; (xxii) 3000-31 00 kg/mm; (xxiii) 3100-3200 kg/mm; (xxiv) 3200-3300 kg/mm; (xv) 3300-3400 kg/mm; (xvi) 3400-3500 kg/mm; and (xvii) > 3500 kg/mm, and/or (d) a thickness selected from the group consisting of: (i) < 1 pm; (ii) 1-2 pm; (iii) 2-3 pm; (iv) 3-4 pm; (v) 4-5 pm; (vi) 5-6 pm; (vii) 6-7 pm; (viii) 7-8 pm; (ix) 8-9 pm; (x) 9-10 pm; : .. (xi)> lOpm;and/or (e) a density selected from the group consisting of: (i) < 3.0 g cm3; (ii) 3.0-3.5 g cm 3; (iii) 3.5-4.0 g cm3; (iv) 4.0-4.5 g cm3; (v) 4.5-5.0 g cm3; (vi) 5.0-5.5 g cm3; (vii) 5.5-6.0 g cm3; (viii) 6.0-6.5 g crn3; (ix) 6.5-7.0 g cm3; (x) 7.0-7.5 g cm3; (xi) 7.5-8.0 g cm3; (xii) 8.0- 8.5g cm3; (xiii) 8.5-9.0 g crn3; (xiv) 9.0-9.5 g cm3; (xv) 9.5-10.0 g cm3; (xvi) 10.0-10.5 g * . cm; (xvii) 10.5-11.0 g cm; (xviii) 11.0-11.5 g cm; (xix) 11.5-12.0 g cm; (xx) 12.0-12.5g cm3; (xxi) 12.5-13.0 g cm3; (xxii) 13.0-13.5 g cm3; (xxiii) 13.5-14.0 g cm3; (xxiv) 14.0-14.5 g cm3; (xxv) 14.5-15.0 g cm3; (xxvi) 15.0-15.5 g cm3; (xxvii) 15.5-16.0 g cm3; (xxviii) 16.0- 16.5 g crn3; (xxix) 16.5-17.0 g cm3; (xxx) 17.0-17.5 g cm3; (xxxi) 17.5-18.0 g cm3; (xxxii) 18.0-18.5 g cm3; (xxxiii) 18.5-19.0 g cm3; (xxxiv) 19.0-1 9.5 g cm3; (xxxv) 19.5-20.0 g cm3; and (xxxvi)> 20.0 g cm3; and/or (1) a coefficient of friction selected from the group consisting of: (i) < 0.01; (ii) 0.01- 0.02; (iii) 0.02-0.03; (iv) 0.03-0.04; (v) 0.04-0.05; (vi) 0.05-0.06; (vii) 0.06-0.07; (viii) 0.07- 0.08; (ix) 0.08-0.09; (x) 0.09-0.10; and (xi)> 0.1.
- 8. A mass spectrometer as claimed in any preceding claim, wherein said ion source is selected from the group consisting of: (i) an Electrospray ionisation ("ESI") ion source; (ii) an Atmospheric Pressure Photo lonisation ("APPI") ion source; (iii) an Atmospheric Pressure Chemical lonisation ("APCI") ion source; (iv) a Matrix Assisted Laser Desorption lonisation ("MALDI") ion source; (v) a Laser Desorption lonisation ("LDI") ion source; (vi) an Atmospheric Pressure lonisation ("API") ion source; (vii) a Desorption lonisation on Silicon ("DIOS") ion source; (viii) an Electron Impact ("El") ion source; (ix) a Chemical lonisation ("Cl") ion source; (x) a Field lonisation ("Fl") ion source; (xi) a Field Desorption ("FD") ion source; (xii) an Inductively Coupled Plasma ("ICP") ion source; (xiii) a Fast Atom Bombardment ("FAB") ion source; (xiv) a Liquid Secondary Ion Mass Spectrometry ("LSIMS") ion source; (xv) a Desorption Electrospray lonisation ("DESI") ion source; (xvi) a Nickel-63 radioactive ion source; (xvii) an Atmospheric Pressure Matrix Assisted Laser Desorption lonisation ion source; (xviii) a Thermospray ion source; (xix) an Atmospheric Sampling Glow Discharge lonisation ("ASGDI") ion source; and (xx) a Glow Discharge ("GD") ion source.
- 9. A mass spectrometer as claimed in any preceding claim, wherein said portion of said ion source which has been subjected to ion implantation is selected from the group consisting of: (i) an ion chamber; (ii) a repeller electrode; and (iii) an exit plate or exit aperture arranged at the exit of said ion source through which ions of interest are desired to be transmitted.
- 10. A method of mass spectrometry comprising: .. ionising ions in an ion source formed from titanium which has been subjected to ion implantation. * *: **
- 11. A method of making an ion source and/or one or more ionisation chambers and/or one or more repeller electrodes forming part of an ion source for a mass spectrometer **.comprising: forming an ion source and/or one or more ionisation chambers and/or one or more : repeller electrodes forming part of said ion source of a mass spectrometer from titanium; and subjecting said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source to ion implantation.
- 12. A method as claimed in claim 11, further comprising subjecting said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source to an ion implantation dose selected from the group consisting of: (i) < 1013 ions/cm2; (ii) 1 013_i 014 ions/cm2; (iii) 1014_I 015 ions/cm2; (iv) 1 015_ 1016 ions/cm2; (v) 1016_1017 ions/cm2; (vi) 10171O18 ions/cm2; and (vii)> 1018 ions/cm2. -12-
- 13. A method as claimed in claim 11 or 12, further comprising accelerating ions to be implanted into said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source to a kinetic energy selected from the group consisting of: (i) < 10 keV; (ii) 10-50 keV; (iii) 50-100 keV; (iv) 100-1 50 key; (v) 150-200 key; (vi) 200-250 key; (vii) 250-300 key; (viii) 300-350 keV; (ix) 350-400 key; (x) 400-450 key; (xi) 450-500 key; and (xii) > 500 keV.
- 14. A mass spectrometer comprising an ion source formed from a transition metal which has been subjected to ion implantation.
- 15. A mass spectrometer as claimed in claim 14, wherein said transition metal is selected from the group consisting of: (i) scandium; (ii) titanium; (iii) vanadium; (iv) chromium; (v) manganese; (vi) iron; (vii) cobalt; (viii) nickel; (ix) copper; (x) zinc; (xi) yttrium; (xii) zirconium; (xiii) niobium; (xiv) molybdenum; (xv) technetium; (xvi) ruthenium; (xvii) rhodium; (xviii) palladium; (xix) silver; (xx) cadmium; (xxi) lanthanum; (xxii) hafnium; (xxiii) tantalum; (xxiv) tungsten; (xxv) rhenium; (xxvi) osmium; (xxvii) iridium; (xxviii) platinum; and (xxix) gold.
- 16. A method of mass spectrometry comprising: ionising ions in an ion source formed from a transition metal which has been subjected to ion implantation.
- 17. A method of making an ion source and/or one or more ionisation chambers and/or *::::* one or more repeller electrodes forming part of an ion source for a mass spectrometer : 25 comprising: * forming an ion source and/or one or more ionisation chambers and/or one or more :.** repeller electrodes forming part of said ion source of a mass spectrometer from a transition * metal; and ** * subjecting said ion source and/or said one or more ionisation chambers and/or said one or more repeller electrodes forming part of said ion source to ion implantation.
- 18. A method as claimed in claim 16 or 17, wherein said transition metal is selected from the group consisting of: (i) scandium; (ii) titanium; (iii) vanadium; (iv) chromium; (v) manganese; (vi) iron; (vii) cobalt; (viii) nickel; (ix) copper; (x) zinc; (xi) yttrium; (xii) zirconium; (xiii) niobium; (xiv) molybdenum; (xv) technetium; (xvi) ruthenium; (xvii) rhodium; (xviii) palladium; (xix) silver; (xx) cadmium; (xxi) lanthanum; (xxii) hafnium; (xxiii) tantalum; (xxiv) tungsten; (xxv) rhenium; (xxvi) osmium; (xxvii) iridium; (xxviii) platinum; and (xxix) gold.
- 19. A method as claimed in any of claims 14-18, wherein said portion of said ion source which has been subjected to ion implantation is selected from the group consisting of: (i) an ion chamber; (ii) a repeller electrode; and (iii) an exit plate or exit aperture arranged at the exit of said ion source through which ions of interest are desired to be transmitted. * . S... * . * .* * S S *.. SS *S.SS *..S*SS*** * S
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0908248.8A GB0908248D0 (en) | 2009-05-13 | 2009-05-13 | Ion source |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201008050D0 GB201008050D0 (en) | 2010-06-30 |
| GB2470291A true GB2470291A (en) | 2010-11-17 |
| GB2470291B GB2470291B (en) | 2011-12-14 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB0908248.8A Ceased GB0908248D0 (en) | 2009-05-13 | 2009-05-13 | Ion source |
| GB1008050.5A Active GB2470291B (en) | 2009-05-13 | 2010-05-13 | Ion source |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB0908248.8A Ceased GB0908248D0 (en) | 2009-05-13 | 2009-05-13 | Ion source |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB0908248D0 (en) |
| WO (1) | WO2010131006A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656820A (en) * | 1994-11-18 | 1997-08-12 | Kabushiki Kaisha Toshiba | Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device |
| US20030146378A1 (en) * | 2002-02-01 | 2003-08-07 | Alex Mordehai | Skimmer for mass spectrometry |
| US6608318B1 (en) * | 2000-07-31 | 2003-08-19 | Agilent Technologies, Inc. | Ionization chamber for reactive samples |
| JP2004186113A (en) * | 2002-12-06 | 2004-07-02 | Sakaguchi Giken:Kk | Spray needle for electro-spray ionizing device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03266346A (en) * | 1990-03-14 | 1991-11-27 | Toshiba Corp | Apparatus for generating ion |
| US7009176B2 (en) * | 2004-03-08 | 2006-03-07 | Thermo Finnigan Llc | Titanium ion transfer components for use in mass spectrometry |
-
2009
- 2009-05-13 GB GBGB0908248.8A patent/GB0908248D0/en not_active Ceased
-
2010
- 2010-05-13 GB GB1008050.5A patent/GB2470291B/en active Active
- 2010-05-13 WO PCT/GB2010/000966 patent/WO2010131006A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656820A (en) * | 1994-11-18 | 1997-08-12 | Kabushiki Kaisha Toshiba | Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device |
| US6608318B1 (en) * | 2000-07-31 | 2003-08-19 | Agilent Technologies, Inc. | Ionization chamber for reactive samples |
| US20030146378A1 (en) * | 2002-02-01 | 2003-08-07 | Alex Mordehai | Skimmer for mass spectrometry |
| JP2004186113A (en) * | 2002-12-06 | 2004-07-02 | Sakaguchi Giken:Kk | Spray needle for electro-spray ionizing device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0908248D0 (en) | 2009-06-24 |
| GB2470291B (en) | 2011-12-14 |
| WO2010131006A1 (en) | 2010-11-18 |
| GB201008050D0 (en) | 2010-06-30 |
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