GB2466502B - CCD Sensor - Google Patents

CCD Sensor

Info

Publication number
GB2466502B
GB2466502B GB0823470A GB0823470A GB2466502B GB 2466502 B GB2466502 B GB 2466502B GB 0823470 A GB0823470 A GB 0823470A GB 0823470 A GB0823470 A GB 0823470A GB 2466502 B GB2466502 B GB 2466502B
Authority
GB
United Kingdom
Prior art keywords
ccd sensor
ccd
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0823470A
Other versions
GB0823470D0 (en
GB2466502A (en
Inventor
David James Burt
Paul Andrew Jerram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
e2v Technologies UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Technologies UK Ltd filed Critical e2v Technologies UK Ltd
Priority to GB0823470A priority Critical patent/GB2466502B/en
Publication of GB0823470D0 publication Critical patent/GB0823470D0/en
Priority to PCT/GB2009/002899 priority patent/WO2010072993A1/en
Publication of GB2466502A publication Critical patent/GB2466502A/en
Application granted granted Critical
Publication of GB2466502B publication Critical patent/GB2466502B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
GB0823470A 2008-12-23 2008-12-23 CCD Sensor Active GB2466502B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0823470A GB2466502B (en) 2008-12-23 2008-12-23 CCD Sensor
PCT/GB2009/002899 WO2010072993A1 (en) 2008-12-23 2009-12-16 Ccd sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0823470A GB2466502B (en) 2008-12-23 2008-12-23 CCD Sensor

Publications (3)

Publication Number Publication Date
GB0823470D0 GB0823470D0 (en) 2009-01-28
GB2466502A GB2466502A (en) 2010-06-30
GB2466502B true GB2466502B (en) 2013-09-04

Family

ID=40344134

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0823470A Active GB2466502B (en) 2008-12-23 2008-12-23 CCD Sensor

Country Status (2)

Country Link
GB (1) GB2466502B (en)
WO (1) WO2010072993A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608337B2 (en) * 2001-04-12 2003-08-19 Ise Tex, Inc Image sensor with an enhanced near infra-red spectral response and method of making
WO2006018470A1 (en) * 2004-08-20 2006-02-23 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US7271468B2 (en) * 2005-02-16 2007-09-18 The Regents Of The University Of California High-voltage compatible, full-depleted CCD

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6025585A (en) * 1996-11-01 2000-02-15 The Regents Of The University Of California Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
EP1790011A4 (en) * 2004-08-20 2011-01-05 Artto Aurola Semiconductor radiation detector with a modified internal gate structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608337B2 (en) * 2001-04-12 2003-08-19 Ise Tex, Inc Image sensor with an enhanced near infra-red spectral response and method of making
WO2006018470A1 (en) * 2004-08-20 2006-02-23 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US7271468B2 (en) * 2005-02-16 2007-09-18 The Regents Of The University Of California High-voltage compatible, full-depleted CCD

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"CCD Soft-X-Ray Detectors With Improved High-and Low-Energy Performance", MW Bautz et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol 51, No 5, pages 2322-2327, 5/10/2004 *

Also Published As

Publication number Publication date
GB0823470D0 (en) 2009-01-28
WO2010072993A1 (en) 2010-07-01
GB2466502A (en) 2010-06-30

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