GB2460213B - Semiconductor device using memory cell array activation and erase information - Google Patents

Semiconductor device using memory cell array activation and erase information

Info

Publication number
GB2460213B
GB2460213B GB0917967A GB0917967A GB2460213B GB 2460213 B GB2460213 B GB 2460213B GB 0917967 A GB0917967 A GB 0917967A GB 0917967 A GB0917967 A GB 0917967A GB 2460213 B GB2460213 B GB 2460213B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
memory cell
cell array
erase information
array activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0917967A
Other versions
GB0917967D0 (en
GB2460213A (en
Inventor
Kazunari Kido
Kazuhiro Kurihara
Minoru Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion Japan Ltd
Spansion LLC
Original Assignee
Spansion Japan Ltd
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Japan Ltd, Spansion LLC filed Critical Spansion Japan Ltd
Priority to GB0917967A priority Critical patent/GB2460213B/en
Priority claimed from GB0622103A external-priority patent/GB2428121B/en
Publication of GB2460213A publication Critical patent/GB2460213A/en
Publication of GB0917967D0 publication Critical patent/GB0917967D0/en
Application granted granted Critical
Publication of GB2460213B publication Critical patent/GB2460213B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
GB0917967A 2004-05-12 2004-05-12 Semiconductor device using memory cell array activation and erase information Expired - Fee Related GB2460213B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0917967A GB2460213B (en) 2004-05-12 2004-05-12 Semiconductor device using memory cell array activation and erase information

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0622103A GB2428121B (en) 2004-05-12 2004-05-12 Semiconductor device and control method of the same
GB0817282A GB2451592B (en) 2004-05-12 2004-05-12 Erasing memory using sector based activation information
GB0917967A GB2460213B (en) 2004-05-12 2004-05-12 Semiconductor device using memory cell array activation and erase information

Publications (3)

Publication Number Publication Date
GB2460213A GB2460213A (en) 2009-11-25
GB0917967D0 GB0917967D0 (en) 2009-12-02
GB2460213B true GB2460213B (en) 2009-12-30

Family

ID=41263544

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0917967A Expired - Fee Related GB2460213B (en) 2004-05-12 2004-05-12 Semiconductor device using memory cell array activation and erase information
GB0817282A Expired - Fee Related GB2451592B (en) 2004-05-12 2004-05-12 Erasing memory using sector based activation information

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0817282A Expired - Fee Related GB2451592B (en) 2004-05-12 2004-05-12 Erasing memory using sector based activation information

Country Status (1)

Country Link
GB (2) GB2460213B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9036427B2 (en) * 2013-06-12 2015-05-19 Arm Limited Apparatus and a method for erasing data stored in a memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088281A (en) * 1997-10-21 2000-07-11 Kabushki Kaisha Toshiba Semiconductor memory device
US6215717B1 (en) * 1998-01-27 2001-04-10 Fujitsu Limited Semiconductor memory device for reducing a time needed for performing a protecting operation
EP1107121A2 (en) * 1999-12-10 2001-06-13 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory with programmable latches
GB2427949A (en) * 2004-05-11 2007-01-10 Spansion Llc Semiconductor device and control method for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088281A (en) * 1997-10-21 2000-07-11 Kabushki Kaisha Toshiba Semiconductor memory device
US6215717B1 (en) * 1998-01-27 2001-04-10 Fujitsu Limited Semiconductor memory device for reducing a time needed for performing a protecting operation
EP1107121A2 (en) * 1999-12-10 2001-06-13 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory with programmable latches
GB2427949A (en) * 2004-05-11 2007-01-10 Spansion Llc Semiconductor device and control method for semiconductor device

Also Published As

Publication number Publication date
GB0917967D0 (en) 2009-12-02
GB0817282D0 (en) 2008-10-29
GB2460213A (en) 2009-11-25
GB2451592A (en) 2009-02-04
GB2451592B (en) 2009-11-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20230512