GB2431044B - Variable mask device for crystallizing silicon layer and method for crystallizing using the same - Google Patents
Variable mask device for crystallizing silicon layer and method for crystallizing using the sameInfo
- Publication number
- GB2431044B GB2431044B GB0624768A GB0624768A GB2431044B GB 2431044 B GB2431044 B GB 2431044B GB 0624768 A GB0624768 A GB 0624768A GB 0624768 A GB0624768 A GB 0624768A GB 2431044 B GB2431044 B GB 2431044B
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystallizing
- same
- silicon layer
- mask device
- variable mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H01L21/2026—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040062892A KR100689315B1 (en) | 2004-08-10 | 2004-08-10 | Device for crystallizing silicon thin layer and method for crystallizing using the same |
GB0512742A GB2417130B (en) | 2004-08-10 | 2005-06-22 | Variable mask device for crystallizing silicon layer and method for crystalling using the same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0624768D0 GB0624768D0 (en) | 2007-01-17 |
GB2431044A GB2431044A (en) | 2007-04-11 |
GB2431044B true GB2431044B (en) | 2007-08-08 |
Family
ID=38268950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0624768A Expired - Fee Related GB2431044B (en) | 2004-08-10 | 2006-12-12 | Variable mask device for crystallizing silicon layer and method for crystallizing using the same |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2431044B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208769A (en) * | 1999-01-08 | 2000-07-28 | Sony Corp | Manufacture of thin-film semiconductor device and laser irradiation device |
US20030211714A1 (en) * | 2001-12-20 | 2003-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Irradiation method of laser beam |
US20030228723A1 (en) * | 2001-12-11 | 2003-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
-
2006
- 2006-12-12 GB GB0624768A patent/GB2431044B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208769A (en) * | 1999-01-08 | 2000-07-28 | Sony Corp | Manufacture of thin-film semiconductor device and laser irradiation device |
US20030228723A1 (en) * | 2001-12-11 | 2003-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
US20030211714A1 (en) * | 2001-12-20 | 2003-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Irradiation method of laser beam |
Also Published As
Publication number | Publication date |
---|---|
GB0624768D0 (en) | 2007-01-17 |
GB2431044A (en) | 2007-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2417130B (en) | Variable mask device for crystallizing silicon layer and method for crystalling using the same | |
TWI346995B (en) | Semiconductor device and method for producing the same | |
EP1710696A4 (en) | Semiconductor device and method for activating the same | |
IL183882A0 (en) | Substrate holding apparatus, exposure apparatus, and device fabricating method | |
IL181633A0 (en) | Substrate carrying device, substrate carrying method, and exposure device | |
EP1756949A4 (en) | Semiconductor device and method of forming the same | |
SG10201801998TA (en) | Substrate holding device, exposure apparatus, and device manufacturing method | |
TWI366271B (en) | Method of forming at least one thin film device | |
HK1164542A1 (en) | Substrate holding device, exposure apparatus having the same, device manufacturing method | |
SG119329A1 (en) | Semiconductor device and method for manufacturing the same | |
EP2075847A4 (en) | Silicon carbide semiconductor device and method for fabricating the same | |
GB2434675B (en) | Semiconductor device and semiconductor control method | |
EP1816671A4 (en) | Exposure method, device manufacturing method, and substrate | |
TWI368320B (en) | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device | |
SG119321A1 (en) | Wafer dividing method and apparatus | |
EP1840248A4 (en) | Semiconductor single crystal producing device and producing method | |
TWI349311B (en) | Method and apparatus for forming silicon nitride film | |
EP1966826A4 (en) | Semiconductor device and method for forming the same | |
TWI318433B (en) | Semiconductor device and fabrication method thereof | |
EP1732128A4 (en) | Substrate for semiconductor device and semiconductor device | |
GB2429315B (en) | Semiconductor device and its control method | |
EP1875294A4 (en) | Isolation layer for semiconductor devices and method for forming the same | |
EP1705699A4 (en) | Film forming device and film forming method | |
GB0411971D0 (en) | Semiconductor device and method for manufacture | |
EP1833093A4 (en) | Semiconductor device and method for manufacturing same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20210622 |