GB2431044B - Variable mask device for crystallizing silicon layer and method for crystallizing using the same - Google Patents

Variable mask device for crystallizing silicon layer and method for crystallizing using the same

Info

Publication number
GB2431044B
GB2431044B GB0624768A GB0624768A GB2431044B GB 2431044 B GB2431044 B GB 2431044B GB 0624768 A GB0624768 A GB 0624768A GB 0624768 A GB0624768 A GB 0624768A GB 2431044 B GB2431044 B GB 2431044B
Authority
GB
United Kingdom
Prior art keywords
crystallizing
same
silicon layer
mask device
variable mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0624768A
Other versions
GB2431044A (en
GB0624768D0 (en
Inventor
Jae-Sung You
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Philips LCD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040062892A external-priority patent/KR100689315B1/en
Application filed by LG Philips LCD Co Ltd filed Critical LG Philips LCD Co Ltd
Publication of GB0624768D0 publication Critical patent/GB0624768D0/en
Publication of GB2431044A publication Critical patent/GB2431044A/en
Application granted granted Critical
Publication of GB2431044B publication Critical patent/GB2431044B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022—Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • H01L21/2026—Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials using a coherent energy beam, e.g. laser or electron beam
GB0624768A 2004-08-10 2006-12-12 Variable mask device for crystallizing silicon layer and method for crystallizing using the same Expired - Fee Related GB2431044B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040062892A KR100689315B1 (en) 2004-08-10 2004-08-10 Device for crystallizing silicon thin layer and method for crystallizing using the same
GB0512742A GB2417130B (en) 2004-08-10 2005-06-22 Variable mask device for crystallizing silicon layer and method for crystalling using the same

Publications (3)

Publication Number Publication Date
GB0624768D0 GB0624768D0 (en) 2007-01-17
GB2431044A GB2431044A (en) 2007-04-11
GB2431044B true GB2431044B (en) 2007-08-08

Family

ID=38268950

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0624768A Expired - Fee Related GB2431044B (en) 2004-08-10 2006-12-12 Variable mask device for crystallizing silicon layer and method for crystallizing using the same

Country Status (1)

Country Link
GB (1) GB2431044B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208769A (en) * 1999-01-08 2000-07-28 Sony Corp Manufacture of thin-film semiconductor device and laser irradiation device
US20030211714A1 (en) * 2001-12-20 2003-11-13 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
US20030228723A1 (en) * 2001-12-11 2003-12-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing a semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208769A (en) * 1999-01-08 2000-07-28 Sony Corp Manufacture of thin-film semiconductor device and laser irradiation device
US20030228723A1 (en) * 2001-12-11 2003-12-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing a semiconductor device
US20030211714A1 (en) * 2001-12-20 2003-11-13 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam

Also Published As

Publication number Publication date
GB2431044A (en) 2007-04-11
GB0624768D0 (en) 2007-01-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20210622