GB2400490B - Methods of depositing piezoelectric films - Google Patents

Methods of depositing piezoelectric films

Info

Publication number
GB2400490B
GB2400490B GB0407506A GB0407506A GB2400490B GB 2400490 B GB2400490 B GB 2400490B GB 0407506 A GB0407506 A GB 0407506A GB 0407506 A GB0407506 A GB 0407506A GB 2400490 B GB2400490 B GB 2400490B
Authority
GB
United Kingdom
Prior art keywords
methods
piezoelectric films
depositing piezoelectric
depositing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0407506A
Other versions
GB0407506D0 (en
GB2400490A (en
Inventor
Paul Rich
Mark Ashley Ford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Original Assignee
Trikon Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Ltd filed Critical Trikon Technologies Ltd
Publication of GB0407506D0 publication Critical patent/GB0407506D0/en
Publication of GB2400490A publication Critical patent/GB2400490A/en
Application granted granted Critical
Publication of GB2400490B publication Critical patent/GB2400490B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0478—Resonance frequency in a process for mass production

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
GB0407506A 2003-04-10 2004-04-02 Methods of depositing piezoelectric films Expired - Lifetime GB2400490B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0308249.2A GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films

Publications (3)

Publication Number Publication Date
GB0407506D0 GB0407506D0 (en) 2004-05-05
GB2400490A GB2400490A (en) 2004-10-13
GB2400490B true GB2400490B (en) 2006-06-28

Family

ID=9956522

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0308249.2A Ceased GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films
GB0407506A Expired - Lifetime GB2400490B (en) 2003-04-10 2004-04-02 Methods of depositing piezoelectric films

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0308249.2A Ceased GB0308249D0 (en) 2003-04-10 2003-04-10 Method of depositing piezoelectric films

Country Status (3)

Country Link
JP (2) JP2004320759A (en)
DE (1) DE102004014718A1 (en)
GB (2) GB0308249D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543496B2 (en) * 2006-03-27 2009-06-09 Georgia Tech Research Corporation Capacitive bulk acoustic wave disk gyroscopes
WO2011026100A1 (en) 2009-08-31 2011-03-03 Georgia Tech Research Corporation Bulk acoustic wave gyroscope with spoked structure
CN104579233B (en) * 2013-10-23 2018-12-04 中兴通讯股份有限公司 A kind of production method and device of film Resonator

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
WO1998015984A1 (en) * 1996-10-10 1998-04-16 Nokia Mobile Phones Limited Method for tuning thin film fbars
US5864261A (en) * 1994-05-23 1999-01-26 Iowa State University Research Foundation Multiple layer acoustical structures for thin-film resonator based circuits and systems
EP1221770A1 (en) * 2001-01-05 2002-07-10 Nokia Corporation Baw filters having different center frequencies on a single substrate and a method for providing same
EP1253713A2 (en) * 2001-04-23 2002-10-30 Agilent Technologies, Inc. (a Delaware corporation) Controlled effective coupling coefficients for film bulk acoustic resonators
US20020166218A1 (en) * 2001-05-11 2002-11-14 Barber Bradley Paul Method for self alignment of patterned layers in thin film acoustic devices
US20030020365A1 (en) * 2001-07-26 2003-01-30 Matsushita Electric Industrial Co., Ltd. Piezoelectric thin film vibrator and method of adjusting its frequency
WO2004019426A1 (en) * 2002-08-21 2004-03-04 Matsushita Electric Industrial Co., Ltd. Method for manufacturing resonant device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1064886A (en) * 1996-08-20 1998-03-06 Sony Corp Device and method for dry etching
JPH10280153A (en) * 1997-04-11 1998-10-20 Toshiba Mach Co Ltd Plasma cvd device
US6342134B1 (en) * 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
US6329305B1 (en) * 2000-02-11 2001-12-11 Agere Systems Guardian Corp. Method for producing devices having piezoelectric films
JP2002031523A (en) * 2000-05-10 2002-01-31 Rigaku Corp Thin film measuring apparatus and method and thin film formation system
JP4575586B2 (en) * 2000-12-19 2010-11-04 キヤノンアネルバ株式会社 Deposition equipment
US6611576B1 (en) * 2001-02-12 2003-08-26 Advanced Micro Devices, Inc. Automated control of metal thickness during film deposition
US6456173B1 (en) * 2001-02-15 2002-09-24 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
JP2002350370A (en) * 2001-03-22 2002-12-04 Rigaku Corp X-ray measuring apparatus, system for measuring/forming thin film, and method for measuring/forming thin film
JP3954319B2 (en) * 2001-03-28 2007-08-08 株式会社東芝 Thin film thickness monitoring method and substrate temperature measurement method
US6480074B1 (en) * 2001-04-27 2002-11-12 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
US5864261A (en) * 1994-05-23 1999-01-26 Iowa State University Research Foundation Multiple layer acoustical structures for thin-film resonator based circuits and systems
WO1998015984A1 (en) * 1996-10-10 1998-04-16 Nokia Mobile Phones Limited Method for tuning thin film fbars
EP1221770A1 (en) * 2001-01-05 2002-07-10 Nokia Corporation Baw filters having different center frequencies on a single substrate and a method for providing same
EP1253713A2 (en) * 2001-04-23 2002-10-30 Agilent Technologies, Inc. (a Delaware corporation) Controlled effective coupling coefficients for film bulk acoustic resonators
US20020166218A1 (en) * 2001-05-11 2002-11-14 Barber Bradley Paul Method for self alignment of patterned layers in thin film acoustic devices
US20030020365A1 (en) * 2001-07-26 2003-01-30 Matsushita Electric Industrial Co., Ltd. Piezoelectric thin film vibrator and method of adjusting its frequency
WO2004019426A1 (en) * 2002-08-21 2004-03-04 Matsushita Electric Industrial Co., Ltd. Method for manufacturing resonant device

Also Published As

Publication number Publication date
GB0407506D0 (en) 2004-05-05
GB2400490A (en) 2004-10-13
JP2011061867A (en) 2011-03-24
GB0308249D0 (en) 2003-05-14
DE102004014718A1 (en) 2004-10-21
JP2004320759A (en) 2004-11-11

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20150716 AND 20150722

PE20 Patent expired after termination of 20 years

Expiry date: 20240401